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Yin Z, Tang H, Wang K, Zhang X, Sha X, Wang W, Xiao S, Song Q. Ultracompact and Uniform Nanoemitter Array Based on Periodic Scattering. NANO LETTERS 2024; 24:12612-12619. [PMID: 39331014 DOI: 10.1021/acs.nanolett.4c03690] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2024]
Abstract
As emerging gain materials, lead halide perovskites have drawn considerable attention in coherent light sources. With the development of patterning and integration techniques, a perovskite laser array has been realized by distributing perovskite microcrystals periodically. Nevertheless, the packing density is limited by the crystal size and the channel gap distance. More importantly, the lasing performance for individual laser units is quite random due to variation of size and crystal quality. Herein an ultracompact perovskite nanoemitter array with uniform emission has been demonstrated. Individual emitters are formed via scattering evanescent components from a shared Fabry-Perot laser, ensuring uniform lasing emission in a unit cell with a side length of 160 nm and lattice constant of 400 nm. And the periodic silicon scatterers do not deteriorate the lasing threshold dramatically. In addition, the surface emitting efficiency increased significantly. The direct integration of a densely packed nanoemitter array with a silicon platform promises high-throughput sensing and high-capacity optical interconnects.
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Affiliation(s)
- Zhen Yin
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Haijun Tang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Kaiyang Wang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Xudong Zhang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Xinbo Sha
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Wenchao Wang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
| | - Shumin Xiao
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, P. R. China
| | - Qinghai Song
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen 518055, P. R. China
- Pengcheng Laboratory, Shenzhen 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, P. R. China
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Tan Y, Yang L, Song H, Huang M, Huang J, Ali W, Li F, Li Z. Microstructure-Assisted Wafer-Scale Fabrication of Perovskite Microlaser Arrays. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2401596. [PMID: 38889398 DOI: 10.1002/smll.202401596] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Revised: 05/11/2024] [Indexed: 06/20/2024]
Abstract
All inorganic lead halide perovskites exhibit fascinating optical and optoelectronic characteristics for on-chip lasing, but the lack of precise control of wafer-scale fabrication for perovskite microstructure arrays restricts their potential applications in on-chip-integrated devices. In this work, a microstructure-template assisted crystallization method is demonstrated via a designed chemical vapor deposition process, achieving the controllable fabrication of homogeneous perovskite micro-hemispheroid (PeMH) arrays spanning the entire surface area of a 4-inch wafer. Benefiting from the low-loss whispering gallery resonance and plasmon-enhanced light-matter interactions in well-confined hybrid cavities, this CsPbX3/Ag (X = Cl, Br) plasmonic microlasers exhibit quite low thresholds below 10 µJ cm-2. Interestingly, these thresholds can be efficiently modulated through the manipulation of plasmonic resonance and electromagnetic field mode in PeMHs owning various diameters. This strategy not only provides a valuable methodology for the large-scale fabrication of perovskite microstructures but also endorses the potential of all-inorganic perovskite nanostructures as promising candidates for on-chip-integrated light sources.
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Affiliation(s)
- Yike Tan
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Liuli Yang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Hao Song
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Ming Huang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Jianhua Huang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Wajid Ali
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Fubin Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
| | - Ziwei Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, Hunan, 410082, China
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3
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Moon J, Mehta Y, Gundogdu K, So F, Gu Q. Metal-Halide Perovskite Lasers: Cavity Formation and Emission Characteristics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2211284. [PMID: 36841548 DOI: 10.1002/adma.202211284] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 02/08/2023] [Indexed: 06/18/2023]
Abstract
Hybrid metal-halide perovskites (MHPs) have shown remarkable optoelectronic properties as well as facile and cost-effective processability. With the success of MHP solar cells and light-emitting diodes, MHPs have also exhibited great potential as gain media for on-chip lasers. However, to date, stable operation of optically pumped MHP lasers and electrically driven MHP lasers-an essential requirement for MHP laser's insertion into chip-scale photonic integrated circuits-is not yet demonstrated. The main obstacles include the instability of MHPs in the atmosphere, rudimentary MHP laser cavity patterning methods, and insufficient understanding of emission mechanisms in MHP materials and cavities. This review aims to provide a detailed overview of different strategies to improve the intrinsic properties of MHPs in the atmosphere and to establish an optimal MHP cavity patterning method. In addition, this review discusses different emission mechanisms in MHP materials and cavities and how to distinguish them.
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Affiliation(s)
- Jiyoung Moon
- Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Yash Mehta
- Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
| | - Kenan Gundogdu
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
- Physics, North Carolina State University, Raleigh, NC, 27695, USA
| | - Franky So
- Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
| | - Qing Gu
- Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
- Physics, North Carolina State University, Raleigh, NC, 27695, USA
- Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695, USA
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4
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Lee YC, Ho YL, Lin BW, Chen MH, Xing D, Daiguji H, Delaunay JJ. High-Q lasing via all-dielectric Bloch-surface-wave platform. Nat Commun 2023; 14:6458. [PMID: 37833267 PMCID: PMC10576087 DOI: 10.1038/s41467-023-41471-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Accepted: 09/05/2023] [Indexed: 10/15/2023] Open
Abstract
Controlling the propagation and emission of light via Bloch surface waves (BSWs) has held promise in the field of on-chip nanophotonics. BSW-based optical devices are being widely investigated to develop on-chip integration systems. However, a coherent light source that is based on the stimulated emission of a BSW mode has yet to be developed. Here, we demonstrate lasers based on a guided BSW mode sustained by a gain-medium guiding structure microfabricated on the top of a BSW platform. A long-range propagation length of the BSW mode and a high-quality lasing emission of the BSW mode are achieved. The BSW lasers possess a lasing threshold of 6.7 μJ/mm2 and a very narrow linewidth reaching a full width at half maximum as small as 0.019 nm. Moreover, the proposed lasing scheme exhibits high sensitivity to environmental changes suggesting the applicability of the proposed BSW lasers in ultra-sensitive devices.
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Affiliation(s)
- Yang-Chun Lee
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Ya-Lun Ho
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Bo-Wei Lin
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Mu-Hsin Chen
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Di Xing
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Hirofumi Daiguji
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Jean-Jacques Delaunay
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
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5
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Zhang L, Mei L, Wang K, Lv Y, Zhang S, Lian Y, Liu X, Ma Z, Xiao G, Liu Q, Zhai S, Zhang S, Liu G, Yuan L, Guo B, Chen Z, Wei K, Liu A, Yue S, Niu G, Pan X, Sun J, Hua Y, Wu WQ, Di D, Zhao B, Tian J, Wang Z, Yang Y, Chu L, Yuan M, Zeng H, Yip HL, Yan K, Xu W, Zhu L, Zhang W, Xing G, Gao F, Ding L. Advances in the Application of Perovskite Materials. NANO-MICRO LETTERS 2023; 15:177. [PMID: 37428261 PMCID: PMC10333173 DOI: 10.1007/s40820-023-01140-3] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 05/29/2023] [Indexed: 07/11/2023]
Abstract
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
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Affiliation(s)
- Lixiu Zhang
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Luyao Mei
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China
| | - Kaiyang Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, 518055, People's Republic of China
| | - Yinhua Lv
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Shuai Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Yaxiao Lian
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Xiaoke Liu
- Department of Physics, Linköping University, 58183, Linköping, Sweden
| | - Zhiwei Ma
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Guanjun Xiao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Qiang Liu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China
| | - Shuaibo Zhai
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China
| | - Shengli Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Gengling Liu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Ligang Yuan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Bingbing Guo
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Ziming Chen
- Department of Chemistry, Imperial College London, London, W12 0BZ, UK
| | - Keyu Wei
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Aqiang Liu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Shizhong Yue
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Guangda Niu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Xiyan Pan
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Jie Sun
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yong Hua
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Wu-Qiang Wu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Dawei Di
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Baodan Zhao
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Zhijie Wang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Yang Yang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Liang Chu
- School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China
| | - Mingjian Yuan
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Haibo Zeng
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, People's Republic of China
| | - Keyou Yan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Wentao Xu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China.
| | - Lu Zhu
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China.
| | - Wenhua Zhang
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China.
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, People's Republic of China.
| | - Feng Gao
- Department of Physics, Linköping University, 58183, Linköping, Sweden.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
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Zhang L, Zhang J, Shang Q, Song J, Li C, Du W, Chen S, Liu X, Zou B, Gao P, Zhang Q. Ultrafast Antisolvent Growth of Single-Crystalline CsPbCl 3 Microcavity for Low-Threshold Room Temperature Blue Lasing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21356-21362. [PMID: 35471822 DOI: 10.1021/acsami.2c02811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
All-inorganic perovskite CsPbCl3 has recently attracted considerable attention due to its great potentials for the development of high-efficiency, deep-blue optoelectronic devices. Particularly, single-crystalline CsPbCl3 planar microstructures provide good platforms for both fundamental studies and nanophotonics applications from lasers and detectors to amplifiers. In this study, we report an ultrafast antisolvent deposition route to fabricate single-crystalline CsPbCl3 microplatelets (MPs). The as-grown MPs exhibit uniform morphology, strong emission, and outstanding gain property. Room temperature photoluminescence lasing is realized at 428 nm with a low threshold of 11.5 μJ cm-2 and high net optical gain up to 720 cm-1. These findings advance fundamental understanding on the fabrication and optoelectronic applications of low-dimensional CsPbCl3 perovskite structures.
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Affiliation(s)
- Li Zhang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jinshuai Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Qiuyu Shang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jiepeng Song
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Chun Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center of Excellence for Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Shulin Chen
- Electron Microscopy Laboratory School of Physics, Peking University, Beijing 100871, P. R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center of Excellence for Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Bingsuo Zou
- Guangxi Key Lab of Processing for Nonferrous Metals and Featured Materials and School of Resources, Environments and Materials, Guangxi University, Nanning 530004, P. R. China
| | - Peng Gao
- Electron Microscopy Laboratory School of Physics, Peking University, Beijing 100871, P. R. China
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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7
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Zhang H, Li Y, Tan S, Chen Z, Song K, Huang S, Shi J, Luo Y, Li D, Meng Q. High-efficiency (>20%) planar carbon-based perovskite solar cells through device configuration engineering. J Colloid Interface Sci 2022; 608:3151-3158. [PMID: 34839923 DOI: 10.1016/j.jcis.2021.11.050] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/09/2021] [Accepted: 11/10/2021] [Indexed: 11/18/2022]
Abstract
Carbon-based perovskite solar cells (C-PSCs) have attracted widespread research interest because of their excellent stability. However, the power conversion efficiency (PCE) of C-PSCs, especially planar C-PSCs, lags far behind the certified efficiency (25.5%) of metal-based PSCs. The simple architecture of planar C-PSCs imparts stringent requirements for device configuration. In this study, we fabricated high-performance planar C-PSCs through device configuration engineering in terms of the perovskite active layer and carbon electrode. Through the combination of component and additive engineering, the crystallization and absorption profiles of perovskite active layer have been improved, which afforded sufficient photogenerated carriers and decreased nonradiative recombination. Furthermore, the mechanical and physical properties of carbon electrode were evaluated comprehensively to regulate the back-interface contact. Based on the compromise of the flexibility and conductivity of carbon film, an excellent back-interface contact has been formed, which promoted fast interface charge transfer, thereby decreasing interface recombination and improving carrier collection efficiency. Finally, the as-prepared devices achieved a remarkable PCE of up to 20.04%, which is a record-high value for planar C-PSCs. Furthermore, the as-prepared devices exhibited excellent long-term stability. After storage for 1000 h at room temperature and 25% relative humidity without encapsulation, the as-prepared device retained 94% of its initial performance.
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Affiliation(s)
- Huiyin Zhang
- School of Instrument Science and Opto Electronic Engineering, Beijing Information Science & Technology University, Beijing 100192, PR China.
| | - Yiming Li
- Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Shan Tan
- Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Zijing Chen
- Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Keke Song
- School of Instrument Science and Opto Electronic Engineering, Beijing Information Science & Technology University, Beijing 100192, PR China
| | - Shixian Huang
- School of Instrument Science and Opto Electronic Engineering, Beijing Information Science & Technology University, Beijing 100192, PR China
| | - Jiangjian Shi
- Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yanhong Luo
- Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Dongmei Li
- Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Qingbo Meng
- Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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8
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Ai B, Fan Z, Wong ZJ. Plasmonic-perovskite solar cells, light emitters, and sensors. MICROSYSTEMS & NANOENGINEERING 2022; 8:5. [PMID: 35070349 PMCID: PMC8752666 DOI: 10.1038/s41378-021-00334-2] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 10/06/2021] [Accepted: 10/28/2021] [Indexed: 06/14/2023]
Abstract
The field of plasmonics explores the interaction between light and metallic micro/nanostructures and films. The collective oscillation of free electrons on metallic surfaces enables subwavelength optical confinement and enhanced light-matter interactions. In optoelectronics, perovskite materials are particularly attractive due to their excellent absorption, emission, and carrier transport properties, which lead to the improved performance of solar cells, light-emitting diodes (LEDs), lasers, photodetectors, and sensors. When perovskite materials are coupled with plasmonic structures, the device performance significantly improves owing to strong near-field and far-field optical enhancements, as well as the plasmoelectric effect. Here, we review recent theoretical and experimental works on plasmonic perovskite solar cells, light emitters, and sensors. The underlying physical mechanisms, design routes, device performances, and optimization strategies are summarized. This review also lays out challenges and future directions for the plasmonic perovskite research field toward next-generation optoelectronic technologies.
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Affiliation(s)
- Bin Ai
- Department of Aerospace Engineering, Texas A&M University, College Station, TX 77843 USA
- School of Microelectronics and Communication Engineering, Chongqing University, 400044 Chongqing, P.R. China
- Chongqing Key Laboratory of Bioperception & Intelligent Information Processing, 400044 Chongqing, P.R. China
| | - Ziwei Fan
- Department of Aerospace Engineering, Texas A&M University, College Station, TX 77843 USA
| | - Zi Jing Wong
- Department of Aerospace Engineering, Texas A&M University, College Station, TX 77843 USA
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843 USA
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9
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Zhizhchenko AY, Cherepakhin AB, Masharin MA, Pushkarev AP, Kulinich SA, Kuchmizhak AA, Makarov SV. Directional Lasing from Nanopatterned Halide Perovskite Nanowire. NANO LETTERS 2021; 21:10019-10025. [PMID: 34802241 DOI: 10.1021/acs.nanolett.1c03656] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Halide perovskite nanowire-based lasers have become a powerful tool for modern nanophotonics, being deeply subwavelength in cross-section and demonstrating low-threshold lasing within the whole visible spectral range owing to the huge gain of material even at room temperature. However, their emission directivity remains poorly controlled because of the efficient outcoupling of radiation through their subwavelength facets working as pointlike light sources. Here, we achieve directional lasing from a single perovskite CsPbBr3 nanowire by imprinting a nanograting on its surface, which provides stimulated emission outcoupling to its vertical direction with a divergence angle around 2°. The nanopatterning is carried out by the high-throughput laser ablation method, which preserves the luminescent properties of the material that is typically deteriorated after processing via conventional lithographic approaches. Moreover, nanopatterning of the perovskite nanowire is found to decrease the number of the lasing modes with a 2-fold increase of the quality factor of the remaining modes.
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Affiliation(s)
- Alexey Yu Zhizhchenko
- Far Eastern Federal University, Vladivostok 690091, Russia
- Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Science, Vladivostok 690041, Russia
| | - Artem B Cherepakhin
- Far Eastern Federal University, Vladivostok 690091, Russia
- Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Science, Vladivostok 690041, Russia
| | | | | | - Sergei A Kulinich
- Far Eastern Federal University, Vladivostok 690091, Russia
- Research Institute of Science and Technology, Tokai University, Hiratsuka, Kanagawa 259-1292, Japan
| | - Aleksandr A Kuchmizhak
- Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Science, Vladivostok 690041, Russia
- Pacific Quantum Center, Far Eastern Federal University, Russky Island, Vladivostok 690922, Russia
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10
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Cho S, Yang Y, Soljačić M, Yun SH. Submicrometer perovskite plasmonic lasers at room temperature. SCIENCE ADVANCES 2021; 7:eabf3362. [PMID: 34433555 PMCID: PMC8386933 DOI: 10.1126/sciadv.abf3362] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2020] [Accepted: 07/06/2021] [Indexed: 05/26/2023]
Abstract
Plasmonic lasers attracted interest for their ability to generate coherent light in mode volume smaller than the diffraction limit of photonic lasers. While nanoscale devices in one or two dimensions were demonstrated, it has been difficult to achieve plasmonic lasing with submicrometer cavities in all three dimensions. Here, we demonstrate submicrometer-sized, plasmonic lasers using cesium-lead-bromide perovskite (CsPbBr3) crystals, as small as 0.58 μm by 0.56 μm by 0.32 μm (cuboid) and 0.79 μm by 0.66 μm by 0.18 μm (plate), on polymer-coated gold substrates at room temperature. Our experimental and simulation data obtained from more than 100 plasmonic and photonic devices showed that enhanced optical gain by the Purcell effect, large spontaneous emission factor, and high group index are key elements to efficient plasmonic lasing. The results shed light on the three-dimensional miniaturization of plasmonic lasers.
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Affiliation(s)
- Sangyeon Cho
- Wellman Center for Photomedicine, Massachusetts General Hospital and Harvard Medical School, 65 Landsdowne St., Cambridge, MA 02139, USA
- Harvard-MIT Health Sciences and Technology, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA
| | - Yi Yang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA
| | - Marin Soljačić
- Research Laboratory of Electronics, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA
| | - Seok Hyun Yun
- Wellman Center for Photomedicine, Massachusetts General Hospital and Harvard Medical School, 65 Landsdowne St., Cambridge, MA 02139, USA.
- Harvard-MIT Health Sciences and Technology, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA
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11
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Chen J, Zhou Y, Fu Y, Pan J, Mohammed OF, Bakr OM. Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics. Chem Rev 2021; 121:12112-12180. [PMID: 34251192 DOI: 10.1021/acs.chemrev.1c00181] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.
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Affiliation(s)
- Jie Chen
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.,School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yang Zhou
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yongping Fu
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Jun Pan
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, People's Republic of China
| | - Omar F Mohammed
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Osman M Bakr
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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12
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Li Y, Yuan Y, Peng X, Zhou F, Song J, Qu J. Low Threshold and Long‐Range Propagation Plasmonic Nanolaser Enhanced by Black Phosphorus Nanosheets. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202100087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Yongping Li
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems Shenzhen University Shenzhen 518060 P. R. China
| | - Yufeng Yuan
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems Shenzhen University Shenzhen 518060 P. R. China
| | - Xiao Peng
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems Shenzhen University Shenzhen 518060 P. R. China
| | - Feifan Zhou
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems Shenzhen University Shenzhen 518060 P. R. China
| | - Jun Song
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems Shenzhen University Shenzhen 518060 P. R. China
| | - Junle Qu
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems Shenzhen University Shenzhen 518060 P. R. China
- Moscow Engineering Physics Institute National Research Nuclear University Moscow 115409 Russian Federation
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13
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Tian X, Wang L, Li W, Lin Q, Cao Q. Whispering Gallery Mode Lasing from Perovskite Polygonal Microcavities via Femtosecond Laser Direct Writing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:16952-16958. [PMID: 33792289 DOI: 10.1021/acsami.0c21824] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic-inorganic halide perovskites have excellent intrinsic properties, such as long carrier lifetime, high photoluminescence quantum yield, and high gain, in whispering gallery mode (WGM) cavities by facile vapor self-assembly or solution process, which make them competitive for high-performance microlasers. However, the performance of perovskite-based microlasers is severely limited by the fabrication of microcavities, which results in poor reproducibility and uncontrolled morphology. Herein, we explore a reproducible method which combined thermal co-evaporation with femtosecond (fs) laser direct writing for formamidinium lead iodide (FAPbI3) perovskite polygon-shaped WGM microcavities. The microlasers pumped with the fs laser had a low threshold of 4.0-12.3 μJ/cm2 and narrow full width at half-maximum of 0.62-1.05 nm. Moreover, size- and shape-dependent WGM lasing performances are also investigated systematically. The results prove that FAPbI3 polygonal microcavities can serve as promising WGM lasers and have great potential for practical optoelectronic applications.
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Affiliation(s)
- Xiaoyu Tian
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Lin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, China
| | - Wei Li
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Qianqian Lin
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Qiang Cao
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
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14
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Kim Y, Park BJ, Kim M, Jin YH, Park NR, Kim MK. Light Engineering in Nanometer Space. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003051. [PMID: 33043504 DOI: 10.1002/adma.202003051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2020] [Revised: 07/12/2020] [Indexed: 06/11/2023]
Abstract
Significant advances have been made in photonic integrated circuit technology, similar to the development of electronic integrated circuits. However, the miniaturization of cavity resonators, which are the essential components of photonic circuits, still requires considerable improvement. Over the past decades, various optical cavities have been utilized to implement next-generation light sources in photonic circuits with low energy, high data traffic, and integrable physical sizes. Nevertheless, it has been difficult to reduce the size of most commercialized cavities beyond the diffraction limit while maintaining high performance. Herein, recent advancements in subwavelength metallic cavities that can improve performance, even with the use of lossy plasmonic modes, are reviewed. The discussion is divided in three parts according to light engineering methods: subwavelength metal-clad cavities engineered using intermediate dielectric cladding; implementation of plasmonic cavities and waveguides using plasmonic crystals; and development of deep-subwavelength plasmonic waveguides and cavities using geometric engineering. A direction for further developments in photonic integrated circuit technology is also discussed, along with its practical application.
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Affiliation(s)
- Yushin Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
- Department of Radiology, Stanford University, Stanford, CA, 94305, USA
| | - Byoung Jun Park
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Moohyuk Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Young-Ho Jin
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Nu-Ri Park
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Myung-Ki Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
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15
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Zhong Y, Liao K, Du W, Zhu J, Shang Q, Zhou F, Wu X, Sui X, Shi J, Yue S, Wang Q, Zhang Y, Zhang Q, Hu X, Liu X. Large-Scale Thin CsPbBr 3 Single-Crystal Film Grown on Sapphire via Chemical Vapor Deposition: Toward Laser Array Application. ACS NANO 2020; 14:15605-15615. [PMID: 33169976 DOI: 10.1021/acsnano.0c06380] [Citation(s) in RCA: 50] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Single-crystal perovskites with excellent photophysical properties are considered to be ideal materials for optoelectronic devices, such as lasers, light-emitting diodes and photodetectors. However, the growth of large-scale perovskite single-crystal films (SCFs) with high optical gain by vapor-phase epitaxy remains challenging. Herein, we demonstrated a facile method to fabricate large-scale thin CsPbBr3 SCFs (∼300 nm) on the c-plane sapphire substrate. High temperature is found to be the key parameter to control low reactant concentration and sufficient surface diffusion length for the growth of continuous CsPbBr3 SCFs. Through the comprehensive study of the carrier dynamics, we clarify that the trapped-related exciton recombination has the main effect under low carrier density, while the recombination of excitons and free carriers coexist until free carriers plays the dominate role with increasing carrier density. Furthermore, an extremely low-threshold (∼8 μJ cm-2) amplified spontaneous emission was achieved at room temperature due to the high optical gain up to 1255 cm-1 at a pump power of 20 times threshold (∼20 Pth). A microdisk array was prepared using a focused ion beam etching method, and a single-mode laser was achieved on a 3 μm diameter disk with the threshold of 1.6 μJ cm-2. Our experimental results not only present a versatile method to fabricate large-scale SCFs of CsPbBr3 but also supply an arena to boost the optoelectronic applications of CsPbBr3 with high performance.
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Affiliation(s)
- Yangguang Zhong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Kun Liao
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Collaborative Innovation Center of Quantum Matter Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, P.R. China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Jiangrui Zhu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Qiuyu Shang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Fan Zhou
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Xinyu Sui
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Qi Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaoyong Hu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Collaborative Innovation Center of Quantum Matter Nano-optoelectronics Frontier Center of Ministry of Education, Peking University, Beijing 100871, P.R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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16
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Liang Y, Li C, Huang YZ, Zhang Q. Plasmonic Nanolasers in On-Chip Light Sources: Prospects and Challenges. ACS NANO 2020; 14:14375-14390. [PMID: 33119269 DOI: 10.1021/acsnano.0c07011] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The plasmonic nanolaser is a class of lasers with the physical dimensions free from the optical diffraction limit. In the past decade, progress in performance, applications, and mechanisms of plasmonic nanolasers has increased dramatically. We review this advance and offer our prospectives on the remaining challenges ahead, concentrating on the integration with nanochips. In particular, we focus on the qualifications for electrical pumping, energy consumption, and ultrafast modulation. At last, we evaluate the strategies for on-chip source construction design and further threshold reduction to achieve a long-term room-temperature electrically pumped plasmonic nanolaser, the ultimate goal toward practical applications.
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Affiliation(s)
- Yin Liang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Chun Li
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Yong-Zhen Huang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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17
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Zhang A, Lv Q. Organic‐Inorganic Hybrid Perovskite Nanomaterials: Synthesis and Application. ChemistrySelect 2020. [DOI: 10.1002/slct.202003659] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Affiliation(s)
- Anni Zhang
- School of Science Beijing Jiaotong University Beijing 100044 China
| | - Qianrui Lv
- School of Science Beijing Jiaotong University Beijing 100044 China
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18
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Sun W, Liu Y, Qu G, Fan Y, Dai W, Wang Y, Song Q, Han J, Xiao S. Lead halide perovskite vortex microlasers. Nat Commun 2020; 11:4862. [PMID: 32978397 PMCID: PMC7519163 DOI: 10.1038/s41467-020-18669-1] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2020] [Accepted: 09/01/2020] [Indexed: 11/09/2022] Open
Abstract
Lead halide perovskite microlasers have been very promising for versatile optoelectronic applications. However, most perovskite microlasers are linearly polarized with uniform wavefront. The structured laser beams carrying orbital angular momentum have rarely been studied and the applications of perovskites in next-generation optical communications are thus hindered. Herein, we experimentally demonstrate the perovskite vortex microlasers with highly directional outputs and well−controlled topological charges. High quality gratings have been experimentally fabricated in perovskite film and the subsequent vertical cavity surface emitting lasers (VCSELs) with divergent angles of 3o are achieved. With the control of Archimedean spiral gratings, the wavefront of the perovskite VCSELs has been switched to be helical with topological charges of q = −4 to 4. This research is able to expand the potential applications of perovskite microlasers in hybrid integrated photonic networks, as well as optical computing. Integration of III-V semiconductor microlasers into modern Si or Si3N4 based photonic integrated circuits remains a challenge. Here, the authors demonstrate a perovskite vortex microlaser with highly directional outputs and well-controlled topological charges that is highly compatible with most materials.
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Affiliation(s)
- Wenzhao Sun
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P.R. China
| | - Yilin Liu
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P.R. China
| | - Geyang Qu
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P.R. China
| | - Yubin Fan
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P.R. China
| | - Wei Dai
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P.R. China
| | - Yuhan Wang
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P.R. China
| | - Qinghai Song
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P.R. China.,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, Shanxi, P.R. China
| | - Jiecai Han
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P.R. China
| | - Shumin Xiao
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P.R. China. .,Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, Shanxi, P.R. China. .,National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P.R. China.
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19
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Hsieh YH, Hsu BW, Peng KN, Lee KW, Chu CW, Chang SW, Lin HW, Yen TJ, Lu YJ. Perovskite Quantum Dot Lasing in a Gap-Plasmon Nanocavity with Ultralow Threshold. ACS NANO 2020; 14:11670-11676. [PMID: 32701270 DOI: 10.1021/acsnano.0c04224] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Lead halide perovskite materials have recently received considerable attention for achieving an economic and tunable laser owing to their solution-processable feature and promising optical properties. However, most reported perovskite-based lasers operate with a large lasing-mode volume, resulting in a high lasing threshold due to the inefficient coupling between the optical gain medium and cavity. Here, we demonstrate a continuous-wave nanolasing from a single lead halide perovskite (CsPbBr3) quantum dot (PQD) in a plasmonic gap-mode nanocavity with an ultralow threshold of 1.9 Wcm-2 under 120 K. The calculated ultrasmall mode volume (∼0.002 λ3) with a z-polarized dipole and the significantly large Purcell enhancement at the corner of the nanocavity inside the gap dramatically enhance the light-matter interaction in the nanocavity, thus facilitating lasing. The demonstration of PQD nanolasing with an ultralow-threshold provides an approach for realizing on-chip electrically driven lasing and integration into on-chip plasmonic circuitry for ultrafast optical communication and quantum information processing.
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Affiliation(s)
- Yu-Hung Hsieh
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Bo-Wei Hsu
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kang-Ning Peng
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Kuan-Wei Lee
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Chih Wei Chu
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shu-Wei Chang
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Hao-Wu Lin
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Ta-Jen Yen
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Jung Lu
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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20
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Azzam SI, Kildishev AV, Ma RM, Ning CZ, Oulton R, Shalaev VM, Stockman MI, Xu JL, Zhang X. Ten years of spasers and plasmonic nanolasers. LIGHT, SCIENCE & APPLICATIONS 2020; 9:90. [PMID: 32509297 PMCID: PMC7248101 DOI: 10.1038/s41377-020-0319-7] [Citation(s) in RCA: 65] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2020] [Revised: 04/15/2020] [Accepted: 04/17/2020] [Indexed: 05/25/2023]
Abstract
Ten years ago, three teams experimentally demonstrated the first spasers, or plasmonic nanolasers, after the spaser concept was first proposed theoretically in 2003. An overview of the significant progress achieved over the last 10 years is presented here, together with the original context of and motivations for this research. After a general introduction, we first summarize the fundamental properties of spasers and discuss the major motivations that led to the first demonstrations of spasers and nanolasers. This is followed by an overview of crucial technological progress, including lasing threshold reduction, dynamic modulation, room-temperature operation, electrical injection, the control and improvement of spasers, the array operation of spasers, and selected applications of single-particle spasers. Research prospects are presented in relation to several directions of development, including further miniaturization, the relationship with Bose-Einstein condensation, novel spaser-based interconnects, and other features of spasers and plasmonic lasers that have yet to be realized or challenges that are still to be overcome.
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Affiliation(s)
- Shaimaa I. Azzam
- School of Electrical & Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47907 USA
| | - Alexander V. Kildishev
- School of Electrical & Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47907 USA
| | - Ren-Min Ma
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China
- Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Cun-Zheng Ning
- Department of Electronic Engineering and International Center for Nano-Optoelectronics, Tsinghua University, 100084 Beijing, China
- School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA
| | - Rupert Oulton
- The Blackett Laboratory, Imperial College London, South Kensington, London, SW7 2AZ UK
| | - Vladimir M. Shalaev
- School of Electrical & Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 USA
- Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47907 USA
| | - Mark I. Stockman
- Center for Nano-Optics (CeNO) and Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303 USA
| | - Jia-Lu Xu
- Department of Electronic Engineering and International Center for Nano-Optoelectronics, Tsinghua University, 100084 Beijing, China
| | - Xiang Zhang
- Nanoscale Science and Engineering Center, University of California, Berkeley, Berkeley, CA 94720 USA
- Faculties of Sciences and Engineering, University of Hong Kong, Hong Kong, China
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21
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Zhizhchenko AY, Tonkaev P, Gets D, Larin A, Zuev D, Starikov S, Pustovalov EV, Zakharenko AM, Kulinich SA, Juodkazis S, Kuchmizhak AA, Makarov SV. Light-Emitting Nanophotonic Designs Enabled by Ultrafast Laser Processing of Halide Perovskites. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2000410. [PMID: 32309903 DOI: 10.1002/smll.202000410] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2020] [Revised: 03/16/2020] [Accepted: 03/17/2020] [Indexed: 06/11/2023]
Abstract
Nanophotonics based on resonant nanostructures and metasurfaces made of halide perovskites have become a prospective direction for efficient light manipulation at the subwavelength scale in advanced photonic designs. One of the main challenges in this field is the lack of large-scale low-cost technique for subwavelength perovskite structures fabrication preserving highly efficient luminescence. Here, unique properties of halide perovskites addressed to their extremely low thermal conductivity (lower than that of silica glass) and high defect tolerance to apply projection femtosecond laser lithography for nanofabrication with precise spatial control in all three dimensions preserving the material luminescence efficiency are employed. Namely, with CH3 NH3 PbI3 perovskite highly ordered nanoholes and nanostripes of width as small as 250 nm, metasurfaces with periods less than 400 nm, and nanowire lasers as thin as 500 nm, corresponding to the state-of-the-art in multistage expensive lithographical methods are created. Remarkable performance of the developed approach allows to demonstrate a number of advanced optical applications, including morphology-controlled photoluminescence yield, structural coloring, optical- information encryption, and lasing.
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Affiliation(s)
- Alexey Y Zhizhchenko
- Institute of Automation and Control Processes (IACP), Far Eastern Branch of Russian Academy of Sciences, Vladivostok, 690091, Russia
| | | | - Dmitry Gets
- ITMO University, St. Petersburg, 197101, Russia
| | - Artem Larin
- ITMO University, St. Petersburg, 197101, Russia
| | - Dmitry Zuev
- ITMO University, St. Petersburg, 197101, Russia
| | - Sergey Starikov
- Ruhr-Universität Bochum, Bochum, 44701, Germany
- Joint Institute for High Temperatures of RAS, Moscow, 125412, Russia
| | | | | | - Sergei A Kulinich
- Far Eastern Federal University, Vladivostok, 690041, Russia
- Research Institute of Science and Technology, Tokai University, Hiratsuka, Kanagawa, 259-1292, Japan
| | | | - Aleksandr A Kuchmizhak
- Institute of Automation and Control Processes (IACP), Far Eastern Branch of Russian Academy of Sciences, Vladivostok, 690091, Russia
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22
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Cheng PJ, Zheng QY, Hsu CY, Li H, Hong KB, Zhu Y, Cui Q, Xu C, Lu TC, Lin TR. Full-Spectrum Analysis of Perovskite-Based Surface Plasmon Nanolasers. NANOSCALE RESEARCH LETTERS 2020; 15:66. [PMID: 32227260 PMCID: PMC7103583 DOI: 10.1186/s11671-020-3290-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2019] [Accepted: 02/27/2020] [Indexed: 06/10/2023]
Abstract
We systematically studied the characteristics of hybrid perovskite-based surface plasmon nanolasers. If one changes the anion composition of perovskites, the emission wavelength can be easily tuned. We conducted in full-spectrum modeling that featured hybrid perovskite nanowires placed on different SiO2-coated metallic (Au, Ag, and Al) plates. The proposed nanocavities that supported plasmonic gap modes exhibited distinguished properties of nanolasers, such as low-transparency threshold-gain and low lasing threshold. The corresponding experimental results for the MAPbBr3 nanolaser on Ag revealed the low-threshold operation. These superior features were attributed to enhanced light-matter interaction with strong coupling. Therefore, the proposed scheme, integrated with hybrid perovskite as gain material, provides an excellent platform for nanoscale plasmon lasing in the visible to near-infrared spectra.
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Affiliation(s)
- Pi-Ju Cheng
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Qi-Yan Zheng
- Department of Mechanical and Mechatronic Engineering, National Taiwan Ocean University, Keelung, 20224, Taiwan
| | - Chu-Yuan Hsu
- Department of Photonics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Heng Li
- Department of Photonics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Kuo-Bin Hong
- Department of Photonics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yizhi Zhu
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing, 210096, China
| | - Qiannan Cui
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing, 210096, China
| | - Chunxiang Xu
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing, 210096, China
| | - Tien-Chang Lu
- Department of Photonics, National Chiao Tung University, Hsinchu, 30010, Taiwan.
| | - Tzy-Rong Lin
- Department of Mechanical and Mechatronic Engineering, National Taiwan Ocean University, Keelung, 20224, Taiwan.
- Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, 20224, Taiwan.
- Center of Excellence for Ocean Engineering, National Taiwan Ocean University, Keelung, 20224, Taiwan.
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23
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Dong H, Zhang C, Liu X, Yao J, Zhao YS. Materials chemistry and engineering in metal halide perovskite lasers. Chem Soc Rev 2020; 49:951-982. [PMID: 31960011 DOI: 10.1039/c9cs00598f] [Citation(s) in RCA: 127] [Impact Index Per Article: 31.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
The invention and development of the laser have revolutionized science, technology, and industry. Metal halide perovskites are an emerging class of semiconductors holding promising potential in further advancing the laser technology. In this Review, we provide a comprehensive overview of metal halide perovskite lasers from the viewpoint of materials chemistry and engineering. After an introduction to the materials chemistry and physics of metal halide perovskites, we present diverse optical cavities for perovskite lasers. We then comprehensively discuss various perovskite lasers with particular functionalities, including tunable lasers, multicolor lasers, continuous-wave lasers, single-mode lasers, subwavelength lasers, random lasers, polariton lasers, and laser arrays. Following this a description of the strategies for improving the stability and reducing the toxicity of metal halide perovskite lasers is provided. Finally, future research directions and challenges toward practical technology applications of perovskite lasers are provided to give an outlook on this emerging field.
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Affiliation(s)
- Haiyun Dong
- Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
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24
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Resonance-enhanced three-photon luminesce via lead halide perovskite metasurfaces for optical encoding. Nat Commun 2019; 10:2085. [PMID: 31064986 PMCID: PMC6504863 DOI: 10.1038/s41467-019-10090-7] [Citation(s) in RCA: 42] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2019] [Accepted: 04/18/2019] [Indexed: 11/17/2022] Open
Abstract
Lead halide perovskites have emerged as promising materials for photovoltaic and optoelectronic devices. However, their exceptional nonlinear properties have not been fully exploited in nanophotonics yet. Herein we fabricate methyl ammonium lead tri-bromide perovskite metasurfaces and explore their internal nonlinear processes. While both of third-order harmonic generation and three-photon luminescence are generated, the latter one is less affected by the material loss and has been significantly enhanced by a factor of 60. The corresponding simulation reveals that the improvement is caused by the resonant enhancement of incident laser. Interestingly, such kind of resonance-enhanced three-photon luminescence holds true for metasurfaces with a small period number of 4, enabling promising applications of perovskite metasurface in high-resolution nonlinear color nanoprinting and optical encoding. The encoded information ‘NANO’ is visible only when the incident laser is on-resonance. The off-resonance pumping and the single-photon excitation just produce a uniform dark or photoluminescence background. Lead halide perovskites attract high interest as semiconductor materials but their exceptional nonlinear properties have not been fully exploited. Here Fan et al. demonstrate third-order harmonic generation and 60-fold enhanced three-photon luminescence, enabling optical encoding applications.
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25
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Liao YJ, Cheng CW, Wu BH, Wang CY, Chen CY, Gwo S, Chen LJ. Low threshold room-temperature UV surface plasmon polariton lasers with ZnO nanowires on single-crystal aluminum films with Al 2O 3 interlayers. RSC Adv 2019; 9:13600-13607. [PMID: 35519571 PMCID: PMC9063947 DOI: 10.1039/c9ra01484e] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2019] [Accepted: 04/18/2019] [Indexed: 01/03/2023] Open
Abstract
ZnO is one of the most promising optical gain media and allows lasing in ZnO nanowires at room temperature. Plasmonic lasers are potentially useful in applications in biosensing, photonic circuits, and high-capacity signal processing. In this work, we combine ZnO nanowires and single-crystalline aluminum films to fabricate Fabry–Perot type surface plasmon polariton (SPP) lasers to overcome the diffraction limit of conventional optics. High quality ZnO nanowires were synthesized by a vapor phase transport process via catalyzed growth. The ZnO nanowires were placed on a single-crystalline Al film grown by molecular beam epitaxy with an interlayer Al2O3 deposited by atomic layer deposition. The plasmonic laser is of metal-oxide-semiconductor (MOS) structure, compatible with silicon device processing. An optimal thickness of atomic layer deposited Al2O3 layer can lead to a low lasing threshold, 6.27 MW cm−2, which is 3 times and 12 times lower than that of previous reports for ZnO/Al and Zno/Al2O3/Al plasmonic lasers, respectively, owing to low materials loss. Both the thickness and quality of insulating layers were found to critically influence the lasing threshold of the SPP nanolasers in the subwavelength regime. The simulation results also manifest the importance of the quality of the dielectric interlayer. Ultralow threshold room-temperature UV surface plasmon polariton lasers using ZnO nanowires on single-crystal aluminum films with Al2O3 interlayers.![]()
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Affiliation(s)
- Yun-Jhen Liao
- Department of Materials Science and Engineering, National Tsing Hua University Hsinchu Taiwan .,Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University Hsinchu Taiwan
| | - Chang-Wei Cheng
- Department of Physics, National Tsing Hua University Hsinchu Taiwan
| | - Bao-Hsian Wu
- Department of Materials Science and Engineering, National Tsing Hua University Hsinchu Taiwan .,Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University Hsinchu Taiwan
| | - Chun-Yuan Wang
- Department of Physics, National Tsing Hua University Hsinchu Taiwan
| | - Chih-Yen Chen
- Department of Materials and Optoelectronic Science, National Sun Yat-Sen University Kaohsiung Taiwan
| | - Shangjr Gwo
- Department of Physics, National Tsing Hua University Hsinchu Taiwan
| | - Lih-Juann Chen
- Department of Materials Science and Engineering, National Tsing Hua University Hsinchu Taiwan .,Frontier Research Center on Fundamental and Applied Sciences of Matters, National Tsing Hua University Hsinchu Taiwan
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26
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Zhizhchenko A, Syubaev S, Berestennikov A, Yulin AV, Porfirev A, Pushkarev A, Shishkin I, Golokhvast K, Bogdanov AA, Zakhidov AA, Kuchmizhak AA, Kivshar YS, Makarov SV. Single-Mode Lasing from Imprinted Halide-Perovskite Microdisks. ACS NANO 2019; 13:4140-4147. [PMID: 30844247 DOI: 10.1021/acsnano.8b08948] [Citation(s) in RCA: 45] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Halide-perovskite microlasers have demonstrated fascinating performance owing to their low-threshold lasing at room temperature and low-cost fabrication. However, being synthesized chemically, controllable fabrication of such microlasers remains challenging, and it requires template-assisted growth or complicated nanolithography. Here, we suggest and implement an approach for the fabrication of microlasers by direct laser ablation of a thin film on glass with donut-shaped femtosecond laser beams. The fabricated microlasers represent MAPbBr xI y microdisks with 760 nm thickness and diameters ranging from 2 to 9 μm that are controlled by a topological charge of the vortex beam. As a result, this method allows one to fabricate single-mode perovskite microlasers operating at room temperature in a broad spectral range (550-800 nm) with Q-factors up to 5500. High-speed fabrication and reproducibility of microdisk parameters, as well as a precise control of their location on a surface, make it possible to fabricate centimeter-sized arrays of such microlasers. Our finding is important for direct writing of fully integrated coherent light sources for advanced photonic and optoelectronic circuitry.
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Affiliation(s)
- Alexey Zhizhchenko
- Far Eastern Federal University , Vladivostok 690091 , Russia
- Institute of Automation and Control Processes (IACP) , Far Eastern Branch of the Russian Academy of Science , Vladivostok 690091 , Russia
| | - Sergey Syubaev
- Far Eastern Federal University , Vladivostok 690091 , Russia
- Institute of Automation and Control Processes (IACP) , Far Eastern Branch of the Russian Academy of Science , Vladivostok 690091 , Russia
| | | | | | - Alexey Porfirev
- Samara National Research University , Samara 443086 , Russia
- Image Processing Systems Institute of the RAS-Branch of FSRC "Crystallography & Photonics" of the Russian Academy of Science , Samara 443001 , Russia
| | | | | | | | | | - Anvar A Zakhidov
- ITMO University , St. Petersburg 197101 , Russia
- University of Texas at Dallas , Richardson , Texas 75080 , United States
| | - Aleksandr A Kuchmizhak
- Far Eastern Federal University , Vladivostok 690091 , Russia
- Institute of Automation and Control Processes (IACP) , Far Eastern Branch of the Russian Academy of Science , Vladivostok 690091 , Russia
| | - Yuri S Kivshar
- ITMO University , St. Petersburg 197101 , Russia
- Nonlinear Physics Centre , Australian National University , Canberra , ACT 2601 , Australia
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All-optical control of lead halide perovskite microlasers. Nat Commun 2019; 10:1770. [PMID: 30992442 PMCID: PMC6467983 DOI: 10.1038/s41467-019-09876-6] [Citation(s) in RCA: 37] [Impact Index Per Article: 7.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/21/2019] [Accepted: 04/02/2019] [Indexed: 11/08/2022] Open
Abstract
Lead halide perovskites based microlasers have recently shown their potential in nanophotonics. However, up to now, all of the perovskite microlasers are static and cannot be dynamically tuned in use. Herein, we demonstrate a robust mechanism to realize the all-optical control of perovskite microlasers. In lead halide perovskite microrods, deterministic mode switching takes place as the external excitation is increased: the onset of a new lasing mode switches off the initial one via a negative power slope, while the main laser characteristics are well kept. This mode switching is reversible with the excitation and has been explained via cross-gain saturation. The modal interaction induced mode switching does not rely on sophisticated cavity designs and is generic in a series of microlasers. The switching time is faster than 70 ps, extending perovskite microlasers to previously inaccessible areas, e.g., optical memory, flip-flop, and ultrafast switches etc.
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28
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Inorganic and Hybrid Perovskite Based Laser Devices: A Review. MATERIALS 2019; 12:ma12060859. [PMID: 30875786 PMCID: PMC6470628 DOI: 10.3390/ma12060859] [Citation(s) in RCA: 41] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2019] [Revised: 03/04/2019] [Accepted: 03/08/2019] [Indexed: 11/17/2022]
Abstract
Inorganic and organic-inorganic (hybrid) perovskite semiconductor materials have attracted worldwide scientific attention and research effort as the new wonder semiconductor material in optoelectronics. Their excellent physical and electronic properties have been exploited to boost the solar cells efficiency beyond 23% and captivate their potential as competitors to the dominant silicon solar cells technology. However, the fundamental principles in Physics, dictate that an excellent direct band gap material for photovoltaic applications must be also an excellent light emitter candidate. This has been realized for the case of perovskite-based light emitting diodes (LEDs) but much less for the case of the respective laser devices. Here, the strides, exclusively in lasing, made since 2014 are presented for the first time. The solution processability, low temperature crystallization, formation of nearly defect free, nanostructures, the long range ambipolar transport, the direct energy band gap, the high spectral emission tunability over the entire visible spectrum and the almost 100% external luminescence efficiency show perovskite semiconductors’ potential to transform the nanophotonics sector. The operational principles, the various adopted material and laser configurations along the future challenges are reviewed and presented in this paper.
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29
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Zheng K, Yuan Y, He J, Gu G, Zhang F, Chen Y, Song J, Qu J. Ultra-high light confinement and ultra-long propagation distance design for integratable optical chips based on plasmonic technology. NANOSCALE 2019; 11:4601-4613. [PMID: 30810128 DOI: 10.1039/c8nr07290f] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
The ever-increasing demand for faster speed, broader bandwidth, and lower energy consumption of on-chip processing has motivated the use of light instead of electrons in functional communication components. However, considerable scattering loss severely affects the performance of nanoscale photonic devices when their physical sizes are smaller than the wavelength of light. Due to the tight localization of electromagnetic energy, plasmonic waveguides that work at visible and infrared wavebands have provided a solution for the optical diffraction limit problem and thus enable downscaling of optical circuits and chips at the nanoscale. However, due to the fundamental trade-off between propagation distance and light confinement, plasmonic waveguides, including conventional hybrid plasmonic waveguides (HPWGs), cannot be used as high performance integratable optical devices all the time. To solve this problem, a novel hybrid plasmonic waveguide is proposed where a hybrid metal-ridge-slot structure based on a two-dimensional (2D) transition metal dichalcogenide is embedded into two identical cylindrical dielectric waveguides. Benefiting from both the loss-less slot region and the high-index difference between the ultra-thin 2D material and the slot region, a 10 times longer propagation length and 100 times smaller mode area than the traditional HPWG are achieved at the telecommunication band. By removing the monolayer transition metal dichalcogenide, our designed waveguide shows a higher propagation length that is at least two orders of magnitude larger than its traditional HPWG counterpart. Therefore, the proposed hybridization waveguiding approach paves the way toward truly high-performance and deep-subwavelength integratable optical circuits and chips in the future.
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Affiliation(s)
- Kai Zheng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.
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30
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Jin L, Wu Y, Wang Y, Liu S, Zhang Y, Li Z, Chen X, Zhang W, Xiao S, Song Q. Mass-Manufactural Lanthanide-Based Ultraviolet B Microlasers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1807079. [PMID: 30589126 DOI: 10.1002/adma.201807079] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2018] [Revised: 11/25/2018] [Indexed: 06/09/2023]
Abstract
Lanthanide (Ln3+ )-based ultraviolet B (UVB) microlasers are highly desirable for diagnostics and phototherapy. Despite their progress, the potential applications of UVB microlasers are strongly hindered by their low optical gain, weak light confinements, and poor device repeatability. Herein, a novel all-in-one approach to solve the above limitations and realize mass-manufactural UVB microlasers is reported. The gain coefficient at 289 nm is improved from two aspects, i.e., the enhanced absorption via LiYbF4 :Tm(1mol%)@LiYbF4 @LiLuF4 core-shell-shell nanocrystals and the suppression of competitive ultraviolet emissions. Consequently, by spin-coating the solution onto a patterned SiO2 substrate, high-quality Ln3+ -based microdisks are formed by self-assembly on each SiO2 pillar and UVB whispering-gallery-mode lasers are realized. The resulted lasing threshold is an order of magnitude smaller than the shortest deep-ultraviolet emission at 310.5 nm. Importantly, the lasing wavelengths and mode numbers of UVB lasers are highly controllable and repeatable, making them suitable for mass production for the first time.
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Affiliation(s)
- Limin Jin
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Yunkai Wu
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Yujie Wang
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Shuai Liu
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Yuqi Zhang
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Zhiying Li
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Xian Chen
- College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Wenfei Zhang
- Shenzhen Key Laboratory of Laser EngineeringCollege of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shumin Xiao
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, Shanxi, P. R. China
| | - Qinghai Song
- State Key Laboratory on Tunable laser Technology, Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, Shanxi, P. R. China
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31
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Ma RM, Oulton RF. Applications of nanolasers. NATURE NANOTECHNOLOGY 2019; 14:12-22. [PMID: 30559486 DOI: 10.1038/s41565-018-0320-y] [Citation(s) in RCA: 116] [Impact Index Per Article: 23.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2017] [Accepted: 10/31/2018] [Indexed: 05/22/2023]
Abstract
Nanolasers generate coherent light at the nanoscale. In the past decade, they have attracted intense interest, because they are more compact, faster and more power-efficient than conventional lasers. Thanks to these capabilities, nanolasers are now an emergent tool for a variety of practical applications. In this Review, we explain the intrinsic merits of nanolasers and assess recent progress on their applications, particularly for optical interconnects, near-field spectroscopy and sensing, optical probing for biological systems and far-field beam synthesis through near-field eigenmode engineering. We highlight the scientific and engineering challenges that remain for forging nanolasers into powerful tools for nanoscience and nanotechnology.
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Affiliation(s)
- Ren-Min Ma
- State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, China.
- Collaborative Innovation Center of Quantum Matter, Beijing, China.
| | - Rupert F Oulton
- The Blackett Laboratory, Department of Physics, Imperial College London, London, UK
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32
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Li Z, Moon J, Gharajeh A, Haroldson R, Hawkins R, Hu W, Zakhidov A, Gu Q. Room-Temperature Continuous-Wave Operation of Organometal Halide Perovskite Lasers. ACS NANO 2018; 12:10968-10976. [PMID: 30383358 DOI: 10.1021/acsnano.8b04854] [Citation(s) in RCA: 62] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Solution-processed organic-inorganic lead halide perovskites have recently emerged as promising gain media for tunable semiconductor lasers. However, optically pumped continuous-wave lasing at room temperature, a prerequisite for a laser diode, has not been realized so far. Here, we report lasing action in a surface-emitting distributed feedback methylammonium lead iodide (MAPbI3) perovskite laser on a silicon substrate at room temperature under continuous-wave optical pumping. This outstanding performance is achieved because of the ultralow lasing threshold of 13 W/cm2, which is enabled by thermal nanoimprint lithography that directly patterns perovskite into a high- Q cavity with large mode confinement, while at the same time, it improves perovskite's emission characteristics. Our results represent a major step toward electrically pumped lasing in organic and thin-film materials as well as the insertion of perovskite lasers into photonic integrated circuits for applications in optical computing, sensing, and on-chip quantum information.
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Affiliation(s)
| | | | | | | | | | - Walter Hu
- ASIC and System State Key Lab, Institute of Microelectronics , Fudan University , Shanghai 200433 , China
| | - Anvar Zakhidov
- Department of Nanophotonics and Metamaterials , ITMO University , Saint Petersburg 197101 , Russia
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33
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Vovk IA, Tepliakov NV, Baimuratov AS, Leonov MY, Baranov AV, Fedorov AV, Rukhlenko ID. Excitonic phenomena in perovskite quantum-dot supercrystals. Phys Chem Chem Phys 2018; 20:25023-25030. [PMID: 30246191 DOI: 10.1039/c8cp04724c] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
Quantum confinement and collective excitations in perovskite quantum-dot (QD) supercrystals offer multiple benefits to the light emitting and solar energy harvesting devices of modern photovoltaics. Recent advances in the fabrication technology of low dimensional perovskites has made the production of such supercrystals a reality and created a high demand for the modelling of excitonic phenomena inside them. Here we present a rigorous theory of Frenkel excitons in lead halide perovskite QD supercrystals with a square Bravais lattice. The theory shows that such supercrystals support three bright exciton modes whose dispersion and polarization properties are controlled by the symmetry of the perovskite lattice and the orientations of QDs. The effective masses of excitons are found to scale with the ratio of the superlattice period and the number of QDs along the supercrystal edge, allowing one to fine-tune the electro-optical response of the supercrystals as desired for applications. We also calculate the conductivity of perovskite QD supercrystals and analyze how it is affected by the optical generation of the three types of excitons. This paper provides a solid theoretical basis for the modelling of two- and three-dimensional supercrystals made of perovskite QDs and the engineering of photovoltaic devices with superior optoelectronic properties.
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Affiliation(s)
- Ilia A Vovk
- Information Optical Technologies Centre, ITMO University, Saint Petersburg 197101, Russia.
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