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Chakraborty N, Panda SN, Mishra AK, Barman A, Mondal S. Ferromagnetic Ni 1-xV xO 1-y Nano-Clusters for NO Detection at Room Temperature: A Case of Magnetic Field-Induced Chemiresistive Sensing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:52301-52315. [PMID: 36375038 DOI: 10.1021/acsami.2c15766] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Surface modulation of functional nanostructures is an efficient way of improving gas sensing properties in chemiresistive materials. However, synthesis methods employed so far in achieving desired performances are cumbersome and energy intensive. Moreover, nano-engineering-induced magnetic properties of these materials which are expected to enhance sensing responses have not been utilized until now in improving their interaction with target gases. In particular for gasses with paramagnetic nature such as NO or NO2, the inherent magnetic property of the chemiresistor might assist in enabling superior sensing performance. In this work, vanadium-doped NiO nano-clusters with ferromagnetic behavior at room temperature have been synthesized by a simple and effective combination of soft chemical routes and employed in efficient and selective detection of paramagnetic NO gas. While NiO is typically anti-ferromagnetic, the nanoscale engineering of NiO- and V-doped NiO samples have been found to tune the inherent anti-ferromagnetic behavior into room-temperature ferromagnetism. Surface modification in terms of formation of nano-clusters led to an increased Brunauer-Emmett-Teller surface area of ∼120 m2/g. The sample Ni0.636V0.364O has been observed to exhibit a selective and high response of ∼98% to 1 ppm NO at room temperature with fast response (14 s) and recovery (95 s). The improved sensing response of this sample compared to other doped NiO variants could be explained in terms of lower remnant magnetic moment of the sample accompanied with higher excess negative charge at the surface. The sensing response of this sample was increased by 30% in the presence of an external magnetic field of 280 gauss, highlighting the importance of magnetic ordering in chemiresistive gas sensing between the magnetic sensor material and target analyte. This material stands as a potential gas sensor with excellent NO detection properties.
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Affiliation(s)
- Nirman Chakraborty
- CSIR-Central Glass and Ceramic Research Institute, 196, Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
| | - Surya Narayan Panda
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 106, India
| | - Ajay K Mishra
- High Pressure and Synchrotron Radiation Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085, India
| | - Anjan Barman
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 106, India
| | - Swastik Mondal
- CSIR-Central Glass and Ceramic Research Institute, 196, Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India
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2
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Liu L, Wang Y, Liu Y, Wang S, Li T, Feng S, Qin S, Zhang T. Heteronanostructural metal oxide-based gas microsensors. MICROSYSTEMS & NANOENGINEERING 2022; 8:85. [PMID: 35911378 PMCID: PMC9329395 DOI: 10.1038/s41378-022-00410-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2021] [Revised: 04/16/2022] [Accepted: 05/20/2022] [Indexed: 06/15/2023]
Abstract
The development of high-performance, portable and miniaturized gas sensors has aroused increasing interest in the fields of environmental monitoring, security, medical diagnosis, and agriculture. Among different detection tools, metal oxide semiconductor (MOS)-based chemiresistive gas sensors are the most popular choice in commercial applications and have the advantages of high stability, low cost, and high sensitivity. One of the most important ways to further enhance the sensor performance is to construct MOS-based nanoscale heterojunctions (heteronanostructural MOSs) from MOS nanomaterials. However, the sensing mechanism of heteronanostructural MOS-based sensors is different from that of single MOS-based gas sensors in that it is fairly complex. The performance of the sensors is influenced by various parameters, including the physical and chemical properties of the sensing materials (e.g., grain size, density of defects, and oxygen vacancies of materials), working temperatures, and device structures. This review introduces several concepts in the design of high-performance gas sensors by analyzing the sensing mechanism of heteronanostructural MOS-based sensors. In addition, the influence of the geometric device structure determined by the interconnection between the sensing materials and the working electrodes is discussed. To systematically investigate the sensing behavior of the sensor, the general sensing mechanism of three typical types of geometric device structures based on different heteronanostructural materials are introduced and discussed in this review. This review will provide guidelines for readers studying the sensing mechanism of gas sensors and designing high-performance gas sensors in the future.
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Affiliation(s)
- Lin Liu
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu China
| | - Yingyi Wang
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu China
- Department of Health and Environmental Sciences, Xi’an Jiaotong-Liverpool University, Suzhou, Jiangsu China
| | - Yinhang Liu
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu China
- Department of Nano Science and Nano Technology Institute, University of Science and Technology of China, Suzhou, Jiangsu China
| | - Shuqi Wang
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu China
| | - Tie Li
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu China
| | - Simin Feng
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu China
| | - Sujie Qin
- Department of Health and Environmental Sciences, Xi’an Jiaotong-Liverpool University, Suzhou, Jiangsu China
| | - Ting Zhang
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu China
- Nano-X, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, Jiangsu China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui PR China
- Gusu Laboratory of Materials, Suzhou, Jiangsu PR China
- Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai, PR China
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Adamu BI, Chen P, Chu W. Role of nanostructuring of sensing materials in performance of electrical gas sensors by combining with extra strategies. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/ac3636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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Casals O, Šutka A, Granz T, Waag A, Wasisto HS, Daniel Prades J, Fàbrega C. Visible Light-Driven p-Type Semiconductor Gas Sensors Based on CaFe 2O 4 Nanoparticles. SENSORS 2020; 20:s20030850. [PMID: 32033470 PMCID: PMC7038740 DOI: 10.3390/s20030850] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2020] [Revised: 01/29/2020] [Accepted: 01/31/2020] [Indexed: 01/24/2023]
Abstract
In this work, we present conductometric gas sensors based on p-type calcium iron oxide (CaFe2O4) nanoparticles. CaFe2O4 is a metal oxide (MOx) with a bandgap around 1.9 eV making it a suitable candidate for visible light-activated gas sensors. Our gas sensors were tested under a reducing gas (i.e., ethanol) by illuminating them with different light-emitting diode (LED) wavelengths (i.e., 465–640 nm). Regardless of their inferior response compared to the thermally activated counterparts, the developed sensors have shown their ability to detect ethanol down to 100 ppm in a reversible way and solely with the energy provided by an LED. The highest response was reached using a blue LED (465 nm) activation. Despite some responses found even in dark conditions, it was demonstrated that upon illumination the recovery after the ethanol exposure was improved, showing that the energy provided by the LEDs is sufficient to activate the desorption process between the ethanol and the CaFe2O4 surface.
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Affiliation(s)
- Olga Casals
- MIND-IN2UB, Department of Electronic and Biomedical Engineering, Universitat de Barcelona, 08028 Barcelona, Spain;
| | - Andris Šutka
- Research Laboratory of Functional Materials Technologies, Faculty of Materials Science and Applied Chemistry, Riga Technical University, 1048 Riga, Latvia;
| | - Tony Granz
- Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany; (T.G.); (A.W.); (H.S.W.)
| | - Andreas Waag
- Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany; (T.G.); (A.W.); (H.S.W.)
| | - Hutomo Suryo Wasisto
- Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, 38106 Braunschweig, Germany; (T.G.); (A.W.); (H.S.W.)
| | - Joan Daniel Prades
- MIND-IN2UB, Department of Electronic and Biomedical Engineering, Universitat de Barcelona, 08028 Barcelona, Spain;
- Correspondence: (Q.); (J.D.P.); (C.F.); Tel.: +34-934-039-159 (Q.)
| | - Cristian Fàbrega
- MIND-IN2UB, Department of Electronic and Biomedical Engineering, Universitat de Barcelona, 08028 Barcelona, Spain;
- Correspondence: (Q.); (J.D.P.); (C.F.); Tel.: +34-934-039-159 (Q.)
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Liu D, Chen Q, Chen A, Wu J. Self-powered gas sensor based on SiNWs/ITO photodiode. RSC Adv 2019; 9:23554-23559. [PMID: 35530595 PMCID: PMC9069332 DOI: 10.1039/c9ra02972a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/21/2019] [Accepted: 07/23/2019] [Indexed: 11/24/2022] Open
Abstract
Silicon nanowires (SiNWs) with a large surface-to-volume ratio and a low reflectivity are exceedingly attractive building blocks for developing high performance light harvesting devices. Herein, a SiNW/ITO heterojunction was fabricated easily by just compressing the SiNWs and ITO electrode together with a suitable pressure. Under light illumination, the SiNWs/ITO with an optimized structure can generate more than 20 μA photocurrent at zero bias voltage. In the mean time, the photocurrent is very sensitive to NO2 infiltration into the forest of SiNWs and displays a non-linear relationship with the concentration of NO2 from 0 to 1000 ppb. In comparison with chemiresistive sensors based on SiNWs only, the sensitivity of the self-powered sensor was improved obviously, showing a limit of detection at ∼5 ppb. The excellent light trapping and sensing performance was attributed to the heterojunction formed between SiNWs and ITO. Since the nano-photodiode device can monitor the surrounding gas without an external power supply, it will ensure that sensor networks can operate independently and sustainably without a battery or at least by extending the life time of a battery. This work may push forward the development of self-powered microsensors using rationally designed nanojunctions. A self-powered sensor formed by silicon nanowires/ITO heterojunction can output photocurrent which sensitively respond to NO2 gas under light illumination.![]()
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Affiliation(s)
- Dong Liu
- Institute of Analytical System
- Department of Chemistry
- Zhejiang University
- Hangzhou
- China
| | - Qiaofen Chen
- Institute of Analytical System
- Department of Chemistry
- Zhejiang University
- Hangzhou
- China
| | - Aimin Chen
- College of Chemical Engineering
- Zhejiang University of Technology
- Hangzhou 310014
- China
| | - Jianmin Wu
- Institute of Analytical System
- Department of Chemistry
- Zhejiang University
- Hangzhou
- China
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Liu XL, Zhu SW, Sun HB, Hu Y, Ma SX, Ning XJ, Zhao L, Zhuang J. "Infinite Sensitivity" of Black Silicon Ammonia Sensor Achieved by Optical and Electric Dual Drives. ACS APPLIED MATERIALS & INTERFACES 2018; 10:5061-5071. [PMID: 29338182 DOI: 10.1021/acsami.7b16542] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The microstructured and hyperdoped silicon as a superior photoelectric and photovoltaic material is first studied as a gas-sensing material. The material is prepared by femtosecond-laser irradiation on selenium-coated silicon and then fabricated as a conductive gas sensor, targeting ammonia. At room temperature, the sensitivity, response time, repeatability, distinguishability, selectivity, and natural aging effect of the sensor have been systematically studied. Results show that such black silicon has good potential for application as an ammonia-sensing material. On the basis of its unique optoelectronic properties, an additional optical drive is proposed for the formation of an optical and electric dual-driven sensor, which is achieved by asymmetric light illumination between the two electrode regions. In a certain range of applied voltage, the sensitivity is enhanced dramatically and even tends to be infinite. For the aged device with degraded sensitivity, a two-order increment is obtained for 500 ppm of NH3 under the extra optical drive. A mechanism based on Dember effect is proposed for explaining such a phenomenon.
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Affiliation(s)
- Xiao-Long Liu
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, ‡Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, and §Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Department of Nuclear Science and Technology, Fudan University , Shanghai 200433, China
| | - Su-Wan Zhu
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, ‡Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, and §Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Department of Nuclear Science and Technology, Fudan University , Shanghai 200433, China
| | - Hai-Bin Sun
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, ‡Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, and §Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Department of Nuclear Science and Technology, Fudan University , Shanghai 200433, China
| | - Yue Hu
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, ‡Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, and §Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Department of Nuclear Science and Technology, Fudan University , Shanghai 200433, China
| | - Sheng-Xiang Ma
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, ‡Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, and §Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Department of Nuclear Science and Technology, Fudan University , Shanghai 200433, China
| | - Xi-Jing Ning
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, ‡Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, and §Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Department of Nuclear Science and Technology, Fudan University , Shanghai 200433, China
| | - Li Zhao
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, ‡Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, and §Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Department of Nuclear Science and Technology, Fudan University , Shanghai 200433, China
| | - Jun Zhuang
- Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Department of Optical Science and Engineering, ‡Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, and §Applied Ion Beam Physics Laboratory, Institute of Modern Physics, Department of Nuclear Science and Technology, Fudan University , Shanghai 200433, China
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Zhang J, Qin Z, Zeng D, Xie C. Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration. Phys Chem Chem Phys 2018; 19:6313-6329. [PMID: 28198897 DOI: 10.1039/c6cp07799d] [Citation(s) in RCA: 133] [Impact Index Per Article: 22.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Metal-oxide-semiconductor (MOS) based gas sensors have been considered a promising candidate for gas detection over the past few years. However, the sensing properties of MOS-based gas sensors also need to be further enhanced to satisfy the higher requirements for specific applications, such as medical diagnosis based on human breath, gas detection in harsh environments, etc. In these fields, excellent selectivity, low power consumption, a fast response/recovery rate, low humidity dependence and a low limit of detection concentration should be fulfilled simultaneously, which pose great challenges to the MOS-based gas sensors. Recently, in order to improve the sensing performances of MOS-based gas sensors, more and more researchers have carried out extensive research from theory to practice. For a similar purpose, on the basis of the whole fabrication process of gas sensors, this review gives a presentation of the important role of screening and the recent developments in high throughput screening. Subsequently, together with the sensing mechanism, the factors influencing the sensing properties of MOSs involved in material preparation processes were also discussed in detail. It was concluded that the sensing properties of MOSs not only depend on the morphological structure (particle size, morphology, pore size, etc.), but also rely on the defect structure and heterointerface structure (grain boundaries, heterointerfaces, defect concentrations, etc.). Therefore, the material-sensor integration was also introduced to maintain the structural stability in the sensor fabrication process, ensuring the sensing stability of MOS-based gas sensors. Finally, the perspectives of the MOS-based gas sensors in the aspects of fundamental research and the improvements in the sensing properties are pointed out.
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Affiliation(s)
- Jian Zhang
- State Key Laboratory of Materials Processing and Die Mould Technology, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan 430074, China. and Hubei Collaborative Innovation Centre for Advanced Organic Chemical Materials, Wuhan 430062, China
| | - Ziyu Qin
- State Key Laboratory of Materials Processing and Die Mould Technology, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan 430074, China.
| | - Dawen Zeng
- State Key Laboratory of Materials Processing and Die Mould Technology, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan 430074, China. and Hubei Collaborative Innovation Centre for Advanced Organic Chemical Materials, Wuhan 430062, China
| | - Changsheng Xie
- State Key Laboratory of Materials Processing and Die Mould Technology, Huazhong University of Science and Technology (HUST), No. 1037, Luoyu Road, Wuhan 430074, China.
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Varezhnikov AS, Fedorov FS, Burmistrov IN, Plugin IA, Sommer M, Lashkov AV, Gorokhovsky AV, Nasibulin AG, Kuznetsov DV, Gorshenkov MV, Sysoev VV. The Room-Temperature Chemiresistive Properties of Potassium Titanate Whiskers versus Organic Vapors. NANOMATERIALS 2017; 7:nano7120455. [PMID: 29257073 PMCID: PMC5746944 DOI: 10.3390/nano7120455] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2017] [Revised: 12/02/2017] [Accepted: 12/11/2017] [Indexed: 11/16/2022]
Abstract
The development of portable gas-sensing units implies a special care of their power efficiency, which is often approached by operation at room temperature. This issue primarily appeals to a choice of suitable materials whose functional properties are sensitive toward gas vapors at these conditions. While the gas sensitivity is nowadays advanced by employing the materials at nano-dimensional domain, the room temperature operation might be targeted via the application of layered solid-state electrolytes, like titanates. Here, we report gas-sensitive properties of potassium titanate whiskers, which are placed over a multielectrode chip by drop casting from suspension to yield a matrix mono-layer of varied density. The material synthesis conditions are straightforward both to get stable single-crystalline quasi-one-dimensional whiskers with a great extent of potassium replacement and to favor the increase of specific surface area of the structures. The whisker layer is found to be sensitive towards volatile organic compounds (ethanol, isopropanol, acetone) in the mixture with air at room temperature. The vapor identification is obtained via processing the vector signal generated by sensor array of the multielectrode chip with the help of pattern recognition algorithms.
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Affiliation(s)
- Alexey S Varezhnikov
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov 410054, Russia.
| | - Fedor S Fedorov
- Laboratory of Nanomaterials, Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel str., Moscow 143026, Russia.
| | - Igor N Burmistrov
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov 410054, Russia.
- Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology MISiS, 4 Leninskiy pr., Moscow 119991, Russia.
| | - Ilya A Plugin
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov 410054, Russia.
| | - Martin Sommer
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 1 Hermann-von-Helmholtz Platz, 76344 Eggenstein-Leopoldshafen, Germany.
| | - Andrey V Lashkov
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov 410054, Russia.
| | - Alexander V Gorokhovsky
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov 410054, Russia.
| | - Albert G Nasibulin
- Laboratory of Nanomaterials, Skolkovo Institute of Science and Technology, Skolkovo Innovation Center, 3 Nobel str., Moscow 143026, Russia.
- Department of Applied Physics, Aalto University, Puumiehenkuja 2, 00076 Aalto, Finland.
| | - Denis V Kuznetsov
- Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology MISiS, 4 Leninskiy pr., Moscow 119991, Russia.
| | - Michail V Gorshenkov
- Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology MISiS, 4 Leninskiy pr., Moscow 119991, Russia.
| | - Victor V Sysoev
- Laboratory of Sensors and Microsystems, Yuri Gagarin State Technical University of Saratov, 77 Polytechnicheskaya str., Saratov 410054, Russia.
- Department of Functional Nanosystems and High-Temperature Materials, National University of Science and Technology MISiS, 4 Leninskiy pr., Moscow 119991, Russia.
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Xu F, Ho HP. Light-Activated Metal Oxide Gas Sensors: A Review. MICROMACHINES 2017; 8:mi8110333. [PMID: 30400523 PMCID: PMC6190203 DOI: 10.3390/mi8110333] [Citation(s) in RCA: 59] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/11/2017] [Revised: 11/08/2017] [Accepted: 11/13/2017] [Indexed: 11/16/2022]
Abstract
Conductometric gas sensors facilitated by photons have been investigated for decades. Light illumination may enhance device attributes including operational temperature, sensing sensitivity and selectivity. This paper aims to provide an overview on the progress of light-activated gas sensors, with a specific focus on sensors based on metal oxides. The material systems that have been studied include pure metal oxides, heterostructures of semiconductor-metal oxides and metal-metal oxides, and metal oxides with dopant. Other reported works on the use of different nanostructures such as one-dimensional and porous nanostructures, study of sensing mechanisms and the interplay between various factors are also summarized. Possible directions for further improvement of sensing properties, through optimizing the size of nanomaterials, film thickness, light intensity and wavelength are discussed. Finally, we point out that the main challenge faced by light-activated gas sensors is their low optical response, and we have analyzed the feasibility of using localized surface plasmon resonance to solve this drawback. This article should offer readers some key and instructive insights into the current and future development of light-activated gas sensors.
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Affiliation(s)
- Fang Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
| | - Ho-Pui Ho
- Department of Biomedical Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
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Gold-modified indium tin oxide as a transparent window in optoelectronic diagnostics of electrochemically active biofilms. Biosens Bioelectron 2017; 94:74-80. [DOI: 10.1016/j.bios.2017.02.042] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2016] [Revised: 01/28/2017] [Accepted: 02/23/2017] [Indexed: 11/23/2022]
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