Synthesis of Titanium(IV) Guanidinate Complexes and the Formation of Titanium Carbonitride via Low-Pressure Chemical Vapor Deposition

Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

Ethyl and amide zinc thioureides [L1ZnEt]2 (1), [L1*ZnEt]2 (2) and [L1Zn(N(SiMe3)2)]2 (3) have been synthesised from the equimolar reaction of thiourea ligands (HL1 = iPrN(H)CSNMe2 and HL1* = PhN(H)CSNMe2) with diethyl zinc and zinc bis[bis(trimethylsilyl)amide] respectively. New routes towards heteroleptic complexes have been investigated through reactions of 1, 2 and 3 with β-ketoiminates (HL2 = [(Me)CN(H){iPr}-CHC(Me)[double bond, length as m-dash]O]), bulky aryl substituted β-diiminates (HL3 = [(Me)CN(H){Dipp}-CHC(Me)[double bond, length as m-dash]N{Dipp}] (Dipp = diisopropylphenyl) and HL3* = [(Me)CN(H){Dep}-CHC(Me)[double bond, length as m-dash]N{Dep}] (Dep = diethylphenyl)) and donor-functionalised alcohols (HL4 = Et2N(CH2)3OH and HL4* = Me2N(CH2)3OH) and have led to the formation of the heteroleptic complexes [L1*ZnL3*] (5), [L1ZnL4]2 (6), [L1ZnL4*]2 (7), [L1*ZnL4] (8) and [L1*ZnL4*] (9). All complexes have been characterised by 1H and 13C NMR, elemental analysis, and the X-ray structures of HL1*, 1, 2, 6 and 7 have been determined via single crystal X-ray diffraction. Variable temperature 1H, COSY and NOESY NMR experiments investigating the dynamic behaviour of 5, 6 and 7 have shown these molecules to be fluxional. On the basis of solution state fluxionality and thermogravimetric analysis (TGA), alkoxyzinc thioureides 6 and 7 were investigated as single-source precursors for the deposition of the ternary material zinc oxysulfide, Zn(O,S), a buffer layer used in thin film photovoltaic devices. The aerosol-assisted chemical vapour deposition (AACVD) reaction of 7 at 400 °C led to the deposition of the heterodichalcogenide material Zn(O,S), which was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDX), with optical properties investigated using UV/vis spectroscopy, and surface morphology and film thickness examined using scanning electron microscopy (SEM).

Synthesis and Characterization of Tungsten Nitrido Amido Guanidinato Complexes as Precursors for Chemical Vapor Deposition of WNxCy Thin Films

Tungsten nitrido amido guanidinato complexes of the type WN(NR₂)[(NR')₂C(NR₂)]₂ (R = Me, Et_; R' = ⁱ Pr, Cy) were synthesized as precursors for aerosol-assisted chemical vapor deposition (AACVD) of WN_xC_y thin films. The reaction of tungsten nitrido amido complexes of the type WN(NR₂)₃ (R = Me, Et) with two equivalents of a carbodiimide R'N=C=NR' (R' = ⁱ Pr, Cy) resulted in two insertions of a carbodiimide into W-N(amido) bonds, affording bis(guanidinato) amido nitrido tungsten complexes. These compounds were characterized by ¹⁴N NMR, indicating distinctive chemical shifts for each type of N-bound ligand. Crystallographic structure determination of WN(NMe₂)[(N ⁱ Pr)₂C(NMe₂)]₂ showed the guanidinato ligands to be non-equivalent. The complex WN(NMe₂)[(N ⁱ Pr)₂C(NMe₂)]₂ was demonstrated to serve as a precursor for AACVD of WN_xC_y thin films, resulting in featureless, X-ray amorphous thin films for growth temperatures 200 - 400 °C.

Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films

Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD).

Di-μ-chlorido-bis{bis[N,N-bis(trimethylsilyl)amido]titanium(III)}

The molecular structure of the title compound, [Ti2Cl2(C6H18NSi2)4], shows a binuclear motif of TiIIIatoms, formulated as [Ti(μ-Cl)(N(SiMe3)2)2]2, with two μ-Cl atoms bridging two ((Me3Si)2N)2Ti moieties. The coordination environment of both central TiIIIatoms is distorted tetrahedral, with a nearly planar four-membered Ti2Cl2core [Ti—Cl—Ti—Cl = 2.796 (15)°].

Synthesis of Ti, Zr, and Hf complexes with a new tetra-azane ligand by one-pot HCl-elimination and their properties as catalysts for production of UHMWPE

The first example for the HCl-elimination reaction being applied in the attachment of an amido-containing ligand to Zr and Hf.

Guanidinatoaluminum complexes: synthesis, crystal structures and reactivities

The reactivities of the mononuclear guanidinatoaluminum complexes with O₂, carbodiimide or H₂O were studied for the first time.

Recent Advances Using Guanidinate Ligands for Chemical Vapour Deposition (CVD) and Atomic Layer Deposition (ALD) Applications

Volatile metal complexes are important for chemical vapour deposition (CVD) and atomic layer deposition (ALD) to deliver metal components to growing thin films. Compounds that are thermally stable enough to volatilize but that can also react with a specific substrate are uncommon and remain unknown for many metal centres. Guanidinate ligands, as discussed in this review, have proven their utility for CVD and ALD precursors for a broad range of metal centres. Guanidinate complexes have been used to deposit metal oxides, metal nitrides and pure metal films by tuning process parameters. Our review highlights use of guanidinate ligands for CVD and ALD of thin films over the past five years, design trends for precursors, promising precursor candidates and discusses the future outlook of these ligands.

Catalytic Addition of Amine NH Bonds to Carbodiimides by Half-Sandwich Rare-Earth Metal Complexes: Efficient Synthesis of Substituted Guanidines through Amine Protonolysis of Rare-Earth Metal Guanidinates

Reaction of [Ln(CH(2)SiMe(3))(3)(thf)(2)] (Ln=Y, Yb, and Lu) with one equivalent of Me(2)Si(C(5)Me(4)H)NHR' (R'=Ph, 2,4,6-Me(3)C(6)H(2), tBu) affords straightforwardly the corresponding half-sandwich rare-earth metal alkyl complexes [{Me(2)Si(C(5)Me(4))(NR')}Ln(CH(2)SiMe(3))(thf)(n)] (1: Ln = Y, R' = Ph, n=2; 2: Ln = Y, R' = C(6)H(2)Me(3)-2,4,6, n=1; 3: Ln = Y, R' = tBu, n=1; 4: Ln = Yb, R' = Ph, n=2; 5: Ln = Lu, R' = Ph, n=2) in high yields. These complexes, especially the yttrium complexes 1-3, serve as excellent catalyst precursors for the catalytic addition of various primary and secondary amines to carbodiimides, efficiently yielding a series of guanidine derivatives with a wide range of substituents on the nitrogen atoms. Functional groups such as C[triple chemical bond]N, C[triple chemical bond]CH, and aromatic C--X (X: F, Cl, Br, I) bonds can survive the catalytic reaction conditions. A primary amino group can be distinguished from a secondary one by the catalyst system, and therefore, the reaction of 1,2,3,4-tetrahydro-5-aminoisoquinoline with iPrN==C==NiPr can be achieved stepwise first at the primary amino group to selectively give the monoguanidine 38, and then at the cyclic secondary amino unit to give the biguanidine 39. Some key reaction intermediates or true catalyst species, such as the amido complexes [{Me(2)Si(C(5)Me(4))(NPh)}Y(NEt(2))(thf)(2)] (40) and [{Me(2)Si(C(5)Me(4))(NPh)}Y(NHC(6)H(4)Br-4)(thf)(2)] (42), and the guanidinate complexes [{Me(2)Si(C(5)Me(4))(NPh)}Y{iPrNC(NEt(2))(NiPr)}(thf)] (41) and [{Me(2)Si(C(5)Me(4))(NPh)}Y{iPrN}C(NC(6)H(4)Br-4)(NHiPr)}(thf)] (44) have been isolated and structurally characterized. Reactivity studies on these complexes suggest that the present catalytic formation of a guanidine compound proceeds mechanistically through nucleophilic addition of an amido species, formed by acid-base reaction between a rare-earth metal alkyl bond and an amine N--H bond, to a carbodiimide, followed by amine protonolysis of the resultant guanidinate species.

Synthesis and characterisation of zirconium–amido guanidinato complex: a potential precursor for ZrO2thin films

A new zirconium complex, bis-(ethylmethylamido)-bis-(N,N'-diisopropyl-2-ethylmethylamidoguanidinato)-zirconium(iv) {[(N(i)Pr)(2)C(NEtMe)](2)Zr(NEtMe)(2)}, was synthesised by partial replacement of amide ligands with bidentate guanidinate ligands. The monomeric Zr complex was characterised by (1)H-NMR, (13)C-NMR, EI-MS, elemental analysis, and single crystal X-ray diffraction studies. The thermal properties of the compound was studied by thermogravimetric and differential thermal analysis (TG/DTA). The new Zr compound is thermally stable and can be sublimed quantitatively which renders it promising for thin film growth using vapor deposition techniques like chemical vapor deposition (CVD) and atomic layer deposition (ALD). The use of this complex for CVD of ZrO(2) on Si(100) substrates was attempted in combination with oxygen as the oxidant. Stoichiometric ZrO(2) films with preferred orientation at lower growth temperatures was obtained and the films were almost carbon free. The preliminary electrical characterisation of ZrO(2) films showed encouraging results for possible applications in dielectric oxide structures.

Design of precursors for the CVD of inorganic thin films

Applications of inorganic thin films in the electronics industry have spurred activity in the area of chemical vapor deposition (CVD). This article discusses the increasingly sophisticated design strategies for precursor complexes through a series of case studies on CVD of metal oxide and metal nitride films.