Direct observation and mechanism for enhanced electron emission in hydrogen plasma-treated diamond nanowire films

Hydrogenation of diamond nanowire surfaces for effective electrostatic charge storage

We report a novel versatile method for writing charged areas on diamond nanowire (DNW) surfaces using an atomic force microscopy (AFM) tip. Transmission electron microscopy (TEM) investigations revealed the existence of abundant plate-like diamond aggregates, which were encased in layers of graphite, forming nano-sized diamond-graphite composites (DGCs) on DNW surfaces. These DGCs are the main feature, acting as charge-trapping centers and storing electrostatic charge. A hydrogenation process has been observed effectively enhancing the charge-trapping properties of these DNW materials. The effective charge trapping properties with hydrogenation are ascribed to the disintegration of the DGCs into smaller pieces, with an overall increase in the metallic nanographitic phase fractions in a dielectric diamond matrix. Moreover, the written charge on the surface can be easily modified, re-written, or completely erased, enabling application in diamond-based re-writable electronic devices. However, excessive hydrogenation degrades the charge-trapping properties, which is attributed to the etching of the DGCs from the surface. This study demonstrates the potential importance of a simple hydrogenation process in effective electrostatic charge trapping and storage for diamond related nanocarbon materials and the role of DGCs to further enhance it.

Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

We report the enhanced charge storage characteristics of ultrananocrystalline diamond (UNCD) by contact electrification-induced hydrogenation. The non-catalytic hydrogenation of UNCD films was achieved by using platinum as an electron donor and sulfuric acid as a hydrogen proton donor, confirmed by Raman spectroscopy and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). Chemical treatment with only a H₂SO₄ solution is responsible for the surface oxidation. The oxidation of UNCD resulted in an increase in the quantity and duration of the tribocharges. After non-catalytic hydrogenation, the generation of friction-induced tribocharges was enhanced and remained for three hours and more. We show that the hydrogen incorporation on grain boundaries is responsible for the improvement of charge storage capability, because the doped hydrogen acts as a trap site for the tribocharges. This lab-scale and succinct method can be utilized to control charge trap capability in nanoscale memory electronics.

The enhanced charge storage characteristics of ultrananocrystalline diamond caused by contact electrification-induced hydrogenation was demonstrated by using atomic force microscopy.

Effect of Metal Ions on Hybrid Graphite-Diamond Nanowire Growth: Conductivity Measurements from a Single Nanowire Device

Novel Cd²⁺ ions mediated reproducible hybrid graphite-diamond nanowire (G-DNWs; Cd²⁺-NDS1 NW) growth from 4-Amino-5-phenyl-4H-1,2,4-triazole-3-thiol (S1) functionalized diamond nanoparticles (NDS1) via supramolecular assembly is reported and demonstrated through TEM and AFM images. FTIR, EDX and XPS studies reveal the supramolecular coordination between functional units of NDS1 and Cd²⁺ ions towards NWs growth. Investigations of XPS, XRD and Raman data show the covering of graphite sheath over DNWs. Moreover, HR-TEM studies on Cd²⁺-NDS1 NW confirm the coexistence of less perfect sp² graphite layer and sp³ diamond carbon along with impurity channels and flatten surface morphology. Possible mechanisms behind the G-DNWs growth are proposed and clarified. Subsequently, conductivity of the as-grown G-DNWs is determined through the fabrication of a single Cd²⁺-NDS1 NW device, in which the G-DNW portion L2 demonstrates a better conductivity of 2.31 × 10⁻⁴ mS/cm. In addition, we investigate the temperature-dependent carrier transport mechanisms and the corresponding activation energy in details. Finally, comparisons in electrical resistivities with other carbon-based materials are made to validate the importance of our conductivity measurements.

Microstructural Effect on the Enhancement of Field Electron Emission Properties of Nanocrystalline Diamond Films by Li-Ion Implantation and Annealing Processes

The impact of lithium-ion implantation and postannealing processes on improving the electrical conductivity and field electron emission (FEE) characteristics of nitrogen-doped nanocrystalline diamond (nNCD) films was observed to be distinctly different from those of undoped NCD (uNCD) films. A high-dose Li-ion implantation induced the formation of electron trap centers inside the diamond grains and amorphous carbon (a-C) phases in grain boundaries for both types of NCD films. Postannealing at 1000 °C healed the defects, eliminated the electron trap centers, and converted the a-C into nanographitic phases. The abundant nanographitic phases in the grain boundaries of the nNCD films as compared to the uNCD films made an interconnected path for effectual electron transport and consequently enhanced the FEE characteristics of nNCD films.

Nanoscale investigation of enhanced electron field emission for silver ion implanted/post-annealed ultrananocrystalline diamond films

Silver (Ag) ions are implanted in ultrananocrystalline diamond (UNCD) films to enhance the electron field emission (EFE) properties, resulting in low turn-on field of 8.5 V/μm with high EFE current density of 6.2 mA/cm² (at an applied field of 20.5 V/μm). Detailed nanoscale investigation by atomic force microscopy based peak force-controlled tunneling atomic force microscopy (PF-TUNA) and ultra-high vacuum scanning tunneling microscopy (STM) based current imaging tunneling spectroscopy (CITS) reveal that the UNCD grain boundaries are the preferred electron emission sites. The two scanning probe microscopic results supplement each other well. However, the PF-TUNA measurement is found to be better for explaining the local electron emission behavior than the STM-based CITS technique. The formation of Ag nanoparticles induced abundant sp² nanographitic phases along the grain boundaries facilitate the easy transport of electrons and is believed to be a prime factor in enhancing the conductivity/EFE properties of UNCD films. The nanoscale understanding on the origin of electron emission sites in Ag-ion implanted/annealed UNCD films using the scanning probe microscopic techniques will certainly help in developing high-brightness electron sources for flat-panel displays applications.

An Affordable Wet Chemical Route to Grow Conducting Hybrid Graphite-Diamond Nanowires: Demonstration by A Single Nanowire Device

We report an affordable wet chemical route for the reproducible hybrid graphite-diamond nanowires (G-DNWs) growth from cysteamine functionalized diamond nanoparticles (ND-Cys) via pH induced self-assembly, which has been visualized through SEM and TEM images. Interestingly, the mechanistic aspects behind that self-assembly directed G-DNWs formation was discussed in details. Notably, above self-assembly was validated by AFM and TEM data. Further interrogations by XRD and Raman data were revealed the possible graphite sheath wrapping over DNWs. Moreover, the HR-TEM studies also verified the coexistence of less perfect sp² graphite layer wrapped over the sp³ diamond carbon and the impurity channels as well. Very importantly, conductivity of hybrid G-DNWs was verified via fabrication of a single G-DNW. Wherein, the better conductivity of G-DNW portion L2 was found as 2.4 ± 1.92 × 10⁻⁶ mS/cm and revealed its effective applicability in near future. In addition to note, temperature dependent carrier transport mechanisms and activation energy calculations were reported in details in this work. Ultimately, to demonstrate the importance of our conductivity measurements, the possible mechanism behind the electrical transport and the comparative account on electrical resistivities of carbon based materials were provided.

Reduction of lasing threshold by protecting gas and the structure dependent visual lasing mode of various CdS microstructures

The lasing behaviours of semiconductor micro/nanostructures were studied in different gaseous surroundings, and the lasing threshold of the nanowire was reduced from 10.5 MW/cm² in air to 9.82 MW/cm², 8.25 MW/cm² and 7.22 MW/cm² in Ar, N₂ and He environment, respectively. It is attributed to the transient polarization of molecular gas. Moreover, the narrow-bandwidth lasing from the junction of a comb-like microstructure is hard to realize compared to that in nanowire and nanobelt due to the absence of good resonance cavities, and the only amplified spontaneous emission was observed by the ICCD dynamic images of the photoluminescence. The PL spectra and ICCD dynamic images, as well as lifetime measurement, prove the occurrence of lasing in nanowires and nanobelts with the pumping power increase, which should originate from the exciton-electron scattering and the formation of EHP, respectively. The whispering-gallery-mode lasing in nanowire and Fabry-Perot-Mode lasing in nanobelt were intuitively demonstrated by the ICCD images. The results provide one route to reduce the lasing threshold by the gas protection.

High Performance Field Emitters

The field electron emission performance of bulk, 1D, and 2D nanomaterials is here empirically compared in the largest metal-analysis of its type. No clear trends are noted between the turn-on electric field and maximum current density as a function of emitter work function, while a more pronounced correlation with the emitters dimensionality is noted. The turn-on field is found to be twice as large for bulk materials compared to 1D and 2D materials, empirically confirming the wider communities view that high aspect ratios, and highly perturbed surface morphologies allow for enhanced field electron emitters.

Metamaterials and imaging

Resolution of the conventional lens is limited to half the wavelength of the light source by diffraction. In the conventional optical system, evanescent waves, which carry sub-diffraction spatial information, has exponentially decaying amplitude and therefore cannot reach to the image plane. New optical materials called metamaterials have provided new ways to overcome diffraction limit in imaging by controlling the evanescent waves. Such extraordinary electromagnetic properties can be achieved and controlled through arranging nanoscale building blocks appropriately. Here, we review metamaterial-based lenses which offer the new types of imaging components and functions. Perfect lens, superlenses, hyperlenses, metalenses, flat lenses based on metasurfaces, and non-optical lenses including acoustic hyperlens are described. Not all of them offer sub-diffraction imaging, but they provide new imaging mechanisms by controlling and manipulating the path of light. The underlying physics, design principles, recent advances, major limitations and challenges for the practical applications are discussed in this review.

Highly Conductive Diamond-Graphite Nanohybrid Films with Enhanced Electron Field Emission and Microplasma Illumination Properties

Bias-enhanced nucleation and growth of diamond-graphite nanohybrid (DGH) films on silicon substrates by microwave plasma enhanced chemical vapor deposition using CH4/N2 gas mixture is reported herein. It is observed that by controlling the growth time, the microstructure of the DGH films and, thus, the electrical conductivity and the electron field emission (EFE) properties of the films can be manipulated. The films grown for 30 min (DGHB30) possess needle-like geometry, which comprised of a diamond core encased in a sheath of sp(2)-bonded graphitic phase. These films achieved high conductivity of σ = 900 S/cm and superior EFE properties, namely, low turn-on field of 2.9 V/μm and high EFE current density of 3.8 mA/cm(2) at an applied field of 6.0 V/μm. On increasing the growth time to 60 min (the DGHB60), the acicular grain growth ceased and formed nanographite clusters or defective diamond clusters (n-diamond). Even though DGHB60 films possess higher electrical conductivity (σ = 1549 S/cm) than the DGHB30 films, the EFE properties degraded. The implication of this result is that higher conductivity by itself does not guarantee better EFE properties. The nanosized diamond grains with needle-like geometry are the most promising ones for the electron emission, exclusively when they are encased in graphene-like layers. The salient feature of such materials with unique granular structure is that their conductivity and EFE properties can be tuned in a wide range, which makes them especially useful in practical applications.

Nanodiamonds for field emission: state of the art

The aim of this review is to highlight the recent advances and the main remaining challenges related to the issue of electron field emission (FE) from nanodiamonds. The roadmap for FE vacuum microelectronic devices envisages that nanodiamonds could become very important in a short time. The intrinsic properties of the nanodiamond materials indeed meet many of the requirements of cutting-edge technologies and further benefits can be obtained by tailored improvements of processing methodologies. The current strategies used to modulate the morphological and structural features of diamond to produce highly performing emitting systems are reported and discussed. The focus is on the current understanding of the FE process from nanodiamond-based materials and on the major concepts used to improve their performance. A short survey of non-conventional microsized cold cathodes based on nanodiamonds is also reported.

Role of hydrogen plasma pretreatment in improving passivation of the silicon surface for solar cells applications

We have investigated the role of hydrogen plasma pretreatment in promoting silicon surface passivation, in particular examining its effects on modifying the microstructure of the subsequently deposited thin hydrogenated amorphous silicon (a-Si:H) passivation film. We demonstrate that pretreating the silicon surface with hydrogen plasma for 40 s improves the homogeneity and compactness of the a-Si:H film by enhancing precursor diffusion and thus increasing the minority carrier lifetime (τ(eff)). However, excessive pretreatment also increases the density of dangling bond defects on the surface due to etching effects of the hydrogen plasma. By varying the duration of hydrogen plasma pretreatment in fabricating silicon heterojunction solar cells based on textured substrates, we also demonstrate that, although the performance of the solar cells shows a similar tendency to that of the τ(eff) on polished wafers, the optimal duration is prolonged owing to the differences in the surface morphology of the substrates. These results suggest that the hydrogen plasma condition must be carefully regulated to achieve the optimal level of surface atomic hydrogen coverage and avoid the generation of defects on the silicon wafer.

Enhancement of the electron field emission properties of ultrananocrystalline diamond films via hydrogen post-treatment

Enhanced electron field emission (EFE) properties due to hydrogen post-treatment at 600 °C have been observed for ultrananocrystalline diamond (UNCD) films. The EFE properties of H2-gas-treated UNCD films could be turned on at a low field of 5.3 V/μm, obtaining an EFE current density of 3.6 mA/cm(2) at an applied field of 11.7 V/μm that is superior to those of UNCD films treated with H2 plasma. Transmission electron microscopic investigations revealed that H2 plasma treatment induced amorphous carbon (a-C) (and graphitic) phases only on the surface region of the UNCD films but the interior region of the UNCD films still contained very small amounts of a-C (and graphitic) grain boundary phases, resulting in a resistive transport path and inferior EFE properties. On the other hand, H2 gas treatment induces a-C (and graphitic) phases along the grain boundary throughout the thickness of the UNCD films, resulting in creation of conduction channels for the electrons to transport from the bottom of the films to the top and hence the superior EFE properties.