Scalable Mesoporous Platinum Diselenide Nanosheet Synthesis in Water

Evaluating the Hydrogen Evolution Reaction Activity of Colloidally Prepared PtSe2 and PtTe2 Catalysts in an Alkaline Medium

The hydrogen evolution reaction (HER) in alkaline electrolytes using transition metal dichalcogenides is a research area that is not tapped into. Alkaline HER (2 H 2 O + 2 e - → H 2 + O H - ${{2H}_{2}O+2{e\ }^{-}\to {H}_{2}+{OH}^{-}{\rm \ }}$ ) is harder to achieve relative to acidic HER (H + + 2 e - → H 2 ${{H}^{+}+2{e\ }^{-}\to \ {H}_{2}}$ ), this is attributed to the additional water dissociation step that occurs in basic HER to generate H+ ions. In fact, for most catalysts, their HER activity decreases tremendously when the electrolyte is changed from acidic to basic conditions. Platinum dichalcogenides, PtX2 (X=S, Se, Te), are an interesting member of transition metal dichalcogenides (TMDs) as these show an immense hybridization of the Pt d orbitals and chalcogen p orbitals because of closely correlated orbital energies. The trend in electronic properties of these materials changes drastically as the chalcogen is changed, with PtS2 reported to exhibit semi-conductor properties, PtSe2 is semi-metallic or semi-conductive, depending on the number of layers, while PtTe2 is metallic. The effect of varying the chalcogen atom on the HER activity of Pt dichalcogenides will be studied. Pt dichalcogenides have previously been prepared by direct high-temperature chalcogen deposition of Pt substrate and evaluated as electrocatalysts for HER in H2SO4. The previously employed synthesis procedures for PtX2 limit these compounds' mass production and post-synthesis treatment. In this study, we demonstrated, for the first time the preparation of PtSe2 and PtTe2 by colloidal synthesis. Colloidal synthesis offers the possibility of large-scale synthesis of materials and affords the employment of the colloids at various concentrations in ink formulation. The electrochemical HER results acquired in 1 M KOH indicate that PtTe2 has a superior HER catalytic activity to PtSe2. A potential of 108 mV for PtTe2 and 161 mV for PtSe2 is required to produce a current density of -10 mA cm-2 from these catalysts. PtTe2 has a low Tafel slope of 79 mVdec-1, indicating faster HER kinetics on PtTe2. Nonetheless, the stability of these catalysts in an alkaline medium needs to be improved to render them excellent HER electrocatalysts.

Make Selenium Reactive Again: Activating Elemental Selenium for Synthesis of Metal Selenides Ranging from Nanocrystals to Large Single Crystals

The inertness of elemental selenium is a significant obstacle in the synthesis of selenium-containing materials at low reaction temperatures. Over the years, several recipes have been developed to overcome this hurdle; however, most of the methods are associated with the use of highly toxic, expensive, and environmentally harmful reagents. As such, there is an increasing demand for the design of cheap, stable, and nontoxic reactive selenium precursors usable in the low-temperature synthesis of transition metal selenides with vast applications in nanotechnology, thermoelectrics, and superconductors. Herein, a novel synthetic route has been developed for activating elemental selenium by using a solvothermal approach. By comprehensive 77Se NMR, Raman, and infrared spectroscopies and gas chromatography-mass spectrometry, we show that the activated Se solution contained HSe-, [Se-Se]2-, and Se2- ions, as well as dialkyl selenide (R2Se) and dialkyl diselenide (R-Se-Se-R) species in dynamic equilibrium. This also corresponded to the first observation of naked Se22- in solution. The versatility of the developed Se precursor was demonstrated by the successful synthesis of (i) the polycrystalline room-temperature modification of the β-Ag2Se thermoelectric material; (ii) large single crystals of superconducting β-FeSe; (iii) CdSe nanocrystals with different particle sizes (3-10 nm); (iv) nanosheets of PtSe2; and (v) mono- and dibenzyl selenides and diselenides at room temperature. The simplicity and diversity of the developed Se activation method holds promise for applied and fundamental research.

Abnormal Seebeck Effect in Vertically Stacked 2D/2D PtSe2 /PtSe2 Homostructure

When a thermoelectric (TE) material is deposited with a secondary TE material, the total Seebeck coefficient of the stacked layer is generally represented by a parallel conductor model. Accordingly, when TE material layers of the same thickness are stacked vertically, the total Seebeck coefficient in the transverse direction may change in a single layer. Here, an abnormal Seebeck effect in a stacked two-dimensional (2D) PtSe2 /PtSe2 homostructure film, i.e., an extra in-plane Seebeck voltage is produced by wet-transfer stacking at the interface between the PtSe2 layers under a transverse temperature gradient is reported. This abnormal Seebeck effect is referred to as the interfacial Seebeck effect in stacked PtSe2 /PtSe2 homostructures. This effect is attributed to the carrier-interface interaction, and has independent characteristics in relation to carrier concentration. It is confirmed that the in-plane Seebeck coefficient increases as the number of stacked PtSe2 layers increase and observed a high Seebeck coefficient exceeding ≈188 µV K-1 at 300 K in a four-layer-stacked PtSe2 /PtSe2 homostructure.

Interface-Induced Seebeck Effect in PtSe2/PtSe2 van der Waals Homostructures

The Seebeck effect refers to the production of an electric voltage when different temperatures are applied on a conductor, and the corresponding voltage-production efficiency is represented by the Seebeck coefficient. We report a Seebeck effect: thermal generation of driving voltage from the heat flowing in a thin PtSe₂/PtSe₂ van der Waals homostructure at the interface. We refer to the effect as the interface-induced Seebeck effect. By exploiting this effect by directly attaching multilayered PtSe₂ over high-resistance PtSe₂ thin films as a hybridized single structure, we obtained the highly challenging in-plane Seebeck coefficient of the PtSe₂ films that exhibit extremely high resistances. This direct attachment further enhanced the in-plane thermal Seebeck coefficients of the PtSe₂/PtSe₂ van der Waals homostructure on sapphire substrates. Consequently, we successfully enhanced the in-plane Seebeck coefficients for the PtSe₂ (10 nm)/PtSe₂ (2 nm) homostructure approximately 42% compared to that of a pure PtSe₂ (10 nm) layer at 300 K. These findings represent a significant achievement in understanding the interface-induced Seebeck effect and provide an effective strategy for promising large-area thermoelectric energy harvesting devices using two-dimensional transition metal dichalcogenide materials, which are ideal thermoelectric platforms with high figures of merit.

Recent progress in Van der Waals 2D PtSe2

As a new member in two-dimensional (2D) transition metal dichalcogenides (TMDCs) family, platinum diselenium (PtSe₂) has many excellent properties, such as the layer-dependent band gap, high carrier mobility, high photoelectrical coupling, broadband response, etc, thus it shows good promising application in room temperature photodetectors, broadband photodetectors, transistors and other fields. Furthermore, compared with other TMDCs, PtSe₂is chemical inert in ambient, showing nano-devices potential with higher performance and stability. However, up to now, the synthesis and its device applications are in its early stage. This review systematically summarized the state of the art of PtSe₂from its structure, property, synthesis and potential application. Finally, the current challenges and future perspectives are outlined for the applications of 2D PtSe₂.

Layered PtSe2 for Sensing, Photonic, and (Opto-)Electronic Applications

Since the first experimental discovery of graphene 16 years ago, many other 2D layered nanomaterials have been reported. However, the majority of 2D nanostructures suffer from relatively complicated fabrication processes that have bottlenecked their development and their uptake by industry for practical applications. Here, the recent progress in sensing, photonic, and (opto-)electronic applications of PtSe₂ , a 2D layered material that is likely to be used in industries benefiting from its high air-stability and semiconductor-technology-compatible fabrication methods, is reviewed. The advantages and disadvantages of a range of synthesis methods for PtSe₂ are initially compared, followed by a discussion of its outstanding properties, and industrial and commercial advantages. Research focused on the broadband nonlinear photonic properties of PtSe₂ , as well as reports of its use as a saturable absorber in ultrafast lasers, are then reviewed. Additionally, the advances that have been achieved in a range of PtSe₂ -based field-effect transistors, photodetectors, and sensors are summarized. Finally, a conclusion on these results along with the outlook for the future is presented.

Two-dimensional van der Waals heterostructure CdO/PtSe2: promising visible light photocatalyst for overall water splitting

Due to the gradual depletion of fossil fuels and the serious environmental pollution, hydrogen generation by photocatalytic water splitting has been considered as an alternative strategy for clean energy. Herein, using hybrid density functional calculations, we systematically study the structural, electronic and optical properties of van der Waals heterostructure CdO/PtSe₂ with different stacking patterns. The heterostructure is found to be dynamically stable, and has type-II band alignment with a large built-in electric field, which is favorable for the efficient spatial separation of photogenerated charge carriers. By revealing the intrinsic interface dipoles dependent photocatalytic mechanisms, we find the band edges of all patterns straddle the water redox levels despite the AB-1 pattern having a bandgap less than 1.23 eV. Moreover, the heterostructure shows globally improved optical absorptions with a large absorption coefficient (10⁵ cm^-1) compared to the single layers, demonstrating the enhanced photocatalytic activity. Comparing with widely discussed bilayer systems like graphene/C₃N₄ and MoS₂/C₃N₄, the CdO/PtSe₂ simultaneously has several advantages or peculiarities such as the more favorable absorption of visible light, therefore CdO/PtSe₂ is a promising candidate and a unique system for photocatalytic water splitting.

Long-term stable platinum diselenide for nanosecond pulse generation in a 3-µm mid-infrared fiber laser

In this paper, we fabricate the bulk-like multilayer platinum diselenide (PtSe₂) and employ it as saturable absorber (SA) for a passively Q-switched fiber laser operating at 2865 nm for the first time, to the best of our knowledge. The nonlinear optical measurements of the bulk-like multilayer PtSe₂ reveal efficient saturable absorption property at around 3 µm showing a modulation depth of 8.54% and a saturation intensity of 0.074 GW/cm². By introducing the bulk-like PtSe₂-SA into the Ho³⁺/Pr³⁺ co-doped ZBLAN fiber laser, stable Q-switched pulses with a duration as short as 620 ns are achieved at the pulse repetition rate of 238.1 kHz. The maximum average power is 93 mW, corresponding to a peak power of 0.63 W. The excellent long-term stability of the PtSe₂-SA was also verified utilizing the same experimental setup after 40 days of ambient storage of the PtSe₂ sample. The results not only validate the excellent nonlinear optical performance of PtSe₂, but also indicate that the bulk-like PtSe₂ is a promising long-term stable SA material under ambient conditions for nanosecond pulse generation in the 3-µm mid-infrared spectral region.

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

In recent years, emerging two-dimensional (2D) platinum diselenide (PtSe2) has quickly attracted the attention of the research community due to its novel physical and chemical properties. For the past few years, increasing research achievements on 2D PtSe2 have been reported toward the fundamental science and various potential applications of PtSe2. In this review, the properties and structure characteristics of 2D PtSe2 are discussed at first. Then, the recent advances in synthesis of PtSe2 as well as their applications are reviewed. At last, potential perspectives in exploring the application of 2D PtSe2 are reviewed.

Temperature-dependent Raman spectroscopy and sensor applications of PtSe2 nanosheets synthesized by wet chemistry

We report on a wet chemistry method used to grow PtSe₂ nanosheets followed by thermal annealing. The SEM and TEM analysis confirms the formation of PtSe₂ nanosheets. Furthermore, XRD, Raman, XPS and SAED patterns were used to analyze the crystal structure and to confirm the formation of the PtSe₂ phase. The temperature-dependent Raman spectroscopy investigations were carried out on PtSe₂ nanosheets deposited on Si substrates in the temperature range 100-506 K. The shifts in Raman active E_g and A_1g modes as a function of temperature were monitored. The temperature coefficient for both modes was calculated and was found to match well with the reported 2D transition metal dichalcogenides. A PtSe₂ nanosheet-based sensor device was tested for its applicability as a humidity sensor and photodetector. The humidity sensor based on PtSe₂ nanosheets showed an excellent recovery time of ≈5 s, indicating the great potential of PtSe₂ for future sensor devices.

Hierarchical Bimetallic AgPt Nanoferns as High-Performance Catalysts for Selective Acetone Hydrogenation to Isopropanol

A combinative effect of two or more individual material properties, such as lattice parameters and chemical properties, has been well-known to generate novel nanomaterials with special crystal growth behavior and physico-chemical performance. This paper reports unusually high catalytic performance of AgPt nanoferns in the hydrogenation reaction of acetone conversion to isopropanol, which is several orders higher compared to the performance shown by pristine Pt nanocatalysts or other metals and metal-metal oxide hybrid catalyst systems. It has been demonstrated that the combinative effect during the bimetallisation of Ag and Pt produced nanostructures with a highly anisotropic morphology, i.e., hierarchical nanofern structures, which provide high-density active sites on the catalyst surface for an efficient catalytic reaction. The extent of the effect of structural growth on the catalytic performance of hierarchical AgPt nanoferns is discussed.

Phase-Engineered PtSe2 -Layered Films by a Plasma-Assisted Selenization Process toward All PtSe2 -Based Field Effect Transistor to Highly Sensitive, Flexible, and Wide-Spectrum Photoresponse Photodetectors

The formation of PtSe₂ -layered films is reported in a large area by the direct plasma-assisted selenization of Pt films at a low temperature, where temperatures, as low as 100 °C at the applied plasma power of 400 W can be achieved. As the thickness of the Pt film exceeds 5 nm, the PtSe₂ -layered film (five monolayers) exhibits a metallic behavior. A clear p-type semiconducting behavior of the PtSe₂ -layered film (≈trilayers) is observed with the average field effective mobility of 0.7 cm² V^-1 s^-1 from back-gated transistor measurements as the thickness of the Pt film reaches below 2.5 nm. A full PtSe₂ field effect transistor is demonstrated where the thinner PtSe₂ , exhibiting a semiconducting behavior, is used as the channel material, and the thicker PtSe₂ , exhibiting a metallic behavior, is used as an electrode, yielding an ohmic contact. Furthermore, photodetectors using a few PtSe₂ -layered films as an adsorption layer synthesized at the low temperature on a flexible substrate exhibit a wide range of absorption and photoresponse with the highest photocurrent of 9 µA under the laser wavelength of 408 nm. In addition, the device can maintain a high photoresponse under a large bending stress and 1000 bending cycles.

Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes

Platinum diselenide (PtSe₂) is a group-10 transition metal dichalcogenide (TMD) that has unique electronic properties, in particular a semimetal-to-semiconductor transition when going from bulk to monolayer form. We report on vertical hybrid Schottky barrier diodes (SBDs) of two-dimensional (2D) PtSe₂ thin films on crystalline n-type silicon. The diodes have been fabricated by transferring large-scale layered PtSe₂ films, synthesized by thermally assisted conversion of predeposited Pt films at back-end-of-the-line CMOS compatible temperatures, onto SiO₂/Si substrates. The diodes exhibit obvious rectifying behavior with a photoresponse under illumination. Spectral response analysis reveals a maximum responsivity of 490 mA/W at photon energies above the Si bandgap and relatively weak responsivity, in the range of 0.1-1.5 mA/W, at photon energies below the Si bandgap. In particular, the photoresponsivity of PtSe₂ in infrared allows PtSe₂ to be utilized as an absorber of infrared light with tunable sensitivity. The results of our study indicate that PtSe₂ is a promising option for the development of infrared absorbers and detectors for optoelectronics applications with low-temperature processing conditions.