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Sharma R, Nameirakpam H, Belinchón DM, Sharma P, Noumbe U, Belotcerkovtceva D, Berggren E, Vretenár V, Vanco L, Matko M, Biroju RK, Satapathi S, Edvinsson T, Lindblad A, Kamalakar MV. Large-Scale Direct Growth of Monolayer MoS 2 on Patterned Graphene for van der Waals Ultrafast Photoactive Circuits. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38711-38722. [PMID: 38995218 DOI: 10.1021/acsami.4c07028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2024]
Abstract
Two-dimensional (2D) van der Waals heterostructures combine the distinct properties of individual 2D materials, resulting in metamaterials, ideal for emergent electronic, optoelectronic, and spintronic phenomena. A significant challenge in harnessing these properties for future hybrid circuits is their large-scale realization and integration into graphene interconnects. In this work, we demonstrate the direct growth of molybdenum disulfide (MoS2) crystals on patterned graphene channels. By enhancing control over vapor transport through a confined space chemical vapor deposition growth technique, we achieve the preferential deposition of monolayer MoS2 crystals on monolayer graphene. Atomic resolution scanning transmission electron microscopy reveals the high structural integrity of the heterostructures. Through in-depth spectroscopic characterization, we unveil charge transfer in Graphene/MoS2, with MoS2 introducing p-type doping to graphene, as confirmed by our electrical measurements. Photoconductivity characterization shows that photoactive regions can be locally created in graphene channels covered by MoS2 layers. Time-resolved ultrafast transient absorption (TA) spectroscopy reveals accelerated charge decay kinetics in Graphene/MoS2 heterostructures compared to standalone MoS2 and upconversion for below band gap excitation conditions. Our proof-of-concept results pave the way for the direct growth of van der Waals heterostructure circuits with significant implications for ultrafast photoactive nanoelectronics and optospintronic applications.
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Affiliation(s)
- Rahul Sharma
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - Henry Nameirakpam
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | | | - Prince Sharma
- Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Ulrich Noumbe
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Daria Belotcerkovtceva
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - Elin Berggren
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - Viliam Vretenár
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
| | - Lubomir Vanco
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
| | - Matus Matko
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
| | - Ravi K Biroju
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
- School of Advanced Sciences-Division of Physics, Vellore Institute of Technology, Vandalur-Kelambakkam Road Chennai, Chennai, Tamil Nadu 600127, India
| | - Soumitra Satapathi
- Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Tomas Edvinsson
- Department of Materials Science and Engineering, Uppsala University, Box 35, Uppsala SE-751 03, Sweden
| | - Andreas Lindblad
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
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Yan W, Zhang Z, Wan J, Meng L, Li XA. Synthesis of two-dimensional MoO2 nanoplatelets and its multistep sulfurization into MoS2. J Chem Phys 2024; 160:054707. [PMID: 38341707 DOI: 10.1063/5.0190447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2023] [Accepted: 01/16/2024] [Indexed: 02/13/2024] Open
Abstract
To control the growth of layered two-dimensional structures, such as transition metal dichalcogenide materials or heterostructures, understanding the growth mechanism is crucial. Here, we report the synthesis of ultra-thin MoO2 nanoplatelets through the sublimation of MoO3. Rhombus MoO2 nanoplatelets with the P21/c space group were characterized using various microscopic and spectroscopic techniques. Introducing sulfur sources into the chemical vapor deposition system also leads to the formation of monoclinic MoO2 nanoflakes due to the incomplete sulfurization of MoO3. With a gradual increase in the vapor concentration of sulfur, MoO3 undergoes stepwise reduction into MoS2/MoO2 and eventually into MoS2. Additionally, utilizing MoO2 as a precursor for Mo sources enables the formation of monolayer MoS2 single crystals. This work provides an effective approach for growing MoO2 nanoplatelets and elucidates the mechanism behind the stepwise sulfurization of MoO3.
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Affiliation(s)
- Wei Yan
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zhi Zhang
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jihong Wan
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Lan Meng
- College of Electronic and Optical Engineering and College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xing-Ao Li
- School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
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