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Li Y, Huang Y, Liu X, Wang Y, Yuan L. Density functional theory study on the formation mechanism and electrical properties of two-dimensional electron gas in biaxial-strained LaGaO 3 /BaSnO 3 heterostructure. Sci Rep 2024; 14:10259. [PMID: 38704471 DOI: 10.1038/s41598-024-60893-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/03/2024] [Accepted: 04/29/2024] [Indexed: 05/06/2024] Open
Abstract
The two-dimensional electron gas (2DEG) in BaSnO3 -based heterostructure (HS) has received tremendous attention in the electronic applications because of its excellent electron migration characteristic. We modeled the n-type (LaO)+ /(SnO2 )0 interface by depositing LaGaO3 film on the BaSnO3 substrate and explored strain effects on the critical thickness for forming 2DEG and electrical properties of LaGaO3 /BaSnO3 HS system using first-principles electronic structure calculations. The results indicate that to form 2DEG in the unstrained LaGaO3 /BaSnO3 HS system, a minimum thickness of approximately 4 unit cells of LaGaO3 film is necessary. An increased film thickness of LaGaO3 is required to form the 2DEG for -3%-biaxially-strained HS system and the critical thickness is 3 unit cells for 3%-baxially-strained HS system, which is caused by the strain-induced change of the electrostatic potential in LaGaO3 film. In addition, the biaxial strain plays an important role in tailoring the electrical properties of 2DEG in LaGaO3 /BaSnO3 HS syestem. The interfacial charge carrier density, electron mobility and electrical conductivity can be optimized when a moderate tensile strain is applied on the BaSnO3 substrate in the ab-plane.
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Affiliation(s)
- Yuling Li
- Key Laboratory of Fluid and Power Machinery, School of Material Science and Engineering, Xihua University, Chengdu, 610039, People's Republic of China
| | - Yuxi Huang
- Key Laboratory of Fluid and Power Machinery, School of Material Science and Engineering, Xihua University, Chengdu, 610039, People's Republic of China
| | - Xiaohua Liu
- Key Laboratory of Fluid and Power Machinery, School of Material Science and Engineering, Xihua University, Chengdu, 610039, People's Republic of China
| | - Yaqin Wang
- Key Laboratory of Fluid and Power Machinery, School of Material Science and Engineering, Xihua University, Chengdu, 610039, People's Republic of China.
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
| | - Le Yuan
- Key Laboratory of Fluid and Power Machinery, School of Material Science and Engineering, Xihua University, Chengdu, 610039, People's Republic of China
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Yin H, Wang S, Jin K. Enhanced Rashba Spin Orbit Coupling and Magnetic Behavior at Oxide Heterointerfaces by Optical Gating. J Phys Chem Lett 2023; 14:8684-8690. [PMID: 37733252 DOI: 10.1021/acs.jpclett.3c01811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/22/2023]
Abstract
Complex oxide heterointerfaces have been a hot research spot due to their rich physical phenomena and broad quantum coherence that respond to multiple external stimuli. Among these external stimuli, light is a very powerful one to manipulate properties such as carrier density and spin characteristics. However, achieving a light-magnetic correlation is in high demand for multifield responding devices, and its intrinsic mechanism remains unclear. Here, by illuminating Nd0.86Sr0.14Al0.86Ni0.14O3-SrTiO3 heterointerfaces using 360 nm light, we observe a series of interesting physical phenomena, like enhanced magnetoresistance (MR). More interestingly, a band splitting and strong Rashba spin-orbit coupling (SOC) effect occur after illumination, accompanied by a magnetic feature and thus leading to an anomalous Hall effect (AHE). Upon optical gating, the magnetism can be caused by Rashba SOC induced spin-orbit torque (SOT). The work will be sure to have great importance in both theoretical studies and all-oxide devices.
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Affiliation(s)
- Hang Yin
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China
| | - Shuanhu Wang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China
| | - Kexin Jin
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China
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Rubab SF, Nazir S. Interplay between Spin-Orbital Coupling and Electron-Correlation: Induction of Phase Transitions and Giant Magnetic Anisotropy in Strained LaSr_{1−x}Ca_xNiReO_6. Phys Chem Chem Phys 2022; 24:17174-17184. [DOI: 10.1039/d2cp01673g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In recent decades, 3d-5d based double perovskite oxides (DPO) have received considerable attention due to the existence of the Mott-insulating (MI) state, which is owing to the spin-orbit coupling (SOC)...
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Nazir S. Strain-driven half-metallicity in a ferri-magnetic Mott-insulator Lu 2NiIrO 6: a first-principles perspective. Phys Chem Chem Phys 2020; 22:17969-17977. [PMID: 32748923 DOI: 10.1039/d0cp02811h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Half-metallic ferromagnetic/ferrimagnetic (FiM) materials are a matter of enormous interest due to their potential technological applications in solid-state electronic devices. In this way, strain plays an important role to tune or control the physical properties of the systems; therefore, the influence of both biaxial ([110]) and hydrostatic ([111]) strain on the electronic and magnetic properties of recently synthesized double perovskite oxide Lu2NiIrO6 is investigated using density-functional theory calculations. The unstrained system exhibits a FiM Mott-insulating (i.e., having an energy gap of 0.20 eV) ground state due to strong antiferromagnetic superexchange coupling between high-energy half-filled Ni2+-e2g↑ and low-energy partially filled Ir4+ t32g↑t22g↓ orbitals. Interestingly, a half-metallic FiM state is predicted under biaxial and hydrostatic compressive strains of -8% and -6%, respectively. The admixture of Ir 5d orbitals in the spin-majority channel is mainly responsible for the conductivity with small contributions from Ni 3d orbitals. In contrast, all the tensile strain systems show almost the same electronic behavior (Mott-insulating FiM states) as found in the case of the unstrained system. The magnetic moments of the Ni (Ir) ion slightly decrease and increase as a function of compressive and tensile strains due to shortening and lengthening of the Ni-O(Ir-O) bond lengths, respectively. Moreover, our calculations show that compressive strain enhances the structural distortions, which could help to increase the Curie temperature of the system.
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Affiliation(s)
- Safdar Nazir
- Department of Physics, University of Sargodha, 40100 Sargodha, Pakistan.
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Ain QU, Naseem S, Nazir S. Robust half-metallicity and magnetic phase transition in Sr 2CrReO 6 via strain engineering. Sci Rep 2020; 10:13778. [PMID: 32792535 PMCID: PMC7426967 DOI: 10.1038/s41598-020-70768-7] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2020] [Accepted: 07/23/2020] [Indexed: 12/02/2022] Open
Abstract
Using ab-initio calculations, the electronic and magnetic properties of double perovskite oxide \documentclass[12pt]{minimal}
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\begin{document}$${\text{Sr}}_2 {\text{CrReO}}_6$$\end{document}Sr2CrReO6 with two type of strains: biaxial (along the [110]-direction) and hydrostatic (along [111]-direction) are investigated. The ground state of the unstrained system is half-metallic ferrimagnetic, due to a strong antiferromagnetic (AFM) coupling between Cr and Re atoms within both (GGA and GGA+U) exchange-correlation potentials. It is demonstrated that the robustness of half-metallicity can be preserved under the influence of both biaxial and hydrostatic strains. Interestingly, a transition from ferri-to-ferromagnetic is established due to Re spin flipping to that of the Cr ion (i.e. Cr and Re spin becomes parallel) within the GGA+U method for both biaxial and hydrostatic tensile strains of \documentclass[12pt]{minimal}
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\begin{document}$$\ge +2\%$$\end{document}≥+2%. The strong confinement of orbitals due to tensile strain results in the decrease of electron hopping which further reduced the AFM coupling strength between Cr and Re atoms, this leads to a ferri-to-ferromagnetic transition. However, the GGA scheme holds the ferrimagnetic state with both kinds of strains. This work shows that tensile strain is a feasible way to optimize the magnetic properties of perovskite oxides, which are presumed to be beneficial for spintronic technology.
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Affiliation(s)
- Qurat-Ul Ain
- Department of Physics, University of Sargodha, Sargodha, 40100, Pakistan
| | - Shahnila Naseem
- Department of Physics, University of Sargodha, Sargodha, 40100, Pakistan
| | - Safdar Nazir
- Department of Physics, University of Sargodha, Sargodha, 40100, Pakistan.
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Li G, Huang H, Peng S, Xiong Y, Xiao Y, Yan S, Cao Y, Tang M, Li Z. Two-dimensional polar metals in KNbO 3/BaTiO 3 superlattices: first-principle calculations. RSC Adv 2019; 9:35499-35508. [PMID: 35528067 PMCID: PMC9074721 DOI: 10.1039/c9ra06209b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2019] [Accepted: 10/25/2019] [Indexed: 11/21/2022] Open
Abstract
Polar metals, commonly defined by the coexistence of polar structure and metallicity, are thought to be scarce because free carriers eliminate internal dipoles that may arise owing to asymmetric charge distributions. By using first-principle electronic structure calculations, we explored the possibility of producing metallic states in the polar/nonpolar KNbO3/BaTiO3 superlattice (SL) composed of two prototypical ferroelectric materials: BaTiO3 (BTO) and KNbO3 (KNO). Two types of polar/nonpolar interfaces, p-type (KO)−/(TiO2)0 and n-type (NbO2)+/(BaO)0, which can be constituted into two symmetric NbO2/BaO–NbO2/BaO (NN-type) and KO/TiO2–KO/TiO2 (PP-type) SL, as well as one asymmetric KO/TiO2–NbO2/BaO (PN-type) SL. The spatial distribution of ferroelectric distortions and their conductive properties are found to be extraordinarily sensitive to the interfacial configurations. An insulator-to-metal transition is found in each unit cell of the symmetric interfacial SL models: one exhibiting quasi-two-dimensional n-type conductivity for NN-type SL, while the other being quasi-two-dimensional p-type conductivity for PP-type SL. The anisotropic coexistence of in-plane orientation of free carriers and out-of-plane orientation of ferroelectric polarization in KNO/BTO SL indicates that in-plane free carriers can not eliminate the out-of-plane dipoles. Our results provide a road map to create two-dimensional polar metals in insulating perovskite oxide SL, which is expected to promote applications of new quantum devices. Polar metals, commonly defined by the coexistence of polar structure and metallicity, are thought to be scarce because free carriers eliminate internal dipoles that may arise owing to asymmetric charge distributions.![]()
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Affiliation(s)
- Gang Li
- School of Materials Science and Engineering, Xiangtan University Xiangtan Hunan 411105 China
| | - Huiyu Huang
- School of Materials Science and Engineering, Xiangtan University Xiangtan Hunan 411105 China
| | - Shaoqin Peng
- School of Materials Science and Engineering, Xiangtan University Xiangtan Hunan 411105 China
| | - Ying Xiong
- School of Mathematics and Computational Science, Xiangtan University Xiangtan 411105 China
| | - Yongguang Xiao
- School of Materials Science and Engineering, Xiangtan University Xiangtan Hunan 411105 China
| | - Shaoan Yan
- School of Mechanical Engineering, Xiangtan University Xiangtan 411105 China
| | - Yanwei Cao
- CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo Zhejiang 315201 China
| | - Minghua Tang
- School of Materials Science and Engineering, Xiangtan University Xiangtan Hunan 411105 China
| | - Zheng Li
- School of Materials Science and Engineering, Xiangtan University Xiangtan Hunan 411105 China
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Thickness Control of the Spin-Polarized Two-Dimensional Electron Gas in LaAlO 3/BaTiO 3 Superlattices. Sci Rep 2018; 8:467. [PMID: 29323182 PMCID: PMC5765129 DOI: 10.1038/s41598-017-18858-x] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/12/2017] [Accepted: 12/18/2017] [Indexed: 11/08/2022] Open
Abstract
We explored the possibility of increasing the interfacial carrier quantum confinement, mobility and conductivity in the (LaAlO3)n/(BaTiO3)n superlattices by thickness regulation using the first-principles electronic structure calculations. Through constructing two different interfacial types of LaAlO3/BaTiO3 superlattices, we discovered that the LaO/TiO2 interface is preferred from cleavage energy consideration. We then studied the electronic characteristics of two-dimensional electron gas (2DEG) produced at the LaO/TiO2 interface in the LaAlO3/BaTiO3 superlattices via spin-polarized density functional theory calculations. The charge carrier density of 2DEG has a magnitude of 1014 cm−2 (larger than the traditional system LaAlO3/SrTiO3), which is mainly provided by the interfacial Ti 3dxy orbitals when the thicknesses of LaAlO3 and BaTiO3 layers are over 4.5 unit cells. We have also revealed the interfacial electronic characteristics of the LaAlO3/BaTiO3 system, by showing the completely spin-polarized 2DEG mostly confined at the superlattice interface. The interfacial charge carrier mobility and conductivity are found to be converged beyond the critical thickness. Therefore, we can regulate the interfacial confinement for the spin-polarized 2DEG and quantum transport properties in LaAlO3/BaTiO3 superlattice via controlling the thicknesses of the LaAlO3 and BaTiO3 layers.
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Piyanzina II, Kopp T, Lysogorskiy YV, Tayurskii DA, Eyert V. Electronic properties of LaAlO 3/SrTiO 3 n-type interfaces: a GGA+U study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2017; 29:095501. [PMID: 28067208 DOI: 10.1088/1361-648x/aa57ac] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The role of electronic correlation effects for a realistic description of the electronic properties of [Formula: see text]/[Formula: see text] heterostructures as covered by the on-site Coulomb repulsion within the GGA+U approach is investigated. Performing a systematic variation of the values of the Coulomb parameters applied to the Ti 3d and La 4f orbitals we put previous suggestions to include a large value for the La 4f states into perspective. Furthermore, our calculations provide deeper insight into the band gap landscape in the space spanned by these Coulomb parameters and the resulting complex interference effects. In addition, we identify important correlations between the local Coulomb interaction within the La 4f shell, the band gap, and the atomic displacements at the interface. In particular, these on-site Coulomb interactions influence buckling within the LaO interface layer, which via its strong coupling to the electrostatic potential in the LAO overlayer causes considerable shifts of the electronic states at the surface and eventually controls the band gap.
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Affiliation(s)
- I I Piyanzina
- Institute of Physics, Kazan Federal University, Kremlyovskaya St. 18, 420008 Kazan, Russia. EP VI and Center for Electronic Correlations and Magnetism, Universität Augsburg, Universitätsstraße 1, 86135 Augsburg, Germany
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Cheng J, Luo J, Yang K. Comparison Studies of Interfacial Electronic and Energetic Properties of LaAlO 3/TiO 2 and TiO 2/LaAlO 3 Heterostructures from First-Principles Calculations. ACS APPLIED MATERIALS & INTERFACES 2017; 9:7682-7690. [PMID: 28139115 DOI: 10.1021/acsami.6b12254] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
By using first-principles electronic structure calculations, we studied electronic and energetic properties of perovskite oxide heterostructures with different epitaxial growth order between anatase TiO2 and LaAlO3. Two types of heterostructures, i.e., TiO2 film grown on LaAlO3 substrate (TiO2/LaAlO3) and LaAlO3 film grown on TiO2 substrate (LaAlO3/TiO2), were modeled. The TiO2/LaAlO3 model is intrinsically metallic and thus does not exhibit an insulator-to-metal transition as TiO2 film thickness increases; in contrast, the LaAlO3/TiO2 model shows an insulator-to-metal transition as the LaAlO3 film thickness increases up to 4 unit cells. The former model has a larger interfacial charge carrier density (n ∼ 1014 cm-2) and smaller electron effective mass (0.47me) than the later one (n ∼ 1013 cm-2, and 0.70me). The interfacial energetics calculations indicate that the TiO2/LaAlO3 model is energetically more favorable than the LaAlO3/TiO2 model, and the former has a stronger interface cohesion than the later model. This research provides fundamental insights into the different interfacial electronic and energetic properties of TiO2/LaAlO3 and LaAlO3/TiO2 heterostructures.
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Affiliation(s)
- Jianli Cheng
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Jian Luo
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Kesong Yang
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
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Guo H, Saidi WA, Zhao J. Tunability of the two-dimensional electron gas at the LaAlO 3/SrTiO 3 interface by strain-induced ferroelectricity. Phys Chem Chem Phys 2016; 18:28474-28484. [PMID: 27711681 DOI: 10.1039/c6cp04769f] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The two-dimensional electron gas (2DEG) formed at the interface between two insulating materials LaAlO3 (LAO) and SrTiO3 (STO) has recently generated a lot of interest. Here, based on first-principles density functional theory calculations, we investigate the existence and stability of the 2DEG under the application of a biaxial strain on the LAO/STO(001) heterostructure. The compressive strain induces ferroelectric (FE) polarization in STO, which allows for the tunability of the 2DEG by reversing the STO polarization orientation. We show that the formation of the 2DEG is unstable when LAO and STO have the same polarization direction. On the other hand, the 2DEG will always form if the two polarizations are in the opposite directions regardless of the LAO thickness, which is in contrast to the unstrained interface that has a critical thickness for stabilizing the 2DEG. We show that the underpinnings of this behavior are due to charge passivation and band gap alignment.
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Affiliation(s)
- Hongli Guo
- ICQD/Hefei National Laboratory for Physical Sciences at Microscale, and Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China. and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wissam A Saidi
- Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, USA.
| | - Jin Zhao
- ICQD/Hefei National Laboratory for Physical Sciences at Microscale, and Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China. and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China and Department of Physics, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, USA
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Yang K, Nazir S, Behtash M, Cheng J. High-Throughput Design of Two-Dimensional Electron Gas Systems Based on Polar/Nonpolar Perovskite Oxide Heterostructures. Sci Rep 2016; 6:34667. [PMID: 27708415 PMCID: PMC5052574 DOI: 10.1038/srep34667] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2016] [Accepted: 09/19/2016] [Indexed: 11/15/2022] Open
Abstract
The two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides such as LaAlO3 and SrTiO3 (STO) is of fundamental and practical interest because of its novel interfacial conductivity and its promising applications in next-generation nanoelectronic devices. Here we show that a group of combinatorial descriptors that characterize the polar character, lattice mismatch, band gap, and the band alignment between the perovskite-oxide-based band insulators and the STO substrate, can be introduced to realize a high-throughput (HT) design of SrTiO3-based 2DEG systems from perovskite oxide quantum database. Equipped with these combinatorial descriptors, we have carried out a HT screening of all the polar perovskite compounds, uncovering 42 compounds of potential interests. Of these, Al-, Ga-, Sc-, and Ta-based compounds can form a 2DEG with STO, while In-based compounds exhibit a strain-induced strong polarization when deposited on STO substrate. In particular, the Ta-based compounds can form 2DEG with potentially high electron mobility at (TaO2)+/(SrO)0 interface. Our approach, by defining materials descriptors solely based on the bulk materials properties, and by relying on the perovskite-oriented quantum materials repository, opens new avenues for the discovery of perovskite-oxide-based functional interface materials in a HT fashion.
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Affiliation(s)
- Kesong Yang
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, USA
| | - Safdar Nazir
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, USA
| | - Maziar Behtash
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, USA
| | - Jianli Cheng
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, USA
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12
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Atomic-resolved depth profile of strain and cation intermixing around LaAlO3/SrTiO3 interfaces. Sci Rep 2016; 6:28118. [PMID: 27301609 PMCID: PMC4908387 DOI: 10.1038/srep28118] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2016] [Accepted: 05/27/2016] [Indexed: 11/09/2022] Open
Abstract
Novel behavior has been observed at the interface of LaAlO3/SrTiO3 heterostructures such as two dimensional metallic conductivity, magnetic scattering and superconductivity. However, both the origins and quantification of such behavior have been complicated due to an interplay of mechanical, chemical and electronic factors. Here chemical and strain profiles near the interface of LaAlO3/SrTiO3 heterostructures are correlated. Conductive and insulating samples have been processed, with thicknesses respectively above and below the commonly admitted conductivity threshold. The intermixing and structural distortions within the crystal lattice have been quantitatively measured near the interface with a depth resolution of unit cell size. A strong link between intermixing and structural distortions at such interfaces is highlighted: intermixing was more pronounced in the hetero-couple with conductive interface, whereas in-plane compressive strains extended deeper within the substrate of the hetero-couple with the insulating interface. This allows a better understanding of the interface local mechanisms leading to the conductivity.
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Wang Y, Tang W, Cheng J, Behtash M, Yang K. Creating Two-Dimensional Electron Gas in Polar/Polar Perovskite Oxide Heterostructures: First-Principles Characterization of LaAlO3/A(+)B(5+)O3. ACS APPLIED MATERIALS & INTERFACES 2016; 8:13659-13668. [PMID: 27160513 DOI: 10.1021/acsami.6b02399] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
By using first-principles electronic structure calculations, we explored the possibility of producing two-dimensional electron gas (2DEG) at the polar/polar (LaO)(+)/(BO2)(+) interface in the LaAlO3/A(+)B(5+)O3 (A = Na and K, B = Nb and Ta) heterostructures (HS). Unlike the prototype polar/nonpolar LaAlO3/SrTiO3 HS system where there exists a least film thickness of four LaAlO3 unit cells to have an insulator-to-metal transition, we found that the polar/polar LaAlO3/A(+)B(5+)O3 HS systems are intrinsically conducting at their interfaces without an insulator-to-metal transition. The interfacial charge carrier densities of these polar/polar HS systems are on the order of 10(14) cm(-2), much larger than that of the LaAlO3/SrTiO3 system. This is mainly attributed to two donor layers, i.e., (LaO)(+) and (BO2)(+) (B = Nb and Ta), in the polar/polar LaAlO3/A(+)B(5+)O3 systems, while only one (LaO)(+) donor layer in the polar/nonpolar LaAlO3/SrTiO3 system. In addition, it is expected that, due to less localized Nb 4d and Ta 5d orbitals with respect to Ti 3d orbitals, these LaAlO3/A(+)B(5+)O3 HS systems can exhibit potentially higher electron mobility because of their smaller electron effective mass than that in the LaAlO3/SrTiO3 system. Our results demonstrate that the electronic reconstruction at the polar/polar interface could be an alternative way to produce superior 2DEG in the perovskite-oxide-based HS systems.
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Affiliation(s)
- Yaqin Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu, Sichuan 610054, P. R. China
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Wu Tang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu, Sichuan 610054, P. R. China
| | - Jianli Cheng
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Maziar Behtash
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Kesong Yang
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
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Nazir S, Behtash M, Cheng J, Luo J, Yang K. Nb and Ta layer doping effects on the interfacial energetics and electronic properties of LaAlO3/SrTiO3 heterostructure: first-principles analysis. Phys Chem Chem Phys 2016; 18:2379-88. [PMID: 26562134 DOI: 10.1039/c5cp05100b] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The two-dimensional electron gas (2DEG) formed at the n-type (LaO)(+1)/(TiO2)(0) interface in the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) has emerged as a prominent research area because of its great potential for nanoelectronic applications. Due to its practical implementation in devices, desired physical properties such as high charge carrier density and mobility are vital. In this respect, 4d and 5d transition metal doping near the interfacial region is expected to tailor electronic properties of the LAO/STO HS system effectively. Herein, we studied Nb and Ta-doping effects on the energetics, electronic structure, interfacial charge carrier density, magnetic moment, and the charge confinements of the 2DEG at the n-type (LaO)(+1)/(TiO2)(0) interface of LAO/STO HS using first-principles density functional theory calculations. We found that the substitutional doping of Nb(Ta) at Ti [Nb(Ta)@Ti] and Al [Nb(Ta)@Al] sites is energetically more favorable than that at La [Nb(Ta)@La] and Sr [Nb(Ta)@Sr] sites, and under appropriate thermodynamic conditions, the changes in the interfacial energy of HS systems upon Nb(Ta)@Ti and Nb(Ta)@Al doping are negative, implying that the formation of these structures is energetically favored. Our calculations also showed that Nb(Ta)@Ti and Nb(Ta)@Al doping significantly improve the interfacial charge carrier density with respect to that of the undoped system, which is because the Nb(Ta) dopant introduces excess free electrons into the system, and these free electrons reside mainly on the Nb(Ta) ions and interfacial Ti ions. Hence, along with the Ti 3d orbitals, the Nb 4d and Ta 5d orbitals also contribute to the interfacial metallic states; accordingly, the magnetic moments on the interfacial Ti ions increase significantly. As expected, the Nb@Al and Ta@Al doped LAO/STO HS systems show higher interfacial charge carrier density than the undoped and other doped systems. In contrast, Nb@Ti and Ta@Ti doped systems may show higher charge carrier mobility because of the lower electron effective mass.
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Affiliation(s)
- Safdar Nazir
- Department of NanoEngineering, University of California San Diego, La Jolla, USA.
| | - Maziar Behtash
- Department of NanoEngineering, University of California San Diego, La Jolla, USA.
| | - Jianli Cheng
- Department of NanoEngineering, University of California San Diego, La Jolla, USA.
| | - Jian Luo
- Department of NanoEngineering, University of California San Diego, La Jolla, USA.
| | - Kesong Yang
- Department of NanoEngineering, University of California San Diego, La Jolla, USA.
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Nazir S, Cheng J, Yang K. Creating Two-Dimensional Electron Gas in Nonpolar/Nonpolar Oxide Interface via Polarization Discontinuity: First-Principles Analysis of CaZrO3/SrTiO3 Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2016; 8:390-399. [PMID: 26649746 DOI: 10.1021/acsami.5b09107] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We studied strain-induced polarization and resulting conductivity in the nonpolar/nonpolar CaZrO3/SrTiO3 (CZO/STO) heterostructure (HS) system by means of first-principles electronic structure calculations. By modeling four types of CZO/STO HS-based slab systems, i.e., TiO2/CaO and SrO/ZrO2 interface models with CaO and ZrO2 surface terminations in each model separately, we found that the lattice-mismatch-induced compressive strain leads to a strong polarization in the CZO film and that as the CZO film thickness increases there exists an insulator-to-metal transition. The polarization direction and critical thickness of the CZO film for forming interfacial metallic states depend on the surface termination of CZO film in both types of interface models. In the TiO2/CaO and SrO/ZrO2 interface models with CaO surface termination, the strong polarization drives the charge transfer from the CZO film to the first few TiO2 layers in the STO substrate, leading to the formation of two-dimensional electron gas (2DEG) at the interface. In the HS models with ZrO2 surface termination, two polarization domains with opposite directions are in the CZO film, which results in the charge transfer from the middle CZO layer to the interface and surface, respectively, leading to the coexistence of the 2DEG on the interface and the two-dimensional hole gas (2DHG) at the middle CZO layer. These findings open a new avenue to achieve 2DEG (2DHG) in perovskite-based HS systems via polarization discontinuity.
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Affiliation(s)
- Safdar Nazir
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Jianli Cheng
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Kesong Yang
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
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Wang Y, Tang W, Cheng J, Nazir S, Yang K. High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study. Phys Chem Chem Phys 2016; 18:31924-31929. [DOI: 10.1039/c6cp05572a] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
First-principles electronic structure calculations predict that SrGeO3 and BaSnO3 can be substrate materials for achieving a high-mobility two-dimensional electron gas in perovskite oxide heterostructures.
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Affiliation(s)
- Yaqin Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices
- University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
- Department of NanoEngineering
| | - Wu Tang
- State Key Laboratory of Electronic Thin Films and Integrated Devices
- University of Electronic Science and Technology of China
- Chengdu 610054
- P. R. China
| | - Jianli Cheng
- Department of NanoEngineering
- University of California
- La Jolla
- USA
| | - Safdar Nazir
- Department of NanoEngineering
- University of California
- La Jolla
- USA
| | - Kesong Yang
- Department of NanoEngineering
- University of California
- La Jolla
- USA
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Behtash M, Nazir S, Wang Y, Yang K. Polarization effects on the interfacial conductivity in LaAlO3/SrTiO3heterostructures: a first-principles study. Phys Chem Chem Phys 2016; 18:6831-8. [DOI: 10.1039/c5cp07581e] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
First-principles calculations predict the normalized electron carrier density (μ/μ0), the mobility (m*/m0), and the conductivity (σ/σ0) in LaAlO3/SrTiO3as a function of uniaxial strain.
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Affiliation(s)
- Maziar Behtash
- Department of NanoEngineering
- University of California
- La Jolla
- USA
| | - Safdar Nazir
- Department of NanoEngineering
- University of California
- La Jolla
- USA
| | - Yaqin Wang
- Department of NanoEngineering
- University of California
- La Jolla
- USA
| | - Kesong Yang
- Department of NanoEngineering
- University of California
- La Jolla
- USA
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Nazir S, Cheng J, Behtash M, Luo J, Yang K. Interface Energetics and Charge Carrier Density Amplification by Sn-Doping in LaAlO3/SrTiO3 Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2015; 7:14294-14302. [PMID: 26062403 DOI: 10.1021/acsami.5b02770] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Tailoring the two-dimensional electron gas (2DEG) at the n-type (TiO2)(0)/(LaO)(+1) interface between the polar LaAlO3 (LAO) and nonpolar SrTiO3 (STO) insulators can potentially provide desired functionalities for next-generation low-dimensional nanoelectronic devices. Here, we propose a new approach to tune the electronic and magnetic properties in the n-type LAO/STO heterostructure (HS) system via electron doping. In this work, we modeled four types of layer doped LAO/STO HS systems with Sn dopants at different cation sites and studied their electronic structures and interface energetics by using first-principles electronic structure calculations. We identified the thermodynamic stability conditions for each of the four proposed doped configurations with respect to the undoped LAO/STO interface. We further found that the Sn-doped LAO/STO HS system with Sn at Al site (Sn@Al) is energetically most favorable with respect to decohesion, thereby strengthening the interface, while the doped HS system with Sn at La site (Sn@La) exhibits the lowest interfacial cohesion. Moreover, our results indicate that all the Sn-doped LAO/STO HS systems exhibit the n-type conductivity with the typical 2DEG characteristics except the Sn@La doped HS system, which shows p-type conductivity. In the Sn@Al doped HS model, the Sn dopant exists as a Sn(4+) ion and introduces one additional electron into the HS system, leading to a higher charge carrier density and larger magnetic moment than that of all the other doped HS systems. An enhanced charge confinement of the 2DEG along the c-axis is also found in the Sn@Al doped HS system. We hence suggest that Sn@Al doping can be an effective way to enhance the electrical conduction and magnetic moment of the 2DEG in LAO/STO HS systems in an energetically favorable manner.
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Affiliation(s)
- Safdar Nazir
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Jianli Cheng
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Maziar Behtash
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Jian Luo
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
| | - Kesong Yang
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
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Nazir S, Bernal C, Yang K. Modulated two-dimensional charge-carrier density in LaTiO3-layer-doped LaAlO3/SrTiO3 heterostructure. ACS APPLIED MATERIALS & INTERFACES 2015; 7:5305-5311. [PMID: 25688656 DOI: 10.1021/am508662q] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The highly mobile two-dimensional electron gas (2DEG) formed at the polar/nonpolar LaAlO3/SrTiO3 (LAO/STO) heterostructure (HS) is a matter of great interest because of its potential applications in nanoscale solid-state devices. To realize practical implementation of the 2DEG in device design, desired physical properties such as tuned charge carrier density and mobility are necessary. In this regard, polar perovskite-based transition metal oxides can act as doping layers at the interface and are expected to tune the electronic properties of 2DEG of STO-based HS systems dramatically. Herein, we investigated the doping effects of LaTiO3(LTO) layers on the electronic properties of 2DEG at n-type (LaO)(+1)/(TiO2)(0) interface in the LAO/STO HS using spin-polarized density functional theory calculations. Our results indicate an enhancement of orbital occupation near the Fermi energy, which increases with respect to the number of LTO unit cells, resulting in a higher charge carrier density of 2DEG than that of undoped system. The enhanced charge carrier density is attributed to an extra electron introduced by the Ti 3d(1) orbitals from the LTO dopant unit cells. This conclusion is consistent with the recent experimental findings (Appl. Phys. Lett. 2013, 102, 091601). Detailed charge density and partial density of states analysis suggests that the 2DEG in the LTO-doped HS systems primarily comes from partially occupied dyz and dxz orbitals.
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Affiliation(s)
- Safdar Nazir
- Department of NanoEngineering, University of California, San Diego , 9500 Gilman Drive, Mail Code 0448, La Jolla, California 92093-0448, United States
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Nazir S, Behtash M, Yang K. The role of uniaxial strain in tailoring the interfacial properties of LaAlO3/SrTiO3heterostructure. RSC Adv 2015. [DOI: 10.1039/c4ra15866k] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Applying strains on the substrate is one effective approach to optimize the interfacial electronic properties in SrTiO3-based heterostructures.
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Affiliation(s)
- Safdar Nazir
- Department of NanoEngineering
- University of California San Diego
- USA
| | - Maziar Behtash
- Department of NanoEngineering
- University of California San Diego
- USA
| | - Kesong Yang
- Department of NanoEngineering
- University of California San Diego
- USA
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