Transformation of the electrical characteristics of graphene field-effect transistors with fluoropolymer

Passivation of miniature microwave coplanar waveguides using a thin film fluoropolymer electret

The insertion losses of miniature gold/silicon-on-insulator (SOI) coplanar waveguides (CPW) are rendered low, stable, and light insensitive when covered with a thin film (95 nm) fluoropolymer deposited by a trifluoromethane (CHF₃) plasma. Microwave characterization (0–50 GHz) of the CPWs indicates that the fluoropolymer stabilizes a hydrogen-passivated silicon surface between the CPW tracks. The hydrophobic nature of the fluoropolymer acts as a humidity barrier, meaning that the underlying intertrack silicon surfaces do not re-oxidize over time—something that is known to increase losses. In addition, the fluoropolymer thin film also renders the CPW insertion losses insensitive to illumination with white light (2400 lx)—something potentially advantageous when using optical microscopy observations during microwave measurements. Capacitance–voltage (CV) measurements of gold/fluoropolymer/silicon metal–insulator-semiconductor (MIS) capacitors indicate that the fluoropolymer is an electret—storing positive charge. The experimental results suggest that the stored positive charge in the fluoropolymer electret and charge trapping influence surface-associated losses in CPW—MIS device modelling supports this. Finally, and on a practical note, the thin fluoropolymer film is easily pierced by commercial microwave probes and does not adhere to them—facilitating the repeatable and reproducible characterization of microwave electronic circuitry passivated by thin fluoropolymer.

Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO₂ surface toward the well-ordered and rigid alkane self-assembled layers.

Chemical functionalization and characterization of graphene-based materials

This review offers an overview on the chemical functionalization, characterization and applications of graphene-based materials.

Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors

Black phosphorus has been recently suggested as a very promising material for use in 2D field-effect transistors. However, due to its poor stability under ambient conditions, this material has not yet received as much attention as for instance MoS₂. We show that the recently demonstrated Al₂O₃ encapsulation leads to highly stable devices. In particular, we report our long-term study on highly stable black phosphorus field-effect transistors, which show stable device characteristics for at least eight months. This high stability allows us to perform a detailed analysis of their reliability with respect to hysteresis as well as the arguably most important reliability issue in silicon technologies, the bias-temperature instability. We find that the hysteresis in these transistors depends strongly on the sweep rate and temperature. Moreover, the hysteresis dynamics in our devices are reproducible over a long time, which underlines their high reliability. Also, by using detailed physical models for oxide traps developed for Si technologies, we are able to capture the channel electrostatics of the black phosphorus FETs and determine the position of the defect energy band. Finally, we demonstrate that both hysteresis and bias-temperature instabilities are due to thermally activated charge trapping/detrapping by oxide traps and can be reduced if the device is covered by Teflon-AF.

Waterproof Electronic-Bandage with Tunable Sensitivity for Wearable Strain Sensors

We demonstrate high-performance wearable electronic-bandage (E-bandage) based on carbon nanotube (CNT)/silver nanoparticle (AgNP) composites covered with flexible media of fluoropolymer-coated polydimethylsiloxane (PDMS) films. The E-bandage can be used for motion-related sensors by directly attaching them to human skin, which achieves a fast and accurate electric response with high sensitivity according to the bending and stretching movements that induce changes in the conductivity. This advance in the E-bandage is realized as a result of the sensitivity that can be achieved by controlling the concentration of AgNPs in CNT pastes and by modifying the device architecture. The fluoropolymer encapsulation with hydrophobic surface characteristics allows for the E-bandage to operate in water and protects it from physical and chemical contact with the daily life conditions of the human skin. The reliability and scalability of the E-bandage as well as the compatibility with conventional microfabrication allow new possibilities to integrate flexible human-interactive nanoelectronics into mobile health-care monitoring systems combined with Internet of things (IoTs).

A positive synergetic effect observed in the P3HT–SnO2 composite semiconductor: the striking increase of carrier mobility

A P3HT–SnO₂ PNS composite semiconductor with extra-high mobility was prepared via the positive synergetic effect between organic and inorganic moieties.

Dramatic vapor-phase modulation of the characteristics of graphene field-effect transistors

Here we report on dramatic and favorable changes to the operating characteristics in monolayer graphene field-effect transistors (FETs) exposed to vapor-phase, polar organic molecules in ambient. These changes include significant reduction of the Dirac voltage, accompanied by both an increase in electron and hole mobility, μ, and a decrease in residual carrier density, N0, to < 3 × 10(11) cm(-2). In contrast to graphene FET modulation with various liquid- and solid-phase dielectric media present in the literature, we attribute these changes to screening by polar vapor-phase molecules of fields induced by charged impurities and defects, n(imp), in or near the active layer. The magnitude of the changes produced in the graphene FET parameters scales remarkably well with the dipole moment of the delivered molecules. These effects are reversible, a unique advantage of working in the vapor phase. The changes observed upon polar molecule delivery are analogous to those produced by depositing and annealing fluoropolymer coatings on graphene that have been reported previously, and we attribute these changes to similar charge screening or neutralization phenomena.

Toward air-stable multilayer phosphorene thin-films and transistors

Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness-tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal for optoelectronics and flexible devices. However, its instability in air is of paramount concern for practical applications. Here, we demonstrate air-stable BP devices with dielectric and hydrophobic encapsulation. Microscopy, spectroscopy, and transport techniques were employed to elucidate the aging mechanism, which can initiate from the BP surface for bare samples, or edges for samples with thin dielectric coating, highlighting the ineffectiveness of conventional scaled dielectrics. Our months-long studies indicate that a double layer capping of Al2O3 and hydrophobic fluoropolymer affords BP devices and transistors with indefinite air-stability for the first time, overcoming a critical material challenge for applied research and development.

Graphene oxide-zinc oxide nanocomposite as channel layer for field effect transistors: effect of ZnO loading on field effect transport

The effects of ZnO on graphene oxide (GO)-ZnO nanocomposites are investigated to tune the conductivity in GO under field effect regime. Zinc oxides with different concentrations from 5 wt % to 25 wt % are used in a GO matrix to increase the conductivity in the composite. Six sets of field effect transistors with pristine GO and GO-ZnO as the channel layer at varying ZnO concentrations were fabricated. From the transfer characteristics, it is observed that GO exhibited an insulating behavior and the transistors with low ZnO (5 wt %) concentration initially showed p-type conductivity that changes to n-type with increases in ZnO loading. This n-type dominance in conductivity is a consequence of the transfer of electrons from ZnO to the GO matrix. From X-ray photoelectron spectroscopic measurements, it is observed that the progressive reduction in the C-OH oxygen group took place with increases in ZnO loading. Thus, from insulating GO to p- and then n-type, conductivity in GO could be achieved with reduction in the C-OH oxygen group by photocatalytic reduction of GO with varying degrees of ZnO. The restoration of sp(2) electron network in the GO matrix with the anchoring of ZnO nanostructures was observed from Raman spectra. From UV-visible spectra, the band gap in pristine GO was found to be 3.98 eV and reduced to 2.8 eV with increase in ZnO attachment.

Improved transfer quality of CVD-grown graphene by ultrasonic processing of target substrates: applications for ultra-fast laser photonics

In this paper, we experimentally found that the transfer quality of CVD-grown graphene could be improved by ultrasonic processing (UP) of target substrates thanks to the improved hydrophilicity. Atomic force micrograph and Raman spectroscopy revealed that the graphene films transferred onto the target substrate with UP possess less wrinkles and defects than that of the sample without UP. The improvement technique endows graphene more suitable for photonics applications because of its weaker optical loss, higher optical damage threshold and longer stability. By integrating a fiber pigtailed graphene (treated by UP) device into a fiber laser cavity, we could obtain narrower mode-locked pulse with higher optical-to-optical conversion efficiency and better optical spectral profile, in contrast with that without UP, which further verify the improved transfer quality of graphene by the UP technique. We anticipate that this transfer technique may be applicable to boost the performance of other graphene photonics devices, such as optical modulator, detector, polarizer, etc.

25 GHz embedded-gate graphene transistors with high-k dielectrics on extremely flexible plastic sheets

Despite the widespread interest in graphene electronics over the past decade, high-performance graphene field-effect transistors (GFETs) on flexible substrates have been rarely achieved, even though this atomic sheet is widely understood to have greater prospects for flexible electronic systems. In this article, we report detailed studies on the electrical and mechanical properties of vapor synthesized high-quality monolayer graphene integrated onto flexible polyimide substrates. Flexible graphene transistors with high-k dielectric afforded intrinsic gain, maximum carrier mobilities of 3900 cm(2)/V·s, and importantly, 25 GHz cutoff frequency, which is more than a factor of 2.5 times higher than prior results. Mechanical studies reveal robust transistor performance under repeated bending, down to 0.7 mm bending radius, whose tensile strain is a factor of 2-5 times higher than in prior studies. In addition, integration of functional coatings such as highly hydrophobic fluoropolymers combined with the self-passivation properties of the polyimide substrate provides water-resistant protection without compromising flexibility, which is an important advancement for the realization of future robust flexible systems based on graphene.