Hybrid Device of Blue GaN Light-Emitting Diodes and Organic Light-Emitting Diodes with Color Tunability for Smart Lighting Sources

Alternating current electroluminescence devices: recent advances and functional applications

Wearable smart devices and visualisation sensors based on alternating current electroluminescence (ACEL) have received considerable attention in recent years. Due to the unique properties of ACEL devices, such as high mechanical strength, adaptability to complex environments, and no need for energy level matching, ACEL is suitable for multifunctional applications and visualisation sensing platforms. This review comprehensively outlines the latest developments in ACEL devices, starting with an analysis of the mechanism, classification, and optimisation strategies of ACEL. It introduces the functional applications of ACEL in multicolour displays, high-durability displays, stretchable and wearable displays, and autonomous function displays. Particularly, it emphasises the research progress of ACEL in sensory displays under interactive conditions such as liquid sensing, environmental factor sensing, kinetic energy sensing, and biosensing. Finally, it forecasts the challenges and new opportunities faced by future functional and interactive ACEL devices in fields such as artificial intelligence, smart robotics, and human-computer interaction.

Self-regulation of light emission of an AlGaInP quantum well diode

When an AlGaInP quantum well (QW) diode is biased with a forward voltage and illuminated with an external shorter-wavelength light beam, the diode is in a superposition state of both light emission and detection. The two different states take place simultaneously, and both the injected current and the generated photocurrent begin to mix. Here, we make use of this intriguing effect and integrate an AlGaInP QW diode with a programmed circuit. The AlGaInP QW diode with the dominant emission peak wavelength centered around 629.5 nm is excited by a 620-nm red-light source. The photocurrent is then extracted as a feedback signal to regulate the light emission of the QW diode in real time without an external or monolithically integrated photodetector, paving a feasible way to autonomously adjust the brightness of the QW diode for intelligent illumination in response to changes in the environmental light condition.

Deposition Mechanism and Properties of Plasma-Enhanced Atomic Layer Deposited Gallium Nitride Films with Different Substrate Temperatures

Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG) and NH₃ plasma. The effect of substrate temperature on growth mechanism and properties of the PEALD GaN films is systematically studied. The experimental results show that the self-limiting surface chemical reactions occur in the substrate temperature range of 250-350 °C. The substrate temperature strongly affects the crystalline structure, which is nearly amorphous at below 250 °C, with (100) as the major phase at below 400 °C, and (002) dominated at higher temperatures. The X-ray photoelectron spectroscopy spectra reveals the unintentional oxygen incorporation into the films in the forms of Ga₂O₃ and Ga-OH. The amount of Ga-O component decreases, whereas the Ga-Ga component rapidly increases at 400 and 450 °C, due to the decomposition of TMG. The substrate temperature of 350 °C with the highest amount of Ga-N bonds is, therefore, considered the optimum substrate temperature. This study is helpful for improving the quality of PEALD GaN films.

Vertical stack integration of blue and yellow InGaN micro-LED arrays for display and wavelength division multiplexing visible light communication applications

In this work, we demonstrated a convenient and reliable method to realize the vertical stack integration of the blue and yellow InGaN micro-LED arrays. The standard white and color-tunable micro-light sources can be achieved by adjusting the current densities injection of the micro-LEDs. The spectra cover violet, standard white, cyan, etc., showing an excellent color-tunable property. And the mixed standard white light can be separated into red-green-blue three primary colors through the color filters to realize full-color micro-LED display with a color gamut of 75% NTSC. Besides, the communication capability of the integrated micro-LED arrays as visible light communication (VLC) transmitters is demonstrated with a maximum total data rate of 2.35 Gbps in the wavelength division multiplexing (WDM) experimental set-up using orthogonal frequency division multiplexing modulation. In addition, a data rate of 250 Mbps is also realized with the standard white light using on-off keying (OOK) modulation. This integrated device shows great potential in full-color micro-LED display, color-tunable micro-light sources, and high-speed WDM VLC multifunctional applications.