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Zhang Y, Shen Y, Liu J, Lv L, Zhou M, Yang X, Meng X, Zhang B, Zhou Z. Symmetry-breaking-induced ferroelectric HfSnX 3 monolayers and their tunable Janus structures: promising candidates for photocatalysts and nanoelectronics. Phys Chem Chem Phys 2023; 25:22889-22899. [PMID: 37589090 DOI: 10.1039/d3cp02844e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/18/2023]
Abstract
Designing novel two-dimensional (2D) ferroelectric materials by symmetry breaking and studying their mechanisms play important roles in the discovery of new ferroelectric photocatalysts and nanoelectronics. In this study, we have systematically investigated a series of novel ferroelectric 2D HfSnX3 (X = S, Se and Te) monolayers through first-principles calculations. We found that each HfSnX3 monolayer contains a stable ferroelectric phase (FP) and a paraelectric phase (PP). The large polarization (up to 1.64 μC cm-2) in the FP can significantly bend the oxidation reduction potential of water, making HfSnX3 monolayers become excellent ferroelectric photocatalysts. Specifically, by designing a Janus structure to break the symmetry of the PP, we have excitingly obtained a stable Hf2GeSnSe6 (referred to as HGSS) monolayer with triple polarized states. HGSS not only possesses great visible light absorption properties (about 3 × 105 cm-1) as photocatalysts but also successfully solves the dead layer problem previously reported in practical applications. In addition, by constructing a heterostructure with graphene, HGSS has great application in the design of controllable ultrathin p-n junctions. Overall, our study not only predicts a series of potential ferroelectric photocatalytic materials, but also provides valuable insights for designing tunable polarized materials and nanoelectronics.
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Affiliation(s)
- Yu Zhang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Yanqing Shen
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
- Heilongjiang Provincial Key Laboratory of Plasma Physics and Application Technology, Harbin Institute of Technology, Harbin 150001, P. R. China
| | - Jiajia Liu
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Lingling Lv
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Min Zhou
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Xin Yang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Xianghui Meng
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Bing Zhang
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
| | - Zhongxiang Zhou
- School of Physics, Harbin Institute of Technology, Harbin, 150001, P. R. China.
- Heilongjiang Provincial Key Laboratory of Plasma Physics and Application Technology, Harbin Institute of Technology, Harbin 150001, P. R. China
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Rong R, Liu Y, Nie X, Zhang W, Zhang Z, Liu Y, Guo W. The Interaction of 2D Materials With Circularly Polarized Light. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206191. [PMID: 36698292 PMCID: PMC10074140 DOI: 10.1002/advs.202206191] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.
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Affiliation(s)
- Rong Rong
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
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Generating intense electric fields in 2D materials by dual ionic gating. Nat Commun 2022; 13:6601. [PMID: 36329011 PMCID: PMC9633598 DOI: 10.1038/s41467-022-34158-z] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Accepted: 10/14/2022] [Indexed: 11/06/2022] Open
Abstract
The application of an electric field through two-dimensional materials (2DMs) modifies their properties. For example, a bandgap opens in semimetallic bilayer graphene while the bandgap shrinks in few-layer 2D semiconductors. The maximum electric field strength achievable in conventional devices is limited to ≤0.3 V/nm by the dielectric breakdown of gate dielectrics. Here, we overcome this limit by suspending a 2DM between two volumes of ionic liquid (IL) with independently controlled potentials. The potential difference between the ILs falls across an ultrathin layer consisting of the 2DM and the electrical double layers above and below it, producing an intense electric field larger than 4 V/nm. This field is strong enough to close the bandgap of few-layer WSe2, thereby driving a semiconductor-to-metal transition. The ability to apply fields an order of magnitude higher than what is possible in dielectric-gated devices grants access to previously-inaccessible phenomena occurring in intense electric fields. The application of electric fields >1 V/nm in solid state devices could provide access to unexplored phenomena, but it is currently difficult to implement. Here, the authors develop a double-sided ionic liquid gating technique to generate electric fields as large as 4 V/nm across few-layer WSe2, leading to field-induced semiconductor-to-metal transitions.
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Direct probing of phonon mode specific electron-phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides. Nat Commun 2021; 12:4520. [PMID: 34312387 PMCID: PMC8313722 DOI: 10.1038/s41467-021-24875-2] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/15/2021] [Accepted: 07/13/2021] [Indexed: 11/18/2022] Open
Abstract
Electron–phonon scatterings in solid-state systems are pivotal processes in determining many key physical quantities such as charge carrier mobilities and thermal conductivities. Here, we report direct probing of phonon mode specific electron–phonon scatterings in layered semiconducting transition metal dichalcogenides WSe2, MoSe2, WS2, and MoS2 through inelastic electron tunneling spectroscopy measurements, quantum transport simulations, and density functional calculation. We experimentally and theoretically characterize momentum-conserving single- and two-phonon electron–phonon scatterings involving up to as many as eight individual phonon modes in mono- and bilayer films, among which transverse, longitudinal acoustic and optical, and flexural optical phonons play significant roles in quantum charge flows. Moreover, the layer-number sensitive higher-order inelastic electron–phonon scatterings, which are confirmed to be generic in all four semiconducting layers, can be attributed to differing electronic structures, symmetry, and quantum interference effects during the scattering processes in the ultrathin semiconducting films. Electron–phonon scattering events in solid-state systems determine key physical quantities. Here, the authors probe momentum-conserving single- and two-phonon electron–phonon scattering events involving up to as many as eight individual phonon modes in 2D semiconductors.
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Wang Y, Wei W, Li F, Lv X, Huang B, Dai Y. Valley polarization caused by crystalline symmetry breaking. MATERIALS HORIZONS 2021; 8:244-249. [PMID: 34874021 DOI: 10.1039/d0mh01441a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In two-dimensional (2D) hexagonal lattices with inversion asymmetry, time-reversal (T) connected valleys are at the center of current valleytronic research. In order to trigger valley polarization, dynamical processes and/or magnetism have been considered. In this work, we propose a new mechanism, valley-contrasting sublattice polarization (VCSP), to polarize valleys by reducing the crystalline symmetry that connects the valleys. In our mechanism, significant valley polarization could be readily generated without magnetism, an electric field, or an optical process. Based on tight-binding model analysis and first-principle calculations, the control of valley polarization via crystalline symmetry can be successfully realized in concrete LaOBiS2 polytypes with Peierls-like structure distortion. Our results provide an unprecedented possibility for exploring valley-contrasting physics.
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Affiliation(s)
- Yuanyuan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Wei Wei
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Fengping Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Xingshuai Lv
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Baibiao Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
| | - Ying Dai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
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Li Z, Xu B, Liang D, Pan A. Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials. RESEARCH (WASHINGTON, D.C.) 2020; 2020:5464258. [PMID: 33029588 PMCID: PMC7521027 DOI: 10.34133/2020/5464258] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 07/26/2020] [Indexed: 01/12/2023]
Abstract
The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.
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Affiliation(s)
- Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Boyi Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
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