High Internal Emission Efficiency of Silicon Nanoparticles Emitting in the Visible Range

Why do Si quantum dots with stronger fast emission have lower external photoluminescence quantum yield?

Silicon quantum dots (QDs) are a promising non-toxic alternative to the already well-developed platform of light-emitting semiconductor QDs based on III-V and II-VI materials. Oxidized SiQDs or those surface-terminated with long alkyl chains typically feature long-lived orange-red photoluminescence originating in quantum-confined core states. However, sometimes an additional short-lived PL band, whose mechanism is still highly debated, is reported. Here, we perform a detailed study of the room-temperature PL of SiQDs using samples covering three main fabrication techniques. We find evidence for the presence of only one set of radiative processes in addition to the typical long-lived PL. Moreover, we experimentally determine the ratio between the short- and long-lived PL component, obtaining a wide range of values (0.003 - 0.1) depending on the type of sample. In accordance with an already published report, we observe a tendency of SiQDs with stronger short-lived PL to have lower external quantum yield. We explain this trend using a model of the optical performance of an ensemble of QDs with widely varying optical characteristics through a mechanism we call selective lifetime-based quenching.

Near-Field Modulation of Differently Oriented Single Photon Emitters with A Plasmonic Probe

Single photon emitters (SPEs) are critical components of photon-based quantum technology. Recently, the interaction between surface plasmons and emitters has attracted increasing attention because of its potential to improve the quality of single-photon sources through stronger light-matter interactions. In this work, we use a hybrid plasmonic probe composed of a fiber taper and silver nanowire to controllably modulate the radiation properties of SPEs with differently oriented polarization. For out-of-plane oriented SPEs such as single CdSe quantum dots, the radiation lifetime could be reduced by a factor as large as seven; for in-plane oriented SPEs such as hBN defect SPEs, the average modulation amplitude varied from 0.69 to 1.23, depending on the position of the probe. The experimental results were highly consistent with the simulations and theory. This work provides an efficient approach for optimizing the properties of SPEs for quantum photonic integration.

Nanomaterials for Quantum Information Science and Engineering

Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.

Silicon Quantum Dots: Synthesis, Encapsulation, and Application in Light-Emitting Diodes

Silicon quantum dots (SiQDs) are semiconductor Si nanoparticles ranging from 1 to 10 nm that hold great applicative potential as optoelectronic devices and fluorescent bio-marking agents due to their ability to fluoresce blue and red light. Their biocompatibility compared to conventional toxic Group II-VI and III-V metal-based quantum dots makes their practical utilization even more attractive to prevent environmental pollution and harm to living organisms. This work focuses on their possible use for light-emitting diode (LED) manufacturing. Summarizing the main achievements over the past few years concerning different Si quantum dot synthetic methods, LED formation and characteristics, and strategies for their stabilization by microencapsulation and modification of their surface by specific ligands, this work aims to provide guidance en route to the development of the first stable Si-based light-emitting diodes.

Structural origins, tunable photoluminescence governed by impurities and white-light irradiation in transparent Pr3+:BaTiO3 glass-ceramics

Study for impurity- and irradiation-induced structure evolution in mono Pr³⁺:BaTiO₃ glass ceramics notably promotes the active control of fluorescence emission.