Surface-Engineered Nanostructure-Based Efficient Nonpolar GaN Ultraviolet Photodetectors

Semipolar (112̅2) AlGaN-Based Solar-Blind Ultraviolet Photodetectors with Fast Response

The high-quality semipolar (112̅2) AlGaN epitaxial films have been obtained on m-plane sapphire by metal-organic chemical vapor deposition. X-ray rocking curve measurements show the full-width at half-maximums of semipolar (112̅2)-oriented AlGaN films are 0.357° and 0.531° along [112̅3̅]_AlGaN and [11̅00]_AlGaN, respectively. The fabricated semipolar AlGaN metal-semiconductor-metal solar-blind ultraviolet (UV) photodetector (PD) exhibits a high responsivity of 1842 A/W. The fast response and reliability of the UV PD are ensured via fast switching with a rise and decay time of 90 ms and 53(720) ms, respectively. The UV PD exhibits a significant reduction in the dark current, that is, from 100 μA to 780 fA at 10 V, using a simple wet chemical etching to modify the surface properties of materials. The photo-to-dark-current ratio value of the etched UV PD reaches 4 orders of magnitude higher than the unetched UV PD under 270 nm illumination. These are attributed to the fact that KOH wet etching assists in eliminating the surface states and reconstructing the surface oxides. This work might provide a new potential for the development of solar-blind UV PDs with high performance.

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.

Fast Response Characteristics of Flexible Ultraviolet Photosensors with GaN Nanowires and Graphene

We report the fast response characteristics of flexible ultraviolet photosensors with GaN nanowires (NWs) and a graphene channel. The GaN NWs used as light-absorbing media are horizontally and randomly embedded in a graphene sandwich structure in which the number of bottom graphene layers is varied from zero to three and the top is a fixed single layer of graphene. In the response curve of the photosensor with a double-layer bottom graphene, as obtained under pulsed illumination with a pulse width of 50 ms and a duty cycle of 50%, the rise and decay times were measured as 24.1 ± 0.1 and 28.2 ± 0.1 ms, respectively. The eye-crossing percentage was evaluated as 52.1%, indicating no substantial distortion of the duty cycle and no pulse symmetry problem. The rise and decay times estimated from an equivalent circuit analysis represented by resistances and capacitances agree well with the measured values. When the device was under the bending condition, the rise and decay times of the photosensor were comparable to those in the unbent state.

Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation

Trilayer memory capacitors of control HfO₂/floating gate of Ge nanoparticles in HfO₂/tunnel HfO₂/Si substrate deposited by magnetron sputtering and subsequently annealed are investigated for the first time for applications in radiation dosimetry. In the floating gate (FG), amorphous Ge nanoparticles (NPs) are arranged in two rows inside the HfO₂ matrix. The HfO₂ matrix is formed of orthorhombic/tetragonal nanocrystals (NCs). The adjacent thin films to the FG are also formed of orthorhombic/tetragonal HfO₂ NCs. This phase is formed during annealing, in samples with thick control HfO₂, in the presence of Ge, being induced by the stress. In the rest of the control oxide, HfO₂ NCs are monoclinic. Orthorhombic HfO₂ has ferroelectric properties and therefore enhances the memory window produced by charge storage in Ge NPs to above 6 V. The high sensitivity of 0.8 mV Gy^-1 to α particle irradiation from a ²⁴¹Am source was measured by monitoring the flatband potential during radiation exposure after electrical writing of the memory.

Improvements in the Performance of a Visible-NIR Photodetector Using Horizontally Aligned TiS3 Nanoribbons

We report the fabrication and characterization of visible and near-infrared-resistive photodetector using horizontally aligned titanium tri sulfide (TiS3) nanoribbons. The fabrication process employed micro-electromechanical system, photolithography and dielectrophoretic (DEP) methods. The interdigitated electrodes (IDE) fingers were fabricated using photolithography and thin-film metallization techniques onto the Si/SiO2 substrate, and then TiS3 nanoribbons were horizontally aligned in between IDE using DEP. The fabricated device was first characterized in absence of light and then, the photodetector-based characteristics were obtained by illuminating it with fiber-coupled laser beam. These characteristics were optimized by varying wavelength and power density of the laser beam. The present photodetector shows a maximum responsivity of 5.22 × 102 A/W, quantum efficiency of 6.08 × 102, and detectivity of 1.69 × 109 Jones. The switching times, i.e., response and recovery times were found to be 1.53 and 0.74 s, respectively, with 1064 nm wavelength and 3.4 mW/mm2 power density of the laser beam. Also, the effect of O2 adsorption on nanoribbons has been studied and it is found that adsorbed O2 acts as electron acceptor and decreases the conductivity of the photodetector. Experimentally, it is found that the photoresponse of the horizontally aligned TiS3 nanoribbons is better than that of a randomly oriented TiS3 nanoribbon-based photodetector. Finally, the performance of the present photodetector was compared to that of the previous ones that were found to outperform the reported ones. The additional advantages of the photodetector include excellent stability and portability from which it may be concluded that TiS3 nanoribbons can be a promising candidate for application in nanoscale electronic and optoelectronic devices.

P. S, K. N. NU. Low temperature-processed ZnO thin films for p–n junction-based visible-blind ultraviolet photodetectors

Visible-blind ultraviolet photodetectors have been fabricated with a p–n junction based on ZnO and an organic hole transport layer.