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Hua L, Li Z. Ideal Vacuum-Based Efficient and High-Throughput Computational Screening of Type II Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38019534 DOI: 10.1021/acsami.3c11082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Heterojunctions featuring a type II band alignment play a crucial role in a wide range of devices, particularly in the realm of solar cells. However, the design of such heterojunctions with a specific type of band alignment poses a substantial challenge due to the immense number of potential combinations of bulk semiconductors and their relative orientations. In this study, we propose an efficient, high-throughput computational screening method tailored for heterojunctions. Our approach, using the ideal vacuum level as a reference energy, eliminates the need for explicit electronic structure calculations for junctions. Through this protocol, we identify 1041 type II heterojunctions out of 2692 structures constructed from 86 selected inorganic compounds with appropriate band gaps sourced from the Inorganic Crystal Structure Database. For potential application in solar cells, we assess these heterojunctions, and remarkably, 58 of them exhibit a power conversion efficiency (PCE) exceeding 15%, with 13 surpassing the 20% threshold. Test calculations with expensive interface models confirm the reliability of PCE predictions based on ideal vacuums. These predictions will be of benefit in assessing the material applicability for solar cell applications. Furthermore, the versatility of our proposed screening method extends beyond solar cells, making it a valuable theoretical design tool that can be applied to a wide range of heterojunction devices.
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Affiliation(s)
- Ling Hua
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhenyu Li
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
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Nguyen HT, Cuong NQ, Vi VTT, Hieu NN, Tran LPT. Moderate direct band-gap energies and high carrier mobilities of Janus XWSiP 2 (X = S, Se, Te) monolayers via first-principles investigation. Phys Chem Chem Phys 2023; 25:21468-21478. [PMID: 37539527 DOI: 10.1039/d3cp02037a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/05/2023]
Abstract
Two-dimensional (2D) Janus materials with extraordinary properties are promising candidates for utilization in advanced technologies. In this study, new 2D Janus XWSiP2 (X = S, Se, Te) monolayers were constructed and their properties were systematically analyzed by using first-principles calculations. All three structures of SWSiP2, SeWSiP2, and TeWSiP2 exhibit high energetic stability for the experimental fabrication with negative and high Ecoh values, the elastic constants obey the criteria of Born-Huang, and no imaginary frequency exists in the phonon dispersion spectra. The calculated results from the PBE and HSE06 approaches reveal that the XWSiP2 are semiconductors with moderate direct band-gaps varying from 1.01 eV to 1.06 eV using the PBE method, and 1.39 eV to 1.44 eV using the HSE06 method. In addition, the electronic band structures of the three monolayers are significantly affected by the applied strains. Interestingly, the transitions from a direct to indirect semiconductor are observed for different biaxial strains εb. The transport parameters including the carrier mobility values along the x direction μx and y direction μy were also calculated to study the transport properties of the XWSiP2. The results indicate that the XWSiP2 monolayers not only have high carrier mobilities but also anisotropy in the transport directions for both holes and electrons. Together with the moderate and tunable energy gaps, the XWSiP2 materials are found to be potential candidates for application in the photonic, photovoltaic, optoelectronic, and electronic fields.
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Affiliation(s)
- Hiep T Nguyen
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Nguyen Q Cuong
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Vo T T Vi
- Faculty of Basic Sciences, University of Medicine and Pharmacy, Hue University, Hue 530000, Vietnam.
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam
- Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam
| | - Linh P T Tran
- Faculty of Physics, Hanoi National University of Education, Hanoi 100000, Vietnam
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Bikerouin M, Chdil O, Balli M. Solar cells based on 2D Janus group-III chalcogenide van der Waals heterostructures. NANOSCALE 2023; 15:7126-7138. [PMID: 37000599 DOI: 10.1039/d2nr06200c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Janus monolayers, realized by breaking the vertical structural symmetry of two-dimensional (2D) materials, pave the way for a new era of high-quality and high-performance atomically-thin vertical p-n heterojunction solar cells. Herein, employing first-principles computations, Janus group-III chalcogenide monolayers, MX, M2XY, MM'X2 and MM'XY (M, M' = Ga, In; X, Y = S, Se, Te), are deeply investigated in view of their implementation in 2D photovoltaic systems. Their stability analysis reveals that the 21 investigated monolayers are energetically, thermodynamically, mechanically, dynamically, and thermally stable, confirming their growth feasibility under ambient conditions. Furthermore, owing to their optimal band gap, high charge carrier mobilities, and strong light absorption, 2D Janus group-III monolayers are predicted as promising candidates for 2D excitonic solar cell applications. In fact, 46 type-II van der Waals (vdW) heterostructures with a lattice mismatch of less than 5% are identified by analyzing the band alignments of the investigated monolayers obtained through the HSE + SOC approach. In particular, 7 vertical vdW heterojunctions with a power conversion efficiency (PCE) higher than 20% are predicted and might be the focus of future experimental and theoretical studies. To further confirm the type II band alignment, the Ga2STe-GaInS2 vdW heterostructure, which reveals the highest PCE of 23.69%, is thoroughly investigated. Our results not only predict and evaluate stable 2D Janus group-III chalcogenide monolayers and vdW heterostructures, but also suggest that they could be used as materials for next-generation optoelectronic and photovoltaic devices.
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Affiliation(s)
- M Bikerouin
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - O Chdil
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
| | - M Balli
- AMEEC team, LERMA, College of Engineering and Architecture, International University of Rabat, parc Technopolis, Rocade de Rabat-Salé, 11100, Morocco.
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Xie M, Li Y, Liu X, Yang J, Li H, Li X. Two-dimensional IV-VA 3 monolayers with enhanced charge mobility for high-performance solar cells. Phys Chem Chem Phys 2022; 24:20694-20700. [PMID: 36047394 DOI: 10.1039/d2cp03269d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
High-performance photovoltaics (PVs) constitute a subject of extensive research efforts, in which silicon (Si)-based solar cells (SCs) have been widely commercialized. However, the low carrier mobility of Si-based SCs can limit the effective charge separation, thereby negatively impacting the device performance. Here, via calculating the physicochemical and PV performance based on density functional theory, we demonstrate SCs based on two-dimensional (2D) group IV and V compounds with an AX3 configuration. Firstly, the cleavage energies of AX3 (A = Si, Ge; X = P, As, and Sb) are calculated to be less than 1 J m-2, providing an experimental feasibility to be exfoliated from the corresponding bulk. Secondly, electronic and optical properties have been systematically investigated. To be specific, the band gap of monolayer AX3 falls in the range of 1.11-1.27 eV, which is comparable with that of Si. Significantly, the electron mobility of monolayer AX3 can reach as high as ∼30 000 cm2 V-1 s-1, which is one order of magnitude higher than that of Si. Furthermore, the optical absorbance of monolayer SiAs3, SiP3 and GeAs3 exhibits high coefficients in visible light. Therefore, we believe that our designed AX3-based PV systems with power conversion efficiency of 20% can offer great potential in the application of high-performance two-dimension-based PVs.
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Affiliation(s)
- Meiqiu Xie
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.
| | - Yang Li
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.
| | - Xuhai Liu
- College of Microtechnology & Nanotechnology, Qingdao University, Qingdao 266071, China
| | - Jianping Yang
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.
| | - Hui Li
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China.
| | - Xing'ao Li
- New Energy Technology Engineering Laboratory of Jiangsu Province & School of Science, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, China. .,School of Science, Zhejiang University of Science and Technology, Hangzhou 310023, China
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Singh J, Jakhar M, Kumar A. Stability, optoelectronic and thermal properties of two-dimensional Janus α-Te 2S. NANOTECHNOLOGY 2022; 33:215405. [PMID: 35158350 DOI: 10.1088/1361-6528/ac54e1] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2022] [Accepted: 02/14/2022] [Indexed: 06/14/2023]
Abstract
Motivated by recent progress in the two-dimensional (2D) materials of group VI elements and their experimental fabrication, we have investigated the stability, optoelectronic and thermal properties of Janusα-Te2S monolayer using first-principles calculations. The phonon dispersion and MD simulations confirm its dynamical and thermal stability. The moderate band gap (∼1.5 eV), ultrahigh carrier mobility (∼103cm2V-1s-1), small exciton binding energy (0.26 eV), broad optical absorption range and charge carrier separation ability due to potential difference (ΔV = 1.07 eV) on two surfaces of Janusα-Te2S monolayer makes it a promising candidate for solar energy conversion. We propose various type-II heterostructures consisting of Janusα-Te2S and other transition metal dichalcogenides for solar cell applications. The calculated power conversion efficiencies of the proposed heterostructures, i.e.α-Te2S/T-PdS2,α-Te2S/BP andα-Te2S/H-MoS2are ∼21%, ∼19% and 18%, respectively. Also, the ultralow value of lattice thermal conductivity (1.16 W m-1K-1) of Janusα-Te2S makes it a promising material for the fabrication of next-generation thermal energy conversion devices.
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Affiliation(s)
- Jaspreet Singh
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
| | - Mukesh Jakhar
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
| | - Ashok Kumar
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
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Enhanced Efficiency of Dye-Sensitized Solar Cells Based on Polymer-Assisted Dispersion of Platinum Nanoparticles/Carbon Nanotubes Nanohybrid Films as FTO-Free Counter Electrodes. Polymers (Basel) 2021; 13:polym13183103. [PMID: 34578004 PMCID: PMC8469940 DOI: 10.3390/polym13183103] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/26/2021] [Revised: 09/09/2021] [Accepted: 09/13/2021] [Indexed: 11/26/2022] Open
Abstract
In this study, polymer-assisted dispersants are used to stabilize the nanohybrids of platinum nanoparticles (PtNPs)/carbon nanotubes (CNTs) through non-covalent bond forces. These dispersants aim to replace the florine-doped tin oxide (FTO) glass in traditional dye-sensitized solar cells (DSSCs) as counter electrodes. The large specific surface area, high conductivity, and redox potential of PtNPs/CNT nanohybrids are used as the basis to utilize them as the counter electrode material to fabricate a dye-sensitized solar cell. The conductivity results indicate that the resistance of the PtNP/CNT nanohybrid film can be reduced to 7.25 Ω/sq. When carbon nanotubes are mixed with platinum nanoparticles at a weight ratio of 5/1, the photoelectric conversion efficiency of DSSCs can reach 6.28%. When using the FTO-containing substrate as the counter electrode, its conversion efficiency indicates that the micro-/nano-hybrid material formed by PtNPs/CNTs also exhibits an excellent photoelectric conversion efficiency (8.45%) on the traditional FTO substrate. Further, a large-area dye-sensitive cell is fabricated, showing that an 8 cm × 8 cm cell has a conversion efficiency of 7.95%. Therefore, the traditional Pt counter electrode can be replaced with a PtNP/CNT nanohybrid film, which both provides dye-sensitive cells with a high photoelectric conversion efficiency and reduces costs.
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