Thermoelectric Properties of Pristine Graphyne and the BN-Doped Graphyne Family

Bandgap prediction of non-metallic crystals through machine learning approach

The determination of bandgap is the heart of electronic structure of any material and is a crucial factor for thermoelectric performance of it. Due to large amount to data (features) that are related to bandgap are now a days available, it is possible to make use of machine learning (ML) approach to predict the bandgap of the material. The study commences by selecting the feature through Pearson correlation study between bandgap and various thermoelectric parameters in non-metallic crystals. Among the 42 parameters available in the dataset, the Seebeck coefficient and its corresponding temperatures show high correlation with the bandgap. With these three selected features we have used different ML models like multilinear regression, polynomial regression, random forest regression and support vector regression to predict the bandgap. Amongst the different ML models considered, random forest regression outperforms the other models to predict the bandgap withR2value of 97.55% between actual bandgap and predicted bandgap.

Tunability of electronic and thermoelectric properties of hexagonal boron nitride with carbon impurities under magnetic field: Tight binding investigation

Utilizing the Kubo-Greenwood formula, Tight Binding calculations were employed to examine the electronic and thermoelectric properties of hexagonal boron nitride (h-BN) with carbon impurity instead of boron, nitrogen and pairs boron-nitrogen. The electronic properties of the pristine monolayer BN are markedly impacted by the introduction of carbon dopants and its band gap reduction is directly correlated with the concentration of carbon impurities. The electronic properties of doped h-BN are influenced by the presence of a magnetic field, leading to subband separation and band gap narrowing, independent of the impurity types. The thermal conductivity and magnetic susceptibility of the CBN-doped monolayer BN structure are higher than those of the BC and NC doped h-BN structures and for all structures, their properties have a strong dependence on the magnetic field. The Lorenz Number for all structures has peak at the TM temperature which shifts to a lower temperature as the impurity concentration decreases.

Investigation of thermoelectric properties of cadmium selenide CdnSen (n= 7, 11, 13) molecular junctions: a DFT study

CONTEXT

The thermoelectric properties of cadmium selenide (CdnSen) molecular junctions (n = 7, 11, 13) were investigated before and after adding hydrogen atoms. The effects of hydrogen passivation on the transmission and thermopower curves were analyzed. CdSe-diamantane (Cd7Se7) and CdSe-tetramantane (Cd11Se11) junctions exhibited the best thermoelectric performance due to their low surface reconstruction energy, which is attributed to the number of dangling and unsaturated bonds. This study guides the design of new molecular junctions with desired thermoelectric properties.

METHOD

The electrical and thermal properties of cadmium selenide (CdnSen) molecular junctions (n = 7, 11, 13) were investigated using a ballistic quantum transport method based on the non-equilibrium Green's function (NEGF) approach. Thermoelectric properties were calculated for the molecular junctions with different structures before and after hydrogen passivation. Density functional theory (DFT) calculations were performed at the B3LYP level with the 3-21G basis set for the Cd atoms and the 6-31G** basis set for the Se atoms. The SIESTA and GOLLUM codes were used to study the effect of changing the shape and size of each structure on its electrical and thermal characteristics.

Investigating the thermoelectric properties of the (6, 6) two sided-closed single-walled boron nitride nanotubes ((6, 6) TSC-SWBNNTs) due to the impurity of a single carbon atom and temperature changes

In this research, the thermoelectric properties of the (6, 6) two sided-closed single-walled boron nitride nanotube ((6, 6) TSC-SWBNNT) was investigated in the state without impurity and carbon atom impurity instead of boron and nitrogen atoms in the center, left, and right the nanotube. The test conditions were the energy range of -5.5 to 5.5 eV and temperatures of 200, 300, 500, 700, 900, 1100, and 1300 K. Based on the obtained results, with an increase in temperature and the creation of impurities, the band gap is affected and becomes noticeably smaller. At the temperature of 1300 K, the band gap shows the greatest decrease and the peak height shows the least decrease. With increasing temperature, the number of peaks has decreased, suggesting an increase in the mobility of electrons and holes and a decrease in their localization. The Seebeck coefficient figures also changed by replacing carbon atoms with boron and nitrogen atoms in different parts of the nanotube. In addition, the height of the heat conduction peaks increased with increasing temperature. However, the heat conduction values are generally in the range of 9-10 nm, which are small values. With the increase in temperature, ZT values increased such that the highest values corresponded to the temperature of 1300 K. The ZT values higher than 1, especially at high temperatures, show that (6, 6) TSC-SWBNNT nanotubes are suitable candidates for thermoelectric materials.

Effect of ZnO dimers on the thermoelectric performance of armchair graphene nanoribbons

Enhancing the thermoelectric performance in engineered graphene nanoribbons is used to produce thermoelectric nanodevices, which are important in many applications. By using a chemical doping method, armchair graphene nanoribbons (AGNRs) can have thermoelectric properties that are tunable. We predicted that changing the number and geometrical pattern of zinc oxide (ZnO) dimers in an AGNR can engineer thermoelectric properties, so we used density functional-based tight binding (DFTB) combined with the non-equilibrium Green's function (NEGF) to investigate the geometric, electronic, and thermoelectric properties of the AGNR with and without various dopants of ZnO dimers. With three forms of ZnO dimers, ortho, meta, and para dimers, different concentration ratios of Zn and O atoms are used. Our results indicate that the electronic features of AGNR are influenced not only by the concentrations of ZnO dimers but also by the geometrical pattern of ZnO dimers in the AGNR. These results are helpful in better understanding the effect of chemical doping on the transport properties of AGNRs and in motivating nanodevices to improve their thermoelectric performance.

2+δ-Dimensional Materials via Atomistic Z-Welding

Pivotal to functional van der Waals stacked flexible electronic/excitonic/spintronic/thermoelectric chips is the synergy amongst constituent layers. However; the current techniques viz. sequential chemical vapor deposition, micromechanical/wet-chemical transfer are mostly limited due to diffused interfaces, and metallic remnants/bubbles at the interface. Inter-layer-coupled 2+δ-dimensional materials, as a new class of materials can be significantly suitable for out-of-plane carrier transport and hence prompt response in prospective devices. Here, the discovery of the use of exotic electric field ≈10⁶  V cm^{- 1} (at microwave hot-spot) and 2 thermomechanical conditions i.e. pressure ≈1 MPa, T ≈ 200 °C (during solvothermal reaction) to realize 2+δ-dimensional materials is reported. It is found that P_z P_z chemical bonds form between the component layers, e.g., CB and CN in G-BN, MoN and MoB in MoS₂ -BN hybrid systems as revealed by X-ray photoelectron spectroscopy. New vibrational peaks in Raman spectra (BC ≈1320 cm^-1 for the G-BN system and MoB ≈365 cm^-1 for the MoS₂ -BN system) are recorded. Tunable mid-gap formation, along with diodic behavior (knee voltage ≈0.7 V, breakdown voltage ≈1.8 V) in the reduced graphene oxide-reduced BN oxide (RGO-RBNO) hybrid system is also observed. Band-gap tuning in MoS₂ -BN system is observed. Simulations reveal stacking-dependent interfacial charge/potential drops, hinting at the feasibility of next-generation functional devices/sensors.

Influence of Alkali Metal Doping and BN Substitution on the Second-Order Nonlinear Optical Properties of Graphyne: A Theoretical Perspective

The electronic and nonlinear optical (NLO) properties of BN-substituted graphynes and the corresponding alkali-doped hybrid systems have been determined using density functional theory. When the carbon atoms in the graphyne are replaced by BN pairs, the highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gap (E_gap) increases to some extent, and the static first hyperpolarizabilities (β₀) of the novel systems hardly increase. However, when an alkali atom is introduced on the surface of BN-substituted graphyne, the doping effect can effectively modulate the electronic and NLO properties. Doping the alkali atom can significantly narrow the wide E_gap of BN-substituted graphynes in the range of 1.03-2.03 eV. Furthermore, the doping effect brings considerable β₀ values to these alkali-doped systems, which are 52-3609 au for Li-doped systems and 3258-211 053 au for Na/K-doped ones. The result reveals that the β₀ values of alkali-doped complexes are influenced by the atomic number of alkali metals and the proportion of BN pairs. The nature of the excellent NLO responses of alkali-doped complexes can be understood by the low excitation energy of the crucial excited state and the analysis of the first hyperpolarizability density. Besides, these alkali-doped complexes have a deep-ultraviolet working region. Therefore, the combined effect of alkali metal doping and BN substitution can be an excellent strategy to design novel high-performance NLO materials based on graphyne.

Electronic and transport property of two-dimensional boron phosphide sheet

Using density functional theory (DFT) approach, we have investigated the effect of strain on the electronic properties of two-dimensional (2D) boron phosphide (BP) sheet. With the increase in uniaxial and biaxial tensile strain band gap increases while band gap decreases and becomes metallic with the increase in uniaxial and biaxial compressive strain. Electrical and thermal transport properties of zigzag and armchair 2D BP sheets have been explored using nonequilibrium Green's function formalism (NEGF) and the changes in the nature of I-V characteristics with the application of strain have been reported. The magnitude of the current decreases with the increase of strain value along transport direction for both zigzag and armchair 2D BP sheets. For unstrained systems, the magnitude of current is nearly same for both zigzag and armchair 2D BP sheets. However, for a particular strain value, magnitude of current is more for zigzag sheet compared to armchair sheet. Though both zigzag and armchair 2D BP sheets have reasonably high ZT_e which confirms its potentiality for designing efficient thermoelectric material but zigzag sheet is more preferable for thermoelectric application compared to armchair sheet due to its higher ZT_e in comparison to armchair sheet_.