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Jiang N, Ma G, Song D, Qiao B, Liang Z, Xu Z, Wageh S, Al-Ghamdi A, Zhao S. Defects in lead halide perovskite light-emitting diodes under electric field: from behavior to passivation strategies. NANOSCALE 2024; 16:3838-3880. [PMID: 38329288 DOI: 10.1039/d3nr06547b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Lead halide perovskites (LHPs) are emerging semiconductor materials for light-emitting diodes (LEDs) owing to their unique structure and superior optoelectronic properties. However, defects that initiate degradation of LHPs through external stimuli and prompt internal ion migration at the interfaces remain a significant challenge. The electric field (EF), which is a fundamental driving force in LED operation, complicates the role of these defects in the physical and chemical properties of LHPs. A deeper understanding of EF-induced defect behavior is crucial for optimizing the LED performance. In this review, the origins and characterization of defects are explored, indicating the influence of EF-induced defect dynamics on LED performance and stability. A comprehensive overview of recent defect passivation approaches for LHP bulk films and nanocrystals (NCs) is also provided. Given the ubiquity of EF, a summary of the EF-induced defect behavior can enhance the performance of perovskite LEDs and related optoelectronic devices.
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Affiliation(s)
- Na Jiang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Guoquan Ma
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Dandan Song
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Bo Qiao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Zhiqin Liang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Zheng Xu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Ahmed Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Suling Zhao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing, 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, China
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Lu P, Li T, Lu M, Ruan C, Sun S, Wu Z, Zhong Y, Zhang F, Gao Y, Huang Y, Wang Y, Hu J, Yan F, Zhang Y. Enrichment of anchoring sites by introducing supramolecular halogen bonds for the efficient perovskite nanocrystal LEDs. LIGHT, SCIENCE & APPLICATIONS 2023; 12:215. [PMID: 37666825 PMCID: PMC10477334 DOI: 10.1038/s41377-023-01266-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2023] [Revised: 07/28/2023] [Accepted: 08/18/2023] [Indexed: 09/06/2023]
Abstract
Considering the multi-functionalization of ligands, it is crucial for ligand molecular design to reveal the landscape of anchoring sites. Here, a typical triphenylphosphine (TPP) ligand was employed to explore its effect on the surface of CsPbI3 perovskite nanocrystals (PNCs). Except for the conventionally considered P-Pb coordination, an P-I supramolecular halogen bonding was also found on the NC surface. The coexistence of the above two types of bonding significantly increased the formation energy of iodine vacancy defects and improved the photoluminescence quantum yield of PNCs up to 93%. Meanwhile, the direct interaction of P and I enhanced the stability of the Pb-I octahedra and dramatically inhibited the migration of I ions. Furthermore, the introduction of additional benzene rings (2-(Diphenylphosphino)-biphenyl (DPB)) increased the delocalized properties of the PNC surface and significantly improved the charge transport of the PNCs. As a result, the DPB passivated CsPbI3 NCs based top-emitting LEDs exhibite a peak external quantum efficiency (EQE) of 22.8%, a maximum luminance of 15, 204 cd m-2, and an extremely low-efficiency roll-off of 2.6% at the current density of 500 mA cm-2.
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Affiliation(s)
- Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Ting Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China.
| | - Cheng Ruan
- Changchun Cedar Electronics Technology Co., Ltd., Changchun, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Zhennan Wu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yuan Zhong
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Fujun Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yanbo Gao
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China
| | - Yaowei Huang
- Changchun Cedar Electronics Technology Co., Ltd., Changchun, China
| | - Yang Wang
- Changchun Cedar Electronics Technology Co., Ltd., Changchun, China.
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
| | - Junhua Hu
- Key Laboratory of Materials Physics of Ministry of Education Department of Physics and Engineering, Zhengzhou University, Zhengzhou, China
| | - Fengping Yan
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, China.
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, China.
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Kuppu SV, Sonaimuthu M, Marimuthu S, Venkatesan S, Murugesan B, Ahmed N, Karuppanan A, Sengodu P, Jeyaraman A, Thambusamy S, Lee YR. NiO@ZnO composite bimetallic nanocrystalline decorated TiO2-CsPbI3 photo-anode surface modifications for perovskite-sensitized solar cell applications. J Mol Struct 2022. [DOI: 10.1016/j.molstruc.2022.134763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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Wang Y, Zhao H, Piotrowski M, Han X, Ge Z, Dong L, Wang C, Pinisetty SK, Balguri PK, Bandela AK, Thumu U. Cesium Lead Iodide Perovskites: Optically Active Crystal Phase Stability to Surface Engineering. MICROMACHINES 2022; 13:mi13081318. [PMID: 36014240 PMCID: PMC9414704 DOI: 10.3390/mi13081318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2022] [Revised: 08/07/2022] [Accepted: 08/10/2022] [Indexed: 05/04/2023]
Abstract
Among perovskites, the research on cesium lead iodides (CsPbI3) has attracted a large research community, owing to their all-inorganic nature and promising solar cell performance. Typically, the CsPbI3 solar cell devices are prepared at various heterojunctions, and working at fluctuating temperatures raises questions on the material stability-related performance of such devices. The fundamental studies reveal that their poor stability is due to a lower side deviation from Goldschmidt's tolerance factor, causing weak chemical interactions within the crystal lattice. In the case of organic-inorganic hybrid perovskites, where their stability is related to the inherent chemical nature of the organic cations, which cannot be manipulated to improve the stability drastically whereas the stability of CsPbI3 is related to surface and lattice engineering. Thus, the challenges posed by CsPbI3 could be overcome by engineering the surface and inside the CsPbI3 crystal lattice. A few solutions have been proposed, including controlled crystal sizes, surface modifications, and lattice engineering. Various research groups have been working on these aspects and had accumulated a rich understanding of these materials. In this review, at first, we survey the fundamental aspects of CsPbI3 polymorphs structure, highlighting the superiority of CsPbI3 over other halide systems, stability, the factors (temperature, polarity, and size influence) leading to their phase transformations, and electronic band structure along with the important property of the defect tolerance nature. Fortunately, the factors stabilizing the most effective phases are achieved through a size reduction and the efficient surface passivation on the delicate CsPbI3 nanocrystal surfaces. In the following section, we have provided the up-to-date surface passivating methods to suppress the non-radiative process for near-unity photoluminescence quantum yield, while maintaining their optically active phases, especially through molecular links (ligands, polymers, zwitterions, polymers) and inorganic halides. We have also provided recent advances to the efficient synthetic protocols for optically active CsPbI3 NC phases to use readily for solar cell applications. The nanocrystal purification techniques are challenging and had a significant effect on the device performances. In part, we summarized the CsPbI3-related solar cell device performances with respect to the device fabrication methods. At the end, we provide a brief outlook on the view of surface and lattice engineering in CsPbI3 NCs for advancing the enhanced stability which is crucial for superior optical and light applications.
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Affiliation(s)
- Yixi Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hairong Zhao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Marek Piotrowski
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiao Han
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zhongsheng Ge
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Lizhuang Dong
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Chengjie Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Sowjanya Krishna Pinisetty
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Praveen Kumar Balguri
- Department of Aeronautical Engineering, Institute of Aeronautical Engineering, Hyderabad 500043, India
| | - Anil Kumar Bandela
- Department of Chemistry, Ben Gurion University of the Negev, Beer Sheva 84105, Israel
- Correspondence: (A.K.B.); (U.T.)
| | - Udayabhaskararao Thumu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
- Correspondence: (A.K.B.); (U.T.)
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