Solution-Based Fabrication of Polycrystalline Si Thin-Film Transistors from Recycled Polysilanes

Molecular Main Group Metal Hydrides

This review serves to document advances in the synthesis, versatile bonding, and reactivity of molecular main group metal hydrides within Groups 1, 2, and 12-16. Particular attention will be given to the emerging use of said hydrides in the rapidly expanding field of Main Group element-mediated catalysis. While this review is comprehensive in nature, focus will be given to research appearing in the open literature since 2001.

Direct writing of silicon nanostructures using liquid-phase electron beam induced deposition of hydrosilanes

Solid Si (wafer) and gaseous Si (silane) are generally used as starting materials for fabricating Si devices. In this study, a liquid precursor (liquid-phase hydrosilane) for semiconducting Si, called liquid Si (liq-Si), was synthesized to establish a liquid pathway for fabricating Si. Although the liquid-to-solid Si conversion can be induced by heating at 400 °C, conversion without heating was realized herein by electron-beam (EB) irradiation. This study is the first to irradiate liq-Si with EB. Size-controllable Si nanodots, with diameters of the order of 100 nm, were directly deposited at any point by liquid-phase electron-beam-induced deposition (LP-EBID) with a beam diameter of 50 nm. This approach yielded less-contaminated deposits at the detection limit of energy-dispersive x-ray spectroscopy, as opposed to typical EBID, wherein carbon impurities up to 90% are found. The processing resolution of LP-EBID is potentially 1 nm or less. Therefore, this non-heating deposition technique realizes the direct writing of Si nanostructures and would be a powerful tool for Si nanofabrication.

Strategically Controlled Flash Irradiation on Silicon Anode for Enhancing Cycling Stability and Rate Capability toward High-Performance Lithium-Ion Batteries

Si has attracted considerable interest as a promising anode material for next-generation Li-ion batteries owing to its outstanding specific capacity. However, the commercialization of Si anodes has been consistently limited by severe instabilities originating from their significant volume change (approximately 300%) during the charge-discharge process. Herein, we introduce an ultrafast processing strategy of controlled multi-pulse flash irradiation for stabilizing the Si anode by modifying its physical properties in a spatially stratified manner. We first provide a comprehensive characterization of the interactions between the anode materials and the flash irradiation, such as the condensation and carbonization of binders, sintering, and surface oxidation of the Si particles under various irradiation conditions (e.g., flash intensity and irradiation period). Then, we suggest an effective route for achieving superior physical properties for Si anodes, such as robust mechanical stability, high electrical conductivity, and fast electrolyte absorption, via precise adjustment of the flash irradiation. Finally, we demonstrate flash-irradiated Si anodes that exhibit improved cycling stability and rate capability without requiring costly synthetic functional binders or delicately designed nanomaterials. This work proposes a cost-effective technique for enhancing the performance of battery electrodes by substituting conventional long-term thermal treatment with ultrafast flash irradiation.

Inkjet Printing of Liquid Silicon

A precursor solution for semiconducting Si called liquid Si (liq-Si) is synthesized, and semiconducting Si is inkjet-printed. Satisfactory inkjet discharge is achieved using liq-Si consisting of liquid-phase polysilane with an average molecular weight of 2500 g mol^-1 . The printed liq-Si is converted into amorphous Si by heating at 400 °C. The resulting Si film has a flat surface with a root-mean-square roughness of 0.8 nm. These results are extended to n- and p-type Si films by synthesizing liq-Si chemically doped with P and B compounds, respectively. Liq-Si inkjet printing produces Si patterns without using traditional photolithography processes, opening up the field of printed Si electronics.