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Leshchenko ED, Dubrovskii VG. An Overview of Modeling Approaches for Compositional Control in III-V Ternary Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101659. [PMID: 37242075 DOI: 10.3390/nano13101659] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Revised: 05/11/2023] [Accepted: 05/15/2023] [Indexed: 05/28/2023]
Abstract
Modeling of the growth process is required for the synthesis of III-V ternary nanowires with controllable composition. Consequently, new theoretical approaches for the description of epitaxial growth and the related chemical composition of III-V ternary nanowires based on group III or group V intermix were recently developed. In this review, we present and discuss existing modeling strategies for the stationary compositions of III-V ternary nanowires and try to systematize and link them in a general perspective. In particular, we divide the existing approaches into models that focus on the liquid-solid incorporation mechanisms in vapor-liquid-solid nanowires (equilibrium, nucleation-limited, and kinetic models treating the growth of solid from liquid) and models that provide the vapor-solid distributions (empirical, transport-limited, reaction-limited, and kinetic models treating the growth of solid from vapor). We describe the basic ideas underlying the existing models and analyze the similarities and differences between them, as well as the limitations and key factors influencing the stationary compositions of III-V nanowires versus the growth method. Overall, this review provides a basis for choosing a modeling approach that is most appropriate for a particular material system and epitaxy technique and that underlines the achieved level of the compositional modeling of III-V ternary nanowires and the remaining gaps that require further studies.
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Affiliation(s)
- Egor D Leshchenko
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
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Lozano MS, Gómez VJ. Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires. NANOSCALE ADVANCES 2023; 5:1890-1909. [PMID: 36998660 PMCID: PMC10044505 DOI: 10.1039/d2na00956k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Accepted: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III-V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference between both crystal phases can lead to quantum confinement. Thanks to the precise control in III-V semiconductor NW growth conditions and the deep knowledge on the epitaxial growth mechanisms, it is nowadays possible to control, down to the atomic level, the switching between crystal phases in NWs forming the so-called crystal phase NW-based QDs (NWQDs). The shape and size of the NW bridge the gap between QDs and the macroscopic world. This review is focused on crystal phase NWQDs based on III-V NWs obtained by the bottom-up vapor-liquid-solid (VLS) method and their optical and electronic properties. Crystal phase switching can be achieved in the axial direction. In contrast, in the core/shell growth, the difference in surface energies between different polytypes can enable selective shell growth. One reason for the very intense research in this field is motivated by their excellent optical and electronic properties both appealing for applications in nanophotonics and quantum technologies.
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Affiliation(s)
- Miguel Sinusia Lozano
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
| | - Víctor J Gómez
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
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Sjökvist R, Tornberg M, Marnauza M, Jacobsson D, Dick KA. Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires. ACS NANOSCIENCE AU 2022; 2:539-548. [PMID: 37101854 PMCID: PMC10125347 DOI: 10.1021/acsnanoscienceau.2c00028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 08/23/2022] [Accepted: 08/23/2022] [Indexed: 04/28/2023]
Abstract
Au-seeded semiconductor nanowires have classically been considered to only grow in a layer-by-layer growth mode, where individual layers nucleate and grow one at a time with an incubation step in between. Recent in situ investigations have shown that there are circumstances where binary semiconductor nanowires grow in a multilayer fashion, creating a stack of incomplete layers at the interface between a nanoparticle and a nanowire. In the current investigation, the growth behavior in ternary InGaAs nanowires has been analyzed in situ, using environmental transmission electron microscopy. The investigation has revealed that multilayer growth also occurs for ternary nanowires and appears to be more common than in the binary case. In addition, the size of the multilayer stacks observed is much larger than what has been reported previously. The investigation details the implications of multilayers for the overall growth of the nanowires, as well as the surrounding conditions under which it has manifested. We show that multilayer growth is highly dynamic, where the stack of layers regularly changes size by transporting material between the growing layers. Another observation is that multilayer growth can be initiated in conjunction with the formation of crystallographic defects and compositional changes. In addition, the role that multilayers can have in behaviors such as growth failure and kinking, sometimes observed when creating heterostructures between GaAs and InAs ex situ, is discussed. The prevalence of multilayer growth in this ternary material system implies that, in order to fully understand and accurately predict the growth of nanowires of complex composition and structure, multilayer growth has to be considered.
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Affiliation(s)
- Robin Sjökvist
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- Email
for R.S.:
| | - Marcus Tornberg
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Mikelis Marnauza
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Daniel Jacobsson
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- National
Centre for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Kimberly A. Dick
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
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Dubrovskii VG. Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1064. [PMID: 35407180 PMCID: PMC9000702 DOI: 10.3390/nano12071064] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/05/2022] [Revised: 03/21/2022] [Accepted: 03/22/2022] [Indexed: 02/04/2023]
Abstract
A new model for nanowire growth by molecular beam epitaxy is proposed which extends the earlier approaches treating an isolated nanowire to the case of ensembles of nanowires. I consider an adsorbing substrate on which the arriving growth species (group III adatoms for III-V nanowires) may diffuse to the nanowire base and subsequently to the top without desorption. Analytical solution for the nanowire length evolution at a constant radius shows that the shadowing of the substrate surface is efficient and affects the growth kinetics from the very beginning of growth in dense enough ensembles of nanowires. The model fits quite well the kinetic data on different Au-catalyzed and self-catalyzed III-V nanowires. This approach should work equally well for vapor-liquid-solid and catalyst-free nanowires grown by molecular beam epitaxy and related deposition techniques on unpatterned or masked substrates.
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Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
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