Tabletop Fabrication of High-Performance MoS2 Field-Effect Transistors

NaCl-Assisted Temperature-Dependent Controllable Growth of Large-Area MoS2 Crystals Using Confined-Space CVD

Due to its semiconducting nature, controlled growth of large-area chemical vapor deposition (CVD)-grown two-dimensional (2D) molybdenum disulfide (MoS₂) has a lot of potential applications in photodetectors, sensors, and optoelectronics. Yet the controllable, large-area, and cost-effective growth of highly crystalline MoS₂ remains a challenge. Confined-space CVD is a very promising method for the growth of highly crystalline MoS₂ in a controlled manner. Herein, we report the large-scale growth of MoS₂ with different morphologies using NaCl as a seeding promoter for confined-space CVD. Changes in the morphologies of MoS₂ are reported by variation in the amount of seeding promoter, precursor ratio, and the growth temperature. Furthermore, the properties of the grown MoS₂ are analyzed using optical microscopy, scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDX), and atomic force microscopy (AFM). The electrical properties of the CVD-grown MoS₂ show promising performance from fabricated field-effect transistors. This work provides new insight into the growth of large-area MoS₂ and opens the way for its various optoelectronic and electronic applications.