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Liu W, Zhu Y, Tao Z, Chen Y, Zhang L, Dong A. Black Phosphorus-Based Conductive Hydrogels Assisted by Electrical Stimulus for Skin Tissue Engineering. Adv Healthc Mater 2023; 12:e2301817. [PMID: 37565814 DOI: 10.1002/adhm.202301817] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Indexed: 08/12/2023]
Abstract
Conductive hydrogels have shown great potential in wound healing and skin tissue engineering, owing to their electroactive, mechanical, and chemical properties. However, it still remains as a challenge to incorporate other functions into conductive hydrogels, such as antibacterial ability, controllable drug release, and biodegradability. In this study, a black phosphorus-based conductive hydrogel (HA-DA@BP) is prepared by an amidation reaction coupled with a coordination of Fe3+ -catechol. The hydrogel could be changed from the sol phase to the gel phase under electrical stimulus (ES). The results show that BP could be released under slight acidity, which is cell compatible but could achieve synergistic electrical antibacterial action and promote wound healing. This study proves that BP is a strong candidate for electroactive materials and provides a new insight for the development of BP-based biomedical materials in skin tissue engineering.
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Affiliation(s)
- Wenxin Liu
- Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot, 010021, China
- College of Chemistry and Materials Science, Inner Mongolia Minzu University, Tongliao, 028000, China
| | - Yingnan Zhu
- Institute of Drug Discovery and Development, School of Pharmaceutical Sciences, Center for Drug Safety Evaluation and Research, Zhengzhou University, Zhengzhou, 450001, China
| | - Zhaofan Tao
- Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot, 010021, China
| | - Yuxiang Chen
- Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot, 010021, China
| | - Lei Zhang
- Department of Biochemical Engineering, School of Chemical Engineering and Technology, Frontier Science Center for Synthetic Biology and Key Laboratory of Systems Bioengineering (MOE), Tianjin University, Tianjin, 300350, China
| | - Alideertu Dong
- Engineering Research Center of Dairy Quality and Safety Control Technology, Ministry of Education, Inner Mongolia University, Hohhot, 010021, China
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High-Performance CVD Bilayer MoS 2 Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics. MICROMACHINES 2021; 12:mi12040451. [PMID: 33923705 PMCID: PMC8072592 DOI: 10.3390/mi12040451] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Revised: 04/12/2021] [Accepted: 04/14/2021] [Indexed: 11/17/2022]
Abstract
Two-dimensional (2D) MoS2 have attracted tremendous attention due to their potential applications in future flexible high-frequency electronics. Bilayer MoS2 exhibits the advantages of carrier mobility when compared with monolayer mobility, thus making the former more suitable for use in future flexible high-frequency electronics. However, there are fewer systematical studies of chemical vapor deposition (CVD) bilayer MoS2 radiofrequency (RF) transistors on flexible polyimide substrates. In this work, CVD bilayer MoS2 RF transistors on flexible substrates with different gate lengths and gigahertz flexible frequency mixers were constructed and systematically studied. The extrinsic cutoff frequency (fT) and maximum oscillation frequency (fmax) increased with reducing gate lengths. From transistors with a gate length of 0.3 μm, we demonstrated an extrinsic fT of 4 GHz and fmax of 10 GHz. Furthermore, statistical analysis of 14 flexible MoS2 RF transistors is presented in this work. The study of a flexible mixer demonstrates the dependence of conversion gain versus gate voltage, LO power and input signal frequency. These results present the potential of CVD bilayer MoS2 for future flexible high-frequency electronics.
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Ahmad W, Gong Y, Abbas G, Khan K, Khan M, Ali G, Shuja A, Tareen AK, Khan Q, Li D. Evolution of low-dimensional material-based field-effect transistors. NANOSCALE 2021; 13:5162-5186. [PMID: 33666628 DOI: 10.1039/d0nr07548e] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Field-effect transistors (FETs) have tremendous applications in the electronics industry due to their outstanding features such as small size, easy fabrication, compatibility with integrated electronics, high sensitivity, rapid detection and easy measuring procedures. However, to meet the increasing demand of the electronics industry, efficient FETs with controlled short channel effects, enhanced surface stability, reduced size, and superior performances based on low-dimensional materials are desirable. In this review, we present the developmental roadmap of FETs from conventional to miniaturized devices and highlight their prospective applications in the field of optoelectronic devices. Initially, a detailed study of the general importance of bulk and low-dimensional materials is presented. Then, recent advances in low-dimensional material heterostructures, classification of FETs, and the applications of low-dimensional materials in field-effect transistors and photodetectors are presented in detail. In addition, we also describe current issues in low-dimensional material-based FETs and propose potential approaches to address these issues, which are crucial for developing electronic and optoelectronic devices. This review will provide guidelines for low-dimensional material-based FETs with high performance and advanced applications in the future.
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Affiliation(s)
- Waqas Ahmad
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Youning Gong
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Ghulam Abbas
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Karim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Maaz Khan
- Nanomaterials Research Group, Physics Division, PINSTECH, Nilore 45650, Islamabad, Pakistan
| | - Ghafar Ali
- Nanomaterials Research Group, Physics Division, PINSTECH, Nilore 45650, Islamabad, Pakistan
| | - Ahmed Shuja
- Centre for Advanced Electronics & Photovoltaic Engineering, International Islamic University, Islamabad, Pakistan
| | - Ayesha Khan Tareen
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Qasim Khan
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Delong Li
- Institute of Microscale Optoelectronics, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Shenzhen University, Shenzhen 518060, P. R. China.
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Yin T, Long L, Tang X, Qiu M, Liang W, Cao R, Zhang Q, Wang D, Zhang H. Advancing Applications of Black Phosphorus and BP-Analog Materials in Photo/Electrocatalysis through Structure Engineering and Surface Modulation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001431. [PMID: 33042754 PMCID: PMC7539224 DOI: 10.1002/advs.202001431] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2020] [Revised: 05/24/2020] [Indexed: 05/22/2023]
Abstract
Black phosphorus (BP), an emerging 2D material semiconductor material, exhibits unique properties and promising application prospects for photo/electrocatalysis. However, the applications of BP in photo/electrocatalysis are hampered by the instability as well as low catalysis efficiency. Recently, tremendous efforts have been dedicated toward modulating its intrinsic structure, electronic property, and charge separation for enhanced photo/electrocatalytic performance through structure engineering. Simultaneously, the search for new substitute materials that are BP-analogous is ongoing. Herein, the latest theoretical and experimental progress made in the structural/surface engineering strategies and advanced applications of BP and BP-analog materials in relation to photo/electrocatalysis are extensively explored, and a presentation of the future opportunities and challenges of the materials is included at the end.
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Affiliation(s)
- Teng Yin
- School of Electronics and InformationHangzhou Dianzi UniversityHangzhou310018China
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060China
| | - Liyuan Long
- School of Electronics and InformationHangzhou Dianzi UniversityHangzhou310018China
| | - Xian Tang
- School of Physics and Optoelectronic EngineeringFoshan UniversityFoshan528000China
| | - Meng Qiu
- Key Laboratory of Marine Chemistry Theory and Technology (Ocean University of China)Ministry of EducationQingdao266100P. R. China
| | - Weiyuan Liang
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060China
| | - Rui Cao
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060China
| | - Qizhen Zhang
- Advanced Institute of Information TechnologyPeking UniversityHangzhou311215China
| | - Dunhui Wang
- School of Electronics and InformationHangzhou Dianzi UniversityHangzhou310018China
| | - Han Zhang
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060China
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