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Du K, Meng Z, Xi Y, Liu N, Zhang J, Xu S, Shi Z, Zhang H, Wang S, Feng H, Hao W, Pan H, Zhang S, Du Y. Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization. ACS APPLIED MATERIALS & INTERFACES 2024; 16:4181-4188. [PMID: 38194269 DOI: 10.1021/acsami.3c15191] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/10/2024]
Abstract
Precise control of charge carrier type and density of two-dimensional (2D) ambipolar semiconductors is the prerequisite for their applications in next-generation integrated circuits and electronic devices. Here, by fabricating a heterointerface between a 2D ambipolar semiconductor (hydrogenated germanene, GeH) and a ferroelectric substrate (PbMg1/3Nb2/3O3-PbTiO3, PMN-PT), fine-tuning of charge carrier type and density of GeH is achieved. Due to ambipolar properties, proper band gap, and high carrier mobility of GeH, by applying the opposite local bias (±8 V), a lateral polarization in GeH is constructed with a change of work function by 0.6 eV. Besides, the built-in polarization in GeH nanoflake could promote the separation of photoexcited electron-hole pairs, which lead to 4 times enhancement of the photoconductivity after poling by 200 V. In addition, a gradient regulation of the work function of GeH from 4.94 to 5.21 eV by adjusting the local substrate polarization is demonstrated, which could be used for data storage at the micrometer size by forming p-n homojunctions. This work of constructing such heterointerfaces provides a pathway for applying 2D ambipolar semiconductors in nonvolatile memory devices, photoelectronic devices, and next-generation integrated circuit.
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Affiliation(s)
- Kunrong Du
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Ziyuan Meng
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Yilian Xi
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Nana Liu
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Jingwei Zhang
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Shengjie Xu
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Zhijian Shi
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Hongrun Zhang
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Shan Wang
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Haifeng Feng
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Weichang Hao
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
| | - Hui Pan
- School of Physics, Beihang University, Beijing 100191, P. R. China
| | - Shujun Zhang
- Institute for Superconducting and Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong 2522, New South Wales, Australia
| | - Yi Du
- School of Physics, Beihang University, Beijing 100191, P. R. China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, P. R. China
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Du C, Ren Y, Qu Z, Gao L, Zhai Y, Han ST, Zhou Y. Synaptic transistors and neuromorphic systems based on carbon nano-materials. NANOSCALE 2021; 13:7498-7522. [PMID: 33928966 DOI: 10.1039/d1nr00148e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.
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Affiliation(s)
- Chunyu Du
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanyun Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zhiyang Qu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Lili Gao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
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Li Q, Zhang Y, Yu Y, Chen Z, Jin L, Li Y, Li T, Yang Y, Zhao H, Li J, Dai H, Yang J, Yao J. Light enhanced low-voltage nonvolatile memory based on all-inorganic perovskite quantum dots. NANOTECHNOLOGY 2019; 30:37LT01. [PMID: 31181548 DOI: 10.1088/1361-6528/ab2809] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Light enhanced low-voltage nonvolatile memory was prepared using all-inorganic perovskite quantum dots (QDs) as a semiconductor layer and Ag nanoparticles (NPs) as a floating gate layer. The photo-induced carriers can be produced in CsPbBr3 QDs under ultraviolet light and trapped in Ag NPs under the action of an external electric field. With the assistance of light, the device exhibited a significantly larger memory window (ΔV th) under low programming and erasing voltages of ±5 V owing to the use of CsPbBr3 QDs. Furthermore, we proved that the ΔV th of the memory strongly depended on the applied bias voltage (V DS) as well as still remaining at 79.3% after 105 s at V DS of 1.4 V. The facile memory provides a new approach to trap a photo-induced charge and reduce operating voltages by combining QDs with metal NPs.
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Affiliation(s)
- Qingyan Li
- Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China
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Zhou L, Mao J, Ren Y, Han ST, Roy VAL, Zhou Y. Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1703126. [PMID: 29377568 DOI: 10.1002/smll.201703126] [Citation(s) in RCA: 47] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2017] [Revised: 11/04/2017] [Indexed: 06/07/2023]
Abstract
Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.
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Affiliation(s)
- Li Zhou
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jingyu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yi Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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Minh Triet N, Thai Duy L, Hwang BU, Hanif A, Siddiqui S, Park KH, Cho CY, Lee NE. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer. ACS APPLIED MATERIALS & INTERFACES 2017; 9:30722-30732. [PMID: 28825301 DOI: 10.1021/acsami.7b06461] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al0.27GaN0.73(∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO2, SO2, and HCHO gases exhibit high sensitivity (0.88-1.88 ppm-1), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.
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Affiliation(s)
| | | | | | | | | | - Kyung-Ho Park
- Device Platform Laboratory, Korea Advanced Nano Fab Center , Suwon, Kyunggi-do 16229, Republic of Korea
| | - Chu-Young Cho
- Device Platform Laboratory, Korea Advanced Nano Fab Center , Suwon, Kyunggi-do 16229, Republic of Korea
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Otari SV, Kumar M, Anwar MZ, Thorat ND, Patel SKS, Lee D, Lee JH, Lee JK, Kang YC, Zhang L. Rapid synthesis and decoration of reduced graphene oxide with gold nanoparticles by thermostable peptides for memory device and photothermal applications. Sci Rep 2017; 7:10980. [PMID: 28887565 PMCID: PMC5591228 DOI: 10.1038/s41598-017-10777-1] [Citation(s) in RCA: 64] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/01/2017] [Accepted: 08/14/2017] [Indexed: 01/09/2023] Open
Abstract
This article presents novel, rapid, and environmentally benign synthesis method for one-step reduction and decoration of graphene oxide with gold nanoparticles (NAuNPs) by using thermostable antimicrobial nisin peptides to form a gold-nanoparticles-reduced graphene oxide (NAu-rGO) nanocomposite. The formed composite material was characterized by UV/Vis spectroscopy, X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, and high-resolution transmission electron microscopy (HR-TEM). HR-TEM analysis revealed the formation of spherical AuNPs of 5-30 nm in size on reduced graphene oxide (rGO) nanosheets. A non-volatile-memory device was prepared based on a solution-processed ZnO thin-film transistor fabricated by inserting the NAu-rGO nanocomposite in the gate dielectric stack as a charge trapping medium. The transfer characteristic of the ZnO thin-film transistor memory device showed large clockwise hysteresis behaviour because of charge carrier trapping in the NAu-rGO nanocomposite. Under positive and negative bias conditions, clear positive and negative threshold voltage shifts occurred, which were attributed to charge carrier trapping and de-trapping in the ZnO/NAu-rGO/SiO2 structure. Also, the photothermal effect of the NAu-rGO nanocomposites on MCF7 breast cancer cells caused inhibition of ~80% cells after irradiation with infrared light (0.5 W cm-2) for 5 min.
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Affiliation(s)
- Sachin V Otari
- Key Laboratory of Biopesticide and Chemical Biology, College of Life Sciences, Fujian Agriculture and Forestry University, Fuzhou, Fujian province, 350002, PR China
- Department of Chemical Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Manoj Kumar
- Department of Mechanical Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Muhammad Zahid Anwar
- Department of Chemical Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Nanasaheb D Thorat
- Materials & Surface Science, Institute Bernal Institute, University of Limerick, Limerick, Ireland
| | - Sanjay K S Patel
- Department of Chemical Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Dongjin Lee
- Department of Mechanical Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Jai Hyo Lee
- Department of Mechanical Engineering, Konkuk University, Seoul, 05029, Republic of Korea
| | - Jung-Kul Lee
- Department of Chemical Engineering, Konkuk University, Seoul, 05029, Republic of Korea.
| | - Yun Chan Kang
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.
| | - Liaoyuan Zhang
- Key Laboratory of Biopesticide and Chemical Biology, College of Life Sciences, Fujian Agriculture and Forestry University, Fuzhou, Fujian province, 350002, PR China.
- Department of Chemical Engineering, Konkuk University, Seoul, 05029, Republic of Korea.
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Barrejón M, Gómez-Escalonilla MJ, Fierro JLG, Prieto P, Carrillo JR, Rodríguez AM, Abellán G, López-Escalante MC, Gabás M, López-Navarrete JT, Langa F. Modulation of the exfoliated graphene work function through cycloaddition of nitrile imines. Phys Chem Chem Phys 2016; 18:29582-29590. [DOI: 10.1039/c6cp05285a] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
1,3-Dipolar cycloaddition between nitrile imines and graphene is studied. The work function of functionalized-graphene depends on the nature of functionalization.
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Affiliation(s)
- Myriam Barrejón
- Universidad de Castilla-La Mancha
- Instituto de Nanociencia, Nanotecnología y Materiales Moleculares (INAMOL)
- Toledo
- Spain
| | - María J. Gómez-Escalonilla
- Universidad de Castilla-La Mancha
- Instituto de Nanociencia, Nanotecnología y Materiales Moleculares (INAMOL)
- Toledo
- Spain
| | | | - Pilar Prieto
- Departamento de Química Orgánica
- Inorgánica y Bioquímica
- Facultad de Ciencias y Tecnologías Químicas
- Universidad de Castilla-La Mancha
- Campus Universitario
| | - José R. Carrillo
- Departamento de Química Orgánica
- Inorgánica y Bioquímica
- Facultad de Ciencias y Tecnologías Químicas
- Universidad de Castilla-La Mancha
- Campus Universitario
| | - Antonio M. Rodríguez
- Departamento de Química Orgánica
- Inorgánica y Bioquímica
- Facultad de Ciencias y Tecnologías Químicas
- Universidad de Castilla-La Mancha
- Campus Universitario
| | - Gonzalo Abellán
- Department of Chemistry and Pharmacy and Institute of Advanced Materials and Processes (ZMP)
- Friedrich Alexander University Erlangen-Nürnberg
- Henkestrasse
- 42
- 91054 Erlangen and Dr.-Mack Strasse 81
| | - Ma Cruz López-Escalante
- Unidad de Nanotecnología - The Nanotech Unit Dpto. Ingeniería Química
- Lab. Materiales & Superficies
- Universidad de Málaga
- 29071 Málaga
- Spain
| | - Mercedes Gabás
- Unidad de Nanotecnología - The Nanotech Unit Dpto. Física Aplicada I
- Lab. Materiales & Superficies
- Universidad de Málaga
- 29071 Málaga
- Spain
| | | | - Fernando Langa
- Universidad de Castilla-La Mancha
- Instituto de Nanociencia, Nanotecnología y Materiales Moleculares (INAMOL)
- Toledo
- Spain
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Han ST, Zhou Y, Chen B, Zhou L, Yan Y, Zhang H, Roy VAL. Two-dimensional molybdenum disulphide nanosheet-covered metal nanoparticle array as a floating gate in multi-functional flash memories. NANOSCALE 2015; 7:17496-17503. [PMID: 26445097 DOI: 10.1039/c5nr05054e] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 10(4) s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.
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Affiliation(s)
- Su-Ting Han
- Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China.
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