Structures and Electronic States of Permethyloligosilane Radical Ions with All-Trans Form Sin(CH3)2n+2± (n = 2−6): A Density Functional Theory Study

Five Stereoactive Orbitals on Silicon: Charge and Spin Localization in the n-Si4Me10(-•) Radical Anion by Trigonal Bipyramidalization

RIUMP2/def2-TZVPPD calculations show that in addition to its usual conformation with charge and spin delocalized over the Si backbone, the isolated Si4Me10(-•) radical anion also has isomeric conformations with localized charge and spin. A structure with localization on a terminal Si atom has been examined in detail. In vacuum, it is calculated to lie 11.5 kcal/mol higher in energy than the charge-and-spin delocalized conformation, and in water the difference is as little as 1.6 kcal/mol. According to natural orbital and localized orbital analyses, the charge-and-spin-carrying terminal Si atom uses five stereoactive hybrid orbitals in a trigonal bipyramidal geometry. Four are built mostly from 3s and 3p atomic orbitals (AOs) and are used to attach a Si3(CH3)7 and three CH3 groups, whereas the larger equatorial fifth orbital is constructed from 4s and 4p AOs and acts as a nonbonding (radical) hybrid orbital with an occupancy of about 0.65 e.

Mechanism of Electron and Hole Localization in Poly(dimethylsilane) Radical Ions

The mechanism of excess electron and hole localizations in radical ions of poly(dimethylsilane) (PDMS) has been investigated by means of molecular dynamics (MD) and extended Hückel methods. Oligo(dimethylsilane) composed of 100 monomer units of dimethylsilane, CH3(Si(CH3)2)(n)CH3 (n = 100), were used as a model of PDMS. Both wings of the oligomer were capped by a methyl group. First, the geometry of PDMS with a regular all-trans form was fully optimized by MM2+ energy gradient method. Next, the MD calculation was carried out for PDMS at 300 K. The structure of PDMS was gradually deformed as a function of simulation time, especially the dihedral angle of Si-Si-Si-Si backbone that was randomized. At time zero when the structure has the regular all-trans form, both the excess electron and hole were completely delocalized on the Si backbone of PDMS. After thermal activation, the localization of the electron and hole was found. The mechanism of the localization was discussed on the basis of theoretical results.