A New Patterning Method Using Photocatalytic Lithography and Selective Atomic Layer Deposition

Real-Time Cell Temperature Fluctuation Monitoring System Using Precision Pt Sensors Coated with Low Thermal Capacity, Low Thermal Resistance, and Self-Assembled Multilayer Films

Real-time monitoring of cell temperature fluctuation can help researchers better understand physiological phenomena and the effects of drug treatment on cells, which is a novel and important tool for cellular informatics. The platinum (Pt) temperature sensor is widely used in temperature measurement with the advantages of strong stability, great accuracy, and high sensitivity. However, the commercially available Pt sensors have large thermal resistance and heat capacity which are difficult to be applied for cell temperature measurement because only a very small amount of heat flux is generated by live cells. In this study, we designed a system using precision Pt thin-film temperature sensors with low heat capacity and thermal resistance. The Pt thin-film sensors are covered by a silicon nitride insulation layer grafted with a self-assembled multilayer silane film for promoting cell adhesion. The temperature coefficient of resistance of the Pt temperature sensor was about 2100 ppm/°C. The four-wire lead design next to the sensor detection area ensured maximum accuracy, resulting in a system noise below 0.01 °C over a long time. HEK-293T and HeLa cells were cultured on the sensor surface, respectively. The temperature fluctuation of 293T cells was monitored in a cell culture medium, showing a temperature increase of about 0.05-0.12 °C. The temperature fluctuation of HeLa cells treated with cisplatin was also measured and recorded, indicating a temperature decrease of 0.01 °C first and then a gradual temperature increase of 0.04 °C. The Pt sensor system we developed demonstrated high sensitivity and long stability for cell temperature fluctuation monitoring, which can be widely used in cell activity and cellular informatics studies.

Selective growth of platinum nanolines by helium ion beam induced deposition and atomic layer deposition

Helium ion beam induced deposition (HIBID) is an attractive technique capable of precise fabrication of nanostructures. However, the damage caused by helium ion irradiation is the major drawback of conventional HIBID. In this study, area-selective atomic layer deposition (ALD) accompanied with the HIBID technique is explored to solve this problem. A platinum (Pt) seed layer was prepared by HIBID with a helium dose much lower than that of the conventional HIBID to reduce the damage due to the bombardment of energetic ions. Afterwards, Pt was selectively deposited on the seed layer to achieve area-selective ALD. Accordingly, the Pt nanolines with a feature size of ~15 nm are accomplished by the area-selective ALD and the HIBID technique under the condition of the damage-free does.

Photocatalytic Lithography

Patterning, the controlled formation of ordered surface features with different physico-chemical properties, is a cornerstone of contemporary micro- and nanofabrication. In this context, lithographic approaches owe their wide success to their versatility and their relative ease of implementation and scalability. Conventional photolithographic methods require several steps and the use of polymeric photoresists for the development of the desired pattern, all factors which can be deleterious, especially for sensitive substrates. Efficient patterning of surfaces, with resolution down to the nanometer scale, can be achieved by means of photocatalytic lithography. This approach is based on the use of photocatalysts to achieve the selective chemical modification or degradation of self-assembled monolayers, polymers, and metals. A wide range of photoactive compounds, from semiconducting oxides to porphyrins, have been demonstrated to be suitable photocatalysts. The goal of the present review is to provide a comprehensive state-of-the-art photocatalytic lithography, ranging from approaches based on semiconducting oxides to singlet oxygen-based lithography. Special attention will be dedicated to the results obtained for the patterning of polymer brushes, the sculpturing of metal nanoparticle arrays, and the patterning of graphene-based structures.

From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.

Spontaneous Registration of Sub-10 nm Features Based on Subzero Celsius Spin-Casting of Self-Assembling Building Blocks Directed by Chemically Encoded Surfaces

For low-cost and facile fabrication of innovative nanoscale devices with outstanding functionality and performance, it is critical to develop more practical patterning solutions that are applicable to a wide range of materials and feature sizes while minimizing detrimental effects by processing conditions. In this study, we report that area-selective sub-10 nm pattern formation can be realized by temperature-controlled spin-casting of block copolymers (BCPs) combined with submicron-scale-patterned chemical surfaces. Compared to conventional room-temperature spin-casting, the low temperature ( e.g., -5 °C) casting of the BCP solution on the patterned self-assembled monolayer achieved substantially improved area selectivity and uniformity, which can be explained by optimized solvent evaporation kinetics during the last stage of film formation. Moreover, the application of cold spin-casting can also provide high-yield in situ patterning of light-emitting CdSe/ZnS quantum dot thin films, indicating that this temperature-optimized spin-casting strategy would be highly effective for tailored patterning of diverse organic and hybrid materials in solution phase.

Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO2 substratum

Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO₂ substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO₂ and clarify the impact of the set-point temperature. An initial incubation period with actually no growth was revealed before a formation of minor, isolated RuO _x islands; clearly no continuous Ru layer formed on SiO₂. A lower temperature was beneficial in facilitating a longer incubation and consequently a wider window for (inherent) selectivity. In a second step, we write C-rich Pt micro-patterns on SiO₂ by focused electron-beam-induced deposition (FEBID), varying the number of FEBID scans at two electron beam acceleration voltages. Subsequently, the localized Pt(C) deposits are pre-cleaned in O₂ and overgrown by Ru ALD. Already sub-nanometer-thin Pt(C) patterns, which were supposedly purified into some form of Pt(O _x ), acted as very effective activation for the locally restricted, thus area-selective ALD growth of a pure, continuous Ru covering, whereas the SiO₂ substratum sufficiently inhibited towards no growth. FEBID at lower electron energy reduced unwanted stray deposition and achieved well-resolved pattern features. We access the nucleation phenomena by utilizing a hybrid metrology approach, which uniquely combines in-situ real-time spectroscopic ellipsometry, in-vacuo x-ray photoelectron spectroscopy, ex-situ high-resolution scanning electron microscopy, and mapping energy-dispersive x-ray spectroscopy.

Nanoscale Surface Modifications of Orthopaedic Implants: State of the Art and Perspectives

Background:

Orthopaedic implants such as the total hip or total knee replacement are examples of surgical interventions with postoperative success rates of over 90% at 10 years. Implant failure is associated with wear particles and pain that requires surgical revision. Improving the implant - bone surface interface is a key area for biomaterial research for future clinical applications. Current implants utilise mechanical, chemical or physical methods for surface modification.

Methods:

A review of all literature concerning the nanoscale surface modification of orthopaedic implant technology was conducted.

Results:

The techniques and fabrication methods of nanoscale surface modifications are discussed in detail, including benefits and potential pitfalls. Future directions for nanoscale surface technology are explored.

Conclusion:

Future understanding of the role of mechanical cues and protein adsorption will enable greater flexibility in surface control. The aim of this review is to investigate and summarise the current concepts and future directions for controlling the implant nanosurface to improve interactions.

Photopatterned Polydiacetylene Images Using a DNA Bio-Photomask

We describe a novel strategy to fabricate a well-defined polydiacetylene (PDA) supramolecular pattern on polyvinylidene fluoride (PVDF) membrane utilizing a DNA bio-photomask. By focusing on that, the absorption spectrum of DNA molecules having a λmax at 260 nm overlaps with the wavelength at which the photopolymerization of the diacetylene monomer occurs, DNA molecules are used to define specific patterns on PVDF membranes coated with diacetylene lipids by shielding the applied 254 nm UV light and consequently preventing the photopolymerization of the lipids. As a result, the DNA-covered regions retain the original white color on the membrane while the regions uncovered by DNA molecules undergo the color change to blue through the photopolymerization by 254 nm UV irradiation. On the basis of the selective illumination through a DNA photomask, we precisely manufacture specific patterns using a microarray spotting method and also demonstrate the capability of this strategy to achieve a novel colorimetric DNA sensor without any complicated process.

A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation

Area-selective atomic layer deposition (AS-ALD) is attracting increasing interest because of its ability to enable both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. Here we report a strategy for depositing material onto three-dimensional (3D) nanostructures with topographic selectivity using an ALD process with the aid of an ultrathin hydrophobic surface layer. Using ion implantation of fluorocarbons (CFx), a hydrophobic interfacial layer is formed, which in turn causes significant retardation of nucleation during ALD. We demonstrate the process for Pt ALD on both blanket and 2D patterned substrates. We extend the process to 3D structures, demonstrating that this method can achieve selective anisotropic deposition, selectively inhibiting Pt deposition on deactivated horizontal regions while ensuring that only vertical surfaces are decorated during ALD. The efficacy of the approach for metal oxide ALD also shows promise, though further optimization of the implantation conditions is required. The present work advances practical applications that require area-selective coating of surfaces in a variety of 3D nanostructures according to their topographical orientation.

Fluorescence imaging technology (FI) for high-throughput screening of selenide-modified nano-TiO2 catalysts

A high-throughput screening (HTS) method based on fluorescence imaging (FI) was implemented to evaluate the catalytic performance of selenide-modified nano-TiO2. Chemical ink-jet printing (IJP) technology was reformed to fabricate a catalyst library comprising 1405 (Ni(a)Cu(b)Cd(c)Ce(d)In(e)Y(f))Se(x)/TiO2 (M6Se/Ti) composite photocatalysts. Nineteen M6Se/Tis were screened out from the 1405 candidates efficiently.

Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers

Self aligned nano patterning of TiO₂ using area selective atomic area deposition.

The use of atomic layer deposition in advanced nanopatterning

Atomic layer deposition (ALD) is a method that allows for the deposition of thin films with atomic level control of the thickness and an excellent conformality on 3-dimensional surfaces. In recent years, ALD has been implemented in many applications in microelectronics, for which often a patterned film instead of full area coverage is required. This article reviews several approaches for the patterning of ALD-grown films. In addition to conventional methods relying on etching, there has been much interest in nanopatterning by area-selective ALD. Area-selective approaches can eliminate compatibility issues associated with the use of etchants, lift-off chemicals, or resist films. Moreover, the use of ALD as an enabling technology in advanced nanopatterning methods such as spacer defined double patterning or block copolymer lithography is discussed, as well as the application of selective ALD in self-aligned fabrication schemes.

Application of three-dimensionally area-selective atomic layer deposition for selectively coating the vertical surfaces of standing nanopillars

We describe a strategy for selectively coating the vertical surfaces of standing nanopillars using area-selective atomic layer deposition (ALD). Hydrophobic self-assembled monolayers (SAMs) are utilised to selectively inhibit the coating of oxides on the modified horizontal regions to ensure that only the vertical surfaces of vertical standing nanorods are coated using ALD processes. This method makes it possible to fabricate vertical nanodevices using a simple process of depositing oxide layer on a vertical surface, and can also be applied to the area-selective surface passivation of other standing structures.

Toward three-dimensional microelectronic systems: directed self-assembly of silicon microcubes via DNA surface functionalization

The huge and intelligent processing power of three-dimensional (3D) biological "processors" like the human brain with clock speeds of only 0.1 kHz is an extremely fascinating property, which is based on a massively parallel interconnect strategy. Artificial silicon microprocessors are 7 orders of magnitude faster. Nevertheless, they do not show any indication of intelligent processing power, mostly due to their very limited interconnectivity. Massively parallel interconnectivity can only be realized in three dimensions. Three-dimensional artificial processors would therefore be at the root of fabricating artificially intelligent systems. A first step in this direction would be the self-assembly of silicon based building blocks into 3D structures. We report on the self-assembly of such building blocks by molecular recognition, and on the electrical characterization of the formed assemblies. First, planar silicon substrates were functionalized with self-assembling monolayers of 3-aminopropyltrimethoxysilane for coupling of oligonucleotides (single stranded DNA) with glutaric aldehyde. The oligonucleotide immobilization was confirmed and quantified by hybridization with fluorescence-labeled complementary oligonucleotides. After the individual processing steps, the samples were analyzed by contact angle measurements, ellipsometry, atomic force microscopy, and fluorescence microscopy. Patterned DNA-functionalized layers were fabricated by microcontact printing (μCP) and photolithography. Silicon microcubes of 3 μm edge length as model objects for first 3D self-assembly experiments were fabricated out of silicon-on-insulator (SOI) wafers by a combination of reactive ion etching (RIE) and selective wet etching. The microcubes were then surface-functionalized using the same protocol as on planar substrates, and their self-assembly was demonstrated both on patterned silicon surfaces (88% correctly placed cubes), and to cube aggregates by complementary DNA functionalization and hybridization. The yield of formed aggregates was found to be about 44%, with a relative fraction of dimers of some 30%. Finally, the electrical properties of the formed dimers were characterized using probe tips inside a scanning electron microscope.

Self-assembled monolayers and titanium dioxide: From surface patterning to potential applications

The ability to control the properties of self-assembled monolayers (SAMs) attached to solid surfaces and the rare photocatalytic properties of titanium dioxide provide a rationale for the study of systems comprising both. Such systems can be realized in the form of SAMs grown on TiO(2) or, in a complementary manner, as TiO(2) grown on SAMs. Accordingly, the current status of knowledge regarding SAMs on TiO(2) is described. Photocatalytic phenomena that are of specific relevance to SAMs, such as remote degradation, and cases where SAMs were used to study photocatalytic phenomena, are discussed as well. Mastering of micro-patterning is a key issue en route to a successful assimilation of a variety of titanium dioxide based devices. Accordingly, particular attention is given to the description of a variety of methods and techniques aimed at utilizing the photocatalytic properties of titanium dioxide for patterning. Reports on a variety of applications are discussed. These examples, representing the areas of photovoltaics, microelectronics, microelectromechanics, photocatalysis, corrosion prevention and even biomedicine should be regarded as appetizers paving the way for further studies to be performed.

Area Selective Atomic Layer Deposition by Soft Lithography

Area selective HfO2 thin film growth through atomic layer deposition (ALD) has been achieved on octadecyltrichlorosilane (ODTS) patterned Si substrates. Patterned hydrophobic self-assembled monolayers (SAMs) were first transferred to Si substrates by micro-contact printing. Using hafnium-tetrachloride or tetrakis(dimethylamido) hafnium(IV) and water as ALD precursors, amorphous HfO2 layers were then grown selectively on the SAM-free regions of the surface where native hydroxyl groups nucleate growth from the vapor phase. The HfO2 pattern was readily observed through scanning electron microscopy and scanning Auger imaging, demonstrating that soft lithography is a simple and promising method to achieve area selective ALD. To evaluate the selectivity, the resolution of the soft lithography based method was compared with that of area selective ALD of HfO2 by selective surface modification of patterned silicon oxide obtained using long-time SAM exposure. It was found that the selective surface modification showed much higher spatial resolution and selectivity, an observation consistent with previous studies indicating that highly ordered and densely packed ODTS films were important to achieve complete deactivation.

Fabrication and photoelectrochemical characteristics of the patterned CdS microarrays on indium tin oxide substrates

In an effort to investigate the extraordinary photoelectrochemical characteristics of nanostructured CdS thin films in promising photovoltaic device applications, the patterned CdS microarrays with different feature sizes (50, 130, and 250 μm in diameter) were successfully fabricated on indium tin oxide (ITO) glass substrates using the chemical bath deposition method. The ultraviolet lithography process was employed for fabricating patterned octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) as the functional organic thin layer template. The results show that the regular and compact patterned CdS microarrays had been deposited onto ITO glass surfaces, with clear edges demarcating the boundaries between the patterned CdS region and substrate under an optimal depositing condition. The microarrays consisted of pure nanocrystalline CdS with average crystallite size of about 10.7 nm. The photocurrent response and the optical adsorption of the patterned CdS microarray thin films increased with the decrease of the feature size, which was due to the increased CdS surface area, as well as the increased optical path length within the patterned CdS thin films, resulting from multiple reflection of incident light. The resistivity values increase with the increase of feature size, due to the increase of the relative amount of gaps between CdS microarrays with increasing the feature size of patterned CdS microarrays.

Area-selective atomic layer deposition of lead sulfide: nanoscale patterning and DFT simulations

Area-selective atomic layer deposition (ALD) of lead sulfide (PbS) was achieved on octadecyltrichlorosilane (ODTS)-patterned silicon substrates. We investigated the capability of ODTS self-assembled monolayers (SAMs) to deactivate the ALD PbS surface reactions as a function of dipping time in ODTS solution. The reaction mechanism was investigated using density functional theory (DFT), which showed that the initial ALD half-reaction is energetically unfavorable on a methyl-terminated SAM surface. Conventional photolithography was used to create oxide patterns on which ODTS SAMs were selectively grown. Consequently, PbS thin films were grown selectively only where ODTS was not present, whereas deposition was blocked in regions where ODTS was grown. The resulting fabricated patterns were characterized by scanning electron microscopy and Auger electron spectroscopy, which demonstrated that ALD PbS was well confined to defined patterns with high selectivity by ODTS SAMs. In addition, AFM lithography was employed to create nanoscale PbS patterns. Our results show that this method can be applied to various device-fabrication processes, presenting new opportunities for various nanofabrication schemes and manifesting the benefits of self-assembly.

Ag nanoparticle sheet as a marker of lateral remote photocatalytic reactions

The lateral remote photocatalytic activity of TiO(2) nanotubes fabricated by anodic oxidation, was characterized by use of a 'silver nanosheet' as a marker. The silver nanosheet is a two-dimensional crystalline film composed of myristate-capped silver nanoparticles (d = 5 nm), which has a sharp localized plasmon absorption band at lambda(max) = 470 nm. A quartz substrate was coated with TiO(2) nanotubes to a coverage of 10% and then covered with a silver nanosheet. Upon UV irradiation a rapid decrease in the intensity of the 470 nm plasmon band and an increase in the long-wavelength absorption (550-1000 nm) band were clearly confirmed, indicating fusion of the nanoparticles due to decomposition of the myristate capping agent. Surface morphology measured by high-resolution scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealed the decomposition and fusion of silver nanoparticles even in regions of the surface a micron away from the TiO(2) nanotubes.

Fabrication of TiO2 arrays using solvent-assisted soft lithography

We present a simple solvent-assisted soft lithography method to fabricate titania (TiO(2)) patterns. The dimensions of the TiO(2) features can be controlled by adjusting the concentration of the solution, the solvent evaporation duration, and temperature. This method may provide a facile route for fabricating large area patterns of metal oxide.

TiO2-catalyzed photodegradation of porphyrins: mechanistic studies and application in monolayer photolithography

Patterned mixed monolayers of porphyrins on nanocrystalline TiO(2) films were fabricated by substrate-catalyzed monolayer photolithography. Tin(IV) protoporphyrin IX (SnPP), zinc(II) protoporphyrin IX (ZnPP), and iron(III) meso-tetra(4-carboxyphenyl)porphine (FeTCP) were adsorbed to TiO(2) through the carboxyl groups, yielding saturation surface amounts per projected area of approximately 10(-7) mol/cm(2). Illumination of SnPP- and ZnPP-functionalized TiO(2) films with 355 nm light caused the desorption of the porphyrins, most likely through oxidative decarboxylation. SnPP was removed more rapidly than ZnPP. The faster kinetics was due, in part, to the contribution of other photochemical pathways including TiO(2)-catalyzed photoreduction and direct photodegradation reactions. Patterned binary monolayers were prepared by the photoinduced desorption of a protoporphyrin, followed by the adsorption of FeTCP to previously illuminated regions of the surface.

Porphyrin-based photocatalytic nanolithography: a new fabrication tool for protein arrays

Nanoarray fabrication is a multidisciplinary endeavor encompassing materials science, chemical engineering, and biology. We formed nanoarrays via a new technique, porphyrin-based photocatalytic nanolithography. The nanoarrays, with controlled features as small as 200 nm, exhibited regularly ordered patterns and may be appropriate for (a) rapid and parallel proteomics screening of immobilized biomolecules, (b) protein-protein interactions, and/or (c) biophysical and molecular biology studies involving spatially dictated ligand placement. We demonstrated protein immobilization utilizing nanoarrays fabricated via photocatalytic nanolithography on silicon substrates where the immobilized proteins are surrounded by a non-fouling polymer background.

Phototocatalytic lithography of poly(propylene sulfide) block copolymers: toward high-throughput nanolithography for biomolecular arraying applications

Photocatalytic lithography (PCL) is an inexpensive, fast, and robust method of oxidizing surface chemical moieties to produce patterned substrates. This technique has utility in basic biological research as well as various biochip applications. We report on porphyrin-based PCL for patterning poly(propylene sulfide) block copolymer films on gold substrates on the micrometer and submicrometer scales. We confirm chemical patterning with imaging ToF-SIMS and low-voltage SEM. Biomolecular patterning on micrometer and submicrometer scales is demonstrated with proteins, protein-linked beads. and fluorescently labeled proteins.

Surface design for precise control of spatial growth of a mesostructured inorganic/organic film on a large-scale area

A microfabrication technique is presented to fabricate a mesostructured inorganic/organic composite film, i.e., silica/cetyltrimethylammonium chloride (CTAC) film, with near-perfect site-selectivity on a large surface area based on a spatially regulated growth method. To precisely regulate the site-selective growth of this mesocomposite film at the solid/liquid interface, we designed a novel microtemplate consisting of a "dual-component" self-assembled monolayer (SAM) with alternating hydrophobic trifluorocarbon (CF3) and cationic amino (NH2) groups. First, (heptadecafluoro-1,1,2,2-tetrahydrodecyl)trimethoxysilane (FAS)-SAM was formed onto Si substrate covered with native oxide (SiO2/Si) from vapor phase. The substrate was then photolithographically micropatterned using 172 nm vacuum UV light. Finally, the micropatterned FAS-SAM was immersed in a solution of 1 vol % (aminoethylaminomethyl)phenethyltrimethoxysilane (AEAMPS) in absolute toluene. Due to these treatments, a dual-SAM microtemplate with CF3- and NH2-terminated surfaces was fabricated, as evidenced by lateral force microscopy, ellipsometry, and X-ray photoelectron spectroscopy. Using this template, the microfabrication of a mesocomposite film was demonstrated. As a control, the micropatterned hydrophobic FAS-SAM template (composed of CF3- and OH-terminated surfaces) was also treated under the same conditions. Optical microscopy and atomic force microscopy confirmed that the formation of the continuous mesocomposite film proceeded only on the FAS-SAM-covered regions, while the AEAMPS-SAM-covered regions remained free of deposits. This shielding effect also remained constant regardless of the pattern's geometry, i.e., the interval distance between the FAS-SAM-covered areas in the pattern. Through this approach, we were able to obtain well-defined 5-, 10-, and 20-mum wide mesocomposite microlines over the entire 10 x 10 mm2 area with high area-selectivity. On the other hand, when the SiO2 regions were not terminated with the cationic NH2 groups, cluster formation proceeded not only on the hydrophobic CF3 regions but also on the SiO2 regions, particularly with an increase in the pattern interval distance, resulting in lower final pattern resolution.

Bismuth Sulfide Thin Films with Low Resistivity on Self-Assembled Monolayers

Using self-assembled monolayers (SAMs), highly crystalline bismuth sulfide thin films with low electrical resistivity have been prepared from aqueous solution at low temperature (40-70 degrees C). The nucleation and growth process of Bi2S3 thin films was investigated in detail by XPS, AES, SEM, XRD, SAED, and HRTEM. Solution conditions have marked effects on the microstructure, growth rate, and mechanism of Bi2S3 films. Increased solution temperature resulted in a higher growth rate and a shorter induction time due to a higher supersaturation degree. In the solution of pH 1.12, homogeneous nucleation and the attachment process dominated the formation of Bi2S3 films. In contrast, at pH 0.47 Bi2S3 thin films were formed via heterogeneous nucleation and growth. The c-axial orientation of bismuthinite films was enhanced with the increase of reaction time. By controlling the solution supersaturation and reaction duration, highly crystalline Bi2S3 films composed of closely packed and coalescent crystallites could be realized, whose dark electrical resistivity could reach as low as 0.014 Omega cm without any post-treatment.

Light Stamping Lithography: Microcontact Printing without Inks

We report a new patterning method, called light-stamping lithography (LSL), that uses UV-induced adhesion of poly(dimethylsiloxane) (PDMS). LSL is based on the direct transfer of the contact surface of the PDMS stamp to a substrate via a UV (254 nm)-induced surface bonding between the stamp and the substrate. This procedure can be adopted in automated printing machines that generate patterns with a wide range of feature sizes on diverse substrates. To demonstrate its usefulness, the LSL method was applied to prepare several PDMS patterns on a variety of substrates. The PDMS patterns were then used as templates for selective deposition of TiO2 thin film using atomic layer deposition as well as resists for selective wet etching.

Engineering Silicon Oxide Surfaces Using Self-Assembled Monolayers

Although a molecular monolayer is only a few nanometers thick it can completely change the properties of a surface. Molecular monolayers can be readily prepared using the Langmuir-Blodgett methodology or by chemisorption on metal and oxide surfaces. This Review focuses on the use of chemisorbed self-assembled monolayers (SAMs) as a platform for the functionalization of silicon oxide surfaces. The controlled organization of molecules and molecular assemblies on silicon oxide will have a prominent place in "bottom-up" nanofabrication, which could revolutionize fields such as nanoelectronics and biotechnology in the near future. In recent years, self-assembled monolayers on silicon oxide have reached a high level of sophistication and have been combined with various lithographic patterning methods to develop new nanofabrication protocols and biological arrays. Nanoscale control over surface properties is of paramount importance to advance from 2D patterning to 3D fabrication.

Photoinduced Deprotection and ZnO Patterning of Hydroxyl-Terminated Siloxane-Based Monolayers

Trimethoxy-[11-(2-nitrobenzyloxy)undecyl]silane (1) and trimethoxy-[17-(2-nitrobenzyloxy)heptadecyl]silane (2) have been used for the covalent assembly of siloxane-based photopatternable monolayers. Exposing the monolayers to UV light (312 +/- 10 nm) results in the generation of reactive hydroxyl-terminated monolayers without affecting the film quality. The new monolayers, deprotection chemistry, and the effect of photoinduced headgroup lift-off on the monolayer microstructure have been studied in detail by a full complement of physicochemical techniques, including optical (UV-vis) spectroscopy, ellipsometry, aqueous contact angle (CA) measurements, X-ray photoelectron spectroscopy (XPS), synchrotron X-ray reflectivity (XRR), and atomic force microscopy (AFM and AFM-force spectroscopy). AFM-force spectroscopy was used to analyze hydrogen-bond interactions as a function of the nature of the solid-liquid interface. AFM-force spectroscopy indicates a hydrogen-bond energy for photodeprotected monolayers of 8.2 kJ mol(-1) (approximately 2 kcal mol(-1)). Scanning electron microscopy (SEM) revealed that treatment of photopatterned monolayers with ZnEt2 solutions resulted in well-defined approximately 2 microm x 2 microm features of 10 A thick ZnO layers.