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Nam JW, Lee HK, Kim BS, Gwag JS, Kim Y, Youn YS. Adsorption behavior of furan at Ge(100) surface. Sci Rep 2023; 13:8155. [PMID: 37208472 DOI: 10.1038/s41598-023-34843-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Accepted: 05/09/2023] [Indexed: 05/21/2023] Open
Abstract
The adsorption behavior of furan on the Ge(100) surface was studied using a combination of high-resolution photoemission spectroscopy (HRPES) and density functional theory (DFT) calculations. We identified the two adsorption species produced by the [4 + 2] cycloaddition and deoxygenation reactions of furan with the Ge(100) surface in a ratio of approximately 76:24 at the surveyed coverages, via an analysis of the binding energies and relative area proportions of all the peaks in the C 1s and O 1s core-level spectra. The DFT simulation results revealed that the [4 + 2] cycloaddition and deoxygenation adducts are thermodynamically preferred by the reaction of furan with the Ge(100) surface compared with others, which is consistent with the HRPES results. The findings will further our understanding of the surface reactions of five-membered heterocyclic molecules.
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Affiliation(s)
- Jeong-Woo Nam
- Department of Chemistry, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk, 38541, Republic of Korea
| | - Han-Koo Lee
- Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Byeong-Seon Kim
- Department of Chemistry Education and RINS, Gyeongsang National University, Jinju, 52828, Republic of Korea
| | - Jin Seog Gwag
- Department of Physics, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk, 38541, Republic of Korea
| | - Youngsoo Kim
- Department of Chemistry, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk, 38541, Republic of Korea
| | - Young-Sang Youn
- Department of Chemistry, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk, 38541, Republic of Korea.
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Drozdowska K, Rehman A, Sai P, Stonio B, Krajewska A, Dub M, Kacperski J, Cywiński G, Haras M, Rumyantsev S, Österlund L, Smulko J, Kwiatkowski A. Organic Vapor Sensing Mechanisms by Large-Area Graphene Back-Gated Field-Effect Transistors under UV Irradiation. ACS Sens 2022; 7:3094-3101. [PMID: 36121758 DOI: 10.1021/acssensors.2c01511] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The gas sensing properties of graphene back-gated field-effect transistor (GFET) sensors toward acetonitrile, tetrahydrofuran, and chloroform vapors were investigated with the focus on unfolding possible gas detection mechanisms. The FET configuration of the sensor device enabled gate voltage tuning for enhanced measurements of changes in DC electrical characteristics. Electrical measurements were combined with a fluctuation-enhanced sensing methodology and intermittent UV irradiation. Distinctly different features in 1/f noise spectra for the organic gases measured under UV irradiation and in the dark were observed. The most intense response observed for tetrahydrofuran prompted the decomposition of the DC characteristic, revealing the photoconductive and photogating effect occurring in the graphene channel with the dominance of the latter. Our observations shed light on understanding surface processes at the interface between graphene and volatile organic compounds for graphene-based sensors in ambient conditions that yield enhanced sensitivity and selectivity.
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Affiliation(s)
- Katarzyna Drozdowska
- Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications, and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland
| | - Adil Rehman
- CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland
| | - Pavlo Sai
- CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland
| | - Bartłomiej Stonio
- CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland.,Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology, 02-822 Warsaw, Poland
| | - Aleksandra Krajewska
- CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland
| | - Maksym Dub
- CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland
| | - Jacek Kacperski
- Institute of High Pressure Physics PAS, Sokołowska 29/37, 01-142 Warsaw, Poland
| | - Grzegorz Cywiński
- CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland
| | - Maciej Haras
- CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland.,Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology, 02-822 Warsaw, Poland
| | - Sergey Rumyantsev
- CENTERA Laboratories, Institute of High Pressure Physics PAS, 01-142 Warsaw, Poland
| | - Lars Österlund
- Department of Materials Science and Engineering, The Ångström Laboratory, Uppsala University, P. O. Box 35, 75103 Uppsala, Sweden
| | - Janusz Smulko
- Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications, and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland
| | - Andrzej Kwiatkowski
- Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications, and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland
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Park S, Kim KJ, Nam JW, Youn YS. Reaction Behaviors of S-, O-, and N-containing Aliphatic Molecules with a Propyl Moiety on Ge(100) Surface. Chemphyschem 2021; 22:1722-1726. [PMID: 34101975 DOI: 10.1002/cphc.202100250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2021] [Revised: 05/21/2021] [Indexed: 11/05/2022]
Abstract
The reaction pathways of 1-propanethiol, 1-propanol, and propylamine molecules, containing a propyl moiety, on a Ge(100) surface were investigated using high-resolution photoemission spectroscopy (HRPES) experiments and density functional theory (DFT) calculations. Upon analysis of the HRPES data, the adsorption of 1-propanethiol and 1-propanol was found to occur through a dissociation reaction, whereas that of propylamine took place via N dative bonding at room temperature. On the basis of our DFT results, adsorption geometries and transition states for each of these molecules on the Ge(100) surface were confirmed. Systematic studies of S-, O-, and N-containing molecules, composed of an identical propyl moiety, on the Ge(100) surface provide insight into the adsorption mechanism of aliphatic molecules containing alkyl chains on the Ge(100) surface.
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Affiliation(s)
- Sangjune Park
- Department of Chemistry, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk, 38541, Republic of Korea
| | - Ki-Jeong Kim
- Pohang Accelerator Laboratory, Pohang University of Science and Technology, 80 Jigokro 127-beongil, Namgu, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Jeong-Woo Nam
- Department of Chemistry, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk, 38541, Republic of Korea
| | - Young-Sang Youn
- Department of Chemistry, Yeungnam University, Daehak-ro 280, Gyeongsan, Gyeongbuk, 38541, Republic of Korea
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