Oxidation of Suspended Graphene: Etch Dynamics and Stability Beyond 1000 °C

Effect of Surface Oxidation and Crystal Thickness on the Magnetic Properties and Magnetic Domain Structures of Cr2Ge2Te6

van der Waals (vdW) magnetic materials, such as Cr2Ge2Te6 (CGT), show promise for memory and logic applications. This is due to their broadly tunable magnetic properties and the presence of topological magnetic features such as skyrmionic bubbles. A systematic study of thickness and oxidation effects on magnetic domain structures is important for designing devices and vdW heterostructures for practical applications. Here, we investigate thickness effects on magnetic properties, magnetic domains, and bubbles in oxidation-controlled CGT crystals. We find that CGT exposed to ambient conditions for 5 days forms an oxide layer approximately 5 nm thick. This oxidation leads to a significant increase in the oxidation state of the Cr ions, indicating a change in local magnetic properties. This is supported by real-space magnetic texture imaging through Lorentz transmission electron microscopy. By comparing the thickness-dependent saturation field of oxidized and pristine crystals, we find that oxidation leads to a nonmagnetic surface layer that is thicker than the oxide layer alone. We also find that the stripe domain width and skyrmionic bubble size are strongly affected by the crystal thickness in pristine crystals. These findings underscore the impact of thickness and surface oxidation on the properties of CGT, such as saturation field and domain/skyrmionic bubble size, and suggest a pathway for manipulating magnetic properties through a controlled oxidation process.

Control of structure and spin texture in the van der Waals layered magnet CrSBr

Controlling magnetism at nanometer length scales is essential for realizing high-performance spintronic, magneto-electric and topological devices and creating on-demand spin Hamiltonians probing fundamental concepts in physics. Van der Waals (vdW)-bonded layered magnets offer exceptional opportunities for such spin texture engineering. Here, we demonstrate nanoscale structural control in the layered magnet CrSBr with the potential to create spin patterns without the environmental sensitivity that has hindered such manipulations in other vdW magnets. We drive a local phase transformation using an electron beam that moves atoms and exchanges bond directions, effectively creating regions that have vertical vdW layers embedded within the initial horizontally vdW bonded exfoliated flakes. We calculate that the newly formed two-dimensional structure is ferromagnetically ordered in-plane with an energy gap in the visible spectrum, and weak antiferromagnetism between the planes, suggesting possibilities for creating spin textures and quantum magnetic phases.

Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces

Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with in-situ electron diffraction and photoemission, plus ex-situ atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides an alternative route towards tuning the growth and properties of 3D epitaxial films and membranes on 2D material masks.

Remote epitaxy represents a promising method for the synthesis of thin films on lattice-mismatched substrates, but its atomic-scale mechanisms are still unclear. Here, the authors demonstrate the growth of exfoliatable GaSb films on graphene-terminated GaSb (001) via seeded lateral epitaxy, showing that pinhole defects in graphene serve as selective nucleation sites.

Self-assembled graphene-based microfibers with eclectic optical properties

The construction of graphene-based microfibers with reinforced mechanical and electrical properties has been the subject of numerous researches in recent years. However, the fabrication of graphene-based fibers with remarkable optical features still remains a challenge and has not been addressed so far. This paper aims to report a series of flexible self-assembled fibers, synthesized through a few-minute sonication of thermally oxidized graphene oxide nanosheets, so-called Nanoporous Over-Oxidized Graphene (NOG), in an acidic medium. These free-standing glassy fibers were classified into four distinct morphological structures and displayed a collection of intriguing optical properties comprising high transparency, strong birefringence, fixed body colorations (e.g. colorless, blue, green, and red), tunable interference marginal colorations, UV-visible-near IR fluorescence, and upconversion emissions. Moreover, they exhibited high chemical stability in strongly acidic, basic, and oxidizing media. The foregoing notable attributes introduce the NOG fiber as a promising candidate both for the construction of graphene-based photoluminescent textiles and the development of a wide variety of optical applications.

Selective Etching of Graphene Membrane Nanopores: From Molecular Sieving to Extreme Permeance

Two-dimensional materials are the essential building blocks of breakthrough membrane technologies due to minimal permeation barriers across atomically thin pores. Tunable pore size fabrication combined with independently controlled pore number density is necessary for outstanding performance but remains a challenge. There is a great need for parallel, upscalable methods that can control pore size from sub-nm to >5 nm, a pore size range required for membranes with effective molecular separation. Here we report a dry, facile, and scalable process introducing atomic defects by design, followed by selective etching of graphene edge atoms able to controllably expand the nanopore dimensions from sub-nm to 5 nm. The attainable average pore sizes at 10¹⁵ m^-2 pore density promise applicability to various separation applications. We investigate the gas permeation and separation mechanisms, finding that these membranes display molecular sieving (H₂/CH₄ separation factor = 9.3; H₂ permeance = 3370 gas permeation units (GPU)) and reveal the presence of interweaved transport phenomena of pore chemistry, surface flow, and gas molecule momentum transfer. We observe the smooth transition from molecular sieving to effusion at unprecedented permeance (H₂/CH₄ separation factor = 3.7; H₂ permeance = 10⁷ GPU). Our scalable graphene membrane fabrication approach in combination with sub-5 nm pores opens a new route employing 2D membranes to study gas transport and effectively paving the way to industrial applications.