InP and AlInP(001)(2 × 4) Surface Oxidation from Density Functional Theory

Insights into structural defect formation in individual InP/ZnSe/ZnS quantum dots under UV oxidation

InP/ZnSe/ZnS quantum dots (QDs) stand as promising candidates for advancing QD-organic light-emitting diodes (QLED), but low emission efficiency due to their susceptibility to oxidation impedes applications. Structural defects play important roles in the emission efficiency degradation of QDs, but the formation mechanism of defects in oxidized QDs has been less investigated. Here, we investigated the impact of diverse structural defects formation on individual QDs and propagation during UV-facilitated oxidation using high-resolution (scanning) transmission electron microscopy. UV-facilitated oxidation of the QDs alters shell morphology by the formation of surface oxides, leaving ZnSe surfaces poorly passivated. Further oxidation leads to the formation of structural defects, such as dislocations, and induces strain at the oxide-QD interfaces, facilitating In diffusion from the QD core. These changes in the QD structures result in emission quenching. This study provides insight into the formation of structural defects through photo-oxidation, and their effects on emission properties of QDs.

The interfacial structure of InP(100) in contact with HCl and H2SO4 studied by reflection anisotropy spectroscopy

Indium phosphide and derived compound semiconductors are materials often involved in high-efficiency solar water splitting due to their versatile opto-electronic properties. Surface corrosion, however, typically deteriorates the performance of photoelectrochemical solar cells based on this material class. It has been reported that (photo)electrochemical surface functionalisation protects the surface by combining etching and controlled corrosion. Nevertheless, the overall involved process is not fully understood. Therefore, access to the electrochemical interface structure under operando conditions is crucial for a more detailed understanding. One approach for gaining structural insight is the use of operando reflection anisotropy spectroscopy. This technique allows the time-resolved investigation of the interfacial structure while applying potentials in the electrolyte. In this study, p-doped InP(100) surfaces are cycled between anodic and cathodic potentials in two different electrolytes, hydrochloric acid and sulphuric acid. For low, 10 mM electrolyte concentrations, we observe a reversible processes related to the reduction of a surface oxide phase in the cathodic potential range which is reformed near open-circuit potentials. Higher concentrations of 0.5 N, however, already lead to initial surface corrosion.