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Roh I, Goh SH, Meng Y, Kim JS, Han S, Xu Z, Lee HE, Kim Y, Bae SH. Applications of remote epitaxy and van der Waals epitaxy. NANO CONVERGENCE 2023; 10:20. [PMID: 37120780 PMCID: PMC10149550 DOI: 10.1186/s40580-023-00369-3] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Accepted: 04/09/2023] [Indexed: 05/03/2023]
Abstract
Epitaxy technology produces high-quality material building blocks that underpin various fields of applications. However, fundamental limitations exist for conventional epitaxy, such as the lattice matching constraints that have greatly narrowed down the choices of available epitaxial material combinations. Recent emerging epitaxy techniques such as remote and van der Waals epitaxy have shown exciting perspectives to overcome these limitations and provide freestanding nanomembranes for massive novel applications. Here, we review the mechanism and fundamentals for van der Waals and remote epitaxy to produce freestanding nanomembranes. Key benefits that are exclusive to these two growth strategies are comprehensively summarized. A number of original applications have also been discussed, highlighting the advantages of these freestanding films-based designs. Finally, we discuss the current limitations with possible solutions and potential future directions towards nanomembranes-based advanced heterogeneous integration.
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Affiliation(s)
- Ilpyo Roh
- Mechanical Engineering & Materials Science, Washington University in St. Louis, Saint Louis, MO, 63105, USA
- R&D CENTER, M.O.P Co., Ltd, Seoul, 07281, South Korea
| | - Seok Hyeon Goh
- Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju, 54896, South Korea
| | - Yuan Meng
- Mechanical Engineering & Materials Science, Washington University in St. Louis, Saint Louis, MO, 63105, USA
| | - Justin S Kim
- The Institution of Materials Science & Engineering, Washington University in St. Louis, Saint Louis, MO, 63130, USA
| | - Sangmoon Han
- Mechanical Engineering & Materials Science, Washington University in St. Louis, Saint Louis, MO, 63105, USA
| | - Zhihao Xu
- The Institution of Materials Science & Engineering, Washington University in St. Louis, Saint Louis, MO, 63130, USA
| | - Han Eol Lee
- Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju, 54896, South Korea.
| | - Yeongin Kim
- Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH, 45221, USA.
| | - Sang-Hoon Bae
- Mechanical Engineering & Materials Science, Washington University in St. Louis, Saint Louis, MO, 63105, USA.
- The Institution of Materials Science & Engineering, Washington University in St. Louis, Saint Louis, MO, 63130, USA.
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Soopy AKK, Li Z, Tang T, Sun J, Xu B, Zhao C, Najar A. In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:E126. [PMID: 33430484 PMCID: PMC7827665 DOI: 10.3390/nano11010126] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/11/2020] [Revised: 12/28/2020] [Accepted: 12/31/2020] [Indexed: 02/01/2023]
Abstract
This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.
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Affiliation(s)
- Abdul Kareem K. Soopy
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE;
| | - Zhaonan Li
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
| | - Tianyi Tang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Jiaqian Sun
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Bo Xu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Chao Zhao
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences & Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China; (T.T.); (J.S.); (B.X.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 101804, China
| | - Adel Najar
- Department of Physics, College of Science, United Arab Emirates University, Al Ain 15551, UAE;
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