Sensitive Raman Probe of Electronic Interactions between Monolayer Graphene and Substrate under Electrochemical Potential Control

Growth and Characterization of Graphene Layers on Different Kinds of Copper Surfaces

Graphene films were grown by chemical vapor deposition on Cu foil. The obtained samples were characterized by Raman spectroscopy, ellipsometry, X-ray photoelectron spectroscopy and electron back-scatter diffraction. We discuss the time-dependent changes in the samples, estimate the thickness of emerging Cu₂O beneath the graphene and check the orientation-dependent affinity to oxidation of distinct Cu grains, which also governs the manner in which the initial strong Cu-graphene coupling and strain in the graphene lattice is released. Effects of electropolishing on the quality and the Raman response of the grown graphene layers are studied by microtexture polarization analysis. The obtained data are compared with the Raman signal of graphene after transfer on glass substrate revealing the complex interaction of graphene with the Cu substrate.

Oxygen intercalation in PVD graphene grown on copper substrates: A decoupling approach

We investigate the intercalation process of oxygen in-between a PVD-grown graphene layer and different copper substrates as a methodology for reducing the substrate-layer interaction. This growth method leads to an extended defect-free graphene layer that strongly couples with the substrate. We have found, by means of X-ray photoelectron spectroscopy, that after oxygen exposure at different temperatures, ranging from 280 °C to 550 °C, oxygen intercalates at the interface of graphene grown on Cu foil at an optimal temperature of 500 °C. The low energy electron diffraction technique confirms the adsorption of an atomic oxygen adlayer on top of the Cu surface and below graphene after oxygen exposure at elevated temperature, but no oxidation of the substrate is induced. The emergence of the 2D Raman peak, quenched by the large interaction with the substrate, reveals that the intercalation process induces a structural undoing. As suggested by atomic force microscopy, the oxygen intercalation does not change significantly the surface morphology. Moreover, theoretical simulations provide further insights into the electronic and structural undoing process. This protocol opens the door to an efficient methodology to weaken the graphene-substrate interaction for a more efficient transfer to arbitrary surfaces.

Potential energy shift of the Fermi level at plasmonic structures for light-energy conversion determined by graphene-based Raman measurements

Single layer graphene was used to determine the electrochemical potential of plasmonic nano-structures for photoelectrochemical energy conversions. From electrochemical Raman measurements of the graphene layer under near-infrared light, illumination has revealed the relationship between the photoenergy conversion ability and the Fermi level of the plasmonic structure. The determination is based on in situ monitoring of G and 2D Raman bands of the graphene layer on plasmonic structures. The correlation plots of G and 2D bands show the dependence on the photoconversion ability. The present electrochemical Raman measurements provide detailed understanding of the plasmon-induced charge transfer process for further developments on the ability.

Nonzero Wavevector Excitation of Graphene by Localized Surface Plasmons

Electrochemical surface-enhanced Raman scattering measurements of single layer graphene provide unique information on resonant excitation induced by localized surface plasmons under controlled electron or hole doping. The highly confined electromagnetic field from the LSPs of the Au nanodimer structures prepared on defect-free graphene can generate holes and electrons of the electrochemical potentials beyond the limit of far-field light illumination. The electrochemical in situ SERS spectra prove nonzero wavevector excitation through the observation of normally forbidden Raman bands in graphene. The present findings point to a novel approach to breaking the limit of optoelectronic interactions and photochemical reactions of graphene and other semiconductors.