1
|
Sato E, Yukiue A, Mitsudo K, Suga S. Anodic Dehydrogenative Aromatization of Tetrahydrocarbazoles Leading to Carbazoles. Org Lett 2023. [PMID: 37428821 DOI: 10.1021/acs.orglett.3c01914] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/12/2023]
Abstract
Anodic oxidation-promoted aromatization of 1,2,3,4-tetrahydrocarbazoles was achieved. Nitrogen-protected tetrahydrocarbazoles could be converted to the corresponding carbazoles with the use of bromide as a mediator. LiBr, an inexpensive bromide source, allowed for efficient transformation in the presence of AcOH.
Collapse
Affiliation(s)
- Eisuke Sato
- Division of Applied Chemistry, Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
| | - Ayaka Yukiue
- Division of Applied Chemistry, Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
| | - Koichi Mitsudo
- Division of Applied Chemistry, Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
| | - Seiji Suga
- Division of Applied Chemistry, Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
| |
Collapse
|
2
|
Guo J, Geng J, Tian G, Ji D, Qi S, Wu D. Zinc Ion Triggered Controllable Binary/Ternary Memory Conversion Behaviors in Polyimides Containing Pendant Porphyrin Group. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2005659. [PMID: 33201592 DOI: 10.1002/smll.202005659] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2020] [Revised: 10/09/2020] [Indexed: 06/11/2023]
Abstract
Compared with typical binary polymeric memory materials, functional polymers with ternary memory performance possess significant potential to achieve ultra-high-density data storage. The reported ternary memory polymers are normally driven by dual-mechanism. However, the involved thermodynamically unstable mechanisms (field-induced conformation change or conductive filament formation/fracture) may result in the poor reliability of memory devices under high-temperature working atmosphere. Another strategy to realize ternary memory is introducing charge trapping/de-trapping mechanism by attaching charge trap atom/group at electron donor, which is proved not always effective. Moreover, the synergistic two mechanisms may have difficulty for clarifying the relationship between memory performance and chemical structures, which is the core issue of polymer memory materials. Besides, some multi-level memory materials need the cooperative participation of artificially setting compliance current, which is the extension of typical binary memory and may cause a more complicated technique and logic circuit. Herein, based on charge-transfer mechanism, a concise and effective strategy to realize ternary memory application is proposed. By inserting a Zn ion, the charge-transfer process occurring in electron donors can lead to the novel electrical tri-stability memory behaviors. This work can provide a novel idea for achieving reliable and intrinsic ternary high-density data storage applications.
Collapse
Affiliation(s)
- Jiacong Guo
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Jianzhao Geng
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Guofeng Tian
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing, 100190, China
| | - Shengli Qi
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
- Changzhou Institute of Advanced Materials, Beijing University of Chemical Technology, Beijing, 213164, China
| | - Dezhen Wu
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
- Changzhou Institute of Advanced Materials, Beijing University of Chemical Technology, Beijing, 213164, China
| |
Collapse
|
3
|
Ree BJ, Isono T, Satoh T. Chemically Controlled Volatile and Nonvolatile Resistive Memory Characteristics of Novel Oxygen-Based Polymers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:28435-28445. [PMID: 32525296 DOI: 10.1021/acsami.0c06939] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent advancements in modern microelectronics continuously increase the data storage capacity of modern devices, but they require delicate and costly fabrication processes. As alternatives to conventional inorganic based semiconductors, semiconducting polymers are of academic and industrial interest for their cost-efficiency, power efficiency, and flexible processability. Here, we have synthesized a series of novel oxygen-based polymers through the postmodification reactions of poly(ethylene-alt-maleate) with various oxybenzyl alcohol derivatives. The oxygen-based polymers are thermally stable up to 180 °C, and their nanoscale film devices exhibit reliable, power efficient p-type unipolar volatile and nonvolatile resistive memory characteristics with high ON/OFF current ratios. Additionally, when given a higher number of oxygen atoms in oxyphenyl side groups, the thin film polymer devices demonstrate a wide operational film thickness range. The memory characteristics depend on the oxyphenyl moieties functioning as charge trap sites, where a combination of Schottky emission and trap-limited space charge limited conductions in OFF-state and hopping conduction in ON-state are observed. This study demonstrates the chemical incorporation of oxyphenyl derivatives into polymer dielectrics as a powerful development tool for p-type resistive memory materials.
Collapse
Affiliation(s)
- Brian J Ree
- Graduate School of Chemical Sciences and Engineering, Hokkaido University, Sapporo 060-8628, Japan
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Takuya Isono
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
| |
Collapse
|
4
|
Gu J, Li X, Zhou G, Liu W, Gao J, Wang Q. A novel self-calibrating strategy for real time monitoring of formaldehyde both in solution and solid phase. JOURNAL OF HAZARDOUS MATERIALS 2020; 386:121883. [PMID: 31881494 DOI: 10.1016/j.jhazmat.2019.121883] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Revised: 11/17/2019] [Accepted: 12/10/2019] [Indexed: 06/10/2023]
Abstract
Formaldehyde (FA) is a chemical substance with tremendously noxious feature for human health and it causes serious damages to living organisms. The recognition of formaldehyde in the form of fluorescent signals has been extensively explored by using a few molecular scaffolds in buffer mediums. In particular, the study for sensing of formaldehyde both in solution and solid state has generated considerable interests. Herein, a new ratiometric fluorescent probe 1-(5-(9-phenyl-9H-carbazol-3-yl)thiophen-2-yl)but-3-en-1-amine (SO-GJP) has been synthesized for selective detection of FA based on aza-Cope reaction. In the presence of FA from 0 to 1.3 mM, the emission band of SO-GJP varies from 393 nm to 542 nm and the detection limit has been calculated to be 1.55 μM. The entrapment of SO-GJP onto the thin layer chromatography (TLC) plate leads to the successful detection of FA with sensitive color change from white to yellow. Moreover, the response mechanism has been explained by FA-induced 2-aza-Cope rearrangement within SO-GJP and the chemical processes are supported by density functional theory, fluorescence and UV-vis spectra. The integration of responsive units based on carbazole platform can serve as one of the powerful strategies by directly converting signals at different circumstances into fluorescence.
Collapse
Affiliation(s)
- Jiapei Gu
- School of Chemistry, South China Normal University, Guangzhou, 510006, PR China
| | - Xiangqian Li
- School of Chemistry, South China Normal University, Guangzhou, 510006, PR China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, PR China
| | - Wanqiang Liu
- School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan, PR China
| | - Jinwei Gao
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, Guangzhou, 510006, PR China
| | - Qianming Wang
- School of Chemistry, South China Normal University, Guangzhou, 510006, PR China; Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, PR China.
| |
Collapse
|
5
|
|
6
|
Abdul Fattah T, Saeed A, Albericio F. Recent advances towards sulfur (VI) fluoride exchange (SuFEx) click chemistry. J Fluor Chem 2018. [DOI: 10.1016/j.jfluchem.2018.07.008] [Citation(s) in RCA: 65] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
|
7
|
Xiao X, Zhou F, Jiang J, Chen H, Wang L, Chen D, Xu Q, Lu J. Highly efficient polymerization via sulfur(vi)-fluoride exchange (SuFEx): novel polysulfates bearing a pyrazoline–naphthylamide conjugated moiety and their electrical memory performance. Polym Chem 2018. [DOI: 10.1039/c7py02042b] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two polysulfates (PolyTPP-NI and CPTPP-NI) were synthesized by a SuFEx click reaction, and their memory devices show Flash behaviors.
Collapse
Affiliation(s)
- Xiong Xiao
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Soochow University
- Suzhou 215123
| | - Feng Zhou
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Soochow University
- Suzhou 215123
| | - Jun Jiang
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Soochow University
- Suzhou 215123
| | - Haifeng Chen
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Soochow University
- Suzhou 215123
| | - Lihua Wang
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Soochow University
- Suzhou 215123
| | - Dongyun Chen
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Soochow University
- Suzhou 215123
| | - Qingfeng Xu
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Soochow University
- Suzhou 215123
| | - Jianmei Lu
- College of Chemistry
- Chemical Engineering and Materials Science
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- Soochow University
- Suzhou 215123
| |
Collapse
|
8
|
Tan H, Yu H, Song Y, Zhu S, Zhang B, Yao H, Guan S. Nonvolatile resistive memory devices based on ferrocene-terminated hyperbranched polyimide derived from different dianhydrides. ACTA ACUST UNITED AC 2017. [DOI: 10.1002/pola.28920] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Haiwei Tan
- Key Laboratory of High Performance Plastics (Jilin University), Ministry of Education, National & Local Joint Engineering Laboratory for Synthesis Technology of High Performance Polymer; Jilin University, Qianjin Street 2699; Changchun 130012 People's Republic of China
| | - Huaxuan Yu
- Key Laboratory of High Performance Plastics (Jilin University), Ministry of Education, National & Local Joint Engineering Laboratory for Synthesis Technology of High Performance Polymer; Jilin University, Qianjin Street 2699; Changchun 130012 People's Republic of China
| | - Ying Song
- School of Materials Science and Engineering; Changchun University of Technology; Changchun 130012 People's Republic of China
| | - Shiyang Zhu
- Key Laboratory of High Performance Plastics (Jilin University), Ministry of Education, National & Local Joint Engineering Laboratory for Synthesis Technology of High Performance Polymer; Jilin University, Qianjin Street 2699; Changchun 130012 People's Republic of China
| | - Bo Zhang
- Key Laboratory of High Performance Plastics (Jilin University), Ministry of Education, National & Local Joint Engineering Laboratory for Synthesis Technology of High Performance Polymer; Jilin University, Qianjin Street 2699; Changchun 130012 People's Republic of China
| | - Hongyan Yao
- Department of Materials Science and Engineering; National University of Singapore; Singapore 117574 Singapore
| | - Shaowei Guan
- Key Laboratory of High Performance Plastics (Jilin University), Ministry of Education, National & Local Joint Engineering Laboratory for Synthesis Technology of High Performance Polymer; Jilin University, Qianjin Street 2699; Changchun 130012 People's Republic of China
| |
Collapse
|
9
|
|
10
|
Jia N, Tian G, Qi S, Cheng J, Wang X, Wu D. Asymmetric isomerization: an efficient strategy to tune the electrical resistive memory behaviors of functional polyimides containing N-phenylcarbazole moieties. RSC Adv 2017. [DOI: 10.1039/c7ra03454g] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023] Open
Abstract
Three isomeric polyimides with exactly the same chemical components and altered spatial configuration possess vastly different memory behaviors.
Collapse
Affiliation(s)
- Nanfang Jia
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Changzhou Institute of Advanced Materials
| | - Guofeng Tian
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Changzhou Institute of Advanced Materials
| | - Shengli Qi
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Changzhou Institute of Advanced Materials
| | - Junhao Cheng
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Changzhou Institute of Advanced Materials
| | - Xiaodong Wang
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Changzhou Institute of Advanced Materials
| | - Dezhen Wu
- State Key Laboratory of Chemical Resource Engineering
- Beijing University of Chemical Technology
- Beijing 100029
- China
- Changzhou Institute of Advanced Materials
| |
Collapse
|