High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

The peculiar correlationship between the optical localization-state and the electrical deep-level defect-state was observed in the In_0.52Al_0.48As/In_0.53Ga_0.47As quantum well structure that comprises two quantum-confined electron-states and two hole-subbands. The sample clearly exhibited the Fermi edge singularity (FES) peak in its photoluminescence spectrum at 10–300 K; and the FES peak was analyzed in terms of the phenomenological line shape model with key physical parameters such as the Fermi energy, the hole localization energy, and the band-to-band transition amplitude. Through the comprehensive studies on both the theoretical calculation and the experimental evaluation of the energy band profile, we found out that the localized state, which is separated above by ~0.07 eV from the first excited hole-subband, corresponds to the deep-level state, residing at the position of ~0.75 eV far below the conduction band (i.e., near the valence band edge).

Thermoelectric-cooled terahertz quantum cascade lasers

We demonstrate the first lasing emission of a thermo-electrically cooled terahertz quantum cascade laser (THz QCL). A high temperature three-well THz QCL emitting at 3.8 THz is mounted to a novel five-stage thermoelectric cooler reaching a temperature difference of ΔT = 124 K. The temperature and time-dependent laser performance is investigated and shows a peak pulse power of 4.4 mW and a peak average output power of 100 μW for steady-state operation.

Barrier Height Tuning of Terahertz Quantum Cascade Lasers for High-Temperature Operation

Terahertz quantum cascade lasers (QCLs) are excellent coherent light sources, but are still limited to an operating temperature below 200 K. To tackle this, we analyze the influence of the barrier height for the identical three-well terahertz QCL layer sequence by comparing different aluminum concentrations (x = 0.12-0.24) in the GaAs/Al x Ga1-x As material system, and then we present an optimized structure based on these findings. Electron injection and extraction mechanisms as well as LO-phonon depopulation processes play crucial roles in the efficient operation of these lasers and are investigated in this study. Experimental results of the barrier height study show the highest operating temperature of 186.5 K for the structure with 21% aluminum barriers, with a record k B T max/ℏω value of 1.36 for a three-well active region design. An optimized heterostructure with 21% aluminum concentration and reduced cavity waveguide losses is designed and enables a record operating temperature of 196 K for a 3.8 THz QCL.