First-Principles Study of the Effect of Native Defects on Spin Polarization and Exchange Coupling Interaction in Semimetal V3O4

Ab initio investigations of a CoBiS monolayer with and without point defects

Through density functional theory (DFT) calculations, a new triclinic monolayer, namely CoBiS, with higher stability than that of penta-CoBiS, is predicted. Our results show that this monolayer is a nonmagnetic metallic compound. To tune its magnetic properties, we systematically investigated the formation and energetics of different point defects in the CoBiS monolayer, such as V_Bi, V_S and V_Co. We find that the monolayer becomes magnetic with the different points defects. Our calculated magnetic anisotropy energy (MAE) indicated that V_Bi and V_S exhibit out-of-plane MAE, while the MAE is in-plane for V_Co. By solving the Heisenberg model using the Monte Carlo simulation method, we obtain transition temperatures for V_S and V_Co systems much larger than room temperature, implying potential applications in spintronic devices.

Enhanced Adhesion Energy at Oxide/Ag Interfaces for Low-Emissivity Glasses: Theoretical Insight into Doping and Vacancy Effects

Low-emissivity glasses rely on multistacked architectures with a thin silver layer sandwiched between oxide layers. The mechanical stability of the silver/oxide interfaces is a critical parameter that must be maximized. Here, we demonstrate by means of quantum-chemical calculations that a low work of adhesion at interfaces can be significantly increased via doping and by introducing vacancies in the oxide layer. For the sake of illustration, we focus on the ZrO₂(111)/Ag(111) interface exhibiting a poor adhesion in the pristine state and quantify the impact of introducing n-type dopants or p-type dopants in ZrO₂ and vacancies in oxygen atoms (nV_O; with n = 1, 2, 4, 8, 10, 16), zirconium atoms (mV_Zr; with m = 1, 2, 4, 8), or both (nV_O + mV_Zr; with m/n = 1:2, 1:4, 2:2, 2:4). In the case of doping, interfacial electron transfer promotes an increase in the work of adhesion, from initially 0.16 to ∼0.8 J m^-2 (n-type) and ∼2.0 J m^-2 (p-type) at 10% doping. A similar increase in the work of adhesion is obtained by introducing vacancies, e.g., V_O [V_Zr] in the oxide layer yields a work of adhesion of ∼1.5-2.0 J m^-2 at 10% vacancies. An increase is also observed when mixing V_O and V_Zr vacancies in a nonstoichiometric ratio (nV_O + mV_Zr; with 2n ≠ m), while a stoichiometric ratio of V_O and V_Zr has no impact on the interfacial properties.