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Pham PV, Mai TH, Do HB, Vasundhara M, Nguyen VH, Nguyen T, Bui HV, Dao VD, Gupta RK, Ponnusamy VK, Park JH. Layer-by-layer thinning of two-dimensional materials. Chem Soc Rev 2024; 53:5190-5226. [PMID: 38586901 DOI: 10.1039/d3cs00817g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
Etching technology - one of the representative modern semiconductor device makers - serves as a broad descriptor for the process of removing material from the surfaces of various materials, whether partially or entirely. Meanwhile, thinning technology represents a novel and highly specialized approach within the realm of etching technology. It indicates the importance of achieving an exceptionally sophisticated and precise removal of material, layer-by-layer, at the nanoscale. Notably, thinning technology has gained substantial momentum, particularly in top-down strategies aimed at pushing the frontiers of nano-worlds. This rapid development in thinning technology has generated substantial interest among researchers from diverse backgrounds, including those in the fields of chemistry, physics, and engineering. Precisely and expertly controlling the layer numbers of 2D materials through the thinning procedure has been considered as a crucial step. This is because the thinning processes lead to variations in the electrical and optical characteristics. In this comprehensive review, the strategies for top-down thinning of representative 2D materials (e.g., graphene, black phosphorus, MoS2, h-BN, WS2, MoSe2, and WSe2) based on conventional plasma-assisted thinning, integrated cyclic plasma-assisted thinning, laser-assisted thinning, metal-assisted splitting, and layer-resolved splitting are covered in detail, along with their mechanisms and benefits. Additionally, this review further explores the latest advancements in terms of the potential advantages of semiconductor devices achieved by top-down 2D material thinning procedures.
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Affiliation(s)
- Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Huy-Binh Do
- Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Thu Duc 700000, Vietnam
| | - M Vasundhara
- Polymers and Functional Materials Department, CSIR-Indian Institute of Chemical Technology, Tarnaka, Hyderabad 500007, India
| | - Van-Huy Nguyen
- Centre for Herbal Pharmacology and Environmental Sustainability, Chettinad Hospital and Research Institute, Chettinad Academy of Research and Education, Kelambakkam-603103, Tamil Nadu, India
| | - Trieu Nguyen
- Shared Research Facilities, West Virginia University, Morgantown, WV 26506, USA
| | - Hao Van Bui
- Faculty of Materials Science and Engineering and Faculty of Electrical and Electronic Engineering, Phenikaa University, Hanoi 12116, Vietnam
| | - Van-Duong Dao
- Faculty of Biotechnology, Chemistry, and Environmental Engineering, Phenikaa University, Hanoi 100000, Vietnam
| | - Ram K Gupta
- Department of Chemistry, Kansas Polymer Research Center, Pittsburg State University, Pittsburg, KS-66762, USA
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry, Kaohsiung Medical University, Kaohsiung 807, Taiwan.
- Research Center for Precision Environmental Medicine, Kaohsiung Medical University, Kaohsiung 807, Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital, Kaohsiung 807, Taiwan
- Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea.
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Wang X, Chen A, Wu X, Zhang J, Dong J, Zhang L. Synthesis and Modulation of Low-Dimensional Transition Metal Chalcogenide Materials via Atomic Substitution. NANO-MICRO LETTERS 2024; 16:163. [PMID: 38546814 PMCID: PMC10978568 DOI: 10.1007/s40820-024-01378-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 02/17/2024] [Indexed: 04/01/2024]
Abstract
In recent years, low-dimensional transition metal chalcogenide (TMC) materials have garnered growing research attention due to their superior electronic, optical, and catalytic properties compared to their bulk counterparts. The controllable synthesis and manipulation of these materials are crucial for tailoring their properties and unlocking their full potential in various applications. In this context, the atomic substitution method has emerged as a favorable approach. It involves the replacement of specific atoms within TMC structures with other elements and possesses the capability to regulate the compositions finely, crystal structures, and inherent properties of the resulting materials. In this review, we present a comprehensive overview on various strategies of atomic substitution employed in the synthesis of zero-dimensional, one-dimensional and two-dimensional TMC materials. The effects of substituting elements, substitution ratios, and substitution positions on the structures and morphologies of resulting material are discussed. The enhanced electrocatalytic performance and photovoltaic properties of the obtained materials are also provided, emphasizing the role of atomic substitution in achieving these advancements. Finally, challenges and future prospects in the field of atomic substitution for fabricating low-dimensional TMC materials are summarized.
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Affiliation(s)
- Xuan Wang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Akang Chen
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - XinLei Wu
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jiatao Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
| | - Leining Zhang
- Key Laboratory of Cluster Science, Ministry of Education of China, Beijing Key Laboratory of Photoelectronic and Electrophonic Conversion Materials, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
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Chen M, Chai J, Wu J, Zheng H, Wu WY, Lourembam J, Lin M, Kim JY, Kim J, Ang KW, Ng MF, Medina H, Tong SW, Chi D. Sublimation-based wafer-scale monolayer WS 2 formation via self-limited thinning of few-layer WS 2. NANOSCALE HORIZONS 2023; 9:132-142. [PMID: 37850320 DOI: 10.1039/d3nh00358b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
Atomically-thin monolayer WS2 is a promising channel material for next-generation Moore's nanoelectronics owing to its high theoretical room temperature electron mobility and immunity to short channel effect. The high photoluminescence (PL) quantum yield of the monolayer WS2 also makes it highly promising for future high-performance optoelectronics. However, the difficulty in strictly growing monolayer WS2, due to its non-self-limiting growth mechanism, may hinder its industrial development because of the uncontrollable growth kinetics in attaining the high uniformity in thickness and property on the wafer-scale. In this study, we report a scalable process to achieve a 4 inch wafer-scale fully-covered strictly monolayer WS2 by applying the in situ self-limited thinning of multilayer WS2 formed by sulfurization of WOx films. Through a pulsed supply of sulfur precursor vapor under a continuous H2 flow, the self-limited thinning process can effectively trim down the overgrown multilayer WS2 to the monolayer limit without damaging the remaining bottom WS2 monolayer. Density functional theory (DFT) calculations reveal that the self-limited thinning arises from the thermodynamic instability of the WS2 top layers as opposed to a stable bottom monolayer WS2 on sapphire above a vacuum sublimation temperature of WS2. The self-limited thinning approach overcomes the intrinsic limitation of conventional vapor-based growth methods in preventing the 2nd layer WS2 domain nucleation/growth. It also offers additional advantages, such as scalability, simplicity, and possibility for batch processing, thus opening up a new avenue to develop a manufacturing-viable growth technology for the preparation of a strictly-monolayer WS2 on the wafer-scale.
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Affiliation(s)
- Mingxi Chen
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Jianwei Chai
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Jing Wu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Haofei Zheng
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Republic of Singapore
| | - Wen-Ya Wu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - James Lourembam
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Ming Lin
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Jun-Young Kim
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Jaewon Kim
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Kah-Wee Ang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Republic of Singapore
| | - Man-Fai Ng
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore
| | - Henry Medina
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Shi Wun Tong
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
| | - Dongzhi Chi
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore.
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Laser printed two-dimensional transition metal dichalcogenides. Sci Rep 2021; 11:5211. [PMID: 33664284 PMCID: PMC7933426 DOI: 10.1038/s41598-021-81829-w] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2020] [Accepted: 01/11/2021] [Indexed: 11/13/2022] Open
Abstract
Laser processing is a highly versatile technique for the post-synthesis treatment and modification of transition metal dichalcogenides (TMDCs). However, to date, TMDCs synthesis typically relies on large area CVD growth and lithographic post-processing for nanodevice fabrication, thus relying heavily on complex, capital intensive, vacuum-based processing environments and fabrication tools. This inflexibility necessarily restricts the development of facile, fast, very low-cost synthesis protocols. Here we show that direct, spatially selective synthesis of 2D-TMDCs devices that exhibit excellent electrical, Raman and photoluminescence properties can be realized using laser printing under ambient conditions with minimal lithographic or thermal overheads. Our simple, elegant process can be scaled via conventional laser printing approaches including spatial light modulation and digital light engines to enable mass production protocols such as roll-to-roll processing.
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Abbas OA, Zeimpekis I, Wang H, Lewis AH, Sessions NP, Ebert M, Aspiotis N, Huang CC, Hewak D, Mailis S, Sazio P. Solution-Based Synthesis of Few-Layer WS 2 Large Area Continuous Films for Electronic Applications. Sci Rep 2020; 10:1696. [PMID: 32015500 PMCID: PMC6997350 DOI: 10.1038/s41598-020-58694-0] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2019] [Accepted: 01/14/2020] [Indexed: 11/09/2022] Open
Abstract
Unlike MoS2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH4)2WS4) films by two-step high temperature annealing without additional sulphurization. This facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS2 films are highly crystalline and stoichiometric. Finally, WS2 films as-deposited on SiO2/Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.
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Affiliation(s)
- Omar A Abbas
- Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Ioannis Zeimpekis
- Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - He Wang
- National Centre for Advanced Tribology, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Adam H Lewis
- Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Neil P Sessions
- Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Martin Ebert
- School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Nikolaos Aspiotis
- Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Chung-Che Huang
- Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Daniel Hewak
- Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom
| | - Sakellaris Mailis
- Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom
- Skolkovo Institute of Science and Technology Novaya St., 100, Skolkovo, 143025, Russian Federation
| | - Pier Sazio
- Optoelectronics Research Centre, University of Southampton, Southampton, SO17 1BJ, United Kingdom.
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Williams AT, Donno R, Tirelli N, Dryfe RAW. Biofunctional few-layer metal dichalcogenides and related heterostructures produced by direct aqueous exfoliation using phospholipids. RSC Adv 2019; 9:37061-37066. [PMID: 35539078 PMCID: PMC9075593 DOI: 10.1039/c9ra07764b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2019] [Accepted: 11/06/2019] [Indexed: 11/21/2022] Open
Abstract
We report a novel, inexpensive and green method for preparing aqueous dispersions of various biofunctional transition-metal dichalcogenides (MoS2, WS2, TiS2 and MoSe2) and their related heterostructures directly via ultrasonic exfoliation mediated by the presence of phospholipids. The dispersions predominantly consist of few-layer flakes coated with 1,2-dioleoyl-sn-glycero-3-phosphocholine (DOPC), as confirmed by Raman, photoluminescence and X-ray photoelectron spectroscopies. The phospholipid coating renders the flakes biofunctional, which coupled with the unique properties of transition-metal dichalcogenides and their heterostructures, suggests this method will have great potential in biological applications. We report a method for preparing aqueous dispersions of biofunctional transition-metal dichalcogenides (MoS2, WS2, TiS2 and MoSe2) and their related heterostructures directly via ultrasonic exfoliation mediated by the presence of phospholipids.![]()
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Affiliation(s)
| | - Roberto Donno
- Laboratory of Polymers and Biomaterials
- Fondazione Istituto Italiano di Tecnologia
- Genoa
- Italy
| | - Nicola Tirelli
- Laboratory of Polymers and Biomaterials
- Fondazione Istituto Italiano di Tecnologia
- Genoa
- Italy
| | - Robert A. W. Dryfe
- School of Chemistry
- University of Manchester
- Manchester
- UK
- National Graphene Institute
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Wang Z, Jingjing Q, Wang X, Zhang Z, Chen Y, Huang X, Huang W. Two-dimensional light-emitting materials: preparation, properties and applications. Chem Soc Rev 2018; 47:6128-6174. [DOI: 10.1039/c8cs00332g] [Citation(s) in RCA: 132] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
We review the recent development in two-dimensional (2D) light-emitting materials and describe their preparation methods, optical/optoelectronic properties and applications.
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Affiliation(s)
- Zhiwei Wang
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
| | - Qiu Jingjing
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
| | - Xiaoshan Wang
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
| | - Zhipeng Zhang
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
| | - Yonghua Chen
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
| | - Xiao Huang
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
| | - Wei Huang
- Institute of Advanced Materials (IAM)
- Nanjing Tech University (NanjingTech)
- Nanjing 211816
- P. R. China
- Shaanxi Institute of Flexible Electronics (SIFE)
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