Figure-of-Merit Characterization of Hydrogen-Bond Acidic Sorbents for Waveguide-Enhanced Raman Spectroscopy

Broadband near-infrared emission in silicon waveguides

Silicon photonic integrated circuit foundries enable wafer-level fabrication of entire electro-optic systems-on-a-chip for applications ranging from datacommunication to lidar to chemical sensing. However, silicon's indirect bandgap has so far prevented its use as an on-chip optical source for these systems. Here, we describe a fullyintegrated broadband silicon waveguide light source fabricated in a state-of-the-art 300-mm foundry. A reverse-biased p-i-n diode in a silicon waveguide emits broadband near-infrared optical radiation directly into the waveguide mode, resulting in nanowatts of guided optical power from a few milliamps of electrical current. We develop a one-dimensional Planck radiation model for intraband emission from hot carriers to theoretically describe the emission. The brightness of this radiation is demonstrated by using it for broadband characterization of photonic components including Mach-Zehnder interferometers and lattice filters, and for waveguide infrared absorption spectroscopy of liquid-phase analytes. This broadband silicon-based source can be directly integrated with waveguides and photodetectors with no change to existing foundry processes and is expected to find immediate application in optical systems-on-a-chip for metrology, spectroscopy, and sensing.

Foundry-based waveguide-enhanced Raman spectroscopy in the visible

Waveguide-enhanced Raman spectroscopy (WERS) is an analytical technique frequently employed for chemical and biological sensing. Operation at visible wavelengths to harness the inverse fourth power with excitation wavelength signal scaling of Raman scattering intensity is desirable, to combat the inherent inefficiency of Raman spectroscopy. Until now, WERS demonstrations in the visible have required custom materials and fabrication, resulting in high losses and low yields. In this work, we demonstrate a silicon nitride (SIN) visible WERS platform fabricated in a 300 mm complementary metal-oxide semiconductor (CMOS) foundry. We measure the propagation loss, coupling loss, WERS signal, and background for WERS spirals designed for 532 nm and 633 nm pump wavelengths. We compare these results to the state-of-the-art near-infrared WERS platform at 785 nm. Further, we theoretically validate the relative performance of each of these WERS configurations, and we discuss the optimal WERS configuration at visible wavelengths. We conclude that a configuration optimized for 785 nm pumping provides the greatest signal-to-background ratio in the fingerprint region of the spectrum, and pumping at 633 nm maximizes Stokes signal out to 3000 cm-1.

Waveguide-Enhanced Raman Spectroscopy (WERS): An Emerging Chip-Based Tool for Chemical and Biological Sensing

Photonic chip-based methods for spectroscopy are of considerable interest due to their applicability to compact, low-power devices for the detection of small molecules. Waveguide-enhanced Raman spectroscopy (WERS) has emerged over the past decade as a particularly interesting approach. WERS utilizes the evanescent field of a waveguide to generate Raman scattering from nearby analyte molecules, and then collects the scattered photons back into the waveguide. The large interacting area and strong electromagnetic field provided by the waveguide allow for significant enhancements in Raman signal over conventional approaches. The waveguide can also be coated with a molecular class-selective sorbent material to concentrate the analyte, thus further increasing the Raman signal. This review provides an overview of the historical development of WERS and highlights recent theoretical and experimental achievements with the technique.

Integrated Nanophotonic Waveguide-Based Devices for IR and Raman Gas Spectroscopy

On-chip devices for absorption spectroscopy and Raman spectroscopy have been developing rapidly in the last few years, triggered by the growing availability of compact and affordable tunable lasers, detectors, and on-chip spectrometers. Material processing that is compatible with mass production has been proven to be capable of long low-loss waveguides of sophisticated designs, which are indispensable for high-light-analyte interactions. Sensitivity and selectivity have been further improved by the development of sorbent cladding. In this review, we discuss the latest advances and challenges in the field of waveguide-enhanced Raman spectroscopy (WERS) and waveguide infrared absorption spectroscopy (WIRAS). The development of integrated light sources and detectors toward miniaturization will be presented, together with the recent advances on waveguides and cladding to improve sensitivity. The latest reports on gas-sensing applications and main configurations for WERS and WIRAS will be described, and the most relevant figures of merit and limitations of different sensor realizations summarized.

Passive photonic integration of lattice filters for waveguide-enhanced Raman spectroscopy

To perform waveguide-enhanced Raman spectroscopy (WERS) or fluorescence spectroscopy in a compact device, the optical fibers to couple the passive photonic circuit to the laser source and detector require attachment directly to the die. This necessitates the integration of edge couplers and waveguide-based filters to isolate the fiber background emission from the on-chip signal, while efficiently coupling the pump laser and detector to the input and output fibers, respectively. In this work, we experimentally demonstrate the successful integration of four-port lattice filters with sensing spirals and inverse-taper edge couplers in a passive photonic circuit. We further show that the four-port lattice filter enables the collection of backscattered on-chip Stokes signal, improving and simplifying overall system performance.