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Fan N, Wang Y, Liu B, Yang H, Liu S. Origin and Mechanism of Piezoelectric and Photovoltaic Effects in (111) Polar Orientated NiO Films. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2304637. [PMID: 37751305 PMCID: PMC10646231 DOI: 10.1002/advs.202304637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Indexed: 09/27/2023]
Abstract
Based on the current piezoelectric theory, NiO with the centrosymmetric structure is not piezoelectric. However, herein, this study shows the first observation of piezoelectric generation, rectifyingand bulk photovoltaic behaviors in NiO films with [111] orientation and the change in NiO crystal structure in piezoelectric process. The piezoelectric generation, rectifying, and bulk photovoltaic performances are enhanced by increasing (111) orientation, and attenuated and eliminated by applying a persistent stress on the NiO film. The NiO [111] is polar direction, and thus a spontaneous electric field (ES ) is in the NiO film with [111] orientation. The existence of Es in (111) oriented NiO film is found to be the physical basis of the piezoelectric generators and photovoltaic and rectifying effects. Thus, NiO piezoelectric, rectifying, and bulk photovoltaic mechanism are presented at the atomic level. The mechanism may rewrite the current piezoelectric theory, and establish a unified theory of polar structure with wide implications. The polar-orientated films can be used to fabricate piezoelectric generators and other optoelectronic devices with high performances.
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Affiliation(s)
- Nana Fan
- Shaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Laboratory for Advanced Energy TechnologyKey Laboratory of Macromolecular Science of Shaanxi ProvinceSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
| | - Yingfei Wang
- Shaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Laboratory for Advanced Energy TechnologyKey Laboratory of Macromolecular Science of Shaanxi ProvinceSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
| | - Bin Liu
- Shaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Laboratory for Advanced Energy TechnologyKey Laboratory of Macromolecular Science of Shaanxi ProvinceSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
| | - Heqing Yang
- Shaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Laboratory for Advanced Energy TechnologyKey Laboratory of Macromolecular Science of Shaanxi ProvinceSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
| | - Shengzhong Liu
- Key Laboratory of Applied Surface and Colloid ChemistryNational Ministry of EducationShaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Lab for Advanced Energy TechnologySchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119China
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2
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Zhou K, Shang G, Hsu HH, Han ST, Roy VAL, Zhou Y. Emerging 2D Metal Oxides: From Synthesis to Device Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207774. [PMID: 36333890 DOI: 10.1002/adma.202207774] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 10/26/2022] [Indexed: 05/26/2023]
Abstract
2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.
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Affiliation(s)
- Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Gang Shang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Hsiao-Hsuan Hsu
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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3
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Li B, Xie Z, Liu H, Tang L, Chen K. A Review of Ultrathin Piezoelectric Films. MATERIALS (BASEL, SWITZERLAND) 2023; 16:3107. [PMID: 37109944 PMCID: PMC10144961 DOI: 10.3390/ma16083107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 04/11/2023] [Accepted: 04/13/2023] [Indexed: 06/19/2023]
Abstract
Due to their high electromechanical coupling and energy density properties, ultrathin piezoelectric films have recently been intensively studied as key materials for the construction of miniaturized energy transducers, and in this paper we summarize the research progress. At the nanoscale, even a few atomic layers, ultrathin piezoelectric films have prominent shape anisotropic polarization, that is, in-plane polarization and out-of-plane polarization. In this review, we first introduce the in-plane and out-of-plane polarization mechanism, and then summarize the main ultrathin piezoelectric films studied at present. Secondly, we take perovskite, transition metal dichalcogenides, and Janus layers as examples to elaborate the existing scientific and engineering problems in the research of polarization, and their possible solutions. Finally, the application prospect of ultrathin piezoelectric films in miniaturized energy converters is summarized.
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4
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Zhang H, Gao H, Geng J, Meng X, Xie H. In Situ Quantification of Strain-Induced Piezoelectric Potential of Dynamically Bending ZnO Microwires. SMALL METHODS 2023; 7:e2201342. [PMID: 36683180 DOI: 10.1002/smtd.202201342] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 12/19/2022] [Indexed: 06/17/2023]
Abstract
The piezoelectric properties of semiconductor micro/nanowires (M/NWs) are crucial for optimizing semiconductors' electronic structure and carrier dynamics. However, the dynamic characterization of the piezoelectric properties of M/NWs remains challenging. Here, a Kelvin probe force microscopy technique based on a dual-probe atomic force microscope is developed to achieve in situ piezoelectric potential measurements of dynamic bending MWs. This technique can not only characterize the surface potential on different crystal faces of ZnO MWs in a natural state through controllable axial rotation, but also investigate the piezoelectric potential of the dynamically bending flake-like ZnO MW at different points and under different strain loads. The results show that the surface potentials of different faces/positions of the ZnO MWs are varied significantly, and determine that the quasi-static conditions piezo-strain factor of the flake-like ZnO MW is 0.28 V/%, while the factor was 0.14 V/% under low-frequency (⩽5 Hz) sinusoidal strain loading. This work provides a significant methodology to further study piezoelectric materials, and it aims to facilitate their applications in piezoelectric devices and systems.
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Affiliation(s)
- Hao Zhang
- State Key Laboratory of Robotics and Systems, Harbin Institute of Technology, Harbin, 150080, China
| | - Haibo Gao
- State Key Laboratory of Robotics and Systems, Harbin Institute of Technology, Harbin, 150080, China
| | - Junyuan Geng
- State Key Laboratory of Robotics and Systems, Harbin Institute of Technology, Harbin, 150080, China
| | - Xianghe Meng
- State Key Laboratory of Robotics and Systems, Harbin Institute of Technology, Harbin, 150080, China
| | - Hui Xie
- State Key Laboratory of Robotics and Systems, Harbin Institute of Technology, Harbin, 150080, China
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5
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Zhang H, Tian G, Xiong D, Yang T, Wang S, Sun Y, Jin L, Lan B, Deng L, Yang W, Deng W. Carrier concentration-dependent interface engineering for high-performance zinc oxide piezoelectric device. J Colloid Interface Sci 2023; 629:534-540. [DOI: 10.1016/j.jcis.2022.08.181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 08/06/2022] [Accepted: 08/30/2022] [Indexed: 11/15/2022]
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6
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Wang Y, Xie W, Peng W, Li F, He Y. Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics. MICROMACHINES 2022; 14:mi14010047. [PMID: 36677109 PMCID: PMC9860666 DOI: 10.3390/mi14010047] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/20/2022] [Accepted: 12/22/2022] [Indexed: 06/02/2023]
Abstract
The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.
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Affiliation(s)
- Yitong Wang
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Wanli Xie
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Wenbo Peng
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
| | - Fangpei Li
- State Key Laboratory of Solidification Processing, Key Laboratory of Radiation Detection Materials and Devices, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China
| | - Yongning He
- School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi’an City, Xi’an 710049, China
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7
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Hu X, Liu K, Cai Y, Zang SQ, Zhai T. 2D Oxides for Electronics and Optoelectronics. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202200008] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Affiliation(s)
- Xiaozong Hu
- Henan Key Laboratory of Crystalline Molecular Functional Materials Henan International Joint Laboratory of Tumor Theranostical Cluster Materials Green Catalysis Center, and College of Chemistry Zhengzhou University Zhengzhou 450001 P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan 430074 P. R. China
| | - Yongqing Cai
- Joint Key Laboratory of the Ministry of Education Institute of Applied Physics and Materials Engineering University of Macau Taipa 999078 Macau P. R. China
| | - Shuang-Quan Zang
- Henan Key Laboratory of Crystalline Molecular Functional Materials Henan International Joint Laboratory of Tumor Theranostical Cluster Materials Green Catalysis Center, and College of Chemistry Zhengzhou University Zhengzhou 450001 P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology Wuhan 430074 P. R. China
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8
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 57] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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9
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Oh H, Yi GC. Synthesis of Atomically Thin h-BN Layers Using BCl 3 and NH 3 by Sequential-Pulsed Chemical Vapor Deposition on Cu Foil. NANOMATERIALS 2021; 12:nano12010080. [PMID: 35010030 PMCID: PMC8746830 DOI: 10.3390/nano12010080] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/06/2021] [Revised: 12/13/2021] [Accepted: 12/27/2021] [Indexed: 11/25/2022]
Abstract
The chemical vapor deposition of hexagonal boron nitride layers from BCl3 and NH3 is highly beneficial for scalable synthesis with high controllability, yet multiple challenges such as corrosive reaction or by-product formation have hindered its successful demonstration. Here, we report the synthesis of polycrystalline hexagonal boron nitride (h-BN) layers on copper foil using BCl3 and NH3. The sequential pulse injection of precursors leads to the formation of atomically thin h-BN layers with a polycrystalline structure. The relationship between growth temperature and crystallinity of the h-BN film is investigated using transmission electron microscopy and Raman spectroscopy. Investigation on the initial growth mode achieved by the suppression of precursor supply revealed the formation of triangular domains and existence of preferred crystal orientations. The possible growth mechanism of h-BN in this sequential-pulsed CVD is discussed.
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Affiliation(s)
- Hongseok Oh
- Department of Physics and Integrative Institute of Basic Science, Soongsil University, Seoul 06978, Korea;
| | - Gyu-Chul Yi
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
- Correspondence:
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10
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Carlos C, Wang Y, Wang J, Li J, Wang X. Thickness-Dependent Piezoelectric Property from Quasi-Two-Dimensional Zinc Oxide Nanosheets with Unit Cell Resolution. RESEARCH (WASHINGTON, D.C.) 2021; 2021:1519340. [PMID: 33728409 PMCID: PMC7936626 DOI: 10.34133/2021/1519340] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/22/2020] [Accepted: 01/26/2021] [Indexed: 11/06/2022]
Abstract
A quantitative understanding of the nanoscale piezoelectric property will unlock many application potentials of the electromechanical coupling phenomenon under quantum confinement. In this work, we present an atomic force microscopy- (AFM-) based approach to the quantification of the nanometer-scale piezoelectric property from single-crystalline zinc oxide nanosheets (NSs) with thicknesses ranging from 1 to 4 nm. By identifying the appropriate driving potential, we minimized the influences from electrostatic interactions and tip-sample coupling, and extrapolated the thickness-dependent piezoelectric coefficient (d 33). By averaging the measured d 33 from NSs with the same number of unit cells in thickness, an intriguing tri-unit-cell relationship was observed. From NSs with 3n unit cell thickness (n = 1, 2, 3), a bulk-like d 33 at a value of ~9 pm/V was obtained, whereas NSs with other thickness showed a ~30% higher d 33 of ~12 pm/V. Quantification of d 33 as a function of ZnO unit cell numbers offers a new experimental discovery toward nanoscale piezoelectricity from nonlayered materials that are piezoelectric in bulk.
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Affiliation(s)
- Corey Carlos
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
| | - Yizhan Wang
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
| | - Jingyu Wang
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
| | - Jun Li
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
| | - Xudong Wang
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, Wisconsin 53706, USA
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Affiliation(s)
- Gong Chen
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Pan-shuo Wang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
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12
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Oh H, Dayeh SA. Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices. SENSORS (BASEL, SWITZERLAND) 2020; 20:E3872. [PMID: 32664467 PMCID: PMC7411910 DOI: 10.3390/s20143872] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/13/2020] [Revised: 05/19/2020] [Accepted: 05/22/2020] [Indexed: 11/17/2022]
Abstract
Piezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readily built-in amplification and ability for multiplexing, which are essential for wearables, medical devices, and robotics. This paper reviews recent progress in active piezoelectric devices. We classify these piezoelectric devices according to the material dimensionality and present physics-based device models to describe and quantify the piezoelectric response for one-dimensional nanowires, emerging two-dimensional materials, and three-dimensional thin films. Different transduction mechanisms and state-of-the-art devices for each type of material are reviewed. Perspectives on the future applications of active piezoelectric devices are discussed.
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Affiliation(s)
- Hongseok Oh
- Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
| | - Shadi A Dayeh
- Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
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13
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Wu J, Gao F, Shao G, Du Z, Yang W, Wang L, Wang Z, Chen S. Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect. ACS APPLIED MATERIALS & INTERFACES 2020; 12:21903-21911. [PMID: 32319289 DOI: 10.1021/acsami.0c04111] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Improving the sensitivity of the piezoresistive behavior of semiconductor nanostructures is critically important because it is one of the keys to explore advanced pressure sensors with desired sensitivity. Herein, we reported a strategy for improving the piezoresistive behavior of SiC nanowire by coupling with the piezoelectric effect of ZnO nanolayers, which were grown by an atomic layer deposition approach. As a result, the detected current of the as-constructed ZnO/SiC heterojunction nanowires is 6 times more than SiC nanowires, suggesting its substantially improved sensitivity. Moreover, the measured ΔR/R0 value and gauge factor (GF) of the ZnO/SiC heterojunction nanowires could be up to 0.82 and 50.93, respectively, which was profoundly higher than those of the SiC counterpart and most of reported positive piezoresistive SiC sensors.
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Affiliation(s)
- Jie Wu
- Institute of New Carbon Materials, Taiyuan University of Technology, Taiyuan 030024, P.R. China
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P.R. China
| | - Fengmei Gao
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P.R. China
| | - Gang Shao
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Zhentao Du
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P.R. China
| | - Weiyou Yang
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P.R. China
| | - Lin Wang
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P.R. China
| | - Zhenxia Wang
- Institute of New Carbon Materials, Taiyuan University of Technology, Taiyuan 030024, P.R. China
| | - Shanliang Chen
- Institute of Materials, Ningbo University of Technology, Ningbo 315211, P.R. China
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Ghasemian MB, Daeneke T, Shahrbabaki Z, Yang J, Kalantar-Zadeh K. Peculiar piezoelectricity of atomically thin planar structures. NANOSCALE 2020; 12:2875-2901. [PMID: 31984979 DOI: 10.1039/c9nr08063e] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.
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Affiliation(s)
- Mohammad B Ghasemian
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney Campus, NSW 2052, Australia.
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15
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Unprecedented efficient electron transport across Au nanoparticles with up to 25-nm insulating SiO 2-shells. Sci Rep 2019; 9:18336. [PMID: 31797902 PMCID: PMC6892908 DOI: 10.1038/s41598-019-54835-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2019] [Accepted: 11/11/2019] [Indexed: 01/04/2023] Open
Abstract
Quantum tunneling is the basis of molecular electronics, but often its electron transport range is too short to overcome technical defects caused by downscaling of electronic devices, which limits the development of molecular-/nano-electronics. Marrying electronics with plasmonics may well present a revolutionary way to meet this challenge as it can manipulate electron flow with plasmonics at the nanoscale. Here we report on unusually efficient temperature-independent electron transport, with some photoconductivity, across a new type of junction with active plasmonics. The junction is made by assembly of SiO2 shell-insulated Au nanoparticles (Au@SiO2 NPs) into dense nanomembranes of a few Au@SiO2 layers thick and transport is measured across these membranes. We propose that the mechanism is plasmon-enabled transport, possibly tunneling (as it is temperature-independent). Unprecedentedly ultra-long-range transport across one, up to even three layers of Au@SiO2 in the junction, with a cumulative insulating (silica) gap up to 29 nm/NP layer was achieved, well beyond the measurable limit for normal quantum mechanical tunneling across insulators (~2.5 nm at 0.5–1 V). This finding opens up a new interdisciplinary field of exploration in nanoelectronics with wide potential impact on such areas as electronic information transfer.
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16
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Liu S, Wang L, Feng X, Liu J, Qin Y, Wang ZL. Piezotronic Tunneling Junction Gated by Mechanical Stimuli. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1905436. [PMID: 31643113 DOI: 10.1002/adma.201905436] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2019] [Revised: 10/07/2019] [Indexed: 06/10/2023]
Abstract
Tunneling junction is used in many devices such as high-frequency oscillators, nonvolatile memories, and magnetic field sensors. In these devices, modulation on the barrier width and/or height is usually realized by electric field or magnetic field. Here, a new piezotronic tunneling junction (PTJ) principle, in which the quantum tunneling is controlled/tuned by externally applied mechanical stimuli, is proposed. In these metal/insulator/piezoelectric semiconductor PTJs, such as Pt/Al2 O3 /p-GaN, the height and the width of the tunneling barriers can be mechanically modulated via the piezotronic effect. The tunneling current characteristics of PTJs exhibit critical behavior as a function of external mechanical stimuli, which results in high sensitivity (≈5.59 mV MPa-1 ), giant switching (>105 ), and fast response (≈4.38 ms). Moreover, the mechanical controlling of tunneling transport in PTJs with various thickness of Al2 O3 is systematically investigated. The high performance observed with these metal/insulator/piezoelectric semiconductor PTJs suggest their great potential in electromechanical technology. This study not only demonstrates dynamic mechanical controlling of quantum tunneling, but also paves a way for adaptive interaction between quantum tunneling and mechanical stimuli, with potential applications in the field of ultrasensitive press sensor, human-machine interface, and artificial intelligence.
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Affiliation(s)
- Shuhai Liu
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi, 710071, China
| | - Longfei Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Xiaolong Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Jinmei Liu
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi, 710071, China
| | - Yong Qin
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Lanzhou, Gansu, 730000, China
| | - Zhong Lin Wang
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
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17
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Pan C, Zhai J, Wang ZL. Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires. Chem Rev 2019; 119:9303-9359. [PMID: 31364835 DOI: 10.1021/acs.chemrev.8b00599] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.
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Affiliation(s)
- Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , P. R. China.,School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China.,School of Material Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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18
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Ma W, Lu J, Yang Z, Peng D, Li F, Peng Y, Chen Q, Sun J, Xi J, Pan C. Crystal-Orientation-Related Dynamic Tuning of the Lasing Spectra of CdS Nanobelts by Piezoelectric Polarization. ACS NANO 2019; 13:5049-5057. [PMID: 31013417 DOI: 10.1021/acsnano.9b01735] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Realizing dynamic wavelength tunability could bring about tremendous impacts in laser technology, pressure nanosensing, and lab-on-a-chip devices. Here, we demonstrate an original strategy to operate the lasing mode shift through reversible length changes of a CdS nanobelt, which is determined by the direction of piezoelectric polarization. The relationships between the direction of applied strain, the lasing mode shift, and the tunable effective refractive index are elaborated in detail. The correlation between the piezoelectric polarization-induced lasing mode red shift and the blue shift in the wavelength of the lasing mode output caused by the Poisson effect is discussed in depth, as well. Our study comprehensively considers the influence of both the cavity size variations and refractive index changes on the control of the lasing mode and provides a deeper understanding of the strain-induced lasing mode shift.
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Affiliation(s)
- Wenda Ma
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Junfeng Lu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Zheng Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Dengfeng Peng
- College of Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , China
| | - Fangtao Li
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
| | - Yiyao Peng
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Qiushuo Chen
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
| | - Junlu Sun
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
| | - Jianguo Xi
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , China
- School of Nanoscience and Technology , University of Chinese Academy of Sciences , Beijing 100049 , China
- Center on Nanoenergy Research, School of Physical Science and Technology , Guangxi University , Nanning 530004 , China
- College of Optoelectronic Engineering , Shenzhen University , Shenzhen 518060 , China
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19
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Hussain N, Zhang MH, Zhang Q, Zhou Z, Xu X, Murtaza M, Zhang R, Wei H, Ou G, Wang D, Wang K, Li JF, Wu H. Large Piezoelectric Strain in Sub-10 Nanometer Two-Dimensional Polyvinylidene Fluoride Nanoflakes. ACS NANO 2019; 13:4496-4506. [PMID: 30883093 DOI: 10.1021/acsnano.9b00104] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Functional polymers such as polyvinylidene fluoride (PVDF) and its copolymers, which exhibit room-temperature piezoelectricity and ferroelectricity in two-dimensional (2D) limit, are promising candidates to substitute hazardous lead-based piezoceramics for flexible nanoelectronic and electromechanical energy-harvesting applications. However, realization of many polymers including PVDF in ultrathin 2D nanostructures with desired crystal phases and tunable properties remains challenging due to ineffective conventional synthesis methods. Consequently, it has remained elusive to obtain optimized piezoelectric performance of PVDF particularly in sub-10 nm regimes. Taking advantage of its high flexibility and easy processing, we fabricate ultrathin PVDF nanoflakes with thicknesses down to 7 nm by using a hot-pressing method. This thermo-mechanical strategy simultaneously induces robust thermodynamic α to electroactive β-phase transformation, with β fraction as high as 92.8% in sub-10 nm flakes. Subsequently, piezoelectric studies performed by using piezoresponse force microscopy reveal an excellent piezoelectric strain of 0.7% in 7 nm film and the highest piezoelectric coefficient ( d33) achieved is -68 pm/V for 50 nm-thick nanoflakes, which is 13% higher than the piezoresponse from 50 nm-thick PZT nanofilms. Our results further suggest thickness modulation as an effective strategy to tune the piezoelectric performance of PVDF and affirm its supremacy over conventional piezoceramics especially at nanoscale. This work aims not only to help understand fundamental piezoelectricity of pure PVDF in sub-10 nm regimes but also provides an opportunity to realize other polymer-based 2D nanocrystals.
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Affiliation(s)
- Naveed Hussain
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Mao-Hua Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Qingyun Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Zhen Zhou
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Xingyu Xu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Muhammad Murtaza
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Ruoyu Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Hehe Wei
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Gang Ou
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Dong Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Ke Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Hui Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
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20
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Liu B, Wang M, Chen M, Wang J, Liu J, Hu D, Liu S, Yao X, Yang H. Effect of TC(002) on the Output Current of a ZnO Thin-Film Nanogenerator and a New Piezoelectricity Mechanism at the Atomic Level. ACS APPLIED MATERIALS & INTERFACES 2019; 11:12656-12665. [PMID: 30844227 DOI: 10.1021/acsami.9b00677] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Understanding the piezoelectricity mechanism is crucial for developing new materials for better performance. Here, we developed a nanogenerator based on the ZnO thin films having various TC(002) values. The output current well correlated to the magnitude of (002) texture coefficient (TC(002)). Additionally, the TC(002)-dependent photovoltaic and rectification properties are observed. When the film is subjected to persistent compression, the photovoltaic, rectification, and piezoelectric properties fade away. Based on our observation that the ZnO polar structure always shows a spontaneous electron field (SEF), we thus propose a new piezoelectricity mechanism. The [001]-orientated ZnO thin film with the SEF is equivalent to a capacitor, the compression functions as a discharging process, and the removal of the external stress serves as a charging process. The physical mechanism provides an insight into various energy conversion processes that will inspire advanced designs of high-performance nanogenerators, solar cells, and other optoelectronic devices.
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Affiliation(s)
| | | | | | | | | | | | | | - Xi Yao
- Electronic Materials Research Laboratory , Xi'an Jiaotong University , Xi'an 710049 , China
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21
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Syed N, Zavabeti A, Ou JZ, Mohiuddin M, Pillai N, Carey BJ, Zhang BY, Datta RS, Jannat A, Haque F, Messalea KA, Xu C, Russo SP, McConville CF, Daeneke T, Kalantar-Zadeh K. Printing two-dimensional gallium phosphate out of liquid metal. Nat Commun 2018; 9:3618. [PMID: 30190463 PMCID: PMC6127148 DOI: 10.1038/s41467-018-06124-1] [Citation(s) in RCA: 79] [Impact Index Per Article: 13.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/03/2018] [Accepted: 08/20/2018] [Indexed: 12/29/2022] Open
Abstract
Two-dimensional piezotronics will benefit from the emergence of new crystals featuring high piezoelectric coefficients. Gallium phosphate (GaPO4) is an archetypal piezoelectric material, which does not naturally crystallise in a stratified structure and hence cannot be exfoliated using conventional methods. Here, we report a low-temperature liquid metal-based two-dimensional printing and synthesis strategy to achieve this goal. We exfoliate and surface print the interfacial oxide layer of liquid gallium, followed by a vapour phase reaction. The method offers access to large-area, wide bandgap two-dimensional (2D) GaPO4 nanosheets of unit cell thickness, while featuring lateral dimensions reaching centimetres. The unit cell thick nanosheets present a large effective out-of-plane piezoelectric coefficient of 7.5 ± 0.8 pm V-1. The developed printing process is also suitable for the synthesis of free standing GaPO4 nanosheets. The low temperature synthesis method is compatible with a variety of electronic device fabrication procedures, providing a route for the development of future 2D piezoelectric materials.
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Affiliation(s)
- Nitu Syed
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Ali Zavabeti
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Jian Zhen Ou
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Md Mohiuddin
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Naresh Pillai
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Benjamin J Carey
- Institute of Physics and Center for Nanotechnology, University of Münster, Münster, 48149, Germany
| | - Bao Yue Zhang
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Robi S Datta
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Azmira Jannat
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Farjana Haque
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Kibret A Messalea
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Chenglong Xu
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia
| | - Salvy P Russo
- Chemical and Quantum Physics Group, ARC Centre of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, VIC, 3001, Australia
| | | | - Torben Daeneke
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia.
| | - Kourosh Kalantar-Zadeh
- School of Engineering, RMIT University, Melbourne, VIC, 3001, Australia. .,School of Chemical Engineering, University of New South Wales, Kensington, NSW, 2033, Australia.
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