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Chen H, Xu C, Ding J, Fu H, Jin Y. Cap‐Like Ellipsoid Deposition on the ZnO Nanowires for Large Increase of Fluorescence Induced by Localized Field Enhancement Effect. CRYSTAL RESEARCH AND TECHNOLOGY 2022. [DOI: 10.1002/crat.202100271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Haixia Chen
- Shaanxi Key Laboratory of Measurement and Control Technology for Oil and Gas Wells College of Science Xi'an Shiyou University Xi'an Shaanxi 710065 China
| | - Chao Xu
- Shaanxi Key Laboratory of Measurement and Control Technology for Oil and Gas Wells College of Science Xi'an Shiyou University Xi'an Shaanxi 710065 China
| | - Jijun Ding
- Shaanxi Key Laboratory of Measurement and Control Technology for Oil and Gas Wells College of Science Xi'an Shiyou University Xi'an Shaanxi 710065 China
| | - Haiwei Fu
- Shaanxi Key Laboratory of Measurement and Control Technology for Oil and Gas Wells College of Science Xi'an Shiyou University Xi'an Shaanxi 710065 China
| | - Yanxin Jin
- Shaanxi Key Laboratory of Measurement and Control Technology for Oil and Gas Wells College of Science Xi'an Shiyou University Xi'an Shaanxi 710065 China
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Plasmon expedited response time and enhanced response in gold nanoparticles-decorated zinc oxide nanowire-based nitrogen dioxide gas sensor at room temperature. J Colloid Interface Sci 2020; 582:658-668. [PMID: 32911413 DOI: 10.1016/j.jcis.2020.08.082] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2020] [Revised: 08/20/2020] [Accepted: 08/24/2020] [Indexed: 12/14/2022]
Abstract
A highly sensitive and rapidly responsive nitrogen dioxide (NO2) gas sensor based on gold (Au) nanoparticles (NPs)-decorated zinc oxide (ZnO) nanowires (NWs) is presented. The Au NPs decoration was conducted onto ZnO NWs with and without a (3-aminopropyl)triethoxysilane (APTES) layer on their surface by using the electrostatic force. The samples without the APTES layer exhibited high NO2 gas sensitivity (i.e. expedited response time and enhanced gas response) due to localized surface plasmon resonance (LSPR) of the Au NPs; in particular, the NO2 gas response and the response time were increased by three times and shortened by 86%, respectively, compared with the undecorated ZnO NWs. The presence of the APTES layer improved the Au NPs attachment, but hindering the gas adsorption on the ZnO NWs surface, as proven by the observed photocurrent and gas response. Our findings imply that the response time of semiconductor gas sensors can be remarkably expedited by the LSPR effect, which is useful for developing practical gas sensors.
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Das PP, Samanta S, Wang L, Kim J, Vogt T, Devi PS, Lee Y. Redistribution of native defects and photoconductivity in ZnO under pressure. RSC Adv 2019; 9:4303-4313. [PMID: 35520174 PMCID: PMC9060558 DOI: 10.1039/c8ra10219h] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2018] [Accepted: 01/25/2019] [Indexed: 11/21/2022] Open
Abstract
Control and design of native defects in semiconductors are extremely important for industrial applications. Here, we investigated the effect of external hydrostatic pressure on the redistribution of native defects and their impact on structural phase transitions and photoconductivity in ZnO. We investigated morphologically distinct rod- (ZnO-R) and flower-like (ZnO-F) ZnO microstructures where the latter contains several native defects namely, oxygen vacancies, zinc interstitials and oxygen interstitials. Synchrotron X-ray diffraction reveals pressure-induced irreversible phase transformation of ZnO-F with the emergence of a hexagonal metallic Zn phase due to enhanced diffusion of interstitial Zn during decompression. In contrast, ZnO-R undergoes a reversible structural phase transition displaying a large hysteresis during decompression. We evidenced that the pressure-induced strain and inhomogeneous distribution of defects play crucial roles at structural phase transition. Raman spectroscopy and emission studies further confirm that the recovered ZnO-R appears less defective than ZnO-F. It resulted in lower photocurrent gain and slower photoresponse during time-dependent transient photoresponse with the synergistic application of pressure and illumination (ultra-violet). While successive pressure treatments improved the photoconductivity in ZnO-R, ZnO-F failed to recover even its ambient photoresponse. Pressure-induced redistribution of native defects and the optoelectronic response in ZnO might provide new opportunities in promising semiconductors.
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Affiliation(s)
- Partha Pratim Das
- Department of Earth System Sciences, Yonsei University Seoul 120749 Korea
| | - Sudeshna Samanta
- Center for High Pressure Science and Technology Advanced Research Shanghai China
- Department of Physics, Hanyang University Seoul 133791 Korea
| | - Lin Wang
- Center for High Pressure Science and Technology Advanced Research Shanghai China
| | - Jaeyong Kim
- Department of Physics, Hanyang University Seoul 133791 Korea
| | - Thomas Vogt
- Nano Center & Department of Chemistry and Biochemistry, University of South Carolina Columbia SC 29208 USA
| | - P Sujatha Devi
- Sensor and Actuator Division, CSIR-Central Glass and Ceramic Research Institute Kolkata 700032 India
| | - Yongjae Lee
- Department of Earth System Sciences, Yonsei University Seoul 120749 Korea
- Center for High Pressure Science and Technology Advanced Research Shanghai China
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Amplified photoelectrochemical immunoassay for the tumor marker carbohydrate antigen 724 based on dye sensitization of the semiconductor composite C 3N 4-MoS 2. Mikrochim Acta 2018; 185:530. [PMID: 30402791 DOI: 10.1007/s00604-018-3054-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2018] [Accepted: 10/16/2018] [Indexed: 02/03/2023]
Abstract
The authors describe an amplified photoelectrochemical immunoassay for the tumor marker carbohydrate antigen 724 (CA724). The method employs a C3N4-MoS2 semiconductor as the photoelectric conversion layer. The nanocomposite was characterized by transmission electron microscopy, Fourier transform infrared spectroscopy, X-ray powder diffraction, and UV-vis diffuse reflectometry. The dye eosin Y was encapsulated into CaCO3 nanospheres which then were used as labels for antibody against CA724. In addition, Fe3O4 nanospheres were employed as magnetic platform for constructing photoelectrochemical sandwich immunoassay. The CaCO3 nanospheres can be dissolved with aid of ethylene diamine tetraacetic acid (EDTA) and the carried eosin Y in CaCO3 is released. The released dyes sensitizes the C3N4-MoS2 semiconductor, which induces photocurrent amplification. Under optimal conditions and at a typical working voltage of 0 V (vs. SCE), the photocurrent increases linearly in the range of 0.05 mU mL-1 to 500 mU mL-1 of CA724, with a 0.02 mU mL-1 detection limit. Graphical abstract The C3N4-MoS2 complex, with high efficiency of electron transport, was synthesized to construct a photoelectrochemical analytical platform. A sandwich-type immunoassay was established on the surface of magnetic beads. Carbohydrate antigen 724 in sample was detected sensitively by using sensitization of released eosin Y as signal amplifiery.
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Nagovitsyn IA, Chudinova GK, Lobanov AV, Boruleva EA, Moshnikov VA, Nalimova SS, Kononova IE. Enhancement of Fluorescence of Nanosized ZnO: SiO2 Films in the Presence of Human Serum Albumin. RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B 2018. [DOI: 10.1134/s1990793118040292] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Li G, Meng L, Zhu X, Gao W, Qin Y, Chen L. Clarifying the high on/off ratio mechanism of nanowire UV photodetector by characterizing surface barrier height. NANOSCALE 2018; 10:2242-2248. [PMID: 29340406 DOI: 10.1039/c7nr08652k] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The response of semiconductor nanowire UV sensors represented by ZnO nanowire UV sensor is usually explained by the adsorption and desorption of oxygen molecules, but with the great increase of these sensors' on/off ratio in recent years, this explanation is inadequate and the inner mechanism for the large on/off ratio urgently needs to be explored. Here, the distribution of carrier concentration in a ZnO nanowire is found to be determined as a function of the radius of the nanowire, using a calibrated surface photovoltage method and space charge model. A critical radius is indicated which determines the carrier concentration and photoresponse behavior of the nanowire. When the radius is below this critical value, the carrier concentration in the dark decreases dramatically compared with that of the nanowire under UV light illumination. Specifically, a decrease of carrier concentration by 4-5 orders of magnitude occurs when the radius is below 50 nm, which causes the on/off ratio to vary by the same orders of magnitude. When the radius is above the critical value, the influence of radius on carrier concentration is nonsignificant and the on/off ratio is below 100. Finally, we found that the high on/off ratio of the ZnO nanowire should be ascribed to the complete depletion of the nanowire led by the interplay of radius and surface band bending rather than the change in width of the depletion layer as most papers have suggested.
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Affiliation(s)
- Gaoda Li
- Institute of Nanoscience and Nanotechnology, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China. qinyong @lzu.edu.cn
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Wang Y, Zheng YZ, Lu S, Tao X, Che Y, Chen JF. Visible-light-responsive TiO2-coated ZnO:I nanorod array films with enhanced photoelectrochemical and photocatalytic performance. ACS APPLIED MATERIALS & INTERFACES 2015; 7:6093-6101. [PMID: 25742121 DOI: 10.1021/acsami.5b00980] [Citation(s) in RCA: 44] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Control of structural and compositional characteristics during fabrication of a versatile visible-light active ZnO-based photocatalyst is a crucial step toward improving photocatalytic pollutant degradation processes. In this work, we report a multifunctional photocatalytic electrode, i.e., TiO2 coated ZnO:I nanorods (ZnO:I/TiO2 NRs) array films, fabricated via a hydrothermal method and a subsequent wet-chemical process. This type of hybrid photocatalytic film not only enhances light absorption with the incorporation of iodine but also possesses increased electron transport capability and excellent chemical stability arising from the unique TiO2-coated 1D structure. Owing to these synergic advantages, the degradation efficiency of the ZnO:I samples reached ∼97% after irradiation for 6 h, an efficiency 62% higher than that of pure ZnO. For RhB photocatalytic degradation experiments in both acidic (pH = 3) and alkaline (pH = 11) solutions, as well as in repeat photodegradation experiments, the ZnO:I/TiO2 NRs films demonstrated high stability and durability under visible-light irradiation. Thus, ZnO:I/TiO2 NRs are considered a promising photocatalytic material to degrade organic pollutants in aqueous eco-environments.
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Affiliation(s)
- Yuan Wang
- †State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yan-Zhen Zheng
- †State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Siqi Lu
- †State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Xia Tao
- †State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yanke Che
- ‡Beijing National Laboratory for Molecular Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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Mahanti M, Basak D. Enhanced emission properties of Au/SiO2/ZnO nanorod layered structure: effect of SiO2 spacer layer and role of interfacial charge transfer. RSC Adv 2014. [DOI: 10.1039/c4ra00950a] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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Sett D, Sarkar S, Basak D. A successive photocurrent transient study to probe the sub-band gap electron and hole traps in ZnO nanorods. RSC Adv 2014. [DOI: 10.1039/c4ra11986j] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Probing of the sub-band gap electron and hole traps in ZnO nanorods has been carried out using a simple technique of successive photocurrent transients.
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Affiliation(s)
- Dipanwita Sett
- Department of Solid State Physics
- Indian Association for the Cultivation of Science
- Kolkata 700032, India
| | - Sanjit Sarkar
- Department of Solid State Physics
- Indian Association for the Cultivation of Science
- Kolkata 700032, India
| | - Durga Basak
- Department of Solid State Physics
- Indian Association for the Cultivation of Science
- Kolkata 700032, India
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Chen C, Lu Y, He H, Xiao M, Wang Z, Chen L, Ye Z. Violet emission in ZnO nanorods treated with high-energy hydrogen plasma. ACS APPLIED MATERIALS & INTERFACES 2013; 5:10274-10279. [PMID: 24066677 DOI: 10.1021/am403133u] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Violet photoluminescence was observed in high-energy hydrogen-plasma-treated ZnO nanorods at 13 K. The photoluminescence spectrum is dominated by a strong violet emission and a shoulder attributed to excitonic emission. The violet emission shows normal thermal behavior with an average lifetime of about 1 μs at 13 K. According to the time-resolved and excitation density-dependent photoluminescence, it was found that the violet emission is determined by at least two emitting channels, which was confirmed by annealing experiments. Evidence was also given that the violet emission is related to hydrogen. We suggested that the hydrogen-related complex defects formed under high-energy hydrogen plasma treatment are responsible for this violet emission.
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Affiliation(s)
- Cong Chen
- State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University , Hangzhou 310027, People's Republic of China
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Panigrahi S, Sarkar S, Basak D. Metal-free doping process to enhance the conductivity of zinc oxide nanorods retaining the transparency. ACS APPLIED MATERIALS & INTERFACES 2012; 4:2709-2716. [PMID: 22551247 DOI: 10.1021/am300348g] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The well-ordered metal oxide nanostructures can be synthesized successfully, but the conductance of these structures is limited, which is a disadvantage for applying these in photovoltaic and display devices. Conductivity of a semiconductor can be improved by using metal doping, but the issue becomes a major challenge in nanostructures since their high surface energy usually hinders any metal doping process. Here we show an entirely new metal-free doping strategy to enhance the current conduction of ZnO nanorods' (NRs) arrays through a sulphidation technique. The process is based on the electronegativity difference between S and O because of which one can expect a rigorous bond rearrangement at the interface and a ZnOS-ZnS composite is formed as O is being partially replaced by S. The current conduction by the metal oxide NRs arrays is significantly enhanced by nearly 4 orders of magnitude without sacrificing the transparency of the NRs arrays. The increased current conduction is assigned due to an increase in the Zn(i) concentration as evidenced from the electron paramagnetic resonance measurements. The composite layer grown on p-Si forms a photodiode which is highly sensitive to visible light with a very fast response time.
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Affiliation(s)
- Shrabani Panigrahi
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
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Ghosh T, Basak D. Controlling the electrical property of highly transparent conducting film of Zn coated Al doped ZnO by mechano-chemical pathway of face-to-face annealing. Chem Phys Lett 2012. [DOI: 10.1016/j.cplett.2012.01.029] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Wang X, Liu W, Liu J, Wang F, Kong J, Qiu S, He C, Luan L. Synthesis of nestlike ZnO hierarchically porous structures and analysis of their gas sensing properties. ACS APPLIED MATERIALS & INTERFACES 2012; 4:817-25. [PMID: 22216881 DOI: 10.1021/am201476b] [Citation(s) in RCA: 60] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Nestlike 3D ZnO porous structures with size of 1.0-3.0 μm have been synthesized through annealing the zinc hydroxide carbonate precursor, which was obtained by a one-pot hydrothermal process with the assistance of glycine, Na(2)SO(4), and polyvinyl pyrrolidone (PVP). The nestlike 3D ZnO structures are built of 2D nanoflakes with the thickness of ca. 20 nm, which exhibit the nanoporous wormhole-like characteristic. The measured surface area is 36.4 m(2)g(-1) and the pore size is ca. 3-40 nm. The unique nestlike 3D ZnO porous structures provided large contacting surface area for electrons, oxygen and target gas molecules, and abundant channels for gas diffusion and mass transport. Gas sensing tests showed that the nestlike 3D ZnO porous structures exhibit excellent gas sensing performances such as high sensitivity and fast response and recovery speed, suggesting the potential applications as advanced gas sensing materials.
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Affiliation(s)
- Xinzhen Wang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education and School of Materials Science and Engineering, Shandong University, Jinan, Shandong 250061, People's Republic of China
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Sarkar S, Basak D. A low temperature in situ facile technique to enhance ultraviolet emission of zinc oxide nanorods and its mechanistic insights. Chem Phys Lett 2011. [DOI: 10.1016/j.cplett.2011.09.070] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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Mahanti M, Ghosh T, Basak D. Enhanced near band edge luminescence of Ti/ZnO nanorod heterostructures due to the surface diffusion of Ti. NANOSCALE 2011; 3:4427-4433. [PMID: 21931902 DOI: 10.1039/c1nr10937e] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Information on the mechanistic differences in the luminescence properties of Ti/ZnO nanorods (NRs) has been obtained through the preparation of heterostructures by (a) varying the thickness of Ti from 1 nm to 20 nm keeping the substrate temperature at 400 °C, (b) varying the substrate temperature from room temperature (RT) to 500 °C while keeping the metal thickness constant at 10 nm and (c) annealing the RT Ti sputtered NRs at temperatures of 400 °C and 500 °C. The photoluminescence (PL) spectra show that the near band edge luminescence of ZnO in the ultraviolet (UV) region is enhanced as the thickness of Ti increases up to 5 nm and, thereafter, it falls. Sputtering of Ti on ZnO NRs at RT does not cause any UV enhancement but when sputtered at and above 400 °C, the UV intensity is enhanced. Annealing of RT Ti sputtered NRs at and above 400 °C also results in the enhancement of the UV peak, although with a lesser magnitude. Analysis of the PL results, supported by X-ray diffraction, field emission scanning electron microscopy, elemental mapping, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy and electrical I-V measurement results, show a clear indication that the surface diffusion of Ti causes a reduction in the surface defects.
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Affiliation(s)
- Moumita Mahanti
- Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
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Zhang J, Chen X, Jiang K, Shen Y, Li Y, Hu Z, Chu J. Evolution of orientation degree, lattice dynamics and electronic band structure properties in nanocrystalline lanthanum-doped bismuth titanate ferroelectric films by chemical solution deposition. Dalton Trans 2011; 40:7967-75. [DOI: 10.1039/c1dt10443h] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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