Enhanced field emission properties from CNT arrays synthesized on Inconel superalloy

Growth and Performance of High-Quality SWCNT Forests on Inconel Foils as Lithium-Ion Battery Anodes

Large-scale production of vertically aligned single-walled carbon nanotubes (VA-SWCNTs) on metal foils promises to enable technological advancements in many fields, from functional composites to energy storage to thermal interfaces. In this work, we demonstrate growth of high-quality (G/D > 6, average diameters ∼ 2-3 nm, densities > 10¹² cm^-2) VA-SWCNTs on Inconel metal for use as a lithium-ion battery (LIB) anode. Scale-up of SWCNT growth on Inconel 625 to 100 cm² exhibits nearly invariant CNT structural properties, even when synthesis is performed near atmospheric pressure, and this robustness is attributed to a growth kinetic regime dominated by the carbon precursor diffusion in the bulk gas mixture. SWCNT forests produced on large-area metal substrates at close to atmospheric pressure possess a combination of structural features that are among the best demonstrated so far in the literature for growth on metal foils. Leveraging these achievements for energy applications, we demonstrate a VA-SWCNT LIB anode with capacity >1200 mAh/g at 1.0C and stable cycling beyond 300 cycles. This robust synthesis of high-quality VA-SWCNTs on metal foils presents a promising route toward mass production of high-performance CNT devices for a broad range of applications.

Field Emission of Multi-Walled Carbon Nanotubes from Pt-Assisted Chemical Vapor Deposition

Multi-walled carbon nanotubes (MWNTs) were grown directly on a metal substrate with the assistance of Pt using a chemical vapor deposition method. In addition, the growth mechanism of Pt-assisted catalytic CNT was discussed. MWNTs were characterized by SEM, TEM, AFM, Raman, and EDS, and the field emission (FE) properties were investigated, comparing with the direct grown MWNTs. The results showed that CNTs could not been synthesized by Pt particles alone under the experimental condition, but Pt may accelerate the decomposition of the carbon source gas, i.e., assisting MWNT growth with other catalysts. The Pt-assisted MWNTs were longer with larger diameters of around 80 nm and possessed better structural qualities with very few catalyst particles inside. Improved field emission properties were demonstrated for the Pt-assisted MWNTs with lower turn-on fields (for 0.01 mA·cm-2 current density) of 2.0 V·μm-1 and threshold field (for 10 mA·cm-2 current density) of 3.5 V·μm-1, as well as better stability under a long-term test of 80 h (started at 3.0 mA for the Pt-assisted emitter and 3.25 mA for the direct grown emitter). This work demonstrated a promising approach to develop high performance CNT field emitters for device applications.

The effect of size distribution and degradation of carbon nanotubes on the Fowler-Nordheim plot behavior

The behavior of the Folwer-Nordheim (FN) plot is investigated for large-area emitters arrays composed of perfectly aligned single-walled carbon nanotubes (CNTs). The field emission currents are calculated based on the standard FN model using the Murphy-Good equation. The aspect ratio of the CNTs is varied such that the height of the CNT has predefined uniform or Gaussian distributions. Continuous degradation of the high-aspect-ratio CNTs is assumed to take place at predefined values of the scaled barrier field. The effects, on the FN plot behavior, of the size distribution and the scenario of the degradation of the emitter are determined and discussed. These factors are found to produce the two behaviors of the experimental FN plots, i.e. the upward and the downward bending behaviors. This work shows the possibility to expand the application of the standard FN model for the investigation of the field emission characteristics from nanoscaled emitters such as CNTs.

Enhanced interfacial reaction of silicon carbide fillers onto the metal substrate in carbon nanotube paste for reliable field electron emitters

Adhesion of carbon nanotube (CNT) onto a cathode substrate is very crucial for field electron emitters that are operating under high electric fields. As a supporting precursor of CNT field emitters, we adopted silicon carbide (SiC) nano-particle fillers with Ni particles and then enhanced interfacial reactions onto Kovar-alloy substrates through the optimized wet pulverization process of SiC aggregates for reliable field electron emitters. As-purchased SiC aggregates were efficiently pulverized from 20 to less than 1 micro-meter in a median value (D50). CNT pastes for field emitters were distinctively formulated by a mixing process of the pulverized SiC aggregates and pre-dispersed CNTs. X-ray photoelectron spectroscopy studies showed that the optimally pulverized SiC-CNT paste-emitter had a stronger Si 2p^3/2 signal in the Ni₂Si phase than the as-purchased one. The Si 2p^3/2 signal would represent interfacial reaction of the SiC nano-particle onto Ni from the CNT paste and the Kovar substrate, forming the supporting layer for CNT emitters. The optimal paste-emitter even in a vacuum-sealed tube exhibited a highly reliable field emission current with a high current density of 100 mA cm^-2 for over 50 h along with good reproducibility. The enhanced interfacial reaction of SiC filler onto the metal substrates could lead to highly reliable field electron emitters for vacuum electronic devices.

Hexaarylbenzene based high-performance p-channel molecules for electronic applications

Hexaarylbenzene-based molecules find potential applications in organic electronics due to wider energy gap, high HOMO level, higher photoconductivity, electron-rich nature, and high hole-transporting property. Due to the unique propeller structure, these molecules show low susceptibility towards self-aggregation. This property can be tailored by proper molecular engineering by the incorporation of appropriate groups. Therefore, hexaarylbenzene chromophores are widely used as the materials for high-efficiency light-emitting materials, charge transport materials, host materials, redox materials, photochemical switches, and molecular receptors. This review highlights the diverse structural modification techniques used for the synthesis of symmetrical and unsymmetrical structures. Also, the potential applications of these molecules in organic light-emitting diodes, organic field-effect transistors, organic photovoltaics, organic memory devices, and logic circuits are discussed.

The behavior of Fowler-Nordheim plot from carbon nanotubes-based large area field emitters arrays

The Fowler - Nordheim (FN) plot behavior is investigated for field emitted electrons from virtual carbon nanotubes (CNTs)-based large area field emitters (LAFEs) arrays. The field emission currents are calculated using the Murphy-Good field emission equation assuming emission from two sets of geometrically-different CNTs. No screening effects are considered in the calculations. The FN plots nonlinear behavior, in the form of an upward bend, is observed, analyzed and attributed to the emitters' geometrical features and their numbers in the arrays. The calculations emphasize that the nonlinear characteristic depends, not only on the two-class geometries of the emitters but also on the statistical distribution of these emitters in the arrays. The calculations adopted in the present work allow fitting the experimental data of the LAFEs for any desirable range of applied voltages with minimal adjustable parameters. The present investigation is believed to help further development of the LAFEs for future applications.

Synthesis, structure and optimized field emission properties of highly oriented ZnO/Pt core–shell nanorods on a Zn substrate

The current density of as-fabricated Pt15/ZnO NR emitters was about 1900 times that of the bare ZnO emitters.

High-Performance Field Emission from a Carbonized Cork

To broaden the range of application of electron beams, low-power field emitters are needed that are miniature and light. Here, we introduce carbonized cork as a material for field emitters. The light natural cork becomes a graphitic honeycomb upon carbonization, with the honeycomb cell walls 100-200 nm thick and the aspect ratio larger than 100, providing an ideal structure for the field electron emission. Compared to nanocarbon field emitters, the cork emitter produces a high current density and long-term stability with a low turn-on field. The nature of the cork material makes it quite simple to fabricate the emitter. Furthermore, any desired shape of the emitter tailored for the final application can easily be prepared for point, line, or planar emission.

On-chip integrated vertically aligned carbon nanotube based super- and pseudocapacitors

On-chip energy storage and management will have transformative impacts in developing advanced electronic platforms with built-in energy needs for operation of integrated circuits driving a microprocessor. Though success in growing stand-alone energy storage elements such as electrochemical capacitors (super and pseusocapacitors) on a variety of substrates is a promising step towards this direction. In this work, on-chip energy storage is demonstrated using architectures of highly aligned vertical carbon nanotubes (CNTs) acting as supercapacitors, capable of providing large device capacitances. The efficiency of these structures is further increased by incorporating electrochemically active nanoparticles such as MnO_x to form pseudocapacitive architectures thus enhancing device capacitance areal specific capacitance of 37 mF/cm². The demonstrated on-chip integration is up and down-scalable, compatible with standard CMOS processes, and offers lightweight energy storage what is vital for portable and autonomous device operation with numerous advantages as compared to electronics built from discrete components.

Nanoscale investigation of enhanced electron field emission for silver ion implanted/post-annealed ultrananocrystalline diamond films

Silver (Ag) ions are implanted in ultrananocrystalline diamond (UNCD) films to enhance the electron field emission (EFE) properties, resulting in low turn-on field of 8.5 V/μm with high EFE current density of 6.2 mA/cm² (at an applied field of 20.5 V/μm). Detailed nanoscale investigation by atomic force microscopy based peak force-controlled tunneling atomic force microscopy (PF-TUNA) and ultra-high vacuum scanning tunneling microscopy (STM) based current imaging tunneling spectroscopy (CITS) reveal that the UNCD grain boundaries are the preferred electron emission sites. The two scanning probe microscopic results supplement each other well. However, the PF-TUNA measurement is found to be better for explaining the local electron emission behavior than the STM-based CITS technique. The formation of Ag nanoparticles induced abundant sp² nanographitic phases along the grain boundaries facilitate the easy transport of electrons and is believed to be a prime factor in enhancing the conductivity/EFE properties of UNCD films. The nanoscale understanding on the origin of electron emission sites in Ag-ion implanted/annealed UNCD films using the scanning probe microscopic techniques will certainly help in developing high-brightness electron sources for flat-panel displays applications.

Negative-charge-functionalized carbon nanodot: a low-cost smart cold emitter

Cold emission properties of carbon nanodots (CNDs) evaluated using ANSYS Maxwell software are predicted to be size-dependent and then verified experimentally. In order to correlate the electron emission properties with the size of CNDs, the work function values were determined using ultraviolet photoelectron spectroscopy. This is the first report on theoretical calculations based on density functional theory and experimental results that confirm the work function dependency on the charge state of the functional group attached on the particle surface. The smallest CND (2.5 nm) has the highest percentage of negatively charged groups as well as the lowest work function (5.18 eV). The smallest dimension with the lowest work function assures that this sample is the best suited for field emission. It shows excellent field emission properties with a high current density of ∼1.45 mA cm^-2 at 2 V μm^-1 electric field, turn-on field as low as 0.04 V μm^-1, very high field enhancement factor of 2.7 × 10⁵ and high stability. Overall, the zero-dimensional CNDs showed superior field emission activity as compared to the higher dimensional carbon nanomaterials.

High-Performance Field-Emission Properties of Boron Nitride Nanotube Field Emitters

Boron nitride nanotubes (BNNTs) have attracted considerable attention as a field emission material because of their high mechanical strength, high negative electron affinity, and high oxidation resistance. Nevertheless, the obtained field-emission properties of BNNTs have indicated poor emission performance, which is a very high turn-on electric field with a low emission current. We fabricated BNNT field emitters and investigated their field-emission properties. The field-emission properties of the BNNT field emitters were considerably enhanced compared to those of other BN nanomaterial-based field emitters. The turn-on and the threshold electric fields of the BNNT field emitter were 3.1 and 5.4 V/μm at the gap distance of 750 μm, respectively. Both the turn-on and the threshold electric fields of the BNNT field emitters were decreased by increasing the gap distance between the emitter tip and the anode electrode. Degradation of the emission current during field emission operation for 20 h showed no significant difference according to the gap distance. Emission current fluctuation of the BNNT field emitters showed that the smaller gap was more unstable than the larger gap. The enhanced emission properties are mainly attributed to the small diameter, high-quality, and straight structure of BNNTs as well as the stable network formation of the BNNT film with good mechanical and electrical contact between the BNNTs and the cathode electrode. The remarkable emission performance of the BNNT field emitters might have promising applications for various field-emission devices.

Controllable Ag nanoparticle coated ZnO nanorod arrays on an alloy substrate with enhanced field emission performance

Ag–ZnO nanocomposites are conveniently prepared on alloy substrates, leading to much improved field emission performances.

Wide-range Vacuum Measurements from MWNT Field Emitters Grown Directly on Stainless Steel Substrates

The field emission properties and the vacuum measurement application are investigated from the multi-walled carbon nanotubes (MWNTs) grown directly on catalytic stainless steel substrates. The MWNT emitters present excellent emission properties after the acid treatment of the substrate. The MWNT gauge is able to work down to the extreme-high vacuum (XHV) range with linear measurement performance in wide range from 10(-11) to 10(-6) Torr. A modulating grid is attempted with improved gauge sensitivity. The extension of the lower pressure limit is attributed largely to low outgassing effect due to direct growth of MWNTs and justified design of the electron source.

Silsesquioxane-cored star amphiphilic polymer as an efficient dispersant for multi-walled carbon nanotubes

One octopus-shaped amphiphilic polymer was used to functionalize MWNTs for the first time.

Facile synthesis of nanostructured carbon materials over RANEY® nickel catalyst films printed on Al2O3 and SiO2 substrates

Films of porous RANEY® Ni catalyst particles deposited on substrates by stencil printing offer a facile platform for synthesizing nanostructured carbon/nickel composites for direct use as electrodes in electrochemical and field emitter devices.

Spectral weight shift in the valence band density of states and concurrent increase in field emission by hydrogenation of FeCo–SiO2 nanocomposites

Roughened surface and enhanced valence electronic states of hydrogen plasma treated FeCo–SiO₂ nanogranular films has made it an efficient field emitter in comparison to its as-grown and furnace annealed counterparts.

Field emission with ultralow turn on voltage from metal decorated carbon nanotubes

A simple and scalable method of decorating 3D-carbon nanotube (CNT) forest with metal particles has been developed. The results observed in aluminum (Al) decorated CNTs and copper (Cu) decorated CNTs on silicon (Si) and Inconel are compared with undecorated samples. A significant improvement in the field emission characteristics of the cold cathode was observed with ultralow turn on voltage (Eto ∼ 0.1 V/μm) due to decoration of CNTs with metal nanoparticles. Contact resistance between the CNTs and the substrate has also been reduced to a large extent, allowing us to get stable emission for longer duration without any current degradation, thereby providing a possibility of their use in vacuum microelectronic devices.