1
|
Lee DY, Nam J, Lee GY, Lee I, Jang AR, Kim KS. Conveyor CVD to high-quality and productivity of large-area graphene and its potentiality. NANO CONVERGENCE 2024; 11:32. [PMID: 39143453 PMCID: PMC11324640 DOI: 10.1186/s40580-024-00439-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2024] [Accepted: 07/23/2024] [Indexed: 08/16/2024]
Abstract
The mass production of high-quality graphene is required for industrial application as a future electronic material. However, the chemical vapor deposition (CVD) systems previously studied for graphene production face bottlenecks in terms of quality, speed, and reproducibility. Herein, we report a novel conveyor CVD system that enables rapid graphene synthesis using liquid precursors. Pristine and nitrogen-doped graphene samples of a size comparable to a smartphone (15 cm × 5 cm) are successfully synthesized at temperatures of 900, 950, and 1000 °C using butane and pyridine, respectively. Raman spectroscopy allows optimization of the rapid-synthesis conditions to achieve uniformity and high quality. By conducting compositional analysis via X-ray photoelectron spectroscopy as well as electrical characterization, it is confirmed that graphene synthesis and nitrogen doping degree can be adjusted by varying the synthesis conditions. Testing the corresponding graphene samples as gas-sensor channels for NH3 and NO2 and evaluating their response characteristics show that the gas sensors exhibit polar characteristics in terms of gas adsorption and desorption depending on the type of gas, with contrasting characteristics depending on the presence or absence of nitrogen doping; nitrogen-doped graphene exhibits superior gas-sensing sensitivity and response speed compared with pristine graphene.
Collapse
Affiliation(s)
- Dong Yun Lee
- Department of Physics and Graphene Research Institute, Sejong University, Seoul, 05006, Republic of Korea
| | - Jungtae Nam
- Department of Physics and Graphene Research Institute, Sejong University, Seoul, 05006, Republic of Korea
| | - Gil Yong Lee
- Department of Physics and Graphene Research Institute, Sejong University, Seoul, 05006, Republic of Korea
| | - Imbok Lee
- Department of Physics and Graphene Research Institute, Sejong University, Seoul, 05006, Republic of Korea
| | - A-Rang Jang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan-si, Chungcheongnam-do, 31080, Republic of Korea.
| | - Keun Soo Kim
- Department of Physics and Graphene Research Institute, Sejong University, Seoul, 05006, Republic of Korea.
| |
Collapse
|
2
|
Nano-Physical Characterization of Chemical Vapor Deposition-Grown Monolayer Graphene for High Performance Electrode: Raman, Surface-Enhanced Raman Spectroscopy, and Electrostatic Force Microscopy Studies. NANOMATERIALS 2021; 11:nano11112839. [PMID: 34835607 PMCID: PMC8623610 DOI: 10.3390/nano11112839] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/25/2021] [Revised: 10/12/2021] [Accepted: 10/20/2021] [Indexed: 11/16/2022]
Abstract
To achieve high-quality chemical vapor deposition of monolayer graphene electrodes (CVD-MG), appropriate characterization at each fabrication step is essential. In this article, (1) Raman spectroscopy/microscopy are employed to unravel the contact effect between the CVD-MG and Cu foil in suspended/supported formation. (2) The Surface-Enhanced Raman spectroscopy (SERS) system is described, unveiling the presence of a z-directional radial breathing-like mode (RBLM) around 150 cm-1, which matches the Raman shift of the radial breathing mode (RBM) from single-walled carbon nanotubes (SWCNTs) around 150 cm-1. This result indicates the CVD-MG located between the Au NPs and Au film is not flat but comprises heterogeneous protrusions of some domains along the z-axis. Consequently, the degree of carrier mobility can be influenced, as the protruding domains result in lower carrier mobility due to flexural phonon-electron scattering. A strongly enhanced G-peak domain, ascribed to the presence of scrolled graphene nanoribbons (sGNRs), was observed, and there remains the possibility for the fabrication of sGNRs as sources of open bandgap devices. (3) Electrostatic force microscopy (EFM) is used for the measurement of surface charge distribution of graphene at the nanoscale and is crucial in substantiating the electrical performance of CVD-MG, which was influenced by the surface structure of the Cu foil. The ripple (RP) structures were determined using EFM correlated with Raman spectroscopy, exhibiting a higher tapping amplitude which was observed with structurally stable and hydrophobic RPs with a threading type than surrounding RPs. (4) To reduce the RP density and height, a plausible fabrication could be developed that controls the electrical properties of the CVD-MG by tuning the cooling rate.
Collapse
|
3
|
Fabrication of Carbon Nanomaterials Using Laser Scribing on Copper Nanoparticles-Embedded Polyacrylonitrile Films and Their Application in a Gas Sensor. Polymers (Basel) 2021; 13:polym13091423. [PMID: 33925077 PMCID: PMC8124524 DOI: 10.3390/polym13091423] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2021] [Revised: 04/18/2021] [Accepted: 04/26/2021] [Indexed: 01/04/2023] Open
Abstract
Carbon nanomaterials have attracted significant research attention as core materials in various industrial sectors owing to their excellent physicochemical properties. However, because the preparation of carbon materials is generally accompanied by high-temperature heat treatment, it has disadvantages in terms of cost and process. In this study, highly sensitive carbon nanomaterials were synthesized using a local laser scribing method from a copper-embedded polyacrylonitrile (CuPAN) composite film with a short processing time and low cost. The spin-coated CuPAN was converted into a carbonization precursor through stabilization and then patterned into a carbon nanomaterial of the desired shape using a pulsed laser. In particular, the stabilization process was essential in laser-induced carbonization, and the addition of copper promoted this effect as a catalyst. The synthesized material had a porous 3D structure that was easy to detect gas, and the resistance responses were detected as -2.41 and +0.97% by exposure to NO2 and NH3, respectively. In addition, the fabricated gas sensor consists of carbon materials and quartz with excellent thermal stability; therefore, it is expected to operate as a gas sensor even in extreme environments.
Collapse
|
4
|
Son M, Kim H, Jang J, Kim SY, Ki HC, Lee BH, Kim IS, Ham MH. Low-Power Complementary Logic Circuit Using Polymer-Electrolyte-Gated Graphene Switching Devices. ACS APPLIED MATERIALS & INTERFACES 2019; 11:47247-47252. [PMID: 31746181 DOI: 10.1021/acsami.9b16417] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The modulation of the electrical properties of graphene and its device configurations for low-power consumption are important in developing graphene-based logic electronics. Here, we demonstrate the change in the charge transport in graphene from ambipolar to unipolar using surface charge transfer doping of the polymer electrolyte. Unipolar graphene field-effect transistors (GFETs) were obtained by the surface treatment of poly(acrylic acid) (PAA) for p-type and poly(ethyleneimine) (PEI) for n-type as polymer-electrolyte gates. In addition, lithium perchlorate (LiClO4) in a polymer matrix can be used for the low-gate voltage operation of GFETs (less than ±3 V) because of its high gating efficiency. Using polymer-electrolyte-gated GFETs, complementary graphene inverters were fabricated with a voltage swing of 57% and maximum voltage gain (Vgain) of 1.1 at a low supply voltage (VDD = 1 V). This is expected to facilitate the development of graphene-based logic devices with low-cost, low-power, and flexible electronics.
Collapse
Affiliation(s)
- Myungwoo Son
- Photonic Energy Research Center , Korea Photonics Technology Institute (KOPTI) , Cheomdanbencheo-ro 108 beon-gil 9 , Buk-gu, Gwangju 61007 , Republic of Korea
| | | | | | | | - Hyun Chul Ki
- Photonic Energy Research Center , Korea Photonics Technology Institute (KOPTI) , Cheomdanbencheo-ro 108 beon-gil 9 , Buk-gu, Gwangju 61007 , Republic of Korea
| | | | | | | |
Collapse
|
5
|
Şimşek B. TOPSIS based Taguchi design optimization for CVD growth of graphene using different carbon sources: Graphene thickness, defectiveness and homogeneity. Chin J Chem Eng 2019. [DOI: 10.1016/j.cjche.2018.08.004] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
|
6
|
Wang B, Wang Y, Wang G, Zhang Q. Influence of cooling-induced edge morphology evolution during chemical vapor deposition on H 2 etching of graphene domains. RSC Adv 2019; 9:5865-5869. [PMID: 35515905 PMCID: PMC9060803 DOI: 10.1039/c8ra09265f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/09/2018] [Accepted: 01/28/2019] [Indexed: 11/26/2022] Open
Abstract
In this paper, we studied the influence of edge morphology evolution during the chemical vapor deposition cooling process on H2 etching of graphene domains. Hexagonal graphene domains were synthesized on a Cu substrate and etched with H2 at atmospheric pressure. After etching, two kinds of graphene edge morphologies were observed, which were closely associated with the cooling process. A visible curvature was observed at the graphene edges via an atomic force microscope, indicating that the graphene edges sank into the Cu surface during the cooling process, which protected the graphene edges from etching. This work demonstrates the changes in graphene edges during cooling and sheds light on the etching mechanism of graphene edges on a Cu substrate. The entire morphological variation of CVD graphene during cooling and etching.![]()
Collapse
Affiliation(s)
- Bin Wang
- College of New Energy
- Bohai University
- Jinzhou City
- China
| | - Yuwei Wang
- Department of Chemistry and Environmental Sciences
- Jinzhou City
- China
| | - Guiqiang Wang
- College of New Energy
- Bohai University
- Jinzhou City
- China
| | - Qingguo Zhang
- College of New Energy
- Bohai University
- Jinzhou City
- China
| |
Collapse
|
7
|
Jeong J, Min KA, Shin DH, Yang WS, Yoo J, Lee SW, Hong S, Hong YJ. Remote homoepitaxy of ZnO microrods across graphene layers. NANOSCALE 2018; 10:22970-22980. [PMID: 30500036 DOI: 10.1039/c8nr08084d] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional atomic layered materials (2d-ALMs) are emerging candidates for use as epitaxial seed substrates for transferrable epilayers. However, the micrometer-sized domains of 2d-ALMs preclude their practical use in epitaxy because they cause crystallographically in-plane disordering of the overlayer. Ultrathin graphene can penetrate the electric dipole momentum from an underlying crystal layer to the graphene surface, which then drives it to crystallize the overlayer during the initial growth stage, thus resulting in substantial energy saving. This study demonstrates the remote homoepitaxy of ZnO microrods (MRs) on ZnO substrates across graphene layers via a hydrothermal method. Despite the presence of poly-domain graphene in between the ZnO substrate and ZnO MRs, the MRs were epitaxially grown on a- and c-plane ZnO substrates, whose in-plane alignments were homogeneous within the wafer's size. Transmission electron microscopy revealed a homoepitaxial relationship between the overlayer MRs and the substrate. Density-functional theory calculations suggested that the charge redistribution occurring near graphene induces the electric dipole formation, so the attracted adatoms led to the formation of the remote homoepitaxial overlayer. Due to a strong potential field caused by long-range charge transfer given from the substrate, even the use of bi-layer and tri-layer graphene resulted in remote homoepitaxial ZnO MRs. The effects of substrate crystal planes were also theoretically and empirically investigated. The ability of graphene, which can be released from the mother substrate without covalent bonds, was utilized to transfer the overlayer MR arrays. This method opens a way for producing well aligned, transferrable epitaxial nano/microstructure arrays while regenerating the substrate for cost-saving device manufacturing.
Collapse
Affiliation(s)
- Junseok Jeong
- Department of Nanotechnology & Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea. and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Republic of Korea and Graphene Research Institute, Sejong University, Seoul 05006, Republic of Korea
| | - Kyung-Ah Min
- Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Republic of Korea and Graphene Research Institute, Sejong University, Seoul 05006, Republic of Korea and Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea.
| | - Dong Hoon Shin
- Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Woo Seok Yang
- Nano Materials Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi-do 13509, Republic of Korea
| | - Jinkyoung Yoo
- Center for integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | - Sang Wook Lee
- Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Suklyun Hong
- Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Republic of Korea and Graphene Research Institute, Sejong University, Seoul 05006, Republic of Korea and Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea.
| | - Young Joon Hong
- Department of Nanotechnology & Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea. and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Republic of Korea
| |
Collapse
|
8
|
Khanaki A, Tian H, Xu Z, Zheng R, He Y, Cui Z, Yang J, Liu J. Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures. NANOTECHNOLOGY 2018; 29:035602. [PMID: 29165320 DOI: 10.1088/1361-6528/aa9c58] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We carried out a systematic study of hexagonal boron nitride/graphene (h-BN/G) heterostructure growth by introducing high incorporation of a carbon (C) source on a heated cobalt (Co) foil substrate followed by boron and nitrogen sources in a molecular beam epitaxy system. With the increase of C incorporation in Co, three distinct regions of h-BN/G heterostructures were observed from region (1) where the C saturation was not attained at the growth temperature (900 °C) and G was grown only by precipitation during the cooling process to form a 'G network' underneath the h-BN film; to region (2) where the Co substrate was just saturated by C atoms at the growth temperature and a part of G growth occurs isothermally to form G islands and another part by precipitation, resulting in a non-uniform h-BN/G film; and to region (3) where a continuous layered G structure was formed at the growth temperature and precipitated C atoms added additional G layers to the system, leading to a uniform h-BN/G film. It is also found that in all three h-BN/G heterostructure growth regions, a 3 h h-BN growth at 900 °C led to h-BN film with a thickness of 1-2 nm, regardless of the underneath G layers' thickness or morphology. Growth time and growth temperature effects have been also studied.
Collapse
|
9
|
Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth. Sci Rep 2017; 7:45358. [PMID: 28367988 PMCID: PMC5377254 DOI: 10.1038/srep45358] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2016] [Accepted: 02/22/2017] [Indexed: 11/08/2022] Open
Abstract
The high-quality graphene film can be grown on single-crystal Cu substrate by seamlessly stitching the aligned graphene domains. The roles of O2 and H2 have been intensively studied in the graphene growth kinetics, including lowering the nucleation sites and tailoring the domain structures. However, how the O2 and H2 influence Cu orientations during recrystallization prior to growing graphene, still remains unclear. Here we report that the oxidation of Cu surface tends to stabilize the Cu(001) orientation while impedes the evolution of Cu(111) single domain during annealing process. The crystal orientation-controlled synthesis of aligned graphene seeds is further realized on the long-range ordered Cu(111) substrate. With decreasing the thickness of oxide layer on Cu surface by introducing H2, the Cu(001) orientation changes into Cu(111) orientation. Meanwhile, the average domain size of Cu foils is increased from 50 μm to larger than 1000 μm. The density functional theory calculations reveal that the oxygen increases the energy barrier for Cu(111) surface and makes O/Cu(001) more stable than O/Cu(111) structure. Our work can be helpful for revealing the roles of O2 and H2 in controlling the formation of Cu single-crystal substrate as well as in growing high-quality graphene films.
Collapse
|
10
|
Abd Elhamid AEM, Hafez MA, Aboulfotouh AM, Azzouz IM. Study of graphene growth on copper foil by pulsed laser deposition at reduced temperature. JOURNAL OF APPLIED PHYSICS 2017; 121. [DOI: 10.1063/1.4973736] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Graphene has been successfully grown on commercial copper foil at low temperature of 500 °C by pulsed laser deposition (PLD). X-ray diffraction patterns showed that films have been grown in the presence of Cu(111) and Cu(200) facets. Raman spectroscopy was utilized to study the effects of temperature, surface structure, and cooling rate on the graphene growth. Raman spectra indicate that the synthesis of graphene layers rely on the surface quality of the Cu substrate together with the proper cooling profile coupled with graphene growth temperature. PLD-grown graphene film on Cu has been verified by transmission electron microscopy. Surface mediated growth of graphene on Cu foil substrate revealed to have a favorable catalytic effect. High growth rate of graphene and less defects can be derived using fast cooling rate.
Collapse
Affiliation(s)
- Abd Elhamid M. Abd Elhamid
- Cairo University 1 Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, , El-Giza 12613, Egypt
| | - Mohamed A. Hafez
- Cairo University 1 Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, , El-Giza 12613, Egypt
| | | | - Iftitan M. Azzouz
- Cairo University 1 Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, , El-Giza 12613, Egypt
| |
Collapse
|
11
|
Park WH, Jo I, Hong BH, Cheong H. Controlling the ripple density and heights: a new way to improve the electrical performance of CVD-grown graphene. NANOSCALE 2016; 8:9822-9827. [PMID: 27120359 DOI: 10.1039/c6nr00706f] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report a new way to enhance the electrical performances of large area CVD-grown graphene through controlling the ripple density and heights after transfer onto SiO2/Si substrates by employing different cooling rates during fabrication. We find that graphene films prepared with a high cooling rate have reduced ripple density and heights and improved electrical characteristics such as higher electron/hole mobilities as well as reduced sheet resistance. The corresponding Raman analysis also shows a significant decrease of the defects when a higher cooling rate is employed. We suggest a model that explains the improved morphology of the graphene film obtained with higher cooling rates. From these points of view, we can suggest a new pathway toward a relatively lower density and heights of ripples in order to reduce the flexural phonon-electron scattering effect, leading to higher lateral carrier mobilities.
Collapse
Affiliation(s)
- Won-Hwa Park
- Department of Physics, Sogang University, Seoul 04107, South Korea.
| | | | | | | |
Collapse
|
12
|
Zhang H, Zhang Y, Zhang Y, Chen Z, Sui Y, Ge X, Yu G, Jin Z, Liu X. Edge morphology evolution of graphene domains during chemical vapor deposition cooling revealed through hydrogen etching. NANOSCALE 2016; 8:4145-4150. [PMID: 26866950 DOI: 10.1039/c5nr06624g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
During cooling, considerable changes such as wrinkle formation and edge passivation occur in graphene synthesized on the Cu substrate. Wrinkle formation is caused by the difference in the thermal expansion coefficients of graphene and its substrate. This work emphasizes the cooling-induced edge passivation. The graphene-edge passivation can limit the regrowth of graphene at the domain edge. Our work shows that silicon-containing particles tend to accumulate at the graphene edge, and the formation of these particles is related to cooling. Furthermore, a clear curvature can be observed at the graphene edge on the Cu substrate, indicating the sinking of the graphene edge into the Cu substrate. Both the sinking of the graphene edge and the accumulation of silicon-containing particles are responsible for edge passivation. In addition, two kinds of graphene edge morphologies are observed after etching, which were explained by different etching mechanisms that illustrate the changes of the graphene edge during cooling.
Collapse
Affiliation(s)
- Haoran Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China. and University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China
| | - Yanhui Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
| | - Yaqian Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China. and University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China
| | - Zhiying Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
| | - Yanping Sui
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
| | - Xiaoming Ge
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China. and University of Chinese Academy of Sciences, No.19A Yuquan Road, Beijing 100049, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
| | - Zhi Jin
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 West Beitucheng Road, Beijing 100029, China
| | - Xinyu Liu
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 West Beitucheng Road, Beijing 100029, China
| |
Collapse
|
13
|
Bointon TH, Barnes MD, Russo S, Craciun MF. High Quality Monolayer Graphene Synthesized by Resistive Heating Cold Wall Chemical Vapor Deposition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:4200-6. [PMID: 26053564 PMCID: PMC4744682 DOI: 10.1002/adma.201501600] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2015] [Revised: 05/04/2015] [Indexed: 05/20/2023]
Abstract
The growth of graphene using resistive‐heating cold‐wall chemical vapor deposition (CVD) is demonstrated. This technique is 100 times faster and 99% lower cost than standard CVD. A study of Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and electrical magneto‐transport measurements shows that cold‐wall CVD graphene is of comparable quality to natural graphene. Finally, the first transparent flexible graphene capacitive touch‐sensor is demonstrated.
Collapse
Affiliation(s)
- Thomas H Bointon
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QL, UK
| | - Matthew D Barnes
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QL, UK
| | - Saverio Russo
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QL, UK
| | - Monica F Craciun
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QL, UK
| |
Collapse
|