Zinc oxide nanowire photodetectors with single-walled carbon nanotube thin-film electrodes

Surface modification of ZnO nanowires using single walled carbon nanotubes for efficient UV-visible broadband photodetection

A UV-visible broadband photodetector (PD) based on single walled carbon nanotube (SWCNT)/Zinc oxide nanowire (ZnO NW) hybrid is being reported. This work focuses on designing a stable, fast, efficient and reliable hybrid broadband PD by surface modification of ZnO NWs using SWCNT. The study shows that spectral response of the hybrid heterostructure (HS) spans beyond the UV spectrum and into the visible region which is due to the integration of SWCNTs. Photoluminescence (PL) study reveals surface plasmon (SP) mediated resonance phenomenon resulting in an increase in PL intensity. High nanotube charge carrier mobility and conductivity allows the hybrid HS to attain high values of spectral responsivity (Rλ= 187.77 A W-1), external quantum efficiency (EQE = 5.82 × 104%), specific detectivity (D* = 7.04 × 1011Jones) and small noise equivalent power (NEP = 4.77 × 10-12W) values for the SWCNT/ZnO NW hybrid HS. The device also gives quick rise (trise= 0.43 s) and fall (tfall= 0.60 s) time values.

Acid-modified CNT/Zinc Oxide nanowires based high performance broadband photodetector

In this study, the authors have reported the impact of post-treatment via exposure to acid on single walled carbon nanotubes (SWNTs) thin film (TF) based SWNT/ZnO Nanowire (NW) broad band photodetector. The ZnO NWs were deposited on SWNT (with and without acid-treated) using a simple catalytic free process called glancing angle deposition (GLAD) technique. Acid-treated SWNT samples warranted the growth of high quality ZnO NWs over them. On fabricating photodetectors with the acid-treated ZnO NW/SWNT TF heterostructure (HS) gave better device performance as compared to the as-deposited ZnO NW/SWNT TF HS (without acid-treatment) sample. The acid-treated device showed a large responsivity (85.45 A/W), specific detectivity (0.859 × 10¹² Jones) and with a low noise equivalent power of 3.9101 pW values. Moreover, the oxygen adsorption-desorption mechanism in SWNTs impacted the electrical resistance of the nanotubes which affected nanotube conductivity. The acid-treatment favoured relatively faster charge separation at the ZnO NW/SWNT heterojunction thus providing a fast device response (t_rise = 0.11 s, t_fall = 0.39 s at + 5 V). The fabricated acid-treated device showed good broad band detection (250 nm-750 nm) which was explained with respect to the optical absorption profile of the sample.

Recent advances in development of nanostructured photodetectors from ultraviolet to infrared region: A review

Herein, we aim to evaluate the photodetector performance of various nanostructured materials (thin films, 2-D nanolayers, 1-D nanowires, and 0-D quantum dots) in ultraviolet (UV), visible, and infrared (IR) regions. Specifically, semiconductor-based metal oxides such as ZnO, Ga₂O₃, SnO₂, TiO₂, and WO₃ are the majority preferred materials for UV photodetection due to their broad band gap, stability, and relatively simple fabrication processes. Whereas, the graphene-based hetero- and nano-structured composites are considered as prominent visible light active photodetectors. Interestingly, graphene exhibits broad band spectral absorption and ultra-high mobility, which derives graphene as a suitable candidate for visible detector. Further, due to the very low absorption rate of graphene (2%), various materials have been integrated with graphene (rGO-CZS, PQD-rGO, N-SLG, and GO doped PbI₂). In the case of IR photodetectors, quantum dot IR detectors prevails significant advantage over the quantum well IR detectors due to the 0-D quantum confinement and ability to absorb the light with any polarization. In such a way, we discussed the most recent developments on IR detectors using InAs and PbS quantum dot nanostructures. Overall, this review gives clear view on the development of suitable device architecture under prominent nanostructures to tune the photodetector performance from UV to IR spectral regions for wide-band photodetectors.

Two-Dimensional Gallium Sulfide Nanoflakes for UV-Selective Photoelectrochemical-type Photodetectors

Two-dimensional (2D) transition-metal monochalcogenides have been recently predicted to be potential photo(electro)catalysts for water splitting and photoelectrochemical (PEC) reactions. Differently from the most established InSe, GaSe, GeSe, and many other monochalcogenides, bulk GaS has a large band gap of ∼2.5 eV, which increases up to more than 3.0 eV with decreasing its thickness due to quantum confinement effects. Therefore, 2D GaS fills the void between 2D small-band-gap semiconductors and insulators, resulting of interest for the realization of van der Waals type-I heterojunctions in photocatalysis, as well as the development of UV light-emitting diodes, quantum wells, and other optoelectronic devices. Based on theoretical calculations of the electronic structure of GaS as a function of layer number reported in the literature, we experimentally demonstrate, for the first time, the PEC properties of liquid-phase exfoliated GaS nanoflakes. Our results indicate that solution-processed 2D GaS-based PEC-type photodetectors outperform the corresponding solid-state photodetectors. In fact, the 2D morphology of the GaS flakes intrinsically minimizes the distance between the photogenerated charges and the surface area at which the redox reactions occur, limiting electron-hole recombination losses. The latter are instead deleterious for standard solid-state configurations. Consequently, PEC-type 2D GaS photodetectors display a relevant UV-selective photoresponse. In particular, they attain responsivities of 1.8 mA W^-1 in 1 M H₂SO₄ [at 0.8 V vs reversible hydrogen electrode (RHE)], 4.6 mA W^-1 in 1 M Na₂SO₄ (at 0.9 V vs RHE), and 6.8 mA W^-1 in 1 M KOH (at 1.1. V vs RHE) under 275 nm illumination wavelength with an intensity of 1.3 mW cm^-2. Beyond the photodetector application, 2D GaS-based PEC-type devices may find application in tandem solar PEC cells in combination with other visible-sensitive low-band-gap materials, including transition-metal monochalcogenides recently established for PEC solar energy conversion applications.

High-Performance Ultraviolet Photodetector Based on a Zinc Oxide Nanoparticle@Single-Walled Carbon Nanotube Heterojunction Hybrid Film

A hybrid film consisting of zinc oxide nanoparticles (ZnO NPs) and carbon nanotubes (CNTs) is formed on a glass substrate using a simple and swift spin coating process for the use in ultraviolet photodetectors (UV PDs). The incorporation of various types of CNTs into ZnO NPs (ZnO@CNT) enhances the performance of UV PDs with respect to sensitivity, photoresponse, and long-term operation stability when compared with pristine ZnO NP films. In particular, the introduction of single-walled CNTs (SWNTs) exhibits a superior performance when compared with the multiwalled CNTs (MWNTs) because SWNTs can not only facilitate the stability of free electrons generated by the O₂ desorption on ZnO under UV irradiation owing to the built-in potential between ZnO and SWNT heterojunctions, but also allow facile and efficient transport pathways for electrons through SWNTs with high aspect ratio and low defect density. Furthermore, among the various SWNTs (arc-discharged (A-SWNT), Hipco (H-SWNT), and CoMoCat (C-SWNT) SWNTs), we demonstrate the ZnO@A-SWNT hybrid film exhibits the best performance because of higher conductivity and aspect ratio in A-SWNTs when compared with those of other types of SWNTs. At the optimized conditions for the ZnO@A-SWNT film (ratio of A-SWNTs and ZnO NPs and electrode distance), ZnO@A-SWNT displays a sensitivity of 4.9 × 10³ % with an on/off current ratio of ~10⁴ at the bias of 2 V under the UV wavelength of 365 nm (0.47 mW/cm²). In addition, the stability in long-term operation and photoresponse time are significantly improved by the introduction of A-SWNTs into the ZnO NP film when compared with the bare ZnO NPs film.

Fast-Response Single-Nanowire Photodetector Based on ZnO/WS2 Core/Shell Heterostructures

The surface plays an exceptionally important role in nanoscale materials, exerting a strong influence on their properties. Consequently, even a very thin coating can greatly improve the optoelectronic properties of nanostructures by modifying the light absorption and spatial distribution of charge carriers. To use these advantages, 1D/1D heterostructures of ZnO/WS₂ core/shell nanowires with a-few-layers-thick WS₂ shell were fabricated. These heterostructures were thoroughly characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. Then, a single-nanowire photoresistive device was assembled by mechanically positioning ZnO/WS₂ core/shell nanowires onto gold electrodes inside a scanning electron microscope. The results show that a few layers of WS₂ significantly enhance the photosensitivity in the short wavelength range and drastically (almost 2 orders of magnitude) improve the photoresponse time of pure ZnO nanowires. The fast response time of ZnO/WS₂ core/shell nanowire was explained by electrons and holes sinking from ZnO nanowire into WS₂ shell, which serves as a charge carrier channel in the ZnO/WS₂ heterostructure. First-principles calculations suggest that the interface layer i-WS₂, bridging ZnO nanowire surface and WS₂ shell, might play a role of energy barrier, preventing the backward diffusion of charge carriers into ZnO nanowire.

Natural Biowaste-Cocoon-Derived Granular Activated Carbon-Coated ZnO Nanorods: A Simple Route To Synthesizing a Core-Shell Structure and Its Highly Enhanced UV and Hydrogen Sensing Properties

Granular activated carbon (GAC) materials were prepared via simple gas activation of silkworm cocoons and were coated on ZnO nanorods (ZNRs) by the facile hydrothermal method. The present combination of GAC and ZNRs shows a core-shell structure (where the GAC is coated on the surface of ZNRs) and is exposed by systematic material analysis. The as-prepared samples were then fabricated as dual-functional sensors and, most fascinatingly, the as-fabricated core-shell structure exhibits better UV and H₂ sensing properties than those of as-fabricated ZNRs and GAC. Thus, the present core-shell structure-based H₂ sensor exhibits fast responses of 11% (10 ppm) and 23.2% (200 ppm) with ultrafast response and recovery. However, the UV sensor offers an ultrahigh photoresponsivity of 57.9 A W^-1, which is superior to that of as-grown ZNRs (0.6 A W^-1). Besides this, switching photoresponse of GAC/ZNR core-shell structures exhibits a higher switching ratio (between dark and photocurrent) of 1585, with ultrafast response and recovery, than that of as-grown ZNRs (40). Because of the fast adsorption ability of GAC, it was observed that the finest distribution of GAC on ZNRs results in rapid electron transportation between the conduction bands of GAC and ZNRs while sensing H₂ and UV. Furthermore, the present core-shell structure-based UV and H₂ sensors also well-retained excellent sensitivity, repeatability, and long-term stability. Thus, the salient feature of this combination is that it provides a dual-functional sensor with biowaste cocoon and ZnO, which is ecological and inexpensive.

Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures

Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) and wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity and visible-blind photodetection still remains a challenge. Here, we utilized a semitransparent film of p-type semiconducting single-walled carbon nanotubes (SC-SWNTs) with an energy gap of 0.68 ± 0.07 eV in combination with a molecular beam epitaxy grown n-ZnO layer to build a vertical p-SC-SWNT/n-ZnO heterojunction-based UV photodetector. The resulting device shows a current rectification ratio of 10³, a current photoresponsivity up to 400 A/W in the UV spectral range from 370 to 230 nm, and a low dark current. The detector is practically visible-blind with the UV-to-visible photoresponsivity ratio of 10⁵ due to extremely short photocarrier lifetimes in the one-dimensional SWNTs because of strong electron-phonon interactions leading to exciton formation. In this vertical configuration, UV radiation penetrates the top semitransparent SC-SWNT layer with low losses (10-20%) and excites photocarriers within the n-ZnO layer in close proximity to the p-SC-SWNT/n-ZnO interface, where electron-hole pairs are efficiently separated by a high built-in electric field associated with the heterojunction.

Photopatterned Single-Walled Carbon Nanotube Films Utilizing the Adsorption/Desorption Processes of Photofunctional Dispersants

We describe the application of photodetachable and recyclable dispersants for single-walled carbon nanotubes (SWNTs) in the fabrication of photopatterned SWNT thin films. Because adsorption and desorption of the dispersants on the SWNT surfaces affect not only their dispersibility in water but also their solubility, SWNT photopatterns were obtained on glass substrates in only three steps, i.e., casting the SWNT/dispersant solution, UV-light exposure of the casted SWNT/dispersant films through a photomask, and subsequent rinsing with neutral water. This patterning procedure is simple and scalable and will enable us to prepare microfabricated SWNT thin films.

High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W-1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

Inkjet-printed transparent nanowire thin film features for UV photodetectors

Stable nanowire suspensions are inkjet-printed to form the all-printed transparent UV photodetectors with fast responses.

Nanocrystallized CdS beneath the surface of a photoconductor for detection of UV light with picowatt sensitivity

In this study, we demonstrated that the improvement of detection capability of cadmium sulfide (CdS) photoconductors in the ultraviolet (UV) regime is much larger than that in the visible regime, suggesting that the deep UV laser-treated CdS devices are very suitable for low-light detection in the UV regime. We determined that a nanocrystallized CdS photoconductor can behave as a picowatt-sensitive detector in the UV regime after ultra-shallow-region crystallization of the CdS film upon a single shot from a KrF laser. Photoluminescence and Raman spectra revealed that laser treatment increased the degree of crystallization of the CdS and led to the effective removal of defects in the region of a few tens nanometers beneath the surface of CdS, confirming the result by the transmission electron microscopy (TEM) images. Optical simulations suggested that UV light was almost completely absorbed in the shallow region beneath the surface of the CdS films, consistent with the observed region that underwent major crystal structure transformation. Accordingly, we noted a dramatic enhancement in responsivity of the CdS devices in the UV regime. Under a low bias voltage (1 mV), the treated CdS device provided a high responsivity of 74.7 A W(-1) and a detectivity of 1.0×10(14) Jones under illumination with a power density of 1.9 nW cm(-2). Even when the power of the UV irradiation on the device was only 3.5 pW, the device exhibited extremely high responsivity (7.3×10(5) A W(-1)) and detectivity (3.5×10(16) Jones) under a bias voltage of 1 V. Therefore, the strategy proposed in this study appears to have great potential for application in the development of CdS photoconductors for picowatt-level detection of UV light with low power consumption.

Transparent and flexible supercapacitors with single walled carbon nanotube thin film electrodes

We describe a simple process for the fabrication of transparent and flexible, solid-state supercapacitors. Symmetric electrodes made up of binder-free single walled carbon nanotube (SWCNT) thin films were deposited onto polydimethylsiloxane substrates by vacuum filtration followed by a stamping method, and solid-state supercapacitor devices were assembled using a gel electrolyte. An optical transmittance of 82% was found for 0.02 mg of SWCNTs, and a specific capacitance of 22.2 F/g was obtained. The power density can reach to 41.5 kW · kg(-1) and shows good capacity retention (94%) upon cycling over 500 times. Fabricated supercapacitors will be relevant for the realization of transparent and flexible devices with energy storage capabilities, displays and touch screens in particular.

Planar-defect-rich zinc oxide nanoparticles assembled on carbon nanotube films as ultraviolet emitters and photocatalysts

Structural defects in zinc oxide (ZnO) nanoparticles are complex and hard to be controlled during the synthesis, however, diversifying the chemical and physical performances. Here we report a rapid and low-temperature deposition method to fabricate planar-defect-rich ZnO nanoparticles on freestanding and aligned carbon nanotube films, different from common treatments which remove structural defects as many as possible. The defect energy states are very close to the valence band of ZnO and serve as recombination centers for a nearly monochromatic ultraviolet luminescence within a wavelength range of 373–376 nm. The absence of point defects, especially of oxygen vacancies whose energy level is <1 eV below the conduction band, allows photoinduced electrons and holes to take parts in possible photocatalytic reactions rather than to recombine at the shallow energy levels of planar defects.

Significantly enhanced photoresponse in carbon nanotube film/TiO2 nanotube array heterojunctions by pre-electroforming

Traditional TiO2 based photodetectors (PDs) suffer from high dark resistance, which increases loss of photoexcited charge carriers. Here, we report a new and simple way to improve the performance of PDs based on double-walled carbon nanotube (DWCNT)/TiO2 nanotube heterojunctions. Highly ordered TiO2 nanotube arrays were fabricated using a two-step anodic oxidation method, and coated with a DWCNT film, which functioned as a semitransparent electrode and a photoactive layer. Via pre-electroforming, the device was switched from a high resistance state (HRS) to a low resistance state (LRS). At an applied bias of 1 V, the dark resistance was reduced from 926 to 0.67 kΩ, as a result of the formation of oxygen vacancy related conducting filaments. The photoresponse (ΔI = Ip - Id, where Ip and Id represents photocurrent and dark current, respectively) of the PD in LRS reached 816.76 μA W(-1) under 532 nm laser illumination and 802.89 μA W(-1) under 1064 nm laser irradiation, which is 965 and 3980 times higher, respectively, than those obtained from the HRS device under the same conditions. This strategy for enhancing the photoresponse of TiO2 based PDs may have applications in further improving the power conversion efficiency of dye-sensitized solar cells.

Self-powered UV photosensor based on PEDOT:PSS/ZnO micro/nanowire with strain-modulated photoresponse

Developing tailored micro/nanostructure interfaces is an effective way to make novel optoelectronic devices or enhance their performances. Here we report the fabrication of a PEDOT:PSS/ZnO micro/nanowire-based self-powered UV photosensor. The generation of photocurrent at zero bias is attributed to the separation of photogenerated electron-hole pairs within the built-in electric field at the PEDOT:PSS/ZnO interface upon UV light illumination. Furthermore, the piezotronic effect on the UV photoresponsivity under different strains is investigated, which is due to the modification of energy band diagram at the p-n heterojunction by strain-induced piezoelectric polarization. This study demonstrates a prospective approach to engineering the performance of a photodetector through straining and may offer theoretical supporting in future optoelectronic device fabrication and modification.