Ultrathin Piezotronic Transistors with 2 nm Channel Lengths

Origin and Mechanism of Piezoelectric and Photovoltaic Effects in (111) Polar Orientated NiO Films

Based on the current piezoelectric theory, NiO with the centrosymmetric structure is not piezoelectric. However, herein, this study shows the first observation of piezoelectric generation, rectifyingand bulk photovoltaic behaviors in NiO films with [111] orientation and the change in NiO crystal structure in piezoelectric process. The piezoelectric generation, rectifying, and bulk photovoltaic performances are enhanced by increasing (111) orientation, and attenuated and eliminated by applying a persistent stress on the NiO film. The NiO [111] is polar direction, and thus a spontaneous electric field (ES ) is in the NiO film with [111] orientation. The existence of Es in (111) oriented NiO film is found to be the physical basis of the piezoelectric generators and photovoltaic and rectifying effects. Thus, NiO piezoelectric, rectifying, and bulk photovoltaic mechanism are presented at the atomic level. The mechanism may rewrite the current piezoelectric theory, and establish a unified theory of polar structure with wide implications. The polar-orientated films can be used to fabricate piezoelectric generators and other optoelectronic devices with high performances.

Emerging 2D Metal Oxides: From Synthesis to Device Integration

2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.

A Review of Ultrathin Piezoelectric Films

Due to their high electromechanical coupling and energy density properties, ultrathin piezoelectric films have recently been intensively studied as key materials for the construction of miniaturized energy transducers, and in this paper we summarize the research progress. At the nanoscale, even a few atomic layers, ultrathin piezoelectric films have prominent shape anisotropic polarization, that is, in-plane polarization and out-of-plane polarization. In this review, we first introduce the in-plane and out-of-plane polarization mechanism, and then summarize the main ultrathin piezoelectric films studied at present. Secondly, we take perovskite, transition metal dichalcogenides, and Janus layers as examples to elaborate the existing scientific and engineering problems in the research of polarization, and their possible solutions. Finally, the application prospect of ultrathin piezoelectric films in miniaturized energy converters is summarized.

In Situ Quantification of Strain-Induced Piezoelectric Potential of Dynamically Bending ZnO Microwires

The piezoelectric properties of semiconductor micro/nanowires (M/NWs) are crucial for optimizing semiconductors' electronic structure and carrier dynamics. However, the dynamic characterization of the piezoelectric properties of M/NWs remains challenging. Here, a Kelvin probe force microscopy technique based on a dual-probe atomic force microscope is developed to achieve in situ piezoelectric potential measurements of dynamic bending MWs. This technique can not only characterize the surface potential on different crystal faces of ZnO MWs in a natural state through controllable axial rotation, but also investigate the piezoelectric potential of the dynamically bending flake-like ZnO MW at different points and under different strain loads. The results show that the surface potentials of different faces/positions of the ZnO MWs are varied significantly, and determine that the quasi-static conditions piezo-strain factor of the flake-like ZnO MW is 0.28 V/%, while the factor was 0.14 V/% under low-frequency (⩽5 Hz) sinusoidal strain loading. This work provides a significant methodology to further study piezoelectric materials, and it aims to facilitate their applications in piezoelectric devices and systems.

Fundamentals and Applications of ZnO-Nanowire-Based Piezotronics and Piezo-Phototronics

The piezotronic effect is a coupling effect of semiconductor and piezoelectric properties. The piezoelectric potential is used to adjust the p-n junction barrier width and Schottky barrier height to control carrier transportation. At present, it has been applied in the fields of sensors, human-machine interaction, and active flexible electronic devices. The piezo-phototronic effect is a three-field coupling effect of semiconductor, photoexcitation, and piezoelectric properties. The piezoelectric potential generated by the applied strain in the piezoelectric semiconductor controls the generation, transport, separation, and recombination of carriers at the metal-semiconductor contact or p-n junction interface, thereby improving optoelectronic devices performance, such as photodetectors, solar cells, and light-emitting diodes (LED). Since then, the piezotronics and piezo-phototronic effects have attracted vast research interest due to their ability to remarkably enhance the performance of electronic and optoelectronic devices. Meanwhile, ZnO has become an ideal material for studying the piezotronic and piezo-phototronic effects due to its simple preparation process and better biocompatibility. In this review, first, the preparation methods and structural characteristics of ZnO nanowires (NWs) with different doping types were summarized. Then, the theoretical basis of the piezotronic effect and its application in the fields of sensors, biochemistry, energy harvesting, and logic operations (based on piezoelectric transistors) were reviewed. Next, the piezo-phototronic effect in the performance of photodetectors, solar cells, and LEDs was also summarized and analyzed. In addition, modulation of the piezotronic and piezo-phototronic effects was compared and summarized for different materials, structural designs, performance characteristics, and working mechanisms' analysis. This comprehensive review provides fundamental theoretical and applied guidance for future research directions in piezotronics and piezo-phototronics for optoelectronic devices and energy harvesting.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

Synthesis of Atomically Thin h-BN Layers Using BCl3 and NH3 by Sequential-Pulsed Chemical Vapor Deposition on Cu Foil

The chemical vapor deposition of hexagonal boron nitride layers from BCl₃ and NH₃ is highly beneficial for scalable synthesis with high controllability, yet multiple challenges such as corrosive reaction or by-product formation have hindered its successful demonstration. Here, we report the synthesis of polycrystalline hexagonal boron nitride (h-BN) layers on copper foil using BCl₃ and NH₃. The sequential pulse injection of precursors leads to the formation of atomically thin h-BN layers with a polycrystalline structure. The relationship between growth temperature and crystallinity of the h-BN film is investigated using transmission electron microscopy and Raman spectroscopy. Investigation on the initial growth mode achieved by the suppression of precursor supply revealed the formation of triangular domains and existence of preferred crystal orientations. The possible growth mechanism of h-BN in this sequential-pulsed CVD is discussed.

Thickness-Dependent Piezoelectric Property from Quasi-Two-Dimensional Zinc Oxide Nanosheets with Unit Cell Resolution

A quantitative understanding of the nanoscale piezoelectric property will unlock many application potentials of the electromechanical coupling phenomenon under quantum confinement. In this work, we present an atomic force microscopy- (AFM-) based approach to the quantification of the nanometer-scale piezoelectric property from single-crystalline zinc oxide nanosheets (NSs) with thicknesses ranging from 1 to 4 nm. By identifying the appropriate driving potential, we minimized the influences from electrostatic interactions and tip-sample coupling, and extrapolated the thickness-dependent piezoelectric coefficient (d ₃₃). By averaging the measured d ₃₃ from NSs with the same number of unit cells in thickness, an intriguing tri-unit-cell relationship was observed. From NSs with 3n unit cell thickness (n = 1, 2, 3), a bulk-like d ₃₃ at a value of ~9 pm/V was obtained, whereas NSs with other thickness showed a ~30% higher d ₃₃ of ~12 pm/V. Quantification of d ₃₃ as a function of ZnO unit cell numbers offers a new experimental discovery toward nanoscale piezoelectricity from nonlayered materials that are piezoelectric in bulk.

Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices

Piezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readily built-in amplification and ability for multiplexing, which are essential for wearables, medical devices, and robotics. This paper reviews recent progress in active piezoelectric devices. We classify these piezoelectric devices according to the material dimensionality and present physics-based device models to describe and quantify the piezoelectric response for one-dimensional nanowires, emerging two-dimensional materials, and three-dimensional thin films. Different transduction mechanisms and state-of-the-art devices for each type of material are reviewed. Perspectives on the future applications of active piezoelectric devices are discussed.

Enhanced Piezoresistive Behavior of SiC Nanowire by Coupling with Piezoelectric Effect

Improving the sensitivity of the piezoresistive behavior of semiconductor nanostructures is critically important because it is one of the keys to explore advanced pressure sensors with desired sensitivity. Herein, we reported a strategy for improving the piezoresistive behavior of SiC nanowire by coupling with the piezoelectric effect of ZnO nanolayers, which were grown by an atomic layer deposition approach. As a result, the detected current of the as-constructed ZnO/SiC heterojunction nanowires is 6 times more than SiC nanowires, suggesting its substantially improved sensitivity. Moreover, the measured ΔR/R₀ value and gauge factor (GF) of the ZnO/SiC heterojunction nanowires could be up to 0.82 and 50.93, respectively, which was profoundly higher than those of the SiC counterpart and most of reported positive piezoresistive SiC sensors.

Peculiar piezoelectricity of atomically thin planar structures

The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.

Unprecedented efficient electron transport across Au nanoparticles with up to 25-nm insulating SiO2-shells

Quantum tunneling is the basis of molecular electronics, but often its electron transport range is too short to overcome technical defects caused by downscaling of electronic devices, which limits the development of molecular-/nano-electronics. Marrying electronics with plasmonics may well present a revolutionary way to meet this challenge as it can manipulate electron flow with plasmonics at the nanoscale. Here we report on unusually efficient temperature-independent electron transport, with some photoconductivity, across a new type of junction with active plasmonics. The junction is made by assembly of SiO₂ shell-insulated Au nanoparticles (Au@SiO₂ NPs) into dense nanomembranes of a few Au@SiO₂ layers thick and transport is measured across these membranes. We propose that the mechanism is plasmon-enabled transport, possibly tunneling (as it is temperature-independent). Unprecedentedly ultra-long-range transport across one, up to even three layers of Au@SiO₂ in the junction, with a cumulative insulating (silica) gap up to 29 nm/NP layer was achieved, well beyond the measurable limit for normal quantum mechanical tunneling across insulators (~2.5 nm at 0.5–1 V). This finding opens up a new interdisciplinary field of exploration in nanoelectronics with wide potential impact on such areas as electronic information transfer.

Piezotronic Tunneling Junction Gated by Mechanical Stimuli

Tunneling junction is used in many devices such as high-frequency oscillators, nonvolatile memories, and magnetic field sensors. In these devices, modulation on the barrier width and/or height is usually realized by electric field or magnetic field. Here, a new piezotronic tunneling junction (PTJ) principle, in which the quantum tunneling is controlled/tuned by externally applied mechanical stimuli, is proposed. In these metal/insulator/piezoelectric semiconductor PTJs, such as Pt/Al₂ O₃ /p-GaN, the height and the width of the tunneling barriers can be mechanically modulated via the piezotronic effect. The tunneling current characteristics of PTJs exhibit critical behavior as a function of external mechanical stimuli, which results in high sensitivity (≈5.59 mV MPa^-1 ), giant switching (>10⁵ ), and fast response (≈4.38 ms). Moreover, the mechanical controlling of tunneling transport in PTJs with various thickness of Al₂ O₃ is systematically investigated. The high performance observed with these metal/insulator/piezoelectric semiconductor PTJs suggest their great potential in electromechanical technology. This study not only demonstrates dynamic mechanical controlling of quantum tunneling, but also paves a way for adaptive interaction between quantum tunneling and mechanical stimuli, with potential applications in the field of ultrasensitive press sensor, human-machine interface, and artificial intelligence.

Piezotronics and Piezo-phototronics of Third Generation Semiconductor Nanowires

With the fast development of nanoscience and nanotechnology in the last 30 years, semiconductor nanowires have been widely investigated in the areas of both electronics and optoelectronics. Among them, representatives of third generation semiconductors, such as ZnO and GaN, have relatively large spontaneous polarization along their longitudinal direction of the nanowires due to the asymmetric structure in their c-axis direction. Two-way or multiway couplings of piezoelectric, photoexcitation, and semiconductor properties have generated new research areas, such as piezotronics and piezo-phototronics. In this review, an in-depth discussion of the mechanisms and applications of nanowire-based piezotronics and piezo-phototronics is presented. Research on piezotronics and piezo-phototronics has drawn much attention since the effective manipulation of carrier transport, photoelectric properties, etc. through the application of simple mechanical stimuli and, conversely, since the design of new strain sensors based on the strain-induced change in semiconductor properties.

Crystal-Orientation-Related Dynamic Tuning of the Lasing Spectra of CdS Nanobelts by Piezoelectric Polarization

Realizing dynamic wavelength tunability could bring about tremendous impacts in laser technology, pressure nanosensing, and lab-on-a-chip devices. Here, we demonstrate an original strategy to operate the lasing mode shift through reversible length changes of a CdS nanobelt, which is determined by the direction of piezoelectric polarization. The relationships between the direction of applied strain, the lasing mode shift, and the tunable effective refractive index are elaborated in detail. The correlation between the piezoelectric polarization-induced lasing mode red shift and the blue shift in the wavelength of the lasing mode output caused by the Poisson effect is discussed in depth, as well. Our study comprehensively considers the influence of both the cavity size variations and refractive index changes on the control of the lasing mode and provides a deeper understanding of the strain-induced lasing mode shift.

Large Piezoelectric Strain in Sub-10 Nanometer Two-Dimensional Polyvinylidene Fluoride Nanoflakes

Functional polymers such as polyvinylidene fluoride (PVDF) and its copolymers, which exhibit room-temperature piezoelectricity and ferroelectricity in two-dimensional (2D) limit, are promising candidates to substitute hazardous lead-based piezoceramics for flexible nanoelectronic and electromechanical energy-harvesting applications. However, realization of many polymers including PVDF in ultrathin 2D nanostructures with desired crystal phases and tunable properties remains challenging due to ineffective conventional synthesis methods. Consequently, it has remained elusive to obtain optimized piezoelectric performance of PVDF particularly in sub-10 nm regimes. Taking advantage of its high flexibility and easy processing, we fabricate ultrathin PVDF nanoflakes with thicknesses down to 7 nm by using a hot-pressing method. This thermo-mechanical strategy simultaneously induces robust thermodynamic α to electroactive β-phase transformation, with β fraction as high as 92.8% in sub-10 nm flakes. Subsequently, piezoelectric studies performed by using piezoresponse force microscopy reveal an excellent piezoelectric strain of 0.7% in 7 nm film and the highest piezoelectric coefficient ( d₃₃) achieved is -68 pm/V for 50 nm-thick nanoflakes, which is 13% higher than the piezoresponse from 50 nm-thick PZT nanofilms. Our results further suggest thickness modulation as an effective strategy to tune the piezoelectric performance of PVDF and affirm its supremacy over conventional piezoceramics especially at nanoscale. This work aims not only to help understand fundamental piezoelectricity of pure PVDF in sub-10 nm regimes but also provides an opportunity to realize other polymer-based 2D nanocrystals.

Effect of TC(002) on the Output Current of a ZnO Thin-Film Nanogenerator and a New Piezoelectricity Mechanism at the Atomic Level

Understanding the piezoelectricity mechanism is crucial for developing new materials for better performance. Here, we developed a nanogenerator based on the ZnO thin films having various TC(002) values. The output current well correlated to the magnitude of (002) texture coefficient (TC(002)). Additionally, the TC(002)-dependent photovoltaic and rectification properties are observed. When the film is subjected to persistent compression, the photovoltaic, rectification, and piezoelectric properties fade away. Based on our observation that the ZnO polar structure always shows a spontaneous electron field (SEF), we thus propose a new piezoelectricity mechanism. The [001]-orientated ZnO thin film with the SEF is equivalent to a capacitor, the compression functions as a discharging process, and the removal of the external stress serves as a charging process. The physical mechanism provides an insight into various energy conversion processes that will inspire advanced designs of high-performance nanogenerators, solar cells, and other optoelectronic devices.

Printing two-dimensional gallium phosphate out of liquid metal

Two-dimensional piezotronics will benefit from the emergence of new crystals featuring high piezoelectric coefficients. Gallium phosphate (GaPO₄) is an archetypal piezoelectric material, which does not naturally crystallise in a stratified structure and hence cannot be exfoliated using conventional methods. Here, we report a low-temperature liquid metal-based two-dimensional printing and synthesis strategy to achieve this goal. We exfoliate and surface print the interfacial oxide layer of liquid gallium, followed by a vapour phase reaction. The method offers access to large-area, wide bandgap two-dimensional (2D) GaPO₄ nanosheets of unit cell thickness, while featuring lateral dimensions reaching centimetres. The unit cell thick nanosheets present a large effective out-of-plane piezoelectric coefficient of 7.5 ± 0.8 pm V^-1. The developed printing process is also suitable for the synthesis of free standing GaPO₄ nanosheets. The low temperature synthesis method is compatible with a variety of electronic device fabrication procedures, providing a route for the development of future 2D piezoelectric materials.