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Gantumur M, Hossain MI, Shahiduzzaman M, Tamang A, Rafij JH, Shahinuzzaman M, Thi Cam Tu H, Nakano M, Karakawa M, Ohdaira K, AlMohamadi H, Ibrahim MA, Sopian K, Akhtaruzzaman M, Nunzi JM, Taima T. Tungsten-Doped ZnO as an Electron Transport Layer for Perovskite Solar Cells: Enhancing Efficiency and Stability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:36255-36271. [PMID: 38959094 DOI: 10.1021/acsami.4c03591] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/05/2024]
Abstract
This study delves into enhancing the efficiency and stability of perovskite solar cells (PSCs) by optimizing the surface morphologies and optoelectronic properties of the electron transport layer (ETL) using tungsten (W) doping in zinc oxide (ZnO). Through a unique green synthesis process and spin-coating technique, W-doped ZnO films were prepared, exhibiting improved electrical conductivity and reduced interface defects between the ETL and perovskite layers, thus facilitating efficient electron transfer at the interface. High-quality PSCs with superior ETL demonstrated a substantial 30% increase in power conversion efficiency (PCE) compared to those employing pristine ZnO ETL. These solar cells retained over 70% of their initial PCE after 4000 h of moisture exposure, surpassing reference PSCs by 50% PCE over this period. Advanced numerical multiphysics solvers, employing finite-difference time-domain (FDTD) and finite element method (FEM) techniques, were utilized to elucidate the underlying optoelectrical characteristics of the PSCs, with simulated results corroborating experimental findings. The study concludes with a thorough discussion on charge transport and recombination mechanisms, providing insights into the enhanced performance and stability achieved through W-doped ZnO ETL optimization.
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Affiliation(s)
- Munkhtuul Gantumur
- Graduate School of Frontier Science Initiative, Kanazawa University, Kakuma, Kanazawa 920-1292, Japan
| | - Mohammad Ismail Hossain
- Department of Electrical and Computer Engineering, University of California, Davis, California 95616, United States
- Research and Development, Meta Materials Inc. (META), Pleasanton, California 94588, United States
| | - Md Shahiduzzaman
- Nanomaterials Research Institute, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan
- Graduate School of Natural Science and Technology, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan
| | - Asman Tamang
- Research and Development, Meta Materials Inc. (META), Pleasanton, California 94588, United States
| | - Junayed Hossain Rafij
- Department of Electrical and Electronics Engineering, Universiti Tenaga Nasional(@The Energy University), Kajang, Selangor 43000, Malaysia
| | - Md Shahinuzzaman
- Institute of Energy Research and Development, Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhanmondi, Dhaka 1205, Bangladesh
| | - Huynh Thi Cam Tu
- Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
| | - Masahiro Nakano
- Graduate School of Natural Science and Technology, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan
| | - Makoto Karakawa
- Graduate School of Frontier Science Initiative, Kanazawa University, Kakuma, Kanazawa 920-1292, Japan
- Nanomaterials Research Institute, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan
- Graduate School of Natural Science and Technology, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan
| | - Keisuke Ohdaira
- Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292, Japan
| | - Hamad AlMohamadi
- Department of Chemical Engineering, Faculty of Engineering, Islamic University of Madinah, Madinah 42351, Saudi Arabia
- Sustainable Research Center, Islamic University of Madinah, Madinah 42351, Saudi Arabia
| | - Mohd Adib Ibrahim
- Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Selangor, Malaysia
| | - Kamaruzzaman Sopian
- Department of Mechanical Engineering, Universiti Teknologi Petronas, Seri Iskandar 32610, Malaysia
| | - Md Akhtaruzzaman
- Sustainable Research Center, Islamic University of Madinah, Madinah 42351, Saudi Arabia
- The Department of Chemistry, Faculty of Science, The Islamic University of Madinah, Madinah, Abo Bakr Al Siddiq, Al Jamiah, Madinah 42351, Saudi Arabia
| | - Jean Michel Nunzi
- Nanomaterials Research Institute, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan
- Department of Physics, Engineering Physics and Astronomy, Queens University, Kingston K7L 3N6, Ontario, Canada
| | - Tetsuya Taima
- Graduate School of Frontier Science Initiative, Kanazawa University, Kakuma, Kanazawa 920-1292, Japan
- Nanomaterials Research Institute, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan
- Graduate School of Natural Science and Technology, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan
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Marques N, Jana S, Mendes MJ, Águas H, Martins R, Panigrahi S. Surface modification of halide perovskite using EDTA-complexed SnO 2 as electron transport layer in high performance solar cells. RSC Adv 2024; 14:12397-12406. [PMID: 38633492 PMCID: PMC11022184 DOI: 10.1039/d3ra08900b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Accepted: 04/08/2024] [Indexed: 04/19/2024] Open
Abstract
The long-term performance of metal halide perovskite solar cells (PSCs) can be significantly improved by tuning the surface characteristics of the perovskite layers. Herein, low-temperature-processed ethylenediaminetetraacetic acid (EDTA)-complexed SnO2 (E-SnO2) is successfully employed as an electron transport layer (ETL) in PSCs, enhancing the efficiency and stability of the devices. The effects of EDTA treatment on SnO2 are investigated for different concentrations: comparing the solar cells' response with 15%-2.5% SnO2 and E-SnO2 based ETLs, and it was found that 7.5% E-SnO2 provided the best results. The improved surface properties of the perovskite layer on E-SnO2 are attributed to the presence of small amount of PbI2 which contributes to passivate the defects at the grain boundaries and films' surface. However, for the excess PbI2 based devices, photocurrent dropped, which could be attributed to the generation of shallow traps due to excess PbI2. The better alignment between the Fermi level of E-SnO2 and the conduction band of perovskite is another favorable aspect that enables increased open-circuit potential (VOC), from 0.82 V to 1.015 V, yielding a stabilized power conversion efficiency of 15.51%. This complex ETL strategy presented here demonstrates the enormous potential of E-SnO2 as selective contact to enhance the perovskite layer properties and thereby allow stable and high-efficiency PSCs.
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Affiliation(s)
- Nuno Marques
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA Campus de Caparica, Caparica 2829-516 Portugal
| | - Santanu Jana
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA Campus de Caparica, Caparica 2829-516 Portugal
| | - Manuel J Mendes
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA Campus de Caparica, Caparica 2829-516 Portugal
| | - Hugo Águas
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA Campus de Caparica, Caparica 2829-516 Portugal
| | - Rodrigo Martins
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA Campus de Caparica, Caparica 2829-516 Portugal
| | - Shrabani Panigrahi
- CENIMAT|i3N, Department of Materials Science, School of Science and Technology, NOVA University Lisbon and CEMOP/UNINOVA Campus de Caparica, Caparica 2829-516 Portugal
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Hattori N, Vafaei S, Narita R, Nagaya N, Yoshida N, Sugiura T, Manseki K. Growth and Dispersion Control of SnO 2 Nanocrystals Employing an Amino Acid Ester Hydrochloride in Solution Synthesis: Microstructures and Photovoltaic Applications. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7649. [PMID: 38138791 PMCID: PMC10744412 DOI: 10.3390/ma16247649] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Revised: 12/01/2023] [Accepted: 12/06/2023] [Indexed: 12/24/2023]
Abstract
Tin oxide (SnO2) is a technologically important semiconductor with versatile applications. In particular, attention is being paid to nanostructured SnO2 materials for use as a part of the constituents in perovskite solar cells (PSCs), an emerging renewable energy technology. This is mainly because SnO2 has high electron mobility, making it favorable for use in the electron transport layer (ETL) in these devices, in which SnO2 thin films play a role in extracting electrons from the adjacent light-absorber, i.e., lead halide perovskite compounds. Investigation of SnO2 solution synthesis under diverse reaction conditions is crucial in order to lay the foundation for the cost-effective production of PSCs. This research focuses on the facile catalyst-free synthesis of single-nanometer-scale SnO2 nanocrystals employing an aromatic organic ligand (as the structure-directing agent) and Sn(IV) salt in an aqueous solution. Most notably, the use of an aromatic amino acid ester hydrochloride salt-i.e., phenylalanine methyl ester hydrochloride (denoted as L hereafter)-allowed us to obtain an aqueous precursor solution containing a higher concentration of ligand L, in addition to facilitating the growth of SnO2 nanoparticles as small as 3 nm with a narrow size distribution, which were analyzed by means of high-resolution transmission electron microscopy (HR-TEM). Moreover, the nanoparticles were proved to be crystallized and uniformly dispersed in the reaction mixture. The environmentally benign, ethanol-based SnO2 nanofluids stabilized with the capping agent L for the Sn(IV) ions were also successfully obtained and spin-coated to produce a SnO2 nanoparticle film to serve as an ETL for PSCs. Several SnO2 ETLs that were created by varying the temperature of nanoparticle synthesis were examined to gain insight into the performance of PSCs. It is thought that reaction conditions that utilize high concentrations of ligand L to control the growth and dispersion of SnO2 nanoparticles could serve as useful criteria for designing SnO2 ETLs, since hydrochloride salt L can offer significant potential as a functional compound by controlling the microstructures of individual SnO2 nanoparticles and the self-assembly process to form nanostructured SnO2 thin films.
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Affiliation(s)
- Nagisa Hattori
- The Graduate School of Natural Science and Technology, Gifu University, Yanagido 1-1, Gifu 501-1193, Japan (K.M.)
| | - Saeid Vafaei
- Mechanical Engineering Department, Bradley University, 1501 West Bradley Avenue, Peoria, IL 61625, USA
| | - Ryoki Narita
- The Graduate School of Natural Science and Technology, Gifu University, Yanagido 1-1, Gifu 501-1193, Japan (K.M.)
| | - Naohide Nagaya
- The Graduate School of Natural Science and Technology, Gifu University, Yanagido 1-1, Gifu 501-1193, Japan (K.M.)
| | - Norimitsu Yoshida
- The Graduate School of Natural Science and Technology, Gifu University, Yanagido 1-1, Gifu 501-1193, Japan (K.M.)
| | - Takashi Sugiura
- The Graduate School of Natural Science and Technology, Gifu University, Yanagido 1-1, Gifu 501-1193, Japan (K.M.)
| | - Kazuhiro Manseki
- The Graduate School of Natural Science and Technology, Gifu University, Yanagido 1-1, Gifu 501-1193, Japan (K.M.)
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Zainal Abidin NA, Arith F, Noorasid NS, Sarkawi H, Mustafa AN, Safie NE, Shah ASM, Azam MA, Chelvanathan P, Amin N. Dopant engineering for ZnO electron transport layer towards efficient perovskite solar cells. RSC Adv 2023; 13:33797-33819. [PMID: 38020037 PMCID: PMC10654892 DOI: 10.1039/d3ra04823c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 10/30/2023] [Indexed: 12/01/2023] Open
Abstract
The conventional electron transport layer (ETL) TiO2 has been widely used in perovskite solar cells (PSCs), which have produced exceptional power conversion efficiencies (PCE), allowing the technology to be highly regarded and propitious. Nevertheless, the recent high demand for energy harvesters in wearable electronics, aerospace, and building integration has led to the need for flexible solar cells. However, the conventional TiO2 ETL layer is less preferred, where a crystallization process at a temperature as high as 450 °C is required, which degrades the plastic substrate. Zinc oxide nanorods (ZnO NRs) as a simple and low-cost fabrication material may fulfil the need as an ETL, but they still suffer from low PCE due to atomic defect vacancy. To delve into the issue, several dopants have been reviewed as an additive to passivate or substitute the Zn2+ vacancies, thus enhancing the charge transport mechanism. This work thereby unravels and provides a clear insight into dopant engineering in ZnO NRs ETL for PSC.
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Affiliation(s)
- Nurul Aliyah Zainal Abidin
- Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - Faiz Arith
- Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - N Syamimi Noorasid
- Faculty of Electronic and Computer Engineering, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - Hafez Sarkawi
- Faculty of Electrical and Electronic Engineering Technology, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - A Nizamuddin Mustafa
- Faculty of Electrical and Electronic Engineering Technology, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
- Department of Materials, Faculty of Engineering, Imperial College London London SW7 2AZ UK
| | - N E Safie
- Faculty of Electrical and Electronic Engineering Technology, Universiti Teknikal Malaysia Melaka Hang Tuah Jaya, Durian Tunggal 76100 Melaka Malaysia
| | - A S Mohd Shah
- Department of Electrical Engineering, College of Engineering, Universiti Malaysia Pahang Lebuhraya Tun Razak, Gambang Kuantan Pahang 26300 Malaysia
| | - M A Azam
- Faculty of Manufacturing Engineering, Universiti Teknikal Malaysia Melaka 76100 Durian Tunggal Melaka Malaysia
- Center for Promotion of Educational Innovation, Shibaura Institute of Technology 3-7-5 Toyosu, Koto-ku Tokyo 135-8548 Japan
| | | | - Nowshad Amin
- Department of Electrical and Electronic Engineering, University of Science Engineering and Technology (USTC) Foy's Lake Chattogram 4202 Bangladesh
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