Pressure-Induced Enhanced Optical Absorption in Sulvanite Compound Cu3TaX4 (X = S, Se, and Te): An ab Initio Study

A Thorough Investigation of Electronic, Optical, Mechanical, and Thermodynamic Properties of Stable Glasslike Sodium Germanate under Compressive Hydrostatic Pressure: Ab Initio Study

In this paper, we have tried to elucidate the variation of structural, electronic, and thermodynamic properties of glasslike Na₂GeO₃ under compressive isotropic pressure within a framework of density functional theory (DFT). The result shows stable structural (orthorhombic → tetragonal) and electronic (indirect → direct) phase transitions at P ∼ 20 GPa. The electronic band gap transition plays a key role in the enhancement of optical properties. The results of the thermodynamic properties have shown that Na₂GeO₃ follows Debye's low-temperature specific heat law and the classical thermodynamic of the Dulong-Petit law at high temperature. The pressure sensitivity of the electronic properties led us to compute the piezoelectric tensor (both in relaxed and clamped ions). We have observed significant electric responses in the form of a piezoelectric coefficient under applied pressure. This property suggested that Na₂GeO₃ could be a potential material for energy harvest in future energy-efficient devices. As expected, Na₂GeO₃ becomes harder and harder under compressive pressure up to the phase transition pressure (∼20 GPa) which can be read from Pugh's ratio (k_H) > 1.75, however, at pressures above 20 GPa k_H < 1.75, which may be due to the formation of fractures at high pressure.

Engineering of Hydrogenated (6,0) Single-Walled Carbon Nanotube under Applied Uniaxial Stress: A DFT-1/2 and Molecular Dynamics Study

Herein, we systematically studied the electronic, optical, and mechanical properties of a hydrogenated (6,0) single-walled carbon nanotube [(6,0) h-SWCNT] under applied uniaxial stress from first-principles density functional theory (DFT) and molecular dynamics (MD) simulation. We have applied the uniaxial stress range from -18 to 22 GPa on the (6,0) h-SWCNT (- sign indicates compressive and + indicates tensile stress) along the tube axes. Our system was found to be an indirect semiconductor (Γ-Δ), with a band gap value of ∼0.77 eV within the linear combination of atomic orbitals (LCAO) method using a GGA-1/2 exchange-correlation approximation. The band gap for (6,0) h-SWCNT significantly varies with the application of stress. The indirect to direct band gap transition was observed under compressive stress (-14 GPa). The strained (6,0) h-SWCNT showed a strong optical absorption in the infrared region. Application of external stress enhanced the optically active region from infrared to Vis with maximum intensity within the Vis-IR region, making it a promising candidate for optoelectronic devices. Ab initio molecular dynamics (AIMD) simulation has been used to study the elastic properties of the (6,0) h-SWCNT which has a strong influence under applied stress.