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Lasseter J, Gellerup S, Ghosh S, Yun SJ, Vasudevan R, Unocic RR, Olunloyo O, Retterer ST, Xiao K, Randolph SJ, Rack PD. Selected Area Manipulation of MoS 2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9144-9154. [PMID: 38346142 DOI: 10.1021/acsami.3c17182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
We demonstrate direct-write patterning of single and multilayer MoS2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF2 precursor. MoS2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source-drain current at constant gate and source-drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS2 devices.
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Affiliation(s)
- John Lasseter
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Spencer Gellerup
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sujoy Ghosh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Seok Joon Yun
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Rama Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Olugbenga Olunloyo
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Scott T Retterer
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Steven J Randolph
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
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Hwang E, Choi J, Hong S. Emerging laser-assisted vacuum processes for ultra-precision, high-yield manufacturing. NANOSCALE 2022; 14:16065-16076. [PMID: 36278425 DOI: 10.1039/d2nr03649e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Laser technology is a cutting-edge process with a unique photothermal response, precise site selectivity, and remote controllability. Laser technology has recently emerged as a novel tool in the semiconductor, display, and thin film industries by providing additional capabilities to existing high-vacuum equipment. The in situ and in operando laser assistance enables using multiple process environments with a level of complexity unachievable with conventional vacuum equipment. This broadens the usable range of process parameters and directly improves material properties, product precision, and device performance. This review paper examines the recent research trends in laser-assisted vacuum processes (LAVPs) as a vital tool for innovation in next-generation manufacturing processing equipment and addresses the unique characteristics and mechanisms of lasers exclusively used in each study. All the findings suggest that the LAVP can lead to methodological breakthroughs in dry etching, 2D material synthesis, and chemical vapor deposition for optoelectronic devices.
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Affiliation(s)
- Eunseung Hwang
- Department of Mechanical Design Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
- Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 15588, Republic of Korea
| | - Joonmyung Choi
- Department of Mechanical Design Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
- Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 15588, Republic of Korea
| | - Sukjoon Hong
- Department of Mechanical Design Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
- Department of Mechanical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan 15588, Republic of Korea
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Yang X, Song R, He L, Wu L, He X, Liu X, Tang H, Lu X, Ma Z, Tian P. Optimization mechanism and applications of ultrafast laser machining towards highly designable 3D micro/nano structuring. RSC Adv 2022; 12:35227-35241. [DOI: 10.1039/d2ra05148f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Accepted: 11/22/2022] [Indexed: 12/13/2022] Open
Abstract
The optimization mechanism of ultrafast laser machining is introduced. The specific applications of laser processed 3D micro/nano structures in optical, electrochemical and biomedical fields are elaborated, and perspectives are presented.
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Affiliation(s)
- Xiaomeng Yang
- School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
| | - Ruiqi Song
- School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
| | - Liang He
- School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
- Med+X Center for Manufacturing, West China Hospital, Sichuan University, Chengdu 610041, China
| | - Leixin Wu
- School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
| | - Xin He
- School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
| | - Xiaoyu Liu
- School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
| | - Hui Tang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Xiaolong Lu
- School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
| | - Zeyu Ma
- School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
| | - Peng Tian
- School of Mechanical Engineering, Sichuan University, Chengdu 610065, China
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4
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Han Y, Chen S, Ji C, Liu X, Wang Y, Liu J, Li J. Reprogrammable optical metasurfaces by electromechanical reconfiguration. OPTICS EXPRESS 2021; 29:30751-30760. [PMID: 34614795 DOI: 10.1364/ome.438996] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2021] [Accepted: 08/27/2021] [Indexed: 05/25/2023]
Abstract
Metasurfaces, with artificially designed ultrathin and compact optical elements, enable versatile manipulation of the amplitude, phase, and polarization of light waves. While most of the metasurfaces are static and passive, here we propose a reprogrammable metasurface based on the state-of-art electromechanical nano-kirigami, which allows for independent manipulation of pixels at visible wavelengths through mechanical deformation of the nanostructures. By incorporating electrostatic forces between the top suspended gold nano-architectures and bottom silicon substrate, out-of-plane deformation of each pixel and the associated phase retardation are independently controlled by applying single voltage to variable pixels or exerting programmable voltage distribution on identical pixels. As a proof-of-concept demonstration, the metasurfaces are digitally controlled and a series of tunable metasurface holograms such as 3D dynamic display and ultrathin planar lenses are achieved at visible wavelengths. The proposed electromechanical metasurface provides a new methodology to explore versatile reconfigurable and programmable functionalities that may lead to advances in a variety of applications such as hologram, 3D displays, data storage, spatial light modulations, and information processing.
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Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene-Direct-Write Kirigami Patterns. NANOMATERIALS 2019; 9:nano9101394. [PMID: 31574915 PMCID: PMC6835536 DOI: 10.3390/nano9101394] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/12/2019] [Revised: 09/24/2019] [Accepted: 09/27/2019] [Indexed: 12/22/2022]
Abstract
A helium gas field ion source has been demonstrated to be capable of realizing higher milling resolution relative to liquid gallium ion sources. One drawback, however, is that the helium ion mass is prohibitively low for reasonable sputtering rates of bulk materials, requiring a dosage that may lead to significant subsurface damage. Manipulation of suspended graphene is, therefore, a logical application for He+ milling. We demonstrate that competitive ion beam-induced deposition from residual carbonaceous contamination can be thermally mitigated via a pulsed laser-assisted He+ milling. By optimizing pulsed laser power density, frequency, and pulse width, we reduce the carbonaceous byproducts and mill graphene gaps down to sub 10 nm in highly complex kiragami patterns.
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Stanford MG, Mahady K, Lewis BB, Fowlkes JD, Tan S, Livengood R, Magel GA, Moore TM, Rack PD. Laser-Assisted Focused He + Ion Beam Induced Etching with and without XeF 2 Gas Assist. ACS APPLIED MATERIALS & INTERFACES 2016; 8:29155-29162. [PMID: 27700046 DOI: 10.1021/acsami.6b09758] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2 precursor provides a chemical assist for enhanced material removal rate. Finally, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ∼9× relative to the pure He+ sputtering process. These He+ induced nanopatterning techniques improve material removal rate, in comparison to standard He+ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+ probe as a nanopattering tool.
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Affiliation(s)
- Michael G Stanford
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
| | - Kyle Mahady
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
| | - Brett B Lewis
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
| | - Jason D Fowlkes
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Shida Tan
- Intel Corporation , MS: SC9-68, 2200 Mission College Blvd., Santa Clara, California 95054, United States
| | - Richard Livengood
- Intel Corporation , MS: SC9-68, 2200 Mission College Blvd., Santa Clara, California 95054, United States
| | - Gregory A Magel
- Waviks Inc. , 10330 Markison Road, Dallas, Texas 75238, United States
| | - Thomas M Moore
- Waviks Inc. , 10330 Markison Road, Dallas, Texas 75238, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
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Stanford MG, Lewis BB, Iberi V, Fowlkes JD, Tan S, Livengood R, Rack PD. In Situ Mitigation of Subsurface and Peripheral Focused Ion Beam Damage via Simultaneous Pulsed Laser Heating. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:1779-1787. [PMID: 26864147 DOI: 10.1002/smll.201503680] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2015] [Revised: 01/08/2016] [Indexed: 06/05/2023]
Abstract
Focused helium and neon ion (He(+)/Ne(+)) beam processing has recently been used to push resolution limits of direct-write nanoscale synthesis. The ubiquitous insertion of focused He(+)/Ne(+) beams as the next-generation nanofabrication tool-of-choice is currently limited by deleterious subsurface and peripheral damage induced by the energetic ions in the underlying substrate. The in situ mitigation of subsurface damage induced by He(+)/Ne(+) ion exposures in silicon via a synchronized infrared pulsed laser-assisted process is demonstrated. The pulsed laser assist provides highly localized in situ photothermal energy which reduces the implantation and defect concentration by greater than 90%. The laser-assisted exposure process is also shown to reduce peripheral defects in He(+) patterned graphene, which makes this process an attractive candidate for direct-write patterning of 2D materials. These results offer a necessary solution for the applicability of high-resolution direct-write nanoscale material processing via focused ion beams.
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Affiliation(s)
- Michael G Stanford
- Materials Science and Engineering Department, University of Tennessee, Knoxville, TN, 37996, USA
| | - Brett B Lewis
- Materials Science and Engineering Department, University of Tennessee, Knoxville, TN, 37996, USA
| | - Vighter Iberi
- Nanofabrication Research Laboratory, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37381, USA
| | - Jason D Fowlkes
- Materials Science and Engineering Department, University of Tennessee, Knoxville, TN, 37996, USA
- Nanofabrication Research Laboratory, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37381, USA
| | - Shida Tan
- Intel Corporation Santa Clara, MS: SC9-68, 2200 Mission College Blvd, CA, 95054, USA
| | - Rick Livengood
- Intel Corporation Santa Clara, MS: SC9-68, 2200 Mission College Blvd, CA, 95054, USA
| | - Philip D Rack
- Materials Science and Engineering Department, University of Tennessee, Knoxville, TN, 37996, USA
- Nanofabrication Research Laboratory, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37381, USA
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