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Zhang X, Jiang D, Han Y, Gao Y. Effects of high pressure on the lattice structure and electrical transport properties of BiOI. Phys Chem Chem Phys 2023; 25:6288-6294. [PMID: 36762578 DOI: 10.1039/d2cp05231h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/11/2023]
Abstract
To reveal the pressure effects on BiOX semiconductors, we performed in-situ Raman spectroscopy and electrical transport measurements on BiOI up to 26.1 GPa and 19.2 GPa. BiOI showed good structural stability, while the electron conduction characteristics maintained dominance throughout the pressure range. The influence of grain boundary conduction disappeared at pressures above 9.2 GPa. With pressure elevation, the pressure-induced lattice fragmentation and grain refinement introduced a large number of relevant levels in the energy gap and resulted in a significant increase in the conductivity of BiOI under compression. The conductivity increased by 106 at 19.2 GPa from the initial value and maintained an increase of 102 after depressurization until ambient conditions were attained. At the same time, the space charge polarization of the crystal interface layer became weaker with pressure elevation resulting in a decrease in the relative permittivity of BiOI. The calculation results of the complex permittivity showed that the frequency of orientation polarization response decreases with pressure elevation, and the complex permittivity becomes constant in the high-frequency region. Our work proves that pressure could significantly increase the carrier concentration and mobility, thus effectively improving the conductivity of BiOX semiconductors.
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Affiliation(s)
- Xiaotong Zhang
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
| | - Dawei Jiang
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
| | - Yonghao Han
- State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
| | - Yang Gao
- Center for High Pressure Science and Technology Advanced Research, Beijing 10094, China. .,Shanghai Institute of Laser Plasma, Shanghai 200000, China
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Jia Y, Shang N, He X, Nsabimana A, Gao Y, Ju J, Yang X, Zhang Y. Electrocatalytically active cuprous oxide nanocubes anchored onto macroporous carbon composite for hydrazine detection. J Colloid Interface Sci 2022; 606:1239-1248. [PMID: 34492462 DOI: 10.1016/j.jcis.2021.08.154] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Revised: 08/23/2021] [Accepted: 08/24/2021] [Indexed: 01/24/2023]
Abstract
Cuprous oxide (Cu2O) is a p-type semiconductor with excellent catalytic activity and stability that has gained much attention because it is non-toxic, abundant, and inexpensive. Porous carbon materials have large specific surface areas, which offer abundant electroactive sites, enhance the electrical conductivity of materials, and prevent the aggregation of Cu2O nanocubes. In this study, a composite with high electrocatalytic activity was prepared based on Cu2O nanocubes anchored onto three-dimensional macroporous carbon (MPC) by a simple, eco-friendly, and cheap method for hydrazine detection. Due to the synergistic effect of MPC and Cu2O, the sensor exhibited high electrocatalytic activity, sensitivity, better selectivity, and low limit of detection. The resulting sensor could be a sensitive and effective platform for detecting hydrazine and promising practical applications.
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Affiliation(s)
- Yanan Jia
- Key Laboratory of Medicinal Chemistry and Molecular Diagnosis of the Ministry of Education, Key Laboratory of Analytical Science and Technology of Hebei Province, College of Chemistry and Environmental Science, Institute of Life Science and Green Development, Hebei University, Baoding 071002, PR China
| | - Ningzhao Shang
- College of Science, Hebei Agricultural University, Baoding 071001, PR China
| | - Xiaobo He
- Key Laboratory of Medicinal Chemistry and Molecular Diagnosis of the Ministry of Education, Key Laboratory of Analytical Science and Technology of Hebei Province, College of Chemistry and Environmental Science, Institute of Life Science and Green Development, Hebei University, Baoding 071002, PR China
| | - Anaclet Nsabimana
- Chemistry Department, College of Science and Technology, University of Rwanda, Po Box: 3900, Kigali, Rwanda
| | - Yongjun Gao
- Key Laboratory of Medicinal Chemistry and Molecular Diagnosis of the Ministry of Education, Key Laboratory of Analytical Science and Technology of Hebei Province, College of Chemistry and Environmental Science, Institute of Life Science and Green Development, Hebei University, Baoding 071002, PR China
| | - Jian Ju
- Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou, Zhejiang 325000, China
| | - Xinjian Yang
- Key Laboratory of Medicinal Chemistry and Molecular Diagnosis of the Ministry of Education, Key Laboratory of Analytical Science and Technology of Hebei Province, College of Chemistry and Environmental Science, Institute of Life Science and Green Development, Hebei University, Baoding 071002, PR China
| | - Yufan Zhang
- Key Laboratory of Medicinal Chemistry and Molecular Diagnosis of the Ministry of Education, Key Laboratory of Analytical Science and Technology of Hebei Province, College of Chemistry and Environmental Science, Institute of Life Science and Green Development, Hebei University, Baoding 071002, PR China.
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Ou T, Yan J, Xiao C, Shen W, Liu C, Liu X, Han Y, Ma Y, Gao C. Visible light response, electrical transport, and amorphization in compressed organolead iodine perovskites. NANOSCALE 2016; 8:11426-11431. [PMID: 26880393 DOI: 10.1039/c5nr07842c] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Recent scientific advances on organic-inorganic hybrid perovskites are mainly focused on the improvement of power conversion efficiency. So far, how compression tunes their electronic and structural properties remains less understood. By combining in situ photocurrent, impedance spectroscopy, and X-ray diffraction (XRD) measurements, we have studied the electrical transport and structural properties of compressed CH3NH3PbI3 (MAPbI3) nanorods. The visible light response of MAPbI3 remains robust below 3 GPa while it is suppressed when it becomes amorphous. Pressure-induced electrical transport properties of MAPbI3 including resistance, relaxation frequency, and relative permittivity have been investigated under pressure up to 8.5 GPa by in situ impedance spectroscopy measurements. These results indicate that the discontinuous changes of these physical parameters occur around the structural phase transition pressure. The XRD studies of MAPbI3 under high pressure up to 20.9 GPa show that a phase transformation below 0.7 GPa, could be attributed to the tilting and distortion of PbI6 octahedra. And pressure-induced amorphization is reversible at a low density amorphous state but irreversible at a relatively higher density state. Furthermore, the MAPbI3 nanorods crush into nanopieces around 0.9 GPa which helps us to explain why the mixed phase of tetragonal and orthorhombic was observed at 0.5 GPa. The pressure modulated changes of electrical transport and visible light response properties open up a new approach for exploring CH3NH3PbI3-based photo-electronic applications.
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Affiliation(s)
- Tianji Ou
- State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
| | - Jiejuan Yan
- State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
| | - Chuanhai Xiao
- State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
| | - Wenshu Shen
- State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
| | - Cailong Liu
- State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
| | - Xizhe Liu
- State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
| | - Yonghao Han
- State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
| | - Yanzhang Ma
- Department of Mechanical Engineering, Texas Tech University, Lubbock, Texas 79409, USA
| | - Chunxiao Gao
- State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China.
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Wang J, Wu B, Zhang G, Tian L, Gu G, Gao C. Pressure induced semiconductor–metal phase transition in GaAs: experimental and theoretical approaches. RSC Adv 2016. [DOI: 10.1039/c5ra25013g] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
GaAs undergoes a semiconductor–metal transition, which was investigated by in situ electrical measurements and first-principles calculations under a high pressure.
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Affiliation(s)
- Jia Wang
- Department of Physics
- College of Science
- Yanbian University
- Yanji
- China
| | - Baojia Wu
- Department of Physics
- College of Science
- Yanbian University
- Yanji
- China
| | - Guozhao Zhang
- Department of Physics
- College of Science
- Yanbian University
- Yanji
- China
| | - Lianhua Tian
- Department of Physics
- College of Science
- Yanbian University
- Yanji
- China
| | - Guangrui Gu
- Department of Physics
- College of Science
- Yanbian University
- Yanji
- China
| | - Chunxiao Gao
- State Key Lab for Superhard Materials
- Institute of Atomic and Molecular Physics
- Jilin University
- Changchun
- China
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Zhang X, Zhang J, Ke F, Li G, Ma Y, Liu X, Liu C, Han Y, Ma Y, Gao C. Anomalous semiconducting behavior on VO2 under high pressure. RSC Adv 2015. [DOI: 10.1039/c5ra07732j] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The phase transition around 10.4 GPa is evidenced as a semiconductor-to-semiconductor transformation, and the abrupt increase of activation energy at 10.4 GPa indicates the increasingly insulating behavior of VO2 during the phase transition.
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Affiliation(s)
- Xin Zhang
- State Key Lab of Superhard Materials
- Institute of Atomic and Molecular
- Jilin University
- Changchun 130012
- China
| | - Junkai Zhang
- Center for High Pressure Science and Technology Advanced Research
- Shanghai 201203
- China
| | - Feng Ke
- Center for High Pressure Science and Technology Advanced Research
- Shanghai 201203
- China
| | - Guanghui Li
- State Key Lab of Superhard Materials
- Institute of Atomic and Molecular
- Jilin University
- Changchun 130012
- China
| | - Yanmei Ma
- State Key Lab of Superhard Materials
- Institute of Atomic and Molecular
- Jilin University
- Changchun 130012
- China
| | - Xizhe Liu
- State Key Lab of Superhard Materials
- Institute of Atomic and Molecular
- Jilin University
- Changchun 130012
- China
| | - Cailong Liu
- State Key Lab of Superhard Materials
- Institute of Atomic and Molecular
- Jilin University
- Changchun 130012
- China
| | - Yonghao Han
- State Key Lab of Superhard Materials
- Institute of Atomic and Molecular
- Jilin University
- Changchun 130012
- China
| | - Yanzhang Ma
- Department of Mechanical Engineering
- Texas Tech University
- Lubbock
- USA
| | - Chunxiao Gao
- State Key Lab of Superhard Materials
- Institute of Atomic and Molecular
- Jilin University
- Changchun 130012
- China
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