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Kumar R, Mishra V, Dixit T, Barman PK, Nayak PK, Rao MSR. Observation of positive trions in α-MoO 3/MoS 2 van der Waals heterostructures. NANOSCALE 2023. [PMID: 37449882 DOI: 10.1039/d3nr01480k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
Mono-layer transition metal dichalcogenides (TMDCs) have emerged as an ideal platform for the study of many-body physics. As a result of their low dimensionality, these materials show a strong Coulomb interaction primarily due to reduced dielectric screening that leads to the formation of stable excitons (bound electron-hole pairs) and higher order excitons, including trions, and bi-excitons even at room temperature. van der Waals (vdW) heterostructures (HSs) of TMDCs provide an additional degree of freedom for altering the properties of 2D materials because charge carriers (electrons) in the different atomically thin layers are exposed to interlayer coupling and charge transfer takes place between the layers of vdW HSs. Astoundingly, it leads to the formation of different types of quasi-particles. In the present work, we report the synthesis of vdW HSs, i.e., α-MoO3/MoS2, on a 300 nm SiO2/Si substrate and investigate their temperature-dependent photoluminescence (PL) spectra. Interestingly, an additional PL peak is observed in the case of the HS, along with A and B excitonic peaks. The emergence of a new PL peak in the low-energy regime has been assigned to the formation of a positive trion. The formation of positive trions in the HS is due to the high work function of α-MoO3, which enables the spontaneous transit of electrons from MoS2 to α-MoO3 and injection of holes into the MoS2 layer. In order to confirm charge transfer in the α-MoO3/MoS2 HS, systematic power and wavelength-dependent Raman and PL studies, as well as first-principle calculations using Bader charge analysis, have been carried out, which clearly validate our mechanism. We believe that this study will provide a platform towards the integration of vdW HSs for next-generation excitonic devices.
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Affiliation(s)
- Ravindra Kumar
- Department of Physics, Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, 600036, India.
- Department of Physics, 2D Materials Research and Innovation Group, and Micro-Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Vikash Mishra
- Department of Physics, Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, 600036, India.
| | - Tejendra Dixit
- Optoelectronics and Quantum Devices Group, Department of Electronics and Communication Engineering, Indian Institute of Information Technology Design and Manufacturing, Kancheepuram, Chennai, 600127, India
| | - Prahalad Kanti Barman
- Department of Physics, 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Pramoda K Nayak
- Department of Physics, 2D Materials Research and Innovation Group, and Micro-Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai, 600036, India
- Centre for Nano and Material Sciences, Jain (Deemed-to-be University), Jain Global Campus, Kanakapura, Bangalore 562112, Karnataka, India.
| | - M S Ramachandra Rao
- Department of Physics, Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai, 600036, India.
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Li W, Li H, Khan K, Liu X, Wang H, Lin Y, Zhang L, Tareen AK, Wageh S, Al-Ghamdi AA, Teng D, Zhang H, Shi Z. Infrared Light Emission Devices Based on Two-Dimensional Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12172996. [PMID: 36080035 PMCID: PMC9457538 DOI: 10.3390/nano12172996] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Revised: 08/18/2022] [Accepted: 08/28/2022] [Indexed: 05/25/2023]
Abstract
Two-dimensional (2D) materials have garnered considerable attention due to their advantageous properties, including tunable bandgap, prominent carrier mobility, tunable response and absorption spectral band, and so forth. The above-mentioned properties ensure that 2D materials hold great promise for various high-performance infrared (IR) applications, such as night vision, remote sensing, surveillance, target acquisition, optical communication, etc. Thus, it is of great significance to acquire better insight into IR applications based on 2D materials. In this review, we summarize the recent progress of 2D materials in IR light emission device applications. First, we introduce the background and motivation of the review, then the 2D materials suitable for IR light emission are presented, followed by a comprehensive review of 2D-material-based spontaneous emission and laser applications. Finally, further development directions and challenges are summarized. We believe that milestone investigations of 2D-material-based IR light emission applications will emerge soon, which are beneficial for 2D-material-based nano-device commercialization.
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Affiliation(s)
- Wenyi Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Li
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Karim Khan
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan 523808, China
| | - Xiaosong Liu
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Hui Wang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Yanping Lin
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Lishang Zhang
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Ayesha Khan Tareen
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
- School of Mechanical Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - S. Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Ahmed A. Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
| | - Daoxiang Teng
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
| | - Han Zhang
- Shenzhen Engineering Laboratory of Phosphorene and Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, China
| | - Zhe Shi
- School of Physics & New Energy, Xuzhou University of Technology, Xuzhou 221018, China
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Naziul Haque AKM, Ahmed T, Baten MZ. In-plane directionality control of strongly localized resonant modes of light in disordered arrays of dielectric scatterers. OPTICS EXPRESS 2021; 29:39227-39240. [PMID: 34809291 DOI: 10.1364/oe.443103] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Accepted: 10/30/2021] [Indexed: 06/13/2023]
Abstract
In this work we propose and analyze techniques of in-plane directionality control of strongly localized resonant modes of light in random arrays of dielectric scatterers. Based on reported diameters and areal densities of epitaxially grown self-organized nanowires, two-dimensional (2D) arrays of dielectric scatterers have been analyzed where randomness is gradually increased along a preferred direction of directionality enhancement. In view of the multiple-scattering mediated wave dynamics and directionality enhancement of light in such arrays, a more conveniently realizable, practical structure is proposed where a 2D periodic array is juxtaposed with a uniform, random scattering medium. Far- and near-field emission characteristics of such arrays show that in spite of the utter lack of periodicity in the disordered regime of the structure, directionality of the high-Q resonant modes is modified such that on average more than 70% of the output power is emitted along the pre-defined direction of preference. Such directionality enhancement and strong localization are nonexistent when the 2D periodic array is replaced with a one-dimensional Bragg reflector, thereby confirming the governing role of in-plane multiple scattering in the process. The techniques presented herein offer novel means of realizing not only directionality tunable edge-emitting random lasers but also numerous other disordered media based photonic structures and systems with higher degrees of control and tunability.
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Cheng Z, Cao R, Wei K, Yao Y, Liu X, Kang J, Dong J, Shi Z, Zhang H, Zhang X. 2D Materials Enabled Next-Generation Integrated Optoelectronics: from Fabrication to Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003834. [PMID: 34105275 PMCID: PMC8188205 DOI: 10.1002/advs.202003834] [Citation(s) in RCA: 36] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Revised: 01/04/2021] [Indexed: 05/06/2023]
Abstract
2D materials, such as graphene, black phosphorous and transition metal dichalcogenides, have gained persistent attention in the past few years thanks to their unique properties for optoelectronics. More importantly, introducing 2D materials into silicon photonic devices will greatly promote the performance of optoelectronic devices, including improvement of response speed, reduction of energy consumption, and simplification of fabrication process. Moreover, 2D materials meet the requirements of complementary metal-oxide-semiconductor compatible silicon photonic manufacturing. A comprehensive overview and evaluation of state-of-the-art 2D photonic integrated devices for telecommunication applications is provided, including light sources, optical modulators, and photodetectors. Optimized by unique structures such as photonic crystal waveguide, slot waveguide, and microring resonator, these 2D material-based photonic devices can be further improved in light-matter interactions, providing a powerful design for silicon photonic integrated circuits.
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Affiliation(s)
- Zhao Cheng
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Rui Cao
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Kangkang Wei
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Yuhan Yao
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Xinyu Liu
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Jianlong Kang
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Jianji Dong
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Zhe Shi
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Han Zhang
- Institute of Microscale OptoelectronicsCollaborative Innovation Centre for Optoelectronic Science & TechnologyKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen Key Laboratory of Micro‐Nano Photonic Information TechnologyGuangdong Laboratory of Artificial Intelligence and Digital Economy (SZ)Shenzhen UniversityShenzhen518060P. R. China
| | - Xinliang Zhang
- Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan430074P. R. China
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Su CY, Hou CF, Hsu YT, Lin HY, Liao YM, Lin TY, Chen YF. Multifunctional Random-Laser Smart Inks. ACS APPLIED MATERIALS & INTERFACES 2020; 12:49122-49129. [PMID: 33058666 DOI: 10.1021/acsami.0c14875] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
With the superiority of laser-level intensity, narrow spectral line width, and broad-angular emission, random lasers (RLs) have drawn considerable research interests for their potential to carry out a variety of applications. In this work, the applications associated with optical-encoded technologies, including security printing, military friend or foe identification (FFI), and anticounterfeiting of documents are highlighted, and the concept of a transient RL "smart ink" has been proposed. The proof-of-concept was demonstrated as invisible signatures, which encoded the messages through the spectral difference of spontaneous emission and RL under specified conditions. Next, the possibility of encoding the data with multibit signals was further confirmed by exploiting the threshold tunability of RLs. Moreover, the transient characteristic of this smart ink and its capability to be attached on freeform surfaces of different materials were also shown. With the advantages of a facile manufacturing process and multiple purposes, it is expected that this ink can soon be carried out in a variety of practical utilities.
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Affiliation(s)
- Chen-You Su
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Cheng-Fu Hou
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Tzu Hsu
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Hsia-Yu Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Yu-Ming Liao
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Tai-Yuan Lin
- Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan
| | - Yang-Fang Chen
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
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Pincheira PIR, da Silva Neto ML, Maldonado M, de Araújo CB, Jawaid AM, Busch R, Ritter AJ, Vaia RA, Gomes ASL. Monolayer 2D ZrTe 2 transition metal dichalcogenide as nanoscatter for random laser action. NANOSCALE 2020; 12:15706-15710. [PMID: 32672308 DOI: 10.1039/d0nr03152f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We demonstrate random laser emission from Rhodamine 6G with ZrTe2 transition metal dichalcogenide (TMD) as nanoscatters, both in powder and 2D nanoflakes liquid suspension. The 2D semimetal ZrTe2 was synthesized by a modified redox exfoliation method to provide single layer TMD, which was employed for the first time as the scatter medium to provide feedback in an organic gain medium random laser. In order to exploit random laser emission and its threshold value, replica symmetry breaking leading to a photonic paramagnetic to photonic spin glass transition in both 2D and 3D (powder) ZrTe2 was demonstrated. One important aspect of mixing organic dyes with ZrTe2 is that there is no chemical reaction leading to dye degradation, demonstrated by operating over more than 2 hours of pulsed (5 Hz) random laser emission.
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Affiliation(s)
- Pablo I R Pincheira
- Departamento de Ciencias Fisicas, Universidad de La Frontera, Temuco, Chile.
| | - Manoel L da Silva Neto
- Graduate Program in materials Science, Universidade Federal de Pernambuco, 50670-901, Recife-PE, Brazil
| | - Melissa Maldonado
- Departamento de Física, Universidade Federal de Pernambuco, Av. Prof. Moraes Rego, 1235, Cidade Universitária, Recife, PE 50670-901, Brazil.
| | - Cid B de Araújo
- Graduate Program in materials Science, Universidade Federal de Pernambuco, 50670-901, Recife-PE, Brazil and Departamento de Física, Universidade Federal de Pernambuco, Av. Prof. Moraes Rego, 1235, Cidade Universitária, Recife, PE 50670-901, Brazil.
| | - Ali M Jawaid
- Materials and Manofacturing Directorate, Air Force Research Laboratories, 45433, Ohio, USA
| | - Robert Busch
- Materials and Manofacturing Directorate, Air Force Research Laboratories, 45433, Ohio, USA
| | - Allyson J Ritter
- Materials and Manofacturing Directorate, Air Force Research Laboratories, 45433, Ohio, USA
| | - Richard A Vaia
- Materials and Manofacturing Directorate, Air Force Research Laboratories, 45433, Ohio, USA
| | - Anderson S L Gomes
- Departamento de Física, Universidade Federal de Pernambuco, Av. Prof. Moraes Rego, 1235, Cidade Universitária, Recife, PE 50670-901, Brazil.
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