Orbital Ordering of the Mobile and Localized Electrons at Oxygen-Deficient LaAlO3/SrTiO3 Interfaces

Organic Passivation-Enhanced Ferroelectricity in Perovskite Oxide Films

Perovskite oxides and organic-inorganic halide perovskite materials, with numerous fascinating features, have been subjected to extensive studies. Most of the properties of perovskite materials are dependence on their ferroelectricity that denoted by remanent polarization (Pr). Thus, the increase of Pr in perovskite films is mainly an effort in material physics. At present, commonplace improvement schemes, i.e., controlling material crystallinity, and post-annealing by using a high-temperature process, are normally used. However, a simpler and temporal strategy for Pr improvement is always unavailable to perovskite material researchers. In this study, an organic coating layer, low-temperature, and vacuum-free strategy is proposed to improve the Pr, directly increasing the Pr from 36 to 56 µC cm-2. Further study finds that the increased Pr originates from the suppression of the oxygen defects and Ti defects. This organic coating layer strategy for passivating the defects may open a new way for the preparation of higher-performance and cost-effective perovskite products, further improving its prospective for application in the electron devices field.

Origin of Interfacial Orbital Reconstruction in Perovskite Superlattices

The competition between on-site electronic correlation and local crystal field stands out as a captivating topic in research. However, its physical ramifications often get overshadowed by influences of strong periodic potential and orbital hybridization. The present study reveals this competition may become more pronounced or even dominant in two-dimensional systems, driven by the combined effects of dimensional confinement and orbital anisotropy. This leads to electronic orbital reconstruction in certain perovskite superlattices or thin films. To explore the emerging physics, we investigate the interfacial orbital disorder-order transition with an effective Hamiltonian and how to modulate this transition through strains.

Experimental Band Structure of Pb(Zr,Ti)O3 : Mechanism of Ferroelectric Stabilization

Pb(Zr,Ti)O₃ (PZT) is the most common ferroelectric (FE) material widely used in solid-state technology. Despite intense studies of PZT over decades, its intrinsic band structure, electron energy depending on 3D momentum k, is still unknown. Here, Pb(Zr_0.2 Ti_0.8 )O₃ using soft-X-ray angle-resolved photoelectron spectroscopy (ARPES) is explored. The enhanced photoelectron escape depth in this photon energy range allows sharp intrinsic definition of the out-of-plane momentum k and thereby of the full 3D band structure. Furthermore, the problem of sample charging due to the inherently insulating nature of PZT is solved by using thin-film PZT samples, where a thickness-induced self-doping results in their heavy doping. For the first time, the soft-X-ray ARPES experiments deliver the intrinsic 3D band structure of PZT as well as the FE-polarization dependent electrostatic potential profile across the PZT film deposited on SrTiO₃ and La_x SrMn_{1- x} O₃ substrates. The negative charges near the surface, required to stabilize the FE state pointing away from the sample (P+), are identified as oxygen vacancies creating localized in-gap states below the Fermi energy. For the opposite polarization state (P-), the positive charges near the surface are identified as cation vacancies resulting from non-ideal stoichiometry of the PZT film as deduced from quantitative XPS measurements.

Neural-network-backed evolutionary search for SrTiO3(110) surface reconstructions

The determination of atomic structures in surface reconstructions has typically relied on structural models derived from intuition and domain knowledge. Evolutionary algorithms have emerged as powerful tools for such structure searches. However, when density functional theory is used to evaluate the energy the computational cost of a thorough exploration of the potential energy landscape is prohibitive. Here, we drive the exploration of the rich phase diagram of TiO_x overlayer structures on SrTiO₃(110) by combining the covariance matrix adaptation evolution strategy (CMA-ES) and a neural-network force field (NNFF) as a surrogate energy model. By training solely on SrTiO₃(110) 4×1 overlayer structures and performing CMA-ES runs on 3×1, 4×1 and 5×1 overlayers, we verify the transferability of the NNFF. The speedup due to the surrogate model allows taking advantage of the stochastic nature of the CMA-ES to perform exhaustive sets of explorations and identify both known and new low-energy reconstructions.

The covariance matrix adaptation evolution strategy (CMA-ES) and a fully automatically differentiable, transferable neural-network force field are combined to explore TiO_x overlayer structures on SrTiO₃(110) 3×1, 4×1 and 5×1 surfaces.

Band-Order Anomaly at the γ-Al2O3/SrTiO3 Interface Drives the Electron-Mobility Boost

The rich functionalities of transition-metal oxides and their interfaces bear an enormous technological potential. Its realization in practical devices requires, however, a significant improvement of yet relatively low electron mobility in oxide materials. Recently, a mobility boost of about 2 orders of magnitude has been demonstrated at the spinel-perovskite γ-Al₂O₃/SrTiO₃ interface compared to the paradigm perovskite-perovskite LaAlO₃/SrTiO₃ interface. We explore the fundamental physics behind this phenomenon from direct measurements of the momentum-resolved electronic structure of this interface using resonant soft-X-ray angle-resolved photoemission. We find an anomaly in orbital ordering of the mobile electrons in γ-Al₂O₃/SrTiO₃ which depopulates electron states in the top SrTiO₃ layer. This rearrangement of the mobile electron system pushes the electron density away from the interface, which reduces its overlap with the interfacial defects and weakens the electron-phonon interaction, both effects contributing to the mobility boost. A crystal-field analysis shows that the band order alters owing to the symmetry breaking between the spinel γ-Al₂O₃ and perovskite SrTiO₃. Band-order engineering, exploiting the fundamental symmetry properties, emerges as another route to boost the performance of oxide devices.