Enhanced photoluminescence and photoconductivity of ZnO nanowires with sputtered Zn

Plasmon expedited response time and enhanced response in gold nanoparticles-decorated zinc oxide nanowire-based nitrogen dioxide gas sensor at room temperature

A highly sensitive and rapidly responsive nitrogen dioxide (NO₂) gas sensor based on gold (Au) nanoparticles (NPs)-decorated zinc oxide (ZnO) nanowires (NWs) is presented. The Au NPs decoration was conducted onto ZnO NWs with and without a (3-aminopropyl)triethoxysilane (APTES) layer on their surface by using the electrostatic force. The samples without the APTES layer exhibited high NO₂ gas sensitivity (i.e. expedited response time and enhanced gas response) due to localized surface plasmon resonance (LSPR) of the Au NPs; in particular, the NO₂ gas response and the response time were increased by three times and shortened by 86%, respectively, compared with the undecorated ZnO NWs. The presence of the APTES layer improved the Au NPs attachment, but hindering the gas adsorption on the ZnO NWs surface, as proven by the observed photocurrent and gas response. Our findings imply that the response time of semiconductor gas sensors can be remarkably expedited by the LSPR effect, which is useful for developing practical gas sensors.

Redistribution of native defects and photoconductivity in ZnO under pressure

Control and design of native defects in semiconductors are extremely important for industrial applications. Here, we investigated the effect of external hydrostatic pressure on the redistribution of native defects and their impact on structural phase transitions and photoconductivity in ZnO. We investigated morphologically distinct rod- (ZnO-R) and flower-like (ZnO-F) ZnO microstructures where the latter contains several native defects namely, oxygen vacancies, zinc interstitials and oxygen interstitials. Synchrotron X-ray diffraction reveals pressure-induced irreversible phase transformation of ZnO-F with the emergence of a hexagonal metallic Zn phase due to enhanced diffusion of interstitial Zn during decompression. In contrast, ZnO-R undergoes a reversible structural phase transition displaying a large hysteresis during decompression. We evidenced that the pressure-induced strain and inhomogeneous distribution of defects play crucial roles at structural phase transition. Raman spectroscopy and emission studies further confirm that the recovered ZnO-R appears less defective than ZnO-F. It resulted in lower photocurrent gain and slower photoresponse during time-dependent transient photoresponse with the synergistic application of pressure and illumination (ultra-violet). While successive pressure treatments improved the photoconductivity in ZnO-R, ZnO-F failed to recover even its ambient photoresponse. Pressure-induced redistribution of native defects and the optoelectronic response in ZnO might provide new opportunities in promising semiconductors.

Amplified photoelectrochemical immunoassay for the tumor marker carbohydrate antigen 724 based on dye sensitization of the semiconductor composite C3N4-MoS2

The authors describe an amplified photoelectrochemical immunoassay for the tumor marker carbohydrate antigen 724 (CA724). The method employs a C₃N₄-MoS₂ semiconductor as the photoelectric conversion layer. The nanocomposite was characterized by transmission electron microscopy, Fourier transform infrared spectroscopy, X-ray powder diffraction, and UV-vis diffuse reflectometry. The dye eosin Y was encapsulated into CaCO₃ nanospheres which then were used as labels for antibody against CA724. In addition, Fe₃O₄ nanospheres were employed as magnetic platform for constructing photoelectrochemical sandwich immunoassay. The CaCO₃ nanospheres can be dissolved with aid of ethylene diamine tetraacetic acid (EDTA) and the carried eosin Y in CaCO₃ is released. The released dyes sensitizes the C₃N₄-MoS₂ semiconductor, which induces photocurrent amplification. Under optimal conditions and at a typical working voltage of 0 V (vs. SCE), the photocurrent increases linearly in the range of 0.05 mU mL^-1 to 500 mU mL^-1 of CA724, with a 0.02 mU mL^-1 detection limit. Graphical abstract The C₃N₄-MoS₂ complex, with high efficiency of electron transport, was synthesized to construct a photoelectrochemical analytical platform. A sandwich-type immunoassay was established on the surface of magnetic beads. Carbohydrate antigen 724 in sample was detected sensitively by using sensitization of released eosin Y as signal amplifiery.

Clarifying the high on/off ratio mechanism of nanowire UV photodetector by characterizing surface barrier height

The response of semiconductor nanowire UV sensors represented by ZnO nanowire UV sensor is usually explained by the adsorption and desorption of oxygen molecules, but with the great increase of these sensors' on/off ratio in recent years, this explanation is inadequate and the inner mechanism for the large on/off ratio urgently needs to be explored. Here, the distribution of carrier concentration in a ZnO nanowire is found to be determined as a function of the radius of the nanowire, using a calibrated surface photovoltage method and space charge model. A critical radius is indicated which determines the carrier concentration and photoresponse behavior of the nanowire. When the radius is below this critical value, the carrier concentration in the dark decreases dramatically compared with that of the nanowire under UV light illumination. Specifically, a decrease of carrier concentration by 4-5 orders of magnitude occurs when the radius is below 50 nm, which causes the on/off ratio to vary by the same orders of magnitude. When the radius is above the critical value, the influence of radius on carrier concentration is nonsignificant and the on/off ratio is below 100. Finally, we found that the high on/off ratio of the ZnO nanowire should be ascribed to the complete depletion of the nanowire led by the interplay of radius and surface band bending rather than the change in width of the depletion layer as most papers have suggested.

Visible-light-responsive TiO2-coated ZnO:I nanorod array films with enhanced photoelectrochemical and photocatalytic performance

Control of structural and compositional characteristics during fabrication of a versatile visible-light active ZnO-based photocatalyst is a crucial step toward improving photocatalytic pollutant degradation processes. In this work, we report a multifunctional photocatalytic electrode, i.e., TiO2 coated ZnO:I nanorods (ZnO:I/TiO2 NRs) array films, fabricated via a hydrothermal method and a subsequent wet-chemical process. This type of hybrid photocatalytic film not only enhances light absorption with the incorporation of iodine but also possesses increased electron transport capability and excellent chemical stability arising from the unique TiO2-coated 1D structure. Owing to these synergic advantages, the degradation efficiency of the ZnO:I samples reached ∼97% after irradiation for 6 h, an efficiency 62% higher than that of pure ZnO. For RhB photocatalytic degradation experiments in both acidic (pH = 3) and alkaline (pH = 11) solutions, as well as in repeat photodegradation experiments, the ZnO:I/TiO2 NRs films demonstrated high stability and durability under visible-light irradiation. Thus, ZnO:I/TiO2 NRs are considered a promising photocatalytic material to degrade organic pollutants in aqueous eco-environments.

A successive photocurrent transient study to probe the sub-band gap electron and hole traps in ZnO nanorods

Probing of the sub-band gap electron and hole traps in ZnO nanorods has been carried out using a simple technique of successive photocurrent transients.

Violet emission in ZnO nanorods treated with high-energy hydrogen plasma

Violet photoluminescence was observed in high-energy hydrogen-plasma-treated ZnO nanorods at 13 K. The photoluminescence spectrum is dominated by a strong violet emission and a shoulder attributed to excitonic emission. The violet emission shows normal thermal behavior with an average lifetime of about 1 μs at 13 K. According to the time-resolved and excitation density-dependent photoluminescence, it was found that the violet emission is determined by at least two emitting channels, which was confirmed by annealing experiments. Evidence was also given that the violet emission is related to hydrogen. We suggested that the hydrogen-related complex defects formed under high-energy hydrogen plasma treatment are responsible for this violet emission.

Metal-free doping process to enhance the conductivity of zinc oxide nanorods retaining the transparency

The well-ordered metal oxide nanostructures can be synthesized successfully, but the conductance of these structures is limited, which is a disadvantage for applying these in photovoltaic and display devices. Conductivity of a semiconductor can be improved by using metal doping, but the issue becomes a major challenge in nanostructures since their high surface energy usually hinders any metal doping process. Here we show an entirely new metal-free doping strategy to enhance the current conduction of ZnO nanorods' (NRs) arrays through a sulphidation technique. The process is based on the electronegativity difference between S and O because of which one can expect a rigorous bond rearrangement at the interface and a ZnOS-ZnS composite is formed as O is being partially replaced by S. The current conduction by the metal oxide NRs arrays is significantly enhanced by nearly 4 orders of magnitude without sacrificing the transparency of the NRs arrays. The increased current conduction is assigned due to an increase in the Zn(i) concentration as evidenced from the electron paramagnetic resonance measurements. The composite layer grown on p-Si forms a photodiode which is highly sensitive to visible light with a very fast response time.

Synthesis of nestlike ZnO hierarchically porous structures and analysis of their gas sensing properties

Nestlike 3D ZnO porous structures with size of 1.0-3.0 μm have been synthesized through annealing the zinc hydroxide carbonate precursor, which was obtained by a one-pot hydrothermal process with the assistance of glycine, Na(2)SO(4), and polyvinyl pyrrolidone (PVP). The nestlike 3D ZnO structures are built of 2D nanoflakes with the thickness of ca. 20 nm, which exhibit the nanoporous wormhole-like characteristic. The measured surface area is 36.4 m(2)g(-1) and the pore size is ca. 3-40 nm. The unique nestlike 3D ZnO porous structures provided large contacting surface area for electrons, oxygen and target gas molecules, and abundant channels for gas diffusion and mass transport. Gas sensing tests showed that the nestlike 3D ZnO porous structures exhibit excellent gas sensing performances such as high sensitivity and fast response and recovery speed, suggesting the potential applications as advanced gas sensing materials.

Enhanced near band edge luminescence of Ti/ZnO nanorod heterostructures due to the surface diffusion of Ti

Information on the mechanistic differences in the luminescence properties of Ti/ZnO nanorods (NRs) has been obtained through the preparation of heterostructures by (a) varying the thickness of Ti from 1 nm to 20 nm keeping the substrate temperature at 400 °C, (b) varying the substrate temperature from room temperature (RT) to 500 °C while keeping the metal thickness constant at 10 nm and (c) annealing the RT Ti sputtered NRs at temperatures of 400 °C and 500 °C. The photoluminescence (PL) spectra show that the near band edge luminescence of ZnO in the ultraviolet (UV) region is enhanced as the thickness of Ti increases up to 5 nm and, thereafter, it falls. Sputtering of Ti on ZnO NRs at RT does not cause any UV enhancement but when sputtered at and above 400 °C, the UV intensity is enhanced. Annealing of RT Ti sputtered NRs at and above 400 °C also results in the enhancement of the UV peak, although with a lesser magnitude. Analysis of the PL results, supported by X-ray diffraction, field emission scanning electron microscopy, elemental mapping, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy and electrical I-V measurement results, show a clear indication that the surface diffusion of Ti causes a reduction in the surface defects.