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Manopo J, Lubis TP, Maryono MAME, Arifin P, Winata T, Widita R, Darma Y. Strongly bound Wannier-Mott exciton in pristine (LaO)MnAs and origin of ferrimagnetism in F-doped (LaO)MnAs. RSC Adv 2023; 13:14033-14040. [PMID: 37181508 PMCID: PMC10167672 DOI: 10.1039/d3ra01506h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2023] [Accepted: 04/23/2023] [Indexed: 05/16/2023] Open
Abstract
We study the electronic, magnetic, and optical properties of (LaO1-xFx)MnAs (x = 0, 0.0625, 0.125, 0.25) systems, calculated using the generalized gradient approximation (GGA) corrected by Hubbard energy (U) = 1 eV. For x = 0, this system shows equal bandgap (Eg) values for spin-up and spin-down of 0.826 eV, with antiferromagnetic (AFM) properties and local magnetic moment in the Mn site of 3.86 μB per Mn. By doping F with x = 0.0625, the spin-up and spin-down Eg values decrease to 0.778 and 0.798 eV, respectively. This system, along with antiferromagnetic properties, also has a local magnetic moment in the Mn site of 3.83 μB per Mn. Increasing doping F to x = 0.125 induces increases of Eg to 0.827 and 0.839 eV for spin-up and spin-down. However, the AFM remains, where μMn slightly decreases to 3.81 μB per Mn. Furthermore, the excess electron from the F ion induces the Fermi level to move toward the conduction band and changes the bandgap type from indirect bandgap (Γ → M) to direct bandgap (Γ → Γ). Increasing x to 25% induces the decrease of spin-up and spin-down Eg to 0.488 and 0.465 eV, respectively. This system shows that the AFM changes to ferrimagnetism (FIM) for x = 25%, with a total magnetic moment of 0.78 μB per cell, which is mostly contributed by Mn 3d and As 4p local magnetic moments. The change from AFM to FIM behavior results from competition between superexchange AFM ordering and Stoner's exchange ferromagnetic ordering. Pristine (LaO)MnAs exhibits high excitonic binding energy (∼146.5 meV) due to a flat band structure. Our study shows that doping F in the (LaO)MnAs system significantly modifies the electronic, magnetic, and optical properties for novel advanced device applications.
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Affiliation(s)
- Jessie Manopo
- Quantum Semiconductor and Devices Lab, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
- Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
- Research Collaboration Center for Quantum Technology 2.0 Bandung 40132 Indonesia
| | - Tio Prince Lubis
- Quantum Semiconductor and Devices Lab, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
- Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
| | - Muhammad Arief Mustajab Enha Maryono
- Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
| | - Pepen Arifin
- Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
| | - Toto Winata
- Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
| | - Rena Widita
- Nuclear Physics and Biophysics Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
| | - Yudi Darma
- Quantum Semiconductor and Devices Lab, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
- Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Bandung Institute of Technology Jalan Ganesha 10 Bandung 40132 Indonesia
- Research Collaboration Center for Quantum Technology 2.0 Bandung 40132 Indonesia
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