Digital memory versatility of fully π-conjugated donor-acceptor hybrid polymers

Photochromic Dithienylethene Monolayer-Modified Gold Nanoparticles as a Tunable Floating Gate in the Fabrication of Nonvolatile Organic Memory

Nonvolatile memory (NVM) devices were fabricated by implanting a self-assembled monolayer (SAM) of functional dithienylethene (DTE) derivative on the gold nanoparticle (Au-NP) surface in a pentacene-based organic transistor. The Au-NPs and DTE served as a charge-trapping medium and tunneling barrier layer, respectively. The transfer characteristic of the NVM device showed a narrow hysteresis window and wide memory window, indicating that the DTE-SAM served as a variable barrier layer to regulate the trapping and detrapping of external free charges at the Au-NPs. The energy gap introduced by the DTE-SAM is modulated through photoisomerization between a ring-open form and a ring-closed form by absorbing UV or visible light. For a memory device, the ring-closed DTE allows more free charge injection into the trapping sites, and the ring-open one better retains the trapped charges. A longer anchoring alkanethiol chain at the DTE moiety can further extend the device's retention time. For the NVM operation, programming with the ring-closed DTE and then switching the DTE structure to the ring-open form for erasing can facilitate the charge trapping and charge retention with the same molecule compared to operating all in the ring-open form or all in the ring-closed form of DTE. The structural characterization and electronic characteristics of these devices are discussed in detail.

Non-volatile ternary memristors based on a polymer containing a carbazole donor with CuO NPs embedded

A D–A-type polymer PCz–BMBI was synthesized and non-volatile ternary memory devices of ITO/PCz–BMBI:CuO/Al were fabricated with an ON2/ON1/OFF ratio of 105.3 : 102.3 : 1.

Chemically Controlled Volatile and Nonvolatile Resistive Memory Characteristics of Novel Oxygen-Based Polymers

Recent advancements in modern microelectronics continuously increase the data storage capacity of modern devices, but they require delicate and costly fabrication processes. As alternatives to conventional inorganic based semiconductors, semiconducting polymers are of academic and industrial interest for their cost-efficiency, power efficiency, and flexible processability. Here, we have synthesized a series of novel oxygen-based polymers through the postmodification reactions of poly(ethylene-alt-maleate) with various oxybenzyl alcohol derivatives. The oxygen-based polymers are thermally stable up to 180 °C, and their nanoscale film devices exhibit reliable, power efficient p-type unipolar volatile and nonvolatile resistive memory characteristics with high ON/OFF current ratios. Additionally, when given a higher number of oxygen atoms in oxyphenyl side groups, the thin film polymer devices demonstrate a wide operational film thickness range. The memory characteristics depend on the oxyphenyl moieties functioning as charge trap sites, where a combination of Schottky emission and trap-limited space charge limited conductions in OFF-state and hopping conduction in ON-state are observed. This study demonstrates the chemical incorporation of oxyphenyl derivatives into polymer dielectrics as a powerful development tool for p-type resistive memory materials.

A TCBD-based AB2-type second-order nonlinear optical hyperbranched polymer prepared by a facile click-type postfunctionalization

A double click-type postfunctionalization strategy was successfully designed to prepare an AB₂-type hyperbranched polymer containing highly polarizable tetracyanobutadienyl (TCBD)-based nonlinear optical chromophores.

Nanoscale Film Morphology and n-Type Digital Memory Characteristics of π-Conjugated Donor-Acceptor Alternating Copolymer Based on Thiophene and Thiadiazole Units

Various molecular weight π-conjugated donor-acceptor polymers based on thiadiazole and thiophene units are investigated with respect to nanoscale film morphology and digital memory performance. Interestingly, all polymers reveal excellent n-type digital permanent memory characteristics, which are governed by the combination of Ohmic and trap-limited space charge limited conductions via a hopping process using thiadiazole and thiophene units as charge traps and stepping stones. The digital memory performance is significantly influenced by the film morphology details that vary with the polymer molecular weight as well as the film thickness. A higher population of face-on structure formation, as well as higher molecular weight, provides a wider film thickness window of digital memory operation. Overall, π-conjugated PBTDzTV polymers are suitable for the production of high-performance, programmable n-type permanent memory devices with very low power consumption.

Functional Covalent Layer-by-Layer Thin Films by [2 + 2] Cycloaddition-Retroelectrocyclization

Covalent layer-by-layer (LbL) thin films with the well-defined charge-transfer (CT) chromophores were fabricated by the highly efficient [2 + 2] cycloaddition-retroelectrocyclization (CA-RE) reaction between the dialkylaniline-substituted alkynes and 7,7,8,8-tetracyanoquinodimethane (TCNQ) moieties. The resulting thin films showed potent redox activities and Ag⁺ ion sensing ability due to the formed CT chromophores.

Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device

A novel thiadiazoloquinoxaline (TQ)-based donor-acceptor (D-A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQ and Py-2-TQ), which show flash-type binary memory behaviors, Py-1-TQ exhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (10^5.8:10^3.4:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D-A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D-A tuning.

Highly efficient polymerization via sulfur(vi)-fluoride exchange (SuFEx): novel polysulfates bearing a pyrazoline–naphthylamide conjugated moiety and their electrical memory performance

Two polysulfates (PolyTPP-NI and CPTPP-NI) were synthesized by a SuFEx click reaction, and their memory devices show Flash behaviors.

Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles

Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles.

Bistable electrical switching and nonvolatile memory effects by doping different amounts of GO in poly(9,9-dioctylfluorene-2,7-diyl)

The device shows different conductive behavior: electric bistable nonvolatile flash memory behavior and conductor behavior.

Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex

The ITO/active material/Au sandwiched devices of a cobalt(ii) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio (>10³) and low operating voltages (<±3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.

Development of Conjugated Polymers for Memory Device Applications

This review summarizes the most widely used mechanisms in memory devices based on conjugated polymers, such as charge transfer, space charge traps, and filament conduction. In addition, recent studies of conjugated polymers for memory device applications are also reviewed, discussed, and differentiated based on the mechanisms and structural design. Moreover, the electrical conditions of conjugated polymers can be further fine-tuned by careful design and synthesis based on the switching mechanisms. The review also emphasizes and demonstrates the structure-memory properties relationship of donor-acceptor conjugated polymers for advanced memory device applications.

Synthesis and optical and electrochemical memory properties of fluorene–triphenylamine alternating copolymer

A fluorene–triphenylamine copolymer (PF–TPA) was designed and synthesized under Suzuki coupling reaction conditions in this work. It exhibited a typical electrical conductance switching behavior and non-volatile flash memory effects.

Multilevel conductance switching of a memory device induced by enhanced intermolecular charge transfer

The modification of the terminal electron-donating groups induces a critical change in molecular aggregation and the intermolecular charge-transfer effect of the symmetric D-A1-A2-A1-D molecules that correlate with an addressable variation of memory performance from binary to ternary.

Substituent and Charge Transfer Effects on Memory Behavior of the Ambipolar Poly(triphenylamine)s

A series of poly(triphneylamine)s (CN-PTPA, 2CN-PTPA, 3CN-PTPA, and NO2-PTPA) with pendent acceptors (cyano, dicyanovinyl, tricyanovinyl, and nitro) have been readily synthesized by oxidative coupling polymerization using FeCl3 as oxidant. The tunable memory properties of the ITO/polymer/Al sandwiched memory devices including DRAM, SRAM, and WORM could be achieved by introducing substituent acceptors with different extent of electronic delocalization and electron-withdrawing intensity into the poly(triphenylamine)s. The highly fluorescent CN-PTPA exhibited volatile DRAM memory characteristic due to the large band gap and weak intramolecular charge transfer capability. 2CN-PTPA and 3CN-PTPA showed volatile SRAM memory property with retention time of 5 and 14 min, respectively, depending on electron-withdrawing capability of the acceptors. Furthermore, NO2-PTPA afforded nonvolatile WORM memory behavior attributed to the charge could be trapped into the nonconjugated nitro group even though the dipole moment and electron-withdrawing capability of nitro group were weaker than cyanovinyl groups. Moreover, except NO2-PTPA, all the devices derived from cyano-containing ambipolar polymers including CN-PTPA, 2CN-PTPA, and 3CN-PTPA could be switched to the ON state and exhibited WORM memory behavior in positive unipolar I-V switching. This phenomenon indicated that the Al atoms preferentially interact with poly(triphneylamine)s containing cyano than nitro substituents.

Boron ketoiminate-based conjugated polymers with tunable AIE behaviours and their applications for cell imaging

A series of AIE-active D–A type conjugated polymers incorporating boron ketoiminate units were synthesized and applied for cell imaging.

The steric effect of α- and β-substituted anthraquinone units on high performance polymeric memory devices

New anthraquinone-substituted triarylamine-based high-performance polymeric memory devices provide a strategy for tailoring the memory characteristics through structure modulation.