Decoupling interrelated parameters for designing high performance thermoelectric materials

Principles and Methods for Improving the Thermoelectric Performance of SiC: A Potential High-Temperature Thermoelectric Material

Thermoelectric materials that can convert thermal energy to electrical energy are stable and long-lasting and do not emit greenhouse gases; these properties render them useful in novel power generation devices that can conserve and utilize lost heat. SiC exhibits good mechanical properties, excellent corrosion resistance, high-temperature stability, non-toxicity, and environmental friendliness. It can withstand elevated temperatures and thermal shock and is well suited for thermoelectric conversions in high-temperature and harsh environments, such as supersonic vehicles and rockets. This paper reviews the potential of SiC as a high-temperature thermoelectric and third-generation wide-bandgap semiconductor material. Recent research on SiC thermoelectric materials is reviewed, and the principles and methods for optimizing the thermoelectric properties of SiC are discussed. Thus, this paper may contribute to increasing the application potential of SiC for thermoelectric energy conversion at high temperatures.

Improving Thermoelectric Performance of AgSbTe2 through Suppression of Ag2Te and Band Convergence via Mg and Ti Codoping

In this study, the impact of codoping Mg and Ti on the thermoelectric performance of AgSbTe2 materials was investigated. Through a two-step synthesis process involving slow cooling and spark plasma sintering, AgSb0.98-xMg0.02TixTe2 samples were prepared. The introduction of Mg and Ti dopants effectively suppressed the formation of the undesirable Ag2Te phase. Density functional theory (DFT) calculations confirmed that Ti doping facilitated the band convergence, leading to a reduction in the effective mass of the carriers. This optimization enhanced carrier mobility and, consequently, electrical conductivity. Additionally, the codoping strategy resulted in the reinforcement of point defects, which contributed to a decrease in lattice thermal conductivity. The AgSb0.98-xMg0.02TixTe2 sample achieved a maximum figure of merit (ZT) value of 1.45 at 523 K, representing an 87% improvement over the undoped AgSbTe2 sample. The average ZT value over the temperature range of 323-573 K was 1.09, marking a significant enhancement in thermoelectric performance. This research demonstrates the potential of Mg and Ti codoping as a strategy to improve the thermoelectric properties of AgSbTe2-based materials.

High-Entropy Strategy to Achieve Electronic Band Convergence for High-Performance Thermoelectrics

Multiband convergence has attracted significant interest due to its positive effects on further improving thermoelectric performance. However, the current research mainly focuses on two- or three-band convergence in lead chalcogenides through doping and alloying. Therefore, exploring a new strategy to facilitate more-band convergence has instructive significance and practical value in thermoelectric research. Herein, we first propose a high-entropy strategy to achieve four-band convergence for optimizing thermoelectric performance. Taking high-entropy AgSbPbSnGeTe5 as an example, we found that the emergence of more-band convergence occurs as the configuration entropy increases; in particular, the four-band convergence occurs in high-entropy AgSbPbSnGeTe5. The overlap of multiatom orbitals in the high-entropy sample contributes to the convergence of four valence bands, promoting the improvement of electrical performance. Meanwhile, due to large lattice distortion and disordered atoms, the phonon mean free path is effectively compressed, resulting in low lattice thermal conductivity of high-entropy AgSbPbSnGeTe5. Consequently, AgSbPbSnGeTe5 achieved an intrinsically high ZT value of 1.22 at 673 K, providing a cornerstone for further optimizing thermoelectric performance. For example, by generally optimizing the carrier concentration, a peak ZT value of ∼1.75 at 723 K is achieved. These insights offer a comprehensive understanding of the band structure affected by unique structures of high-entropy materials and also shed useful light on innovation mechanisms and functionalities for future improvement of thermoelectric performance.

Low Thermal Conductivity and High Thermoelectric Performance of Nb-Doped Quarternary Mixed Crystal Nb0.05W0.95-xMox(Se1-xSx)2

Transition-metal dichalcogenide WSe2 has attracted increasing interest due to its large thermopower (S), low-cost, and environment-friendly constituents. However, its thermoelectric figure of merit, ZT, of WSe2 is limited due to its large lattice thermal conductivity (κL) and low electrical conductivity. In view of WSe2 and MoS2 having the same crystal structure, here we designed and prepared Nb-doped quarternary mixed crystal (MC) Nb0.05W0.95-xMox(Se1-xSx)2 (0 ≤ x ≤ 0.095). The results indicate that the κL of the MC can reach as low as 0.12 W m K-1 at 850 K, being 93% smaller than that of WSe2. Our analysis reveals that its low κL originates chiefly from intense scattering of both high-frequency phonons from point defects (mainly alloying elements) and mid/low-frequency phonons from MoS2 inclusions residual within MC. In addition, the alloying of WSe2 with MoS2 causes a 5-fold increase in cation vacancies (VW‴'), leading to a large increase in hole concentration and electrical conductivity, which gives rise to a ∼7.5 times increase in power factor (reaching 4.2 μ W cm-1 K-2 at 850 K). As a result, a record high ZTmax = 0.63 is achieved at 850 K for the MC sample with x = 0.076, which is 20 times larger than that of WSe2, demonstrating that MC Nb0.05W0.95-xMox(Se1-xSx)2 is a promising thermoelectric material.

Enhanced Thermoelectric Performance of Mg-Doped AgSbTe2 by Inhibiting the Formation of Ag2Te

The existence of Ag2Te has always been an obstacle for p-type thermoelectric material AgSbTe2 to improve its thermoelectric performance. In this work, AgSb1-xMgxTe2 samples are synthesized by melting-slow-cooling and then spark plasma sintering (SPS). Through increasing the solubility of Ag2Te in the AgSbTe2 matrix by Mg doping, the formation of Ag2Te is inhibited. Density functional theory calculations confirm more valence bands are involved in electrical transport due to Mg doping. Therefore, the electrical conductivity of AgSb1-xMgxTe2 samples has been greatly improved due to the reduction of Ag2Te with n-type electrical conductivity. Moreover, the downward trend of ZT, which is caused by the structural transition of Ag2Te at about 418 K, disappears. Meanwhile, lattice defects form in the AgSb0.98Mg0.02Te2 sample, and Mg doping improves the configurational entropy change, resulting in a decrease in lattice thermal conductivity over the entire temperature range of measurement. Finally, a high ZT value of 1.31 at 523 K is achieved for the AgSb0.98Mg0.02Te2 sample. This study demonstrates that Mg doping can effectively improve AgSbTe2 thermoelectric performance by inhibiting the formation of the Ag2Te impurity phase.

Thermoelectric Performance Enhancement in Commercial Bi0.5Sb1.5Te3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

Modulated doping has always been a conventional and effective way to optimize thermoelectric (TE) materials. Unfavorably, the efficiency of conventional doping is always restricted by the strong interdependence of thermoelectric parameters. Here, an unconventional grain boundary doping strategy is reported to solve the above problem using commercial p-type Bi_0.5Sb_1.5Te₃ as matrix materials. Decoupling of the three key TE parameters and large net get of the figure of merit (ZT) could be achieved in Bi_0.5Sb_1.5Te₃ materials by introducing the gradient Cu-doped grain boundary. A high ZT of ∼1.40 at 350 K and a superior average ZT of ∼1.24 (300-475 K) are obtained in the as-prepared samples, projecting a maximum conversion efficiency of ∼8.25% at ΔT = 200 K, which are considerably greater than those of the commercial Bi_0.5Sb_1.5Te₃ matrix and the traditional Cu-doped Bi_0.5Sb_1.5Te₃ sample. This study gives deep insights to understand the relationships between the microstructure and the carrier/phonon transport behaviors and promotes a new strategy for improving the thermoelectric performance of commercial p-type Bi_0.5Sb_1.5Te₃ materials.

Researching progress on bio-reactive electrogenic materials with electrophysiological activity for enhanced bone regeneration

Bone tissues are dynamically reconstructed during the entire life cycle phase, which is an exquisitely regulated process controlled by intracellular and intercellular signals transmitted through physicochemical and biochemical stimulation. Recently, the role of electrical activity in promoting bone regeneration has attracted great attention, making the design, fabrication, and selection of bioelectric bio-reactive materials a focus. Under specific conditions, piezoelectric, photoelectric, magnetoelectric, acoustoelectric, and thermoelectric materials can generate bioelectric signals similar to those of natural tissues and stimulate osteogenesis-related signaling pathways to enhance the regeneration of bone defects, which can be used for designing novel smart biological materials for engineering tissue regeneration. However, literature summarizing studies relevant to bioelectric materials for bone regeneration is rare to our knowledge. Consequently, this review is mainly focused on the biological mechanism of electrical stimulation in the regeneration of bone defects, the current state and future prospects of piezoelectric materials, and other bioelectric active materials suitable for bone tissue engineering in recent studies, aiming to provide a theoretical basis for novel clinical treatment strategies for bone defects.

Band Structure Engineering of Bi4O4SeCl2 for Thermoelectric Applications

The mixed anion material Bi₄O₄SeCl₂ has an ultralow thermal conductivity of 0.1 W m^–1 K^–1 along its stacking axis (c axis) at room temperature, which makes it an ideal candidate for electronic band structure optimization via doping to improve its thermoelectric performance. Here, we design and realize an optimal doping strategy for Bi₄O₄SeCl₂ from first principles and predict an enhancement in the density of states at the Fermi level of the material upon Sn and Ge doping. Experimental work realizes the as-predicted behavior in Bi_4–xSn_xO₄SeCl₂ (x = 0.01) through the precise control of composition. Careful consideration of multiple accessible dopant sites and charge states allows for the effective computational screening of dopants for thermoelectric properties in Bi₄O₄SeCl₂ and may be a suitable route for assessing other candidate materials.

Multi-component self-assembled molecular-electronic films: towards new high-performance thermoelectric systems

The thermoelectric properties of parallel arrays of organic molecules on a surface offer the potential for large-area, flexible, solution processed, energy harvesting thin-films, whose room-temperature transport properties are controlled by quantum interference (QI). Recently, it has been demonstrated that constructive QI (CQI) can be translated from single molecules to self-assembled monolayers (SAMs), boosting both electrical conductivities and Seebeck coefficients. However, these CQI-enhanced systems are limited by rigid coupling of the component molecules to metallic electrodes, preventing the introduction of additional layers which would be advantageous for their further development. These rigid couplings also limit our ability to suppress the transport of phonons through these systems, which could act to boost their thermoelectric output, without comprising on their impressive electronic features. Here, through a combined experimental and theoretical study, we show that cross-plane thermoelectricity in SAMs can be enhanced by incorporating extra molecular layers. We utilize a bottom-up approach to assemble multi-component thin-films that combine a rigid, highly conductive 'sticky'-linker, formed from alkynyl-functionalised anthracenes, and a 'slippery'-linker consisting of a functionalized metalloporphyrin. Starting from an anthracene-based SAM, we demonstrate that subsequent addition of either a porphyrin layer or a graphene layer increases the Seebeck coefficient, and addition of both porphyrin and graphene leads to a further boost in their Seebeck coefficients. This demonstration of Seebeck-enhanced multi-component SAMs is the first of its kind and presents a new strategy towards the design of thin-film thermoelectric materials.

Bulk Superlattice Analogues for Energy Conversion

Energy storage and conversion in a clean, efficient, and safe way is the core appeal of a modern sustainable society, which is built on the development of multifunctional materials. Superlattice structures can integrate the advantage of their sublayers while new phenomena may arise from the interface, which play key roles in modern semiconductor technology; however, additional concerns such as stability and yield challenge their large-scale applications in industrial products. In this Perspective we focus our interest on a distinctive category of easily available multilayered inorganic materials that have well-defined subunit structures and can be regarded as bulk superlattice analogues. We illustrate several specific combining forms of subunits in bulk superlattice analogues, including soft/rigid sublayers, electron/phonon transport sublayers, quasi-two-dimensional layers, and intercalated metal layers. We hope to provide insights into material design and broaden the application scope in the field of energy conversion by integrating the versatility of subunits into these bulk superlattice analogues.

Highly Distorted Grain Boundary with an Enhanced Carrier/Phonon Segregation Effect Facilitates High-Performance Thermoelectric Materials

Grain boundary plays an important role in determining the phonon/carrier transport behaviors of thermoelectric (TE) materials, especially for the polycrystalline materials with the average grain size in nanoscale dimensions. Adjusting the grain size and boundaries of TE materials is considered as an effective approach to decouple TE parameters and thereby synergistically optimize the TE performance. Here, the highly distorted grain boundary with an enhanced carrier/phonon segregation effect is introduced to the commercial n-type Bi₂Te_2.7Se_0.3 matrix. The existence of highly distorted grain boundaries can not only enhance the interfacial Seebeck coefficient without significant detriment to the electrical conductivity but also increase the interfacial thermal resistance of grain boundaries, leading to the synergistic reduction of the thermal conductivity. As a result, a peak figure of merit zT_max ≈ 1.22@425 K and an average zT_avg ≈ 1.1(300-500 K) are obtained, which are about 55 and 57% higher than the corresponding values of the commercial Bi₂Te_2.7Se_0.3 matrix, respectively. This work represents a new avenue for improving the commercial Bi₂Te_2.7Se_0.3 TE material, which could further promote the development of the TE technology.

Effect of Side Chain Substituent Volume on Thermoelectric Properties of IDT-Based Conjugated Polymers

A p-type thermoelectric conjugated polymer based on indacenodithiophene and benzothiadiazole is designed and synthesized by replacing normal aliphatic side chains (P1) with conjugated aromatic benzene substituents (P2). The introduced bulky substituent on P2 is detrimental to form the intensified packing of polymers, therefore, it hinders the efficient transporting of the charge carriers, eventually resulting in a lower conductivity compared to that of the polymers bearing aliphatic side chains (P1). These results reveal that the modification of side chains on conjugated polymers is crucial to rationally designed thermoelectric polymers with high performance.

High-Performance Thermoelectric Fabric Based on a Stitched Carbon Nanotube Fiber

With the continuous development of flexible and wearable thermoelectric generators (TEGs), high-performance materials and their integration into convenient wearable devices have to be considered. Herein, we have demonstrated highly aligned wet-spun carbon nanotube (CNT) fibers by optimizing the liquid crystalline (LC) phase via hydrochloric acid purification. The liquid crystalline phase facilitates better alignment of CNTs during fiber extrusion, resulting in the high power factor of 2619 μW m^-1 K^-2, which surpasses those of the dry-spun CNT yarns. A flexible all-carbon TEG was fabricated by stitching a single CNT fiber and doping selected segments into n-type by simple injection doping. The flexible TEG shows the maximum output power densities of 1.9 mW g^-1 and 10.3 mW m^-2 at ΔT = 30 K. Furthermore, the flexible TEG was developed into a prototype watch-strap TEG, demonstrating easy wearability and direct harvesting of body heat into electrical energy. Combining high-performance materials with scalable fabrication methods ensures the great potential for flexible/or wearable TEGs to be utilized as future power-conversion devices.

The impact of electron-phonon coupling on the figure of merit of Nb2SiTe4 and Nb2GeTe4 ternary monolayers

We have comprehensively demonstrated the thermal transport properties of Nb2SiTe4 and Nb2GeTe4 ternary monolayers by employing first-principles calculations and the semi-classical Boltzmann transport theory, including the electron-phonon coupling. The appealing features uncovered here for the monolayers are their colossal Seebeck coefficient and power factor at a higher carrier concentration. For example, the room temperature Seebeck coefficient lasts as high as 200 μV K-1 even at an increased hole (electron) concentration 6.32 × 1020 cm-3 (5.17 × 1019 cm-3) and 1.47 × 1020 cm-3 (5.18 × 1019 cm-3) for Nb2SiTe4 and Nb2GeTe4 monolayers, respectively. Our findings disclose similar band structures and moderate indirect bandgaps of 0.55 eV and 0.41 eV for Nb2SiTe4 and Nb2GeTe4 monolayers. The absence of imaginary frequencies in phonon band dispersion confirms the dynamic stability of both monolayers. The lowest value of lattice thermal conductivity turns out to be 14.30 W m-1 K-1 (12.30 W m-1 K-1) for Nb2SiTe4 and 11.70 W m-1 K-1 (8.34 W m-1 K-1) for Nb2GeTe4 in the x(y) direction. Besides, both monolayers express tremendous potential to further reduced lattice thermal conductivity by nano-structuring without requiring a diminished sample size that is technically challenging to synthesize.

Ultralow thermal conductivity in the quaternary semiconducting chalcogenide Cs4[Ho26Cd7Se48] with an unprecedented closed cavity architecture

A quaternary semiconducting chalcogenide, Cs₄[Ho₂₆Cd₇Se₄₈], with an unprecedented closed cavity architecture exhibits ultralow thermal conductivity.

A new type of novel salt-inclusion chalcogenide with ultralow thermal conductivity

The design and development of novel chalcogenides with ultralow thermal conductivity is extremely important but very challenging for promoting the efficiencies of thermoelectric (TE) materials. Herein, a new type of salt-inclusion chalcogenide (SIC), [Rb6Cl][RE23Mn7Se44] (RE = Ho-Yb), was discovered via a modified flux method. They possessed [RESe6] and [MSe6] (M = RE/Mn) octahedra as basic building units, which interlinked to form a three-dimensional quasi-NaCl-type [RE23Mn7Se44]5- host framework, where the [Rb6Cl]5+ guest ions resided. Interestingly, these isomorphic compounds showed ultralow thermal conductivities (0.28-0.37 W m-1 K-1) at 673 K, which are reported for the first time in SICs. This work not only enriches SIC chemistry but also broadens the application of SICs in the TE field.

Defect Compensation Weakening Induced Mobility Enhancement in Thermoelectric BiTeI by Iodine Deficiency

Carrier mobility (weighted mobility more specifically) of thermoelectrics fundamentally determines its power factor, representing a new cut-in point to optimize the thermoelectric performance. However, researches on enhancing the carrier mobility to improve power factor has been overlooked. In present work, we highlight a significant mobility enhancement in BiTeI by introducing I deficiency, which improves the power factor and final ZT value. A defect compensation weakening mechanism is adopted that the induced I vacancies reduce the concentration of intrinsic I Te • and Te I ' antisite defects, which weakens the donor-acceptor defect compensation and suppresses the defects-induced carrier scattering. As a result, the carrier mobility is obviously enhanced in I-deficient samples, which ensures an effectively improved power factor and final ZT. A maximum ZT of 0.57 is achieved at 570 K perpendicular to the pressing direction, which is superior to pristine BiTeI and among the highest values reported for bulk BiTeI-based thermoelectric materials. Present work opens up a new avenue for thermoelectric optimization mainly by mobility enhancement.

Thermodynamic Routes to Ultralow Thermal Conductivity and High Thermoelectric Performance

Thermoelectric (TE) research is not only a course of materials by discovery but also a seedbed of novel concepts and methodologies. Herein, the focus is on recent advances in three emerging paradigms: entropy engineering, phase-boundary mapping, and liquid-like TE materials in the context of thermodynamic routes. Specifically, entropy engineering is underpinned by the core effects of high-entropy alloys; the extended solubility limit, the tendency to form a high-symmetry crystal structure, severe lattice distortions, and sluggish diffusion processes afford large phase space for performance optimization, high electronic-band degeneracy, rich multiscale microstructures, and low lattice thermal conductivity toward higher-performance TE materials. Entropy engineering is successfully implemented in half-Huesler and IV-VI compounds. In Zintl phases and skutterudites, the efficacy of phase-boundary mapping is demonstrated through unraveling the profound relations among chemical compositions, mutual solubilities of constituent elements, phase instability, microstructures, and resulting TE properties at the operation temperatures. Attention is also given to liquid-like TE materials that exhibit lattice thermal conductivity at lower than the amorphous limit due to intensive mobile ion disorder and reduced vibrational entropy. To conclude, an outlook on the development of next-generation TE materials in line with these thermodynamic routes is given.

The Electronic Transport Channel Protection and Tuning in Real Space to Boost the Thermoelectric Performance of Mg3+δ Sb2-y Bi y near Room Temperature

The optimization of thermoelectric materials involves the decoupling of the transport of electrons and phonons. In this work, an increased Mg₁-Mg₂ distance, together with the carrier conduction network protection, has been shown as an effective strategy to increase the weighted mobility (U = μm^∗3/2) and hence thermoelectric power factor of Mg_3+δSb_2-yBi_y family near room temperature. Mg_3+δSb_0.5Bi_1.5 has a high carrier mobility of 247 cm² V⁻¹ s⁻¹ and a record power factor of 3470 μW m⁻¹ K⁻² at room temperature. Considering both efficiency and power density, Mg_3+δSb_1.0Bi_1.0 with a high average ZT of 1.13 and an average power factor of 3184 μW m⁻¹ K⁻² in the temperature range of 50-250°C would be a strong candidate to replace the conventional n-type thermoelectric material Bi₂Te_2.7Se_0.3. The protection of the transport channel through Mg sublattice means alloying on Sb sublattice has little effect on electron while it significantly reduces phonon thermal conductivity, providing us an approach to decouple electron and phonon transport for better thermoelectric materials.

Manipulation of Band Degeneracy and Lattice Strain for Extraordinary PbTe Thermoelectrics

Maximizing band degeneracy and minimizing phonon relaxation time are proven to be successful for advancing thermoelectrics. Alloying with monotellurides has been known to be an effective approach for converging the valence bands of PbTe for electronic improvements, while the lattice thermal conductivity of the materials remains available room for being further reduced. It is recently revealed that the broadening of phonon dispersion measures the strength of phonon scattering, and lattice dislocations are particularly effective sources for such broadening through lattice strain fluctuations. In this work, a fine control of MnTe and EuTe alloying enables a significant increase in density of electron states near the valence band edge of PbTe due to involvement of multiple transporting bands, while the creation of dense in-grain dislocations leads to an effective broadening in phonon dispersion for reduced phonon lifetime due to the large strain fluctuations of dislocations as confirmed by synchrotron X-ray diffraction. The synergy of both electronic and thermal improvements successfully leads the average thermoelectric figure of merit to be higher than that ever reported for p-type PbTe at working temperatures.

Defects Engineering with Multiple Dimensions in Thermoelectric Materials

Going through decades of development, great progress in both theory and experiment has been achieved in thermoelectric materials. With the growing enhancement in thermoelectric performance, it is also companied with the complexation of defects induced in the materials. 0D point defects, 1D linear defects, 2D planar defects, and 3D bulk defects have all been induced in thermoelectric materials for the optimization of thermoelectric performance. Considering the distinct characteristics of each type of defects, in-depth understanding of their roles in the thermoelectric transport process is of vital importance. In this paper, we classify and summarize the defect-related physical effects on both band structure and transport behavior of carriers and phonons when inducing different types of defects. Recent achievements in experimental characterization and theoretical simulation of defects are also summarized for accurately determining the type of defects serving for the design of thermoelectric materials. Finally, based on the current theoretical and experimental achievements, strategies engaged with multiple dimensional defects are reviewed for thermoelectric performance optimization.

Powering the Hydrogen Economy from Waste Heat: A Review of Heat-to-Hydrogen Concepts

Ever-increasing energy demands and environmental concerns require new and clean energy supplies, many of which are intermittent and do not correlate with demand. To balance supply with demand, a universal energy vector should be employed such that intermittent renewable energy can be stored and transported and then used when needed. Hydrogen is the perfect universal energy vector and a possible solution that ensures environmental cleanliness, maximum utilization of renewable energy sources, and high efficiency, whereby the combustion of the fuel yields only water. One abundant and freely available energy source-both anthropogenic and natural-is heat. Heat can be obtained from industrial processes and is indeed often viewed as a waste product with a premium to remove but is notoriously difficult to capture, store, and transport. Capturing and storing low-grade heat therefore provides a significant opportunity and can be achieved by coupling thermoelectric generators and water electrolyzers. A thermoelectric generator is placed within a thermal energy gradient and produces a flow of current that is fed to the electrolysis unit with which it produces hydrogen and oxygen as the final products. The hydrogen can be stored for long periods and transported for "on-demand" use in fuel cells for electricity from hydrogen burners for a return to thermal energy. This Review summarizes the current state-of-the-art research into implementing thermoelectric generators and utilizing heat as a primary energy source to produce hydrogen, which could replace the need for extra electric power to run hydrogen production units. Furthermore, suitable requirements, modifications, and other related aspects associated with such a new and novel method of hydrogen generation are discussed. Hydrogen produced from otherwise-wasted energy sources can be considered to be green.

Charge Compensation Modulation of the Thermoelectric Properties in AgSbTe2 via Mn Amphoteric Doping

In thermoelectric research, the introduction of a dopant can suppress lattice thermal conductivity (κ₁) through phonon scattering and optimize the power factor (PF) by changing the behavior of carriers, which are the key prerequisites for high thermoelectric performance. However, the electrical thermal conductivity (κ_e) can also increase with the increase of electrical conductivity (σ), which may override the optimization in PF and be detrimental to the improvement of final ZT. In this work, we highlight an amphoteric doping method by using Mn atoms to substitute both Ag and Sb atoms in AgSbTe₂. The Mn_Sb positive doping in p-type AgSbTe₂ can improve the σ through increasing the hole concentration while maintaining a relative high Seebeck coefficient (S), thus substantially improving the PF. On the other hand, the Mn_Ag negative doping can introduce electrons into the matrix, which will recombine with the major hole carriers and lead to a decrease of σ to suppress exorbitant κ_e induced by the Mn_Sb doping. The combination of the both functions by Mn amphoteric doping can further improve the thermoelectric property through charge compensation modulation. By virtue of amphoteric doping, though σ is decreased, PF is further optimized because of increased S, while the total thermal conductivity (κ_total) is further decreased due to suppressed κ_e and additional phonon scattering, which are beneficial for the improvement of the final ZT value. As a result, 5 mol % Mn_Ag-Mn_Sb amphoteric doping AgSbTe₂ sample achieves a maximum ZT value of ∼0.74 at 550 K, which is higher than that of the pristine sample and other Mn monodoped counterparts. The present work suggests charge compensation modulation via amphoteric doping as an effective avenue to simultaneously achieve low thermal conductivity and high power factor for better thermoelectric performance.

Boosting the Adhesivity of π-Conjugated Polymers by Embedding Platinum Acetylides towards High-Performance Thermoelectric Composites

Single-walled carbon nanotubes (SWCNTs) incorporated with π-conjugated polymers, have proven to be an effective approach in the production of advanced thermoelectric composites. However, the studied polymers are mainly limited to scanty conventional conductive polymers, and their performances still remain to be improved. Herein, a new planar moiety of platinum acetylide in the π-conjugated system is introduced to enhance the intermolecular interaction with the SWCNTs via π–π and d–π interactions, which is crucial in regulating the thermoelectric performances of SWCNT-based composites. As expected, SWCNT composites based on the platinum acetylides embedded polymers displayed a higher power factor (130.7 ± 3.8 μW·m⁻¹·K⁻²) at ambient temperature than those without platinum acetylides (59.5 ± 0.7 μW·m⁻¹·K⁻²) under the same conditions. Moreover, the strong interactions between the platinum acetylide-based polymers and the SWCNTs are confirmed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) measurements.

Design of Highly Efficient Thermoelectric Materials: Tailoring Reciprocal-Space Properties by Real-Space Modification

Although restricted by the poor performance at present, thermoelectric materials for power-generation devices and solid-state Peltier coolers still possess unlimited vitality, thus capturing considerable attention. Understanding and manipulating the electrical and thermal transport mechanisms in thermoelectrics play significant roles in tailoring the properties of various thermoelectric materials. The transport behavior of electrons and phonons are closely related to the chemical composition and structure, which are defined in real space. Meanwhile, transport properties are also contingent on the band structure and phonon spectrum, both of which are represented in the reciprocal-space first Brillouin zone. Real space and reciprocal space are bridged by the Fourier transform, and the combination of real-space and reciprocal-space properties will provide more possibilities for regulating transport characteristics. Herein, a compendious discussion of the internal connection between real space and reciprocal space, and the underlying physics and chemistry is presented. Then, how the relationship between real and reciprocal space provides additional insights to govern electrical and thermal transport parameters is elaborated upon, thereby enabling the discovery and optimization of thermoelectric materials. In conclusion, specific challenges and feasible directions are discussed.

Thermoelectric Nanocomposite Foams Using Non-Conducting Polymers with Hybrid 1D and 2D Nanofillers

A facile processing strategy to fabricate thermoelectric (TE) polymer nanocomposite foams with non-conducting polymers is reported in this study. Multilayered networks of graphene nanoplatelets (GnPs) and multi-walled carbon nanotubes (MWCNTs) are deposited on macroporous polyvinylidene fluoride (PVDF) foam templates using a layer-by-layer (LBL) assembly technique. The open cellular structures of foam templates provide a platform to form segregated 3D networks consisting of one-dimensional (1D) and/or two-dimensional (2D) carbon nanoparticles. Hybrid nanostructures of GnP and MWCNT networks synergistically enhance the material system’s electrical conductivity. Furthermore, the polymer foam substrates possess high porosity to provide ultra-low thermal conductivity without compromising the electrical conductivity of the TE nanocomposites. With an extremely low GnP loading (i.e., ~1.5 vol.%), the macroporous PVDF nanocomposites exhibit a thermoelectric figure-of-merit of ~10⁻³. To the best of our knowledge, this ZT value is the highest value reported for organic TE materials using non-conducting polymers and MWCNT/GnP nanofillers. The proposed technique represents an industrially viable approach to fabricate organic TE materials with enhanced energy conversion efficiencies. The current study demonstrates the potential to develop light-weight, low-cost, and flexible TE materials for green energy generation.

Highly robust and flexible n-type thermoelectric film based on Ag2Te nanoshuttle/polyvinylidene fluoride hybrids

Highly robust and flexible n-type thermoelectric (TE) films based on Ag2Te nanoshuttle/polyvinylidene fluoride were prepared by a solution-processable method without a surfactant. A good power performance of over 30 μW (m K2)-1 at room temperature was achieved. Moreover, the synthesized fabrics also exhibited potential for application in flexible electronic devices with negligible performance change after 1000 bending cycles.

Energy Harvesting Research: The Road from Single Source to Multisource

Energy harvesting technology may be considered an ultimate solution to replace batteries and provide a long-term power supply for wireless sensor networks. Looking back into its research history, individual energy harvesters for the conversion of single energy sources into electricity are developed first, followed by hybrid counterparts designed for use with multiple energy sources. Very recently, the concept of a truly multisource energy harvester built from only a single piece of material as the energy conversion component is proposed. This review, from the aspect of materials and device configurations, explains in detail a wide scope to give an overview of energy harvesting research. It covers single-source devices including solar, thermal, kinetic and other types of energy harvesters, hybrid energy harvesting configurations for both single and multiple energy sources and single material, and multisource energy harvesters. It also includes the energy conversion principles of photovoltaic, electromagnetic, piezoelectric, triboelectric, electrostatic, electrostrictive, thermoelectric, pyroelectric, magnetostrictive, and dielectric devices. This is one of the most comprehensive reviews conducted to date, focusing on the entire energy harvesting research scene and providing a guide to seeking deeper and more specific research references and resources from every corner of the scientific community.

Two-Dimensional Oxides: Recent Progress in Nanosheets

Two-dimensional (2D) materials have been widely investigated for the last few years, introducing nanosheets and ultrathin films. The often superior electrical, optical and mechanical properties in contrast to their three-dimensional (3D) bulk counterparts offer a promising field of opportunities. Especially new research fields for already existing and novel applications are opened by downsizing and improving the materials at the same time. Some of the most promising application fields are namely supercapacitors, electrochromic devices, (bio-) chemical sensors, photovoltaic devices, thermoelectrics, (photo-) catalysts and membranes. The role of oxides in this field of materials deserves a closer look due to their availability, durability and further advantages. Here, recent progress in oxidic nanosheets is highlighted and the benefit of 2D oxides for applications discussed in-depth. Therefore, different synthesis techniques and microstructures are compared more closely.

Surfactant mediated synthesis of bismuth selenide thin films for photoelectrochemical solar cell applications

In the present report, nanostructured bismuth selenide (Bi₂Se₃) thin films have been successfully deposited by using arrested precipitation technique (APT) at room temperature. The effect of three different surfactants on the optostructural, morphological, compositional and photoelectrochemical properties of Bi₂Se₃ thin films were investigated. Optical absorption data indicates direct and allowed transition with a band gap energy varied from 1.4 eV to 1.8 eV. The X-ray diffraction pattern (XRD) revealed that Bi₂Se₃ thin films are crystalline in nature and confirmed rhombohedral crystal structure. SEM micrographs shows morphological transition from interconnected mesh to nanospheres like and finally granular morphology. Surface topography of Bi₂Se₃ thin films was determined by AFM. Compositional analysis of all samples was carried out by energy dispersive X-ray spectroscopy (EDS). Finally, all Bi₂Se₃ thin films shows good PEC performance with highest photoconversion efficiency 1.47%. In order to study the stability of Bi₂Se₃ thin films four cycles are repeated after gap of one week each. Further PEC performance of all Bi₂Se₃ thin films are also supported by electrochemical impedance (EIS) measurement study.

Direct Observation of Inherent Atomic-Scale Defect Disorders responsible for High-Performance Ti1-x Hfx NiSn1-y Sby Half-Heusler Thermoelectric Alloys

Structural defects often dominate the electronic- and thermal-transport properties of thermoelectric (TE) materials and are thus a central ingredient for improving their performance. However, understanding the relationship between TE performance and the disordered atomic defects that are generally inherent in nanostructured alloys remains a challenge. Herein, the use of scanning transmission electron microscopy to visualize atomic defects directly is described and disordered atomic-scale defects are demonstrated to be responsible for the enhancement of TE performance in nanostructured Ti_1-x Hf_x NiSn_1-y Sb_y half-Heusler alloys. The disordered defects at all atomic sites induce a local composition fluctuation, effectively scattering phonons and improving the power factor. It is observed that the Ni interstitial and Ti,Hf/Sn antisite defects are collectively formed, leading to significant atomic disorder that causes the additional reduction of lattice thermal conductivity. The Ti_1-x Hf_x NiSn_1-y Sb_y alloys containing inherent atomic-scale defect disorders are produced in one hour by a newly developed process of temperature-regulated rapid solidification followed by sintering. The collective atomic-scale defect disorder improves the zT to 1.09 ± 0.12 at 800 K for the Ti_0.5 Hf_0.5 NiSn_0.98 Sb_0.02 alloy. These results provide a promising avenue for improving the TE performance of state-of-the-art materials.

Controllable Electrical Contact Resistance between Cu and Oriented-Bi2Te3 Film via Interface Tuning

The contact resistance between metals and semiconductors has become critical for the design of thin-film thermoelectric devices with their continuous miniaturization. Herein, we report a novel interface tuning method to regulate the contact resistance at the Bi₂Te₃-Cu interface, and three Bi₂Te₃ films with different oriented microstructures are obtained. The lowest contact resistivity (∼10^-7 Ω cm²) is observed between highly (00l) oriented Bi₂Te₃ and Cu film, nearly an order of magnitude lower than other orientations. This significant decrease of contact resistivity is attributed to the denser film connections, lower lattice misfit, larger effective conducting contact area, and smaller width of the surface depletion region. Meanwhile, our results show that the reduction of contact resistance has little dependence on the interfacial diffusion based on the little change in contact resistivity after the introduction of an effective Ti barrier layer. Our work provides a new idea for the mitigation of contact resistivity in thin-film thermoelectric devices and also gives certain guidance for the size design of the next-level miniaturized devices.

Multi-Scale Microstructural Thermoelectric Materials: Transport Behavior, Non-Equilibrium Preparation, and Applications

Considering only about one third of the world's energy consumption is effectively utilized for functional uses, and the remaining is dissipated as waste heat, thermoelectric (TE) materials, which offer a direct and clean thermal-to-electric conversion pathway, have generated a tremendous worldwide interest. The last two decades have witnessed a remarkable development in TE materials. This Review summarizes the efforts devoted to the study of non-equilibrium synthesis of TE materials with multi-scale structures, their transport behavior, and areas of applications. Studies that work towards the ultimate goal of developing highly efficient TE materials possessing multi-scale architectures are highlighted, encompassing the optimization of TE performance via engineering the structures with different dimensional aspects spanning from the atomic and molecular scales, to nanometer sizes, and to the mesoscale. In consideration of the practical applications of high-performance TE materials, the non-equilibrium approaches offer a fast and controllable fabrication of multi-scale microstructures, and their scale up to industrial-size manufacturing is emphasized here. Finally, the design of two integrated power generating TE systems are described-a solar thermoelectric-photovoltaic hybrid system and a vehicle waste heat harvesting system-that represent perhaps the most important applications of thermoelectricity in the energy conversion area.

Two impurity energy level regulation leads to enhanced thermoelectric performance of Ag1−xCdxIn5Se8

AgIn₅Se₈ is a promising thermoelectric material due to its low thermal conductivity. By incorporating Cd²⁺ ions at Ag⁺ lattice sites; the electron concentration is increased, resulting in greatly enhanced electrical conductivity, and a high thermoelectric power factor.

Syntheses, structures, and thermoelectric properties of ternary tellurides: RECuTe2 (RE = Tb–Er)

Four new compounds with the general formula RECuTe₂ and the influence of the electronegativity of rare-earth metals on thermoelectric properties are reported for the first time.

High thermoelectric performance of polycrystalline In4Se3−δ(CuI)x: synergistic effects of the Se-deficiency and CuI-doping

Synergistic effect of Se-deficiency and CuI-doping significantly enhances the thermoelectric figure-of-merit of the n-type polycrystalline In₄Se₃-based materials via improving the power factor. With In₄Se_2.95(CuI)_0.01, ZT = 1.34 at 723 K, the highest value obtained for Pb-free polycrystalline In₄Se₃-based materials to date.

Reduction of thermal conductivity through nanostructuring enhances the thermoelectric figure of merit in Ge1−xBixTe

Nano/meso-structuring reduces the thermal conductivity in Ge_1−xBi_xTe samples, which results in a thermoelectric figure of merit, zT, of 1.3 in Ge_1−xBi_xTe.

A combined experimental and theoretical study of the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2

The recent discovery of non-saturating giant positive magnetoresistance has aroused much interest in Td-WTe(2). We have investigated structural, electronic and vibrational properties of bulk and few-layer Td-WTe(2) experimentally and theoretically. Spin-orbit coupling is found to govern the semi-metallic character of Td-WTe(2) and its structural link with the metallic 1 T form provides an understanding of its structural stability. There is a metal-to-insulator switch-over in the electrical conductivity and a change in the sign of the Seebeck coefficient around 373 K. Lattice vibrations of Td-WTe(2) have been analyzed using first-principles calculations. Out of the 33 possible zone-center Raman active modes, five distinct Raman bands are observed around 112, 118, 134, 165 and 212 cm(-1) in bulk Td-WTe(2). Based on symmetry analysis and calculated Raman tensors, we assign the intense bands at 165 cm(-1) and 212 cm(-1) to the A'(1)and A''(1) modes, respectively. Most of the Raman bands stiffen with decreasing thickness, and the ratio of the integrated intensities of the A''(1) to A'(1) bands decreases in the few-layer sample, while all the bands soften in both the bulk and few-layer samples with increasing temperature.

The Hydric Effect in Inorganic Nanomaterials for Nanoelectronics and Energy Applications

Protons, as one of the world's smallest ions, are able to trigger the charge effect without obvious lattice expansion inside inorganic materials, offering a unique and important test-bed for controlling their diverse functionalities. Arising from the high chemical reactivity of hydrogen (easily losing an electron) with various main group anions (easily accepting a proton), the hydric effect provides a convenient and environmentally benign route to bring about fascinating new physicochemical properties, as well as to create new inorganic structures based on the "old lattice" without dramatically destroying the pristine structure, covering most inorganic materials. Moreover, hydrogen atoms tend to bond with anions or to produce intrinsic defects, both of which are expected to inject extra electrons into lattice framework, promising advances in control of bandgap, spin behavior, and carrier concentration, which determine functionality for wide applications. In this review article, recently developed effective hydric strategies are highlighted, which include the conventional hydric reaction under high temperature or room temperature, proton irradiation or hydrogen plasma treatment, and gate-electrolyte-driven adsorption or doping. The diverse physicochemical properties brought by the hydric effect via modulation of the intrinsic electronic structure are also summarized, finding wide applications in nanoelectronics, energy applications, and catalysis.

Inhomogenous doping induced the imperfect self-assembly of nanocrystals for the synthesis of porous AgPb10BiTe12 nanosheets and their thermoelectric transport properties

For the first time, quaternary single-crystal-like porous AgPb10BiTe12 nanosheets in two solid forms (solid solution and a Bi-rich region coexist) were achieved. A significant enhancement of thermoelectric performance was realized through nanoscale grain boundaries and macroscale porous structures.

Dual Vacancies: An Effective Strategy Realizing Synergistic Optimization of Thermoelectric Property in BiCuSeO

Vacancy is a very important class of phonon scattering center to reduce thermal conductivity for the development of high efficient thermoelectric materials. However, conventional monovacancy may also act as an electron or hole acceptor, thereby modifying the electrical transport properties and even worsening the thermoelectric performance. This issue urges us to create new types of vacancies that scatter phonons effectively while not deteriorating the electrical transport. Herein, taking BiCuSeO as an example, we first reported the successful synergistic optimization of electrical and thermal parameters through Bi/Cu dual vacancies. As expected, as compared to its pristine and monovacancy samples, these dual vacancies further increase the phonon scattering, which results in an ultra low thermal conductivity of 0.37 W m(-1) K(-1) at 750 K. Most importantly, the clear-cut evidence in positron annihilation unambiguously confirms the interlayer charge transfer between these Bi/Cu dual vacancies, which results in the significant increase of electrical conductivity with relatively high Seebeck coefficient. As a result, BiCuSeO with Bi/Cu dual vacancies shows a high ZT value of 0.84 at 750 K, which is superior to that of its native sample and monovacancies-dominant counterparts. These findings undoubtedly elucidate a new strategy and direction for rational design of high performance thermoelectric materials.

Temperature driven p–n–p type conduction switching materials: current trends and future directions

In the present perspective, we highlight the key concepts, present the current fundamental understanding and show the latest developments in the field of p–n–p type conduction switching materials. Near room temperature p–n–p type conduction switching can have potential applications in diodes or transistor devices that operate reversibly upon temperature or voltage change.