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Tien NT, Dang NH, Bich Thao PT, Vo KD, Hoat DM, Nguyen DK. Adsorption effects of acetone and acetonitrile on defected penta-PdSe 2 nanoribbons: a DFT study. RSC Adv 2024; 14:16445-16458. [PMID: 38774611 PMCID: PMC11106654 DOI: 10.1039/d4ra02368d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Accepted: 05/15/2024] [Indexed: 05/24/2024] Open
Abstract
Using DFT calculations, the structural and electronic properties of the ZZ7 p-PdSe2 nanoribbons (ZZ7) with the four kinds of vacancy defects, including ZZ7-VPd, ZZ7-VSe, ZZ7-VPd+Se, and ZZ7-V2Se are studied, in which their stability, diverse geometries, and altered electronic properties are determined through the formation energies, optimal structural parameters, electronic band structures, and DOSs. Specifically, the formation energies of all studied systems show significant negative values around -3.9 eV, evidencing their good thermal stability. The geometries of four defective structures exhibit different diversification, whereas only the ZZ7-V2Se structure possesses the highly enhanced feature, identified as the most effective substrate for the acetone and acetonitrile adsorption. On the electronic behaviors, the ZZ7 band structure displays the nonmagnetic metallic characteristics that become the ferromagnetic half-metallic band structures for the ZZ7-VPd and ZZ7-VSe and the ferromagnetic semi-metallic band structures for the ZZ7-VPd+Se and ZZ7-V2Se. For adsorption of the acetone and acetonitrile on the ZZ7-V2Se structure, the energetic stability, adsorption sites, adsorption distances, charge transfers, and electronic characteristics of the adsorbed systems are determined by the adsorption energies, optimal adsorption sites, adsorption distances, Mulliken populations, and DOSs. The adsorption energies of the acetone- and acetonitrile-adsorbed ZZ7-V2Se systems display significant values at -1.2 eV and -0.86 eV at the preferable sites of 8 and 11, respectively, indicating their great adsorption ability. The adsorption mechanism of the acetone- and acetonitrile-adsorbed systems belongs to the physisorption owing to absence of chemical bonds, in which the bond lengths of the ZZ7-V2Se substrate show a very small deviation. Under the acetone and acetonitrile adsorptions, the ferromagnetic semi-metallic DOSs of the ZZ7-V2Se become the ferromagnetic half-metallic DOSs for the ZZ7-V2Se-acetone-8 and the ferromagnetic semiconducting DOSs for the ZZ7-V2Se-acetonitrile-11. Our systematic results can provide a complete understanding of the acetone- and acetonitrile adsorptions on the potential ZZ7-V2Se structure, which is very useful for nanosensor application.
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Affiliation(s)
- Nguyen Thanh Tien
- College of Natural Sciences, Can Tho University 3-2 Road Can Tho City 900000 Vietnam
| | - Nguyen Hai Dang
- College of Natural Sciences, Can Tho University 3-2 Road Can Tho City 900000 Vietnam
| | - Pham Thi Bich Thao
- College of Natural Sciences, Can Tho University 3-2 Road Can Tho City 900000 Vietnam
| | - K Dien Vo
- Division of Applied Physics, Dong Nai Technology University Bien Hoa City Vietnam
- Faculty of Engineering, Dong Nai Technology University Bien Hoa City Vietnam
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Vietnam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Vietnam
| | - Duy Khanh Nguyen
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University Ho Chi Minh City Vietnam
- Faculty of Mechanical - Electrical and Computer Engineering, School of Technology, Van Lang University Ho Chi Minh City Vietnam
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Tien NT, Thao PTB, Dang NH, Khanh ND, Dien VK. Insights into Structural, Electronic, and Transport Properties of Pentagonal PdSe 2 Nanotubes Using First-Principles Calculations. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13111728. [PMID: 37299633 DOI: 10.3390/nano13111728] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Revised: 05/15/2023] [Accepted: 05/15/2023] [Indexed: 06/12/2023]
Abstract
One-dimensional (1D) novel pentagonal materials have gained significant attention as a new class of materials with unique properties that could influence future technologies. In this report, we studied the structural, electronic, and transport properties of 1D pentagonal PdSe2 nanotubes (p-PdSe2 NTs). The stability and electronic properties of p-PdSe2 NTs with different tube sizes and under uniaxial strain were investigated using density functional theory (DFT). The studied structures showed an indirect-to-direct bandgap transition with slight variation in the bandgap as the tube diameter increased. Specifically, (5 × 5) p-PdSe2 NT, (6 × 6) p-PdSe2 NT, (7 × 7) p-PdSe2 NT, and (8 × 8) p-PdSe2 NT are indirect bandgap semiconductors, while (9 × 9) p-PdSe2 NT exhibits a direct bandgap. In addition, under low uniaxial strain, the surveyed structures were stable and maintained the pentagonal ring structure. The structures were fragmented under tensile strain of 24%, and compression of -18% for sample (5 × 5) and -20% for sample (9 × 9). The electronic band structure and bandgap were strongly affected by uniaxial strain. The evolution of the bandgap vs. the strain was linear. The bandgap of p-PdSe2 NT experienced an indirect-direct-indirect or a direct-indirect-direct transition when axial strain was applied. A deformability effect in the current modulation was observed when the bias voltage ranged from about 1.4 to 2.0 V or from -1.2 to -2.0 V. Calculation of the field effect I-V characteristic showed that the on/off ratio was large with bias potentials from 1.5 to 2.0 V. This ratio increased when the inside of the nanotube contained a dielectric. The results of this investigation provide a better understanding of p-PdSe2 NTs, and open up potential applications in next-generation electronic devices and electromechanical sensors.
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Affiliation(s)
- Nguyen Thanh Tien
- College of Natural Sciences, Can Tho University, Can Tho 90000, Vietnam
| | | | - Nguyen Hai Dang
- College of Natural Sciences, Can Tho University, Can Tho 90000, Vietnam
- Faculty of Fundamental Science, Nam Can Tho University, Can Tho 90000, Vietnam
| | - Nguyen Duy Khanh
- High-Performance Computing Laboratory (HPC Lab), Information Technology Center, Thu Dau Mot University, Thu Dau Mot 75100, Vietnam
| | - Vo Khuong Dien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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4
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Sheglov DV, Rogilo DI, Fedina LI, Sitnikov SV, Sysoev EV, Latyshev AV. Bottom-Up Generated Height Gauges for Silicon-Based Nanometrology. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12511-12523. [PMID: 36808946 DOI: 10.1021/acsami.2c20154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Steady progress in integrated circuit design has forced basic metrology to adopt silicon lattice parameter as a secondary realization of the SI meter that lacks convenient physical gauges for precise surface measurements at a nanoscale. To employ this fundamental shift in nanoscience and nanotechnology, we propose a set of self-organized silicon surface morphologies as a gauge for height measurements within the whole nanoscale (0.3-100 nm) range. Using 2 nm sharp atomic force microscopy (AFM) probes, we have measured the roughness of wide (up to 230 μm in diameter) singular terraces and the height of monatomic steps on the step-bunched and amphitheater-like Si(111) surfaces. For both types of self-organized surface morphology, the root-mean-square terrace roughness exceeds 70 pm but has a little effect on step height measurements having 10 pm accuracy for AFM technique in air. We implement a step-free 230-μm-wide singular terrace as a reference mirror in an optical interferometer to reduce the systematic error of height measurements from >5 nm to about 0.12 nm, which allows visualizing 136-pm-high monatomic steps on the Si(001) surface. Then, using a "pit-patterned" extremely wide terrace with dense but counted monatomic steps in a pit wall, we have optically measured mean Si(111) interplanar spacing (313.8 ± 0.4 pm) that agrees well with the most precise metrological data (313.56 pm). This opens up avenues for the creation of silicon-based height gauges using bottom-up approaches and advances optical interferometry among techniques for metrology-grade nanoscale height measurements.
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Affiliation(s)
- Dmitry V Sheglov
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev aven. 13, Novosibirsk 630090, Russia
| | - Dmitry I Rogilo
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev aven. 13, Novosibirsk 630090, Russia
| | - Liudmila I Fedina
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev aven. 13, Novosibirsk 630090, Russia
| | - Sergey V Sitnikov
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev aven. 13, Novosibirsk 630090, Russia
| | - Evgeny V Sysoev
- Technological Design Institute of Scientific Instrument Engineering SB RAS, Russkaya str. 41, Novosibirsk 630058, Russia
| | - Alexander V Latyshev
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev aven. 13, Novosibirsk 630090, Russia
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Yu Z, Lv S, Yao Q, Fang N, Xu Y, Shao Q, Pao CW, Lee JF, Li G, Yang LM, Huang X. Low-Coordinated Pd Site within Amorphous Palladium Selenide for Active, Selective, and Stable H 2 O 2 Electrosynthesis. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208101. [PMID: 36427353 DOI: 10.1002/adma.202208101] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2022] [Revised: 11/14/2022] [Indexed: 06/16/2023]
Abstract
The development of high-performance catalysts with high activity, selectivity, and stability are essential for the practical applications of H2 O2 electrosynthesis technology, but it is still formidably challenging. It is reported that the low-coordinated structure of Pd sites in amorphous PdSe2 nanoparticles (a-PdSe2 NPs) can significantly boost the electrocatalytic synthesis of H2 O2 . Detailed investigations and theoretical calculations reveal that the disordered arrangement of Pd atoms in a-PdSe2 NPs can promote the activity, while the Pd sites with low-coordinated environment can optimize the adsorption toward oxygenated intermediate and suppress the cleavage of O-O bond, leading to a significant enhancement in both the H2 O2 selectivity and productivity. Impressively, a-PdSe2 NPs/C exhibits high H2 O2 selectivity over 90% in different pH electrolytes. H2 O2 productivities with ≈3245.7, 1725.5, and 2242.1 mmol gPd -1 h-1 in 0.1 m KOH, 0.1 m HClO4 , and 0.1 m Na2 SO4 can be achieved, respectively, in an H-cell electrolyzer, being a pH-universal catalyst for H2 O2 electrochemical synthesis. Furthermore, the produced H2 O2 can reach 1081.8 ppm in a three-phase flow cell reactor after 2 h enrichment in 0.1 m Na2 SO4 , showing the great potential of a-PdSe2 NPs/C for practical H2 O2 electrosynthesis.
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Affiliation(s)
- Zhiyong Yu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Shengyao Lv
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Bioinorganic Chemistry and Materia Medica, Hubei Key Laboratory of Materials Chemistry and Service Failure, Hubei Engineering Research Center for Biomaterials and Medical Protective Materials School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Key Laboratory of Theoretical Chemistry of Environment, Ministry of Education, Center for Computational Quantum Chemistry, School of Chemistry, South China Normal University, Guangzhou, 510006, China
| | - Qing Yao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Nan Fang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yong Xu
- Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage Devices, Collaborative Innovation Center of Advanced Energy Materials, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Qi Shao
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China
| | - Chih-Wen Pao
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu, 30076, Taiwan
| | - Jyh-Fu Lee
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu, 30076, Taiwan
| | - Guoliang Li
- Key Laboratory of Theoretical Chemistry of Environment, Ministry of Education, Center for Computational Quantum Chemistry, School of Chemistry, South China Normal University, Guangzhou, 510006, China
| | - Li-Ming Yang
- Key Laboratory of Material Chemistry for Energy Conversion and Storage, Ministry of Education, Hubei Key Laboratory of Bioinorganic Chemistry and Materia Medica, Hubei Key Laboratory of Materials Chemistry and Service Failure, Hubei Engineering Research Center for Biomaterials and Medical Protective Materials School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiaoqing Huang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
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Emergence of distinct electronic states in epitaxially-fused PbSe quantum dot superlattices. Nat Commun 2022; 13:6802. [DOI: 10.1038/s41467-022-33955-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 10/04/2022] [Indexed: 11/12/2022] Open
Abstract
AbstractQuantum coupling in arrayed nanostructures can produce novel mesoscale properties such as electronic minibands to improve the performance of optoelectronic devices, including ultra-efficient solar cells and infrared photodetectors. Colloidal PbSe quantum dots (QDs) that self-assemble into epitaxially-fused superlattices (epi-SLs) are predicted to exhibit such collective phenomena. Here, we show the emergence of distinct local electronic states induced by crystalline necks that connect individual PbSe QDs and modulate the bandgap energy across the epi-SL. Multi-probe scanning tunneling spectroscopy shows bandgap modulation from 0.7 eV in the QDs to 1.1 eV at their necks. Complementary monochromated electron energy-loss spectroscopy demonstrates bandgap modulation in spectral mapping, confirming the presence of these distinct energy states from necking. The results show the modification of the electronic structure of a precision-made nanoscale superlattice, which may be leveraged in new optoelectronic applications.
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7
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Zhang L, Yang T, Feng YP, Wee ATS, Wang Z. MBE-grown ultrathin PtTe 2 films and their layer-dependent electronic structures. NANOSCALE 2022; 14:7650-7658. [PMID: 35548886 DOI: 10.1039/d2nr00944g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
2D platinum ditelluride (PtTe2) has received significant attention for 2D photodetector applications due to its novel physical properties. One of the critical factors that affect device performance is the film quality. Here, using molecular beam epitaxy, we investigate the role of growth temperature in determining the film quality of PtTe2 on highly oriented pyrolytic graphite, and unveil its layer-dependent electronic properties by X-ray photoelectron spectroscopy, Raman spectroscopy, and scanning tunneling microscopy/spectroscopy (STM/STS), as well as density functional theory (DFT) calculations. At low growth temperature (≤250 °C), the PtTe2 film prefers a stack of the monolayer and bilayer, while at ≈300 °C large-area continuous bilayer films are formed. In contrast, high growth temperature (>300 °C) leads to the formation of thick films with high Te deficiency and poor crystallinity. Theoretical calculations confirm the higher thermal stability of bilayer PtTe2 over other layer numbers above a critical crystal size of ≈100 nm2. STS shows that PtTe2 is a semiconductor in the monolayer with a bandgap of 0.80 ± 0.05 eV, and changes to a semimetal from the bilayer. DFT calculations support our experimental results and suggest an indirect bandgap structure of the monolayer. This work provides a systematic study of the layer-dependent electronic structure of 2D PtTe2, and demonstrates that with appropriate substrate and growth temperature choices, high-quality ultrathin PtTe2 films can be obtained, important for device applications.
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Affiliation(s)
- Lei Zhang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
| | - Tong Yang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong SAR, China
| | - Yuan Ping Feng
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore
| | - Zhuo Wang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
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Jia L, Wu J, Zhang Y, Qu Y, Jia B, Chen Z, Moss DJ. Fabrication Technologies for the On-Chip Integration of 2D Materials. SMALL METHODS 2022; 6:e2101435. [PMID: 34994111 DOI: 10.1002/smtd.202101435] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 12/12/2021] [Indexed: 06/14/2023]
Abstract
With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.
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Affiliation(s)
- Linnan Jia
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Jiayang Wu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yuning Zhang
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yang Qu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Baohua Jia
- Centre for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Zhigang Chen
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300457, China
- Department of Physics and Astronomy, San Francisco State University, San Francisco, CA, 94132, USA
| | - David J Moss
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
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Ko W, Gai Z, Puretzky AA, Liang L, Berlijn T, Hachtel JA, Xiao K, Ganesh P, Yoon M, Li AP. Understanding Heterogeneities in Quantum Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2106909. [PMID: 35170112 DOI: 10.1002/adma.202106909] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 02/08/2022] [Indexed: 06/14/2023]
Abstract
Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.
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Affiliation(s)
- Wonhee Ko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Zheng Gai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Tom Berlijn
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - Mina Yoon
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
| | - An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA
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10
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Nanoribbons of 2D materials: A review on emerging trends, recent developments and future perspectives. Coord Chem Rev 2022. [DOI: 10.1016/j.ccr.2021.214335] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
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11
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Bravo S, Pacheco M, Correa JD, Chico L. Topological bands in PdSe 2 pentagonal monolayer. Phys Chem Chem Phys 2022; 24:15749-15755. [DOI: 10.1039/d2cp01822e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electronic structure of monolayer pentagonal palladium diselenide (PdSe2) is analyzed from the topological band theory perspective. Employing first-principles calculations, effective models and symmetry indicators we find that the low-lying...
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Wang Y, Pang J, Cheng Q, Han L, Li Y, Meng X, Ibarlucea B, Zhao H, Yang F, Liu H, Liu H, Zhou W, Wang X, Rummeli MH, Zhang Y, Cuniberti G. Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics. NANO-MICRO LETTERS 2021; 13:143. [PMID: 34138389 PMCID: PMC8203759 DOI: 10.1007/s40820-021-00660-0] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 05/11/2021] [Indexed: 05/07/2023]
Abstract
The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.
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Affiliation(s)
- Yanhao Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
| | - Qilin Cheng
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Yufen Li
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xue Meng
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Bergoi Ibarlucea
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing, 100088, People's Republic of China
| | - Feng Yang
- Department of Chemistry, Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, People's Republic of China
| | - Haiyun Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
- State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan, 250100, People's Republic of China.
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xiao Wang
- Shenzhen Institutes of Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen, 518055, People's Republic of China
| | - Mark H Rummeli
- College of Energy Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou, 215006, People's Republic of China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, 41-819, Zabrze, Poland
- Institute for Complex Materials, IFW Dresden 20 Helmholtz Strasse, 01069, Dresden, Germany
- Institute of Environmental Technology VŠB-Technical University of Ostrava, 17. listopadu 15, Ostrava, 708 33, Czech Republic
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
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13
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Bravo S, Pacheco M, Nuñez V, Correa JD, Chico L. Two-dimensional Weyl points and nodal lines in pentagonal materials and their optical response. NANOSCALE 2021; 13:6117-6128. [PMID: 33885603 DOI: 10.1039/d1nr00064k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional pentagonal structures based on the Cairo tiling are the basis of a family of layered materials with appealing physical properties. In this work we present a theoretical study of the symmetry-based electronic and optical properties of these pentagonal materials. We provide a complete classification of the space groups that support pentagonal structures for binary and ternary systems. By means of first-principles calculations, the electronic band structures and the local spin textures in momentum space are analyzed for four examples of these materials, namely, PdSeTe, PdSeS, InP5 and GeBi2, all of which are dynamically stable. Our results show that pentagonal structures can be realized in chiral and achiral lattices with Weyl nodes pinned at high-symmetry points and nodal lines along the Brillouin zone boundary; these degeneracies are protected by the combined action of crystalline and time-reversal symmetries. Additionally, we computed the linear and nonlinear optical features of the proposed pentagonal materials and discuss some particular features such as the shift current, which shows an enhancement due to the presence of nodal lines and points, and their possible applications.
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Affiliation(s)
- Sergio Bravo
- Departamento de Física, Universidad Técnica Federico Santa María, Valparaíso, Chile
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14
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Tai KL, Chen J, Wen Y, Park H, Zhang Q, Lu Y, Chang RJ, Tang P, Allen CS, Wu WW, Warner JH. Phase Variations and Layer Epitaxy of 2D PdSe 2 Grown on 2D Monolayers by Direct Selenization of Molecular Pd Precursors. ACS NANO 2020; 14:11677-11690. [PMID: 32809801 DOI: 10.1021/acsnano.0c04230] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Two-dimensional (2D) materials and van der Waals heterostructures with atomic-scale thickness provide enormous potential for advanced science and technology. However, insufficient knowledge of compatible synthesis impedes wafer-scale production. PdSe2 and Pd2Se3 are two of the noble transition-metal chalcogenides with excellent physical properties that have recently emerged as promising materials for electronics, optoelectronics, catalyst, and sensors. This research presents a feasible approach to synthesize PdSe2 and Pd2Se3 with inherently asymmetric structure on honeycomb lattice 2D monolayer substrates of graphene and MoS2. We directly deposit a molecular transition-metal precursor complex on the surface of the 2D substrates, followed by low-temperature selenization by chemical vapor flow. Parameter control leads to tuning of the material from monolayer nanocrystals with Pd2Se3 phase, to continuous few-layer PdSe2 films. Annular dark-field scanning transmission electron microscopy (ADF-STEM) reveals the structure, phase variations, and heteroepitaxy at the atomic level. PdSe2 with unconventional interlayer stacking shifts appeared as the kinetic product, whereas the bilayer PdSe2 and monolayer Pd2Se3 are the thermodynamic product. The epitaxial alignment of interlayer rotation and translation between the PdSe2 and underlying 2D substrate was also revealed by ADF-STEM. These results offer both nanoscale and atomic-level insights into direct growth of van der Waals heterostructures, as well as an innovative method for 2D synthesis by predetermined nucleation.
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Affiliation(s)
- Kuo-Lun Tai
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (R.O.C.)
| | - Jun Chen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yi Wen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Hyoju Park
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Qianyang Zhang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yang Lu
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Peng Tang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Christopher S Allen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Electron Physical Sciences Imaging Center, Diamond Light Source Ltd., Didcot, Oxfordshire OX11 0DE, United Kingdom
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (R.O.C.)
- Center for the Intelligent Semiconductor Nano-system Technology Research, National Chiao Tung University, Hsinchu 300, Taiwan
| | - Jamie H Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
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