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Nathawat J, Mansaray I, Sakanashi K, Wada N, Randle MD, Yin S, He K, Arabchigavkani N, Dixit R, Barut B, Zhao M, Ramamoorthy H, Somphonsane R, Kim GH, Watanabe K, Taniguchi T, Aoki N, Han JE, Bird JP. Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene. Nat Commun 2023; 14:1507. [PMID: 36932096 PMCID: PMC10023744 DOI: 10.1038/s41467-023-37292-4] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 03/09/2023] [Indexed: 03/19/2023] Open
Abstract
Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a proper understanding of the dynamics of hot carriers in these bands is a prerequisite for such applications. In this work, we therefore apply a strategy of rapid electrical pulsing to drive carriers in graphene/h-BN heterostructures deep into the dissipative limit of strong electron-phonon coupling. By using electrical gating to move the chemical potential through the "Moiré bands", we demonstrate a cyclical evolution between metallic and semiconducting states. This behavior is captured in a self-consistent model of non-equilibrium transport that considers the competition of electrically driven inter-band tunneling and hot-carrier scattering by strongly non-equilibrium phonons. Overall, our results demonstrate how a treatment of the dynamics of both hot carriers and hot phonons is essential to understanding the properties of functional graphene superlattices.
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Affiliation(s)
- Jubin Nathawat
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Ishiaka Mansaray
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Kohei Sakanashi
- Department of Materials Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan
| | - Naoto Wada
- Department of Materials Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan
| | - Michael D Randle
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Shenchu Yin
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Keke He
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Nargess Arabchigavkani
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Ripudaman Dixit
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Bilal Barut
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Miao Zhao
- High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, 3 Beitucheng West Road, Chaoyang District, Beijing, 100029, PR China
| | - Harihara Ramamoorthy
- Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
| | - Ratchanok Somphonsane
- Department of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
| | - Gil-Ho Kim
- School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan
| | - Jong E Han
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA.
| | - Jonathan P Bird
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA. .,Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA.
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Pasadas F, Feijoo PC, Mavredakis N, Pacheco-Sanchez A, Chaves FA, Jiménez D. Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201691. [PMID: 35593428 DOI: 10.1002/adma.202201691] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2022] [Revised: 04/26/2022] [Indexed: 06/15/2023]
Abstract
The progress made toward the definition of a modular compact modeling technology for graphene field-effect transistors (GFETs) that enables the electrical analysis of arbitrary GFET-based integrated circuits is reported. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Another set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trapping/detrapping-, self-heating-, and non-quasi static-effects, which can have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, a perspective of the challenges during the scale up of the GFET modeling technology toward higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers, is provided.
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Affiliation(s)
- Francisco Pasadas
- Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain
- Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Granada, 18071, Spain
| | - Pedro C Feijoo
- Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain
| | - Nikolaos Mavredakis
- Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain
| | - Aníbal Pacheco-Sanchez
- Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain
| | - Ferney A Chaves
- Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain
| | - David Jiménez
- Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, 08193, Spain
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Hou Y, Ma S, Liu Q, Zhang S, Chu Y, Hao X, Han B, Xu B. 2D black arsenic phosphorus and its application for anodes of lithium ion batteries. CrystEngComm 2020. [DOI: 10.1039/d0ce01226b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) structured black arsenic phosphorus (B-AsP) compound materials play a pivotal role in a wide range of applications due to their exotic physical properties and flexible architectures.
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Affiliation(s)
- Yanyan Hou
- Institute of Atomic and Molecular Science
- Shaanxi University of Science and Technology
- Xi'an 710021
- China
| | - Shufang Ma
- Institute of Atomic and Molecular Science
- Shaanxi University of Science and Technology
- Xi'an 710021
- China
| | - Qingming Liu
- Institute of Atomic and Molecular Science
- Shaanxi University of Science and Technology
- Xi'an 710021
- China
| | - Shuai Zhang
- Institute of Atomic and Molecular Science
- Shaanxi University of Science and Technology
- Xi'an 710021
- China
| | - Yangyang Chu
- Institute of Atomic and Molecular Science
- Shaanxi University of Science and Technology
- Xi'an 710021
- China
| | - Xiaodong Hao
- Institute of Atomic and Molecular Science
- Shaanxi University of Science and Technology
- Xi'an 710021
- China
| | - Bin Han
- Institute of Atomic and Molecular Science
- Shaanxi University of Science and Technology
- Xi'an 710021
- China
| | - Bingshe Xu
- Institute of Atomic and Molecular Science
- Shaanxi University of Science and Technology
- Xi'an 710021
- China
- Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education
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