Transverse Pressure Induced Phase Transitions in Boron Nitride Nanotube Bundles and the Lightest Boron Nitride Crystal

The role of sp2 and sp3 hybridized bonds on the structural, mechanical, and electronic properties in a hard BN framework

A first-principles approach is used to systematically investigate the role of sp² and sp³ hybridized bonds on the structural, mechanical, and electronic properties in a new BN phase (denoted Hex-(BN)₁₂). Hex-(BN)₁₂ has the same number of sp² and sp³ hybridized atoms. The calculated cohesion energy, phonon frequencies, and elastic constants unambiguously confirm the structural stability of this compound. Due to the different types of hybridization and B–N covalent bonds with ionic characteristics, Hex-(BN)₁₂ has unequal bond lengths and bond angles in these hybrid orbitals. These cause the relative energetic stability to be slightly lower than c-BN and w-BN. The hardness of Hex-(BN)₁₂ is estimated to range from 33 to 40 GPa. The bond-breaking order under stress is sp³–sp³, sp²–sp³, and sp²–sp². DFT calculations with the gradient approximation (GGA) and HSE06 functional indicate the electronic structure contains an indirect band gap at 3.21 and 4.42 eV, respectively. The electronic states in the region near the Fermi level primarily arise from the 2p orbitals in sp²-hybridized atoms. In general, sp³ bonded B and N atoms guarantee higher mechanical properties, and sp² bonded atoms ensure ductility and even conductivity, although all changes vary with spatial structure. Hex-(BN)₁₂ can be obtained from multilayer yne-BN, and BN nanosheets, nanotubes and nanoribbons under pressure.

A first-principles approach is used to systematically investigate the role of sp² and sp³ hybridized bonds on the structural, mechanical, and electronic properties in a new BN phase (denoted Hex-(BN)₁₂).

Porous Boron Nitride with Tunable Pore Size

On the basis of a global structural search and first-principles calculations, we predict two types of porous boron-nitride (BN) networks that can be built up with zigzag BN nanoribbons (BNNRs). The BNNRs are either directly connected with puckered B (N) atoms at the edge (type I) or connected with sp(3)-bonded BN chains (type II). Besides mechanical stability, these materials are predicted to be thermally stable at 1000 K. The porous BN materials entail large surface areas, ranging from 2800 to 4800 m(2)/g. In particular, type-II BN material with relatively large pores is highly favorable for hydrogen storage because the computed hydrogen adsorption energy (-0.18 eV) is very close to the optimal adsorption energy (-0.15 eV) suggested for reversible hydrogen storage at room temperature. Moreover, the type-II materials are semiconductors with width-dependent direct bandgaps, rendering the type-II BN materials promising not only for hydrogen storage but also for optoelectronic and photonic applications.

Syntheses, structures and photocatalytic properties of five new praseodymium–antimony oxochlorides: from discrete clusters to 3D inorganic–organic hybrid racemic compounds

Presented here are five Pr–Sb–O–Cl cluster-based compounds with structures from discrete organic-decorated cluster to 3D framework that exhibit photocatalytic H₂-evolution activity and magnetic properties.

Structure and stability under pressure of cubic and hexagonal diamond crystals of C, BN and Si from first principles

Application has been made of first-principles total-energy band-structure theory to find the equilibrium states under constant pressure of the super-hard cubic diamond (cd) and hexagonal diamond (hd) structures of carbon (C), boron nitride (BN) and medium-hard silicon (Si). The absolute stability of the equilibrium state is found by determinations of the breakdown under pressure of several deformations of lattice parameters around the equilibrium state. The calculations show that the hd structures are much stronger than the cd structures. Thus the γ angle of the hd structure of both C and BN is stable for pressures greater than 20 Mbar while the γ angle of the cd structures breaks down at 13 and 11 Mbar respectively. Also the bulk moduli B of the hd structure of C and BN are substantially greater than the B values of the cd structure above 2 Mbar; the B values of hd structures of C and BN are 20% greater than cd structures at p = 20 Mbar. However the cd structures have greater stability relative to the hd structures as shown by a lower Gibbs free energy at pressures up to 20 Mbar. Comparison is made with the pressure dependences of the medium-hard crystals of Si in the same structures, which show notably different behavior.