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Meng Y, Cheng G. Human somatosensory systems based on sensor-memory-integrated technology. NANOSCALE 2024; 16:11928-11958. [PMID: 38847091 DOI: 10.1039/d3nr06521a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/28/2024]
Abstract
As a representative artificial neural network (ANN) for incorporating sensing functions and memory functions into one system to achieve highly miniaturized and highly integrated devices or systems, artificial sensory systems (ASSs) can have a far-reaching influence on precise instrumentation, sensing, and automation engineering. Artificial sensory systems have enjoyed considerable progress in recent years, from low degree integrations to highly advanced sophisticated integrations, from single-modal perceptions to multimode-fused perceptions. However, there are issues around the large hardware area, power consumption, and communication bandwidth needed during the processes where multimodal sensing signals are converted into a digital mode before they can be processed by a digital processor. Therefore, deepening the research into sensory integration is of great importance. In this review, we briefly introduce fundamental knowledge about the memristor mechanism, describe some representative human somatosensory systems, and elucidate the relationship between the properties of memristor devices and the structure. The electronic character of the sensors, future prospects, and key challenges surrounding sensor-memory integrated technologies are also discussed.
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Affiliation(s)
- Yanfang Meng
- Institute of Intelligent Flexible Mechatronics, School of Mechanical Engineering, Jiangsu University, Zhenjiang, No. 301 Xuefu Road, Zhenjiang, Jiangsu Province, 212013, China.
| | - Guanggui Cheng
- Institute of Intelligent Flexible Mechatronics, School of Mechanical Engineering, Jiangsu University, Zhenjiang, No. 301 Xuefu Road, Zhenjiang, Jiangsu Province, 212013, China.
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2
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Chen Z, Liu W, Zhang B, Wu K, Li Z, Bing P, Tan L, Zhang H, Yao J. Nanoscale and ultra-high extinction ratio optical memristive switch based on plasmonic waveguide with square cavity. APPLIED OPTICS 2023; 62:27-33. [PMID: 36606845 DOI: 10.1364/ao.476510] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Accepted: 11/20/2022] [Indexed: 06/17/2023]
Abstract
A resistive switch effect-based optical memristive switch with an ultra-high extinction ratio and ultra-compact size working at 1550 nm is proposed. The device is composed of a metal-insulator-metal waveguide and a square resonator with active electrodes. The formation and rupture of conductive filaments in the resonant cavity can alter the resonant wavelength, which triggers the state of the optical switch ON or OFF. The numerical results demonstrate that the structure has an ultra-compact size (less than 1 µm) and ultra-high extinction ratio (37 dB). The proposed device is expected to address the problems of high-power consumption and large-scale optical switches and can be adopted in optical switches, optical modulation, optical storage and computing, and large-scale photonic integrated devices.
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3
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Wang W, Gao S, Wang Y, Li Y, Yue W, Niu H, Yin F, Guo Y, Shen G. Advances in Emerging Photonic Memristive and Memristive-Like Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105577. [PMID: 35945187 PMCID: PMC9534950 DOI: 10.1002/advs.202105577] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2021] [Revised: 06/06/2022] [Indexed: 05/19/2023]
Abstract
Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.
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Affiliation(s)
- Wenxiao Wang
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Song Gao
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yaqi Wang
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yang Li
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Wenjing Yue
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Hongsen Niu
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Feifei Yin
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Yunjian Guo
- School of Information Science and EngineeringShandong Provincial Key Laboratory of Network Based Intelligent ComputingUniversity of JinanJinan250022China
| | - Guozhen Shen
- School of Integrated Circuits and ElectronicsBeijing Institute of TechnologyBeijing100081China
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4
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Milano G, Aono M, Boarino L, Celano U, Hasegawa T, Kozicki M, Majumdar S, Menghini M, Miranda E, Ricciardi C, Tappertzhofen S, Terabe K, Valov I. Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201248. [PMID: 35404522 DOI: 10.1002/adma.202201248] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2022] [Revised: 03/23/2022] [Indexed: 06/14/2023]
Abstract
Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next-generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic-sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.
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Affiliation(s)
- Gianluca Milano
- Advanced Materials Metrology and Life Sciences Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, Torino, 10135, Italy
| | - Masakazu Aono
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Luca Boarino
- Advanced Materials Metrology and Life Sciences Division, INRiM (Istituto Nazionale di Ricerca Metrologica), Strada delle Cacce 91, Torino, 10135, Italy
| | - Umberto Celano
- IMEC, Kapeldreef 75, Heverlee, Leuven, B-3001, Belgium
- Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, Enschede, NB, 7522, The Netherlands
| | - Tsuyoshi Hasegawa
- Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo, 169-8555, Japan
| | - Michael Kozicki
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA
| | - Sayani Majumdar
- VTT Technical Research Centre of Finland Ltd., VTT, P.O. Box 1000, Espoo, FI-02044, Finland
| | | | - Enrique Miranda
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), Barcelona, 08193, Spain
| | - Carlo Ricciardi
- Department of Applied Science and Technology, Politecnico di Torino, C.so Duca degli Abruzzi 24, Torino, 10129, Italy
| | - Stefan Tappertzhofen
- Chair for Micro- and Nanoelectronics, Department of Electrical Engineering and Information Technology, TU Dortmund University, Emil-Figge-Straße 68, D-44227, Dortmund, Germany
| | - Kazuya Terabe
- International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Ilia Valov
- JARA - Fundamentals for Future Information Technology, 52425, Jülich, Germany
- Peter-Grünberg-Institut (PGI 7), Forschungszentrum Jülich, Wilhelm-Johnen-Straße, 52425, Jülich, Germany
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Cheng B, Zellweger T, Malchow K, Zhang X, Lewerenz M, Passerini E, Aeschlimann J, Koch U, Luisier M, Emboras A, Bouhelier A, Leuthold J. Atomic scale memristive photon source. LIGHT, SCIENCE & APPLICATIONS 2022; 11:78. [PMID: 35351848 PMCID: PMC8964763 DOI: 10.1038/s41377-022-00766-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/12/2021] [Revised: 02/20/2022] [Accepted: 03/08/2022] [Indexed: 06/14/2023]
Abstract
Memristive devices are an emerging new type of devices operating at the scale of a few or even single atoms. They are currently used as storage elements and are investigated for performing in-memory and neuromorphic computing. Amongst these devices, Ag/amorphous-SiOx/Pt memristors are among the most studied systems, with the electrically induced filament growth and dynamics being thoroughly investigated both theoretically and experimentally. In this paper, we report the observation of a novel feature in these devices: The appearance of new photoluminescent centers in SiOx upon memristive switching, and photon emission correlated with the conductance changes. This observation might pave the way towards an intrinsically memristive atomic scale light source with applications in neural networks, optical interconnects, and quantum communication.
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Affiliation(s)
- Bojun Cheng
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland.
| | - Till Zellweger
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Konstantin Malchow
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne Franche-Comté, Dijon, 21078, France
| | - Xinzhi Zhang
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Mila Lewerenz
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Elias Passerini
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Jan Aeschlimann
- ETH Zurich, Integrated Systems Laboratory, Zurich, 8092, Switzerland
| | - Ueli Koch
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland
| | - Mathieu Luisier
- ETH Zurich, Integrated Systems Laboratory, Zurich, 8092, Switzerland
| | | | - Alexandre Bouhelier
- Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS, Université de Bourgogne Franche-Comté, Dijon, 21078, France
| | - Juerg Leuthold
- ETH Zurich, Institute of Electromagnetic Fields, Zurich, 8092, Switzerland.
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Portner K, Schmuck M, Lehmann P, Weilenmann C, Haffner C, Ma P, Leuthold J, Luisier M, Emboras A. Analog Nanoscale Electro-Optical Synapses for Neuromorphic Computing Applications. ACS NANO 2021; 15:14776-14785. [PMID: 34459580 DOI: 10.1021/acsnano.1c04654] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
The typically nonlinear and asymmetric response of synaptic memristors to positive and negative electrical pulses makes the realization of accurate deep neural networks very challenging. Here, we integrate a two-terminal valence change memory (VCM) into a photonic/plasmonic circuit and show that the switching properties of this memristor become more gradual and symmetric under light irradiation. The added optical input acts on the VCM as a third, independent modulation channel. It locally heats the active area of the device, which enhances the generation of oxygen vacancies and broadens the resulting nanoscale conductive filaments. The measured conductance modulation of the VCM is then inserted into a neural network simulator. Using the MNIST data set of handwritten digits as an application, a light-enhanced recognition accuracy of 93.53% is demonstrated, similar to ideally performing memristors (94.86%) and much higher than those without light (67.37%). Notably, the optical signal does not increase the overall energy consumption by more than 3.2%. Finally, an approach to scale up our electro-optical technology is proposed, which could allow high-density, energy-efficient neuromorphic computing chips.
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Affiliation(s)
- Kevin Portner
- Integrated Systems Laboratory, ETH Zurich, 8092 Zurich, Switzerland
| | - Manuel Schmuck
- Integrated Systems Laboratory, ETH Zurich, 8092 Zurich, Switzerland
| | - Paul Lehmann
- Integrated Systems Laboratory, ETH Zurich, 8092 Zurich, Switzerland
| | | | - Christian Haffner
- Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
- imec, B-3001 Leuven, Belgium
| | - Ping Ma
- Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Juerg Leuthold
- Institute of Electromagnetic Fields (IEF), ETH Zurich, 8092 Zurich, Switzerland
| | - Mathieu Luisier
- Integrated Systems Laboratory, ETH Zurich, 8092 Zurich, Switzerland
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Hassan MY, Ang DS. On-Demand Visible-Light Sensing with Optical Memory Capabilities Based on an Electrical-Breakdown-Triggered Negative Photoconductivity Effect in the Ubiquitous Transparent Hafnia. ACS APPLIED MATERIALS & INTERFACES 2019; 11:42339-42348. [PMID: 31633322 DOI: 10.1021/acsami.9b13552] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A transparent visible-light sensor may sound like an oxymoron. Indeed, this scenario is often deemed challenging in conventional photosensitive semiconducting materials due to the complementary relationship between absorbance (which determines photosensitivity) and transmittance (which determines transparency). Past studies have relied on photoinduced ionization of vacancy defect states within a wide-band-gap oxide to modulate the flow of current or charge storage in specific device structures such as nanorods, hetero oxide junctions, or thin-film transistors. Here, we demonstrate visible-light-sensing and optical memory functions in a thin, optically transparent wide-band-gap oxide such as the ubiquitous hafnium dioxide, following a soft electrical breakdown. The physical mechanism is distinguished by a persistent current decrease that spans several orders of magnitude, indicating that the breakdown oxide is restored by the visible light. Physical characterization by X-ray photoelectron spectroscopy and the first-principles simulation study based on the density functional theory provide a strong support for the proposed light-assisted recombination of electrically induced Frenkel-pair defects as the underlying mechanism for the observed negative photoconductance response and optical memory effect. By harnessing this alternative mechanism, this work demonstrates a different approach of overcoming the traditional barrier in realizing both transparency and on-demand visible-light sensing with optical memory functions all in a single device.
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Affiliation(s)
- Mohamed Yousef Hassan
- School of Electrical and Electronics Engineering , Nanyang Technological University , 50 Nanyang Avenue , 639798 Singapore
| | - Diing Shenp Ang
- School of Electrical and Electronics Engineering , Nanyang Technological University , 50 Nanyang Avenue , 639798 Singapore
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